MR18R162GAF0-CK8 [SAMSUNG]

(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V; 基于256Mb的( 16Mx16 )×2 ( 4/8/16 )个RIMM模块A -死, 32S银行, 16K / 32ms的参考, 2.5V
MR18R162GAF0-CK8
元器件型号: MR18R162GAF0-CK8
生产厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述和应用:

(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
基于256Mb的( 16Mx16 )×2 ( 4/8/16 )个RIMM模块A -死, 32S银行, 16K / 32ms的参考, 2.5V

存储 内存集成电路 动态存储器 时钟
PDF文件: 总16页 (文件大小:420K)
下载文档:  下载PDF数据表文档文件
型号参数:MR18R162GAF0-CK8参数

MR18R162GAF0-CM8

(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V

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20 SAMSUNG

MR18R162GAF0-CM8

Rambus DRAM Module, 256MX18, 40ns, CMOS, RIMM-184

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0 SAMSUNG

MR18R162GAF0-CN9

(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V

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16 SAMSUNG

MR18R162GAF0-CN9

Rambus DRAM Module, 256MX18, 32ns, CMOS, RIMM-184

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0 SAMSUNG

MR18R162GAF0-CT9

(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V

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17 SAMSUNG

MR18R162GAF0-CT9

Rambus DRAM Module, 256MX18, 32ns, CMOS, RIMM-184

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0 SAMSUNG

MR18R162GEG0-CK8

Key Timing Parameters

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21 SAMSUNG

MR18R162GEG0-CK8

Key Timing Parameters

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6 SAMSUNG

MR18R162GEG0-CM8

Key Timing Parameters

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20 SAMSUNG

MR18R162GEG0-CM8

Key Timing Parameters

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6 SAMSUNG

MR18R162GEG0-CT9

Key Timing Parameters

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6 SAMSUNG

MR18R162GEG0-CT9

Key Timing Parameters

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10 SAMSUNG

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0 SAMSUNG

MR18R162WDG0-CK8

Rambus DRAM Module, 512MX18, 45ns, CMOS, RIMM-184

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0 SAMSUNG

MR18R162WDG0-CM8

Rambus DRAM Module, 512MX18, 40ns, CMOS, RIMM-184

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0 SAMSUNG