MR18R1624EG0-CM8 [SAMSUNG]

Key Timing Parameters; 关键时序参数
MR18R1624EG0-CM8
元器件型号: MR18R1624EG0-CM8
生产厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述和应用:

Key Timing Parameters
关键时序参数

存储 内存集成电路 动态存储器 时钟
PDF文件: 总16页 (文件大小:443K)
下载文档:  下载PDF数据表文档文件
型号参数:MR18R1624EG0-CM8参数

MR18R1624EG0-CT9

Key Timing Parameters

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17 SAMSUNG

MR18R1624EG0-CT9

Key Timing Parameters

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23 SAMSUNG

MR18R1624GEG0

Key Timing Parameters

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4 SAMSUNG

MR18R1624GEG0

Key Timing Parameters

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26 SAMSUNG

MR18R1624MN1-CK7

Rambus DRAM Module, 64MX18, 45ns, CMOS, RIMM-184

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0 SAMSUNG

MR18R1626MN1-CG6

Rambus DRAM Module, 96MX18, CMOS, RIMM-184

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0 SAMSUNG

MR18R1626MN1-CK7

Rambus DRAM Module, 96MX18, CMOS, RIMM-184

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0 SAMSUNG

MR18R1628AF0-CK8

(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V

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20 SAMSUNG

MR18R1628AF0-CK8

Rambus DRAM Module, 128MX18, CMOS, RIMM-184

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0 SAMSUNG

MR18R1628AF0-CM8

(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V

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27 SAMSUNG

MR18R1628AF0-CM8

Rambus DRAM Module, 128MX18, CMOS, RIMM-184

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0 SAMSUNG

MR18R1628AF1-CN9

(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V

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14 SAMSUNG

MR18R1628AF1-CN9

Rambus DRAM Module, 128MX18, CMOS, RIMM-184

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0 SAMSUNG

MR18R1628AF1-CT9

(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V

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16 SAMSUNG

MR18R1628DF0-CM8

Rambus DRAM Module, 128MX18, CMOS, RIMM-184

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0 SAMSUNG