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元器件品牌
IRF9543
[SAMSUNG]
P-CHANNEL POWER MOSFETS; P沟道功率MOSFET
元器件型号：
IRF9543
生产厂家：
SAMSUNG SEMICONDUCTOR
描述和应用：
P-CHANNEL POWER MOSFETS
P沟道功率MOSFET
晶体 晶体管 功率场效应晶体管
PDF文件：
总6页 (文件大小：377K)
下载文档：
下载PDF数据表文档文件
型号参数：IRF9543参数
查看货源
IRF9543-009PBF
Power Field-Effect Transistor, 16A I(D), 80V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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0
INFINEON
IRF9543-012
Power Field-Effect Transistor, 16A I(D), 80V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
Warning
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3
INFINEON
IRF9601SPBF
Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SMD-220, D2PAK-3
Warning
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2
VISHAY
IRF9601STRLPBF
Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SMD-220, D2PAK-3
Warning
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6
VISHAY
IRF9601STRRPBF
Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SMD-220, D2PAK-3
Warning
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156
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6
VISHAY
IRF9610
Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A)
Warning
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1547
IRF
IRF9610
Power MOSFET
Warning
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156
-
511
VISHAY
IRF9610-004
Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Warning
: Undefined variable $rtag in
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156
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3
VISHAY
IRF9610-004PBF
Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Warning
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156
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3
VISHAY
IRF9610-017PBF
Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Warning
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156
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6
VISHAY
IRF9610-018PBF
Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Warning
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156
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0
VISHAY
IRF9610FPBF
Power Field-Effect Transistor, 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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12
VISHAY
IRF9610FPBF
Power Field-Effect Transistor, 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
IRF
IRF9610PBF
Power MOSFET
Warning
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on line
156
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56
VISHAY
IRF9610PBF
HEXFET POWER MOSFET ( VDSS=-200V , RDS(on)=3.0ヘ , ID=-1.8A )
Warning
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135
IRF
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