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元器件品牌
IRF822
[SAMSUNG]
N-CHANNEL POWER MOSFETS; N沟道功率MOSFET
元器件型号：
IRF822
生产厂家：
SAMSUNG SEMICONDUCTOR
描述和应用：
N-CHANNEL POWER MOSFETS
N沟道功率MOSFET
晶体 晶体管 开关 脉冲 高压 局域网
PDF文件：
总6页 (文件大小：326K)
下载文档：
下载PDF数据表文档文件
型号参数：IRF822参数
查看货源
IRF822-004
Power Field-Effect Transistor, 2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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0
INFINEON
IRF822-005
Power Field-Effect Transistor, 2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
-
0
INFINEON
IRF822FI
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS
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156
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68
STMICROELECTR
IRF822FI
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS
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: Undefined variable $rtag in
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156
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24
STMICROELECTR
IRF822R
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2A I(D) | TO-220AB
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20
ETC
IRF823
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
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156
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27
FAIRCHILD
IRF823
N-CHANNEL Enhancement-Mode Silicon Gate TMOS
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156
-
27
MOTOROLA
IRF823
N-CHANNEL POWER MOSFETS
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156
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27
SAMSUNG
IRF823R
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2A I(D) | TO-220AB
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18
ETC
IRF823R
TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,2A I(D),TO-220AB
Warning
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156
-
0
RENESAS
IRF8252PBF
HEXFET Power MOSFET
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
-
99
IRF
IRF8252PBF-1
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
-
0
INFINEON
IRF82FI
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS
Warning
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156
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14
STMICROELECTR
IRF82FI
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS
Warning
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on line
156
-
50
STMICROELECTR
IRF830
PowerMOS transistor Avalanche energy rated
Warning
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on line
156
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792
PHILIPS
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