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IRF9533 [SAMSUNG]

P-CHANNEL POWER MOSFETS; P沟道功率MOSFET
IRF9533
元器件型号： IRF9533
生产厂家： SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述和应用：

P-CHANNEL POWER MOSFETS
P沟道功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
PDF文件： 总6页 (文件大小：382K)
下载文档：  下载PDF数据表文档文件
型号参数：IRF9533参数
 查看货源

IRF9533-006PBF

 Power Field-Effect Transistor, 10A I(D), 80V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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0 INFINEON

IRF9540

 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs

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864 INTERSIL

IRF9540

 Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

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1438 IRF

IRF9540

 Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

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4737 IRF

IRF9540

 P-CHANNEL POWER MOSFETS

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91 HARRIS

IRF9540

 P-CHANNEL POWER MOSFETS

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349 SAMSUNG

IRF9540

 Power MOSFET

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310 KERSEMI

IRF9540

 P-CHANNEL POWER MOSFETS

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235 HARRIS

IRF9540

 P-CHANNEL POWER MOSFETS

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93 SAMSUNG

IRF9540

 P-CHANNEL POWER MOSFETS

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240 SAMSUNG

IRF9540

 Power MOSFET

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446 VISHAY

IRF9540-011PBF

 Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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1 VISHAY

IRF9540N

 HEXFET® Power MOSFET

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160 SHENZHENFREES

IRF9540N

 Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

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2406 IRF

IRF9540N

 Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

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35 IRF
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