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元器件品牌
IRF9630
[SAMSUNG]
P-CHANNEL POWER MOSFETS; P沟道功率MOSFET
元器件型号：
IRF9630
生产厂家：
SAMSUNG SEMICONDUCTOR
描述和应用：
P-CHANNEL POWER MOSFETS
P沟道功率MOSFET
晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
PDF文件：
总12页 (文件大小：512K)
下载文档：
下载PDF数据表文档文件
型号参数：IRF9630参数
查看货源
IRF9630-004
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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2
VISHAY
IRF9630-004PBF
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Warning
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156
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1
VISHAY
IRF9630PBF
Power MOSFET
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156
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12
KERSEMI
IRF9630PBF
Power MOSFET
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156
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191
VISHAY
IRF9630S
Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)
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339
IRF
IRF9630S
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN
Warning
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4
VISHAY
IRF9630SPBF
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Warning
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1
IRF
IRF9630STRL
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
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0
IRF
IRF9630STRLPBF
TRANSISTOR 6.5 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power
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1
VISHAY
IRF9630STRR
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Warning
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156
-
0
VISHAY
IRF9630STRR
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Warning
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156
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0
IRF
IRF9631
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 4A I(D) | TO-220AB
Warning
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68
ETC
IRF9631
P-CHANNEL POWER MOSFETS
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156
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49
SAMSUNG
IRF9631
P-CHANNEL POWER MOSFETS
Warning
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156
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30
SAMSUNG
IRF9632
P-CHANNEL POWER MOSFETS
Warning
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156
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12
SAMSUNG
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