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IRF9130 [SAMSUNG]

P-CHANNEL POWER MOSFETS; P沟道功率MOSFET
IRF9130
元器件型号： IRF9130
生产厂家： SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述和应用：

P-CHANNEL POWER MOSFETS
P沟道功率MOSFET

晶体 晶体管 开关 脉冲 局域网
PDF文件： 总12页 (文件大小：512K)
下载文档：  下载PDF数据表文档文件
型号参数：IRF9130参数
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IRF9130_03

 P–CHANNEL POWER MOSFET

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18 SEME-LAB

IRF9130SMD

 P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

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50 SEME-LAB

IRF9130SMD05

 P-Channel

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27 ETC

IRF9130SMD05

 P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

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20 SEME-LAB

IRF9131

 P-CHANNEL POWER MOSFETS

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135 SAMSUNG

IRF9131

 Power Field-Effect Transistor, 12A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204

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1 VISHAY

IRF9131

 Transistor

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1 SAMSUNG

IRF9132

 P-CHANNEL POWER MOSFETS

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108 SAMSUNG

IRF9132

 Power Field-Effect Transistor, 10A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204

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0 VISHAY

IRF9132

 Transistor

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0 SAMSUNG

IRF9132

 10A, 100V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA

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0 ROCHESTER

IRF9133

 P-CHANNEL POWER MOSFETS

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85 SAMSUNG

IRF9140

 P-CHANNEL POWER MOSFET

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229 SEME-LAB

IRF9140

 -19A, -100V, 0.200 Ohm, P-Channel Power MOSFET

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179 INTERSIL

IRF9140

 TRANSISTORS P-CHANNEL(Vdss=-100V, Rds(on)=0.2ohm, Id=-18A)

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382 IRF
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