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元器件品牌
IRF530
[SAMSUNG]
N-CHANNEL POWER MOSFETS; N沟道功率MOSFET
元器件型号：
IRF530
生产厂家：
SAMSUNG SEMICONDUCTOR
描述和应用：
N-CHANNEL POWER MOSFETS
N沟道功率MOSFET
晶体 晶体管 功率场效应晶体管 局域网
PDF文件：
总6页 (文件大小：358K)
下载文档：
下载PDF数据表文档文件
型号参数：IRF530参数
查看货源
IRF530/D
N-Channel Enhancement-Mode Silicon Gate
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156
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101
ETC
IRF53016
14A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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0
MOTOROLA
IRF5305
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
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2719
IRF
IRF5305
HEXFET® Power MOSFET
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156
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66
SHENZHENFREES
IRF5305
Advanced Process Technology
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156
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84
KERSEMI
IRF5305L
HEXFET® Power MOSFET
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40
SHENZHENFREES
IRF5305L
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
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293
IRF
IRF5305LPBF
Advanced Process Technology
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156
-
16
KERSEMI
IRF5305LPBF
HEXFET Power MOSFET
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156
-
144
IRF
IRF5305PBF
HEXFET Power MOSFET
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156
-
361
IRF
IRF5305S
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
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575
IRF
IRF5305S
HEXFET® Power MOSFET
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156
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80
SHENZHENFREES
IRF5305S
Advanced Process Technology
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156
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63
IRF
IRF5305SLPBF
Advanced Process Technology
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156
-
18
IRF
IRF5305SPBF
Advanced Process Technology
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156
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17
KERSEMI
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