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IRF9Z20 [SAMSUNG]

P-CHANNEL POWER MOSFETs; P沟道功率MOSFET
IRF9Z20
元器件型号： IRF9Z20
生产厂家： SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述和应用：

P-CHANNEL POWER MOSFETs
P沟道功率MOSFET
PDF文件： 总5页 (文件大小：291K)
下载文档：  下载PDF数据表文档文件
型号参数：IRF9Z20参数
 查看货源

IRF9Z20-005

 Power Field-Effect Transistor, 9.7A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON

IRF9Z20-005PBF

 Power Field-Effect Transistor, 9.7A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON

IRF9Z20PBF

 Power Field-Effect Transistor, 9.7A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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0 VISHAY

IRF9Z22

 P-CHANNEL 50 VOLT POWER MOSFETs

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39 IRF

IRF9Z22

 Power MOSFET

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29 VISHAY

IRF9Z22

 Power Field-Effect Transistor, 8.9A I(D), 50V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRF9Z22-005

 Power Field-Effect Transistor, 8.9A I(D), 50V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON

IRF9Z22-005PBF

 Power Field-Effect Transistor, 8.9A I(D), 50V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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0 INFINEON

IRF9Z22-013

 Power Field-Effect Transistor, 8.9A I(D), 50V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON

IRF9Z22PBF

 Power MOSFET

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18 VISHAY

IRF9Z24

 Power MOSFET

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103 VISHAY

IRF9Z24

 P-CHANNEL POWER MOSFETs

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454 SAMSUNG

IRF9Z24

 POWER MOSFET

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210 IRF

IRF9Z24

 POWER MOSFET

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200 IRF

IRF9Z24-005PBF

 Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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1 VISHAY
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