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元器件品牌
IRF9141
[SAMSUNG]
P-CHANNEL POWER MOSFETS; P沟道功率MOSFET
元器件型号：
IRF9141
生产厂家：
SAMSUNG SEMICONDUCTOR
描述和应用：
P-CHANNEL POWER MOSFETS
P沟道功率MOSFET
PDF文件：
总12页 (文件大小：512K)
下载文档：
下载PDF数据表文档文件
型号参数：IRF9141参数
查看货源
IRF9142
P-CHANNEL POWER MOSFETS
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34
SAMSUNG
IRF9142
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 15A I(D) | TO-204AA
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76
ETC
IRF9143
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-204AA
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52
ETC
IRF9143
P-CHANNEL POWER MOSFETS
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51
SAMSUNG
IRF9150
-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
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380
INTERSIL
IRF9151
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 25A I(D) | TO-204AA
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55
ETC
IRF9204PBF
Advanced Process Technology, Ultra Low On-Resistance
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156
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66
IRF
IRF9230
P-CHANNEL POWER MOSFETS
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156
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108
SAMSUNG
IRF9230
P-CHANNEL POWER MOSFET
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156
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202
SEME-LAB
IRF9230
-5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs
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124
INTERSIL
IRF9230
TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)
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234
IRF
IRF9230
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204
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3
VISHAY
IRF9230EBPBF
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
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1
IRF
IRF9230ECPBF
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
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156
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0
IRF
IRF9230EDPBF
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
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0
IRF
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