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元器件品牌
IRFP253
[SAMSUNG]
N-Channel Power Mosfets; N沟道功率MOSFET
元器件型号：
IRFP253
生产厂家：
SAMSUNG SEMICONDUCTOR
描述和应用：
N-Channel Power Mosfets
N沟道功率MOSFET
晶体 晶体管 功率场效应晶体管
PDF文件：
总7页 (文件大小：522K)
下载文档：
下载PDF数据表文档文件
型号参数：IRFP253参数
查看货源
IRFP253R
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 27A I(D) | TO-247
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14
ETC
IRFP254
Power MOSFET(Vdss = 250 V, Rds(on)=0.14ohm, Id=23A)
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155
IRF
IRFP254
High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series
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59
IXYS
IRFP254
Standard Power MOSFET - N-Channel Enhancement Mode
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322
IXYS
IRFP254
Power MOSFET
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98
VISHAY
IRFP254A
$GYDQFHG 3RZHU 026)(7
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32
IRF
IRFP254A
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 25A I(D) | TO-247VAR
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38
ETC
IRFP254B
250V N-Channel MOSFET
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50
FAIRCHILD
IRFP254B_FP001
Power Field-Effect Transistor, 25A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-3P, 3 PIN
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0
FAIRCHILD
IRFP254N
Power MOSFET(Vdss=250V, Rds(on)=125mohm, Id=23A)
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92
IRF
IRFP254N
Power MOSFET
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30
VISHAY
IRFP254NPBF
Power MOSFET
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156
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24
VISHAY
IRFP254NPBF
HEXFET㈢ Power MOSFET
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156
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24
IRF
IRFP254NPBF
Power Field-Effect Transistor, 23A I(D), 250V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
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1
VISHAY
IRFP254PBF
Power MOSFET
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27
VISHAY
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