K4R441869A-NMCK8 [SAMSUNG]

256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM; 256K X 16/18位×2 ×16相关银行直接RDRAMTM
K4R441869A-NMCK8
元器件型号: K4R441869A-NMCK8
生产厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述和应用:

256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K X 16/18位×2 ×16相关银行直接RDRAMTM

动态存储器
PDF文件: 总64页 (文件大小:4043K)
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型号参数:K4R441869A-NMCK8参数

K4R441869B

256K x 16/18 bit x 32s banks Direct RDRAMTM

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12 SAMSUNG

K4R441869B-MCG6

256K x 16/18 bit x 32s banks Direct RDRAMTM

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14 SAMSUNG

K4R441869B-MCG6

Rambus DRAM, 8MX18, 53.3ns, CMOS, PBGA62, CENTER BONDED, MICRO, CSP, BGA-62

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0 SAMSUNG

K4R441869B-MCK7

256K x 16/18 bit x 32s banks Direct RDRAMTM

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9 SAMSUNG

K4R441869B-MCK7

Rambus DRAM, 8MX18, 45ns, CMOS, PBGA62, CENTER BONDED, MICRO, CSP, BGA-62

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0 SAMSUNG

K4R441869B-MCK7T

Rambus DRAM, 8MX18, CMOS, PBGA62,

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0 SAMSUNG

K4R441869B-MCK8

256K x 16/18 bit x 32s banks Direct RDRAMTM

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28 SAMSUNG

K4R441869B-MCK8

暂无描述

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0 SAMSUNG

K4R441869B-N(M)CG6

256K x 16/18 bit x 32s banks Direct RDRAMTM

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12 SAMSUNG

K4R441869B-N(M)CK7

256K x 16/18 bit x 32s banks Direct RDRAMTM

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11 SAMSUNG

K4R441869B-N(M)CK8

256K x 16/18 bit x 32s banks Direct RDRAMTM

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20 SAMSUNG

K4R441869B-NCG6

256K x 16/18 bit x 32s banks Direct RDRAMTM

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-
22 SAMSUNG

K4R441869B-NCG6

Rambus DRAM, 8MX18, 53.3ns, CMOS, PBGA62, CENTER BONDED, MICRO, CSP, BGA-62

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0 SAMSUNG

K4R441869B-NCG6T

Rambus DRAM, 8MX18, CMOS, PBGA62,

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0 SAMSUNG

K4R441869B-NCG6T

Rambus DRAM, 8MX18, CMOS, PBGA62,

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0 SAMSUNG