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IRF9632 [SAMSUNG]

P-CHANNEL POWER MOSFETS; P沟道功率MOSFET
IRF9632
元器件型号： IRF9632
生产厂家： SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述和应用：

P-CHANNEL POWER MOSFETS
P沟道功率MOSFET
PDF文件： 总12页 (文件大小：512K)
下载文档：  下载PDF数据表文档文件
型号参数：IRF9632参数
 查看货源

IRF9633

 TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 3A I(D) | TO-220AB

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27 ETC

IRF9633

 P-CHANNEL POWER MOSFETS

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42 SAMSUNG

IRF9633

 P-CHANNEL POWER MOSFETS

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17 SAMSUNG

IRF9640

 P-CHANNEL POWER MOSFETS

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361 SAMSUNG

IRF9640

 P-CHANNEL POWER MOSFETS

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545 SAMSUNG

IRF9640

 Power MOSFET

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604 VISHAY

IRF9640

 11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs

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529 INTERSIL

IRF9640

 Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A)

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2640 IRF

IRF9640-004PBF

 Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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3 VISHAY

IRF9640-005

 Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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0 VISHAY

IRF9640-006PBF

 Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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0 VISHAY

IRF9640-009PBF

 Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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1 IRF

IRF9640FPBF

 Power Field-Effect Transistor, 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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1 IRF

IRF9640L

 Power MOSFET

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41 VISHAY

IRF9640LPBF

 Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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0 VISHAY
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