2SC3263 [SANKEN]
Silicon NPN Epitaxial Planar Transistor(Audio and General Purpose); NPN硅外延平面型晶体管（音频和通用）
| 型号： | 2SC3263 |
| 厂家： | 
SANKEN ELECTRIC |
| 描述： | Silicon NPN Epitaxial Planar Transistor(Audio and General Purpose) |
| 文件： | 总1页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LAP T 2 S C3 2 6 3
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1294)
Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C)
■Electrical Characteristics
(Ta=25°C)
External Dimensions MT-100(TO3P)
Symbol
ICBO
2SC3263
2SC3263
Unit
Symbol
Conditions
Unit
µA
µA
V
±0.2
4.8
±0.4
15.6
±0.1
100max
100max
230min
50min
230
V
VCB=230V
2.0
VCBO
VCEO
VEBO
IC
9.6
IEBO
230
V
VEB=5V
V(BR)CEO
hFE
5
V
IC=25mA
a
±0.1
ø3.2
VCE=4V, IC=5A
IC=5A, IB=0.5A
VCE=12V, IE=–2A
VCB=10V, f=1MHz
15
4
A
b
VCE(sat)
fT
2.0max
60typ
IB
V
MHz
pF
A
PC
130(Tc=25°C)
150
W
°C
°C
2
3
COB
250typ
Tj
+0.2
-0.1
+0.2
-0.1
Tstg
hFE Rank O(50 to 100), Y(70 to 140)
–55 to +150
1.05
0.65
1.4
■Typical Switching Characteristics (Common Emitter)
±0.1
±0.1
5.45
5.45
B
C
E
Weight : Approx 6.0g
a. Type No.
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
b. Lot No.
60
12
5
10
–5
500
–500
0.30typ
2.40typ 0.50typ
–
–
–
IC VCE Characteristics (Typical)
VCE(sat) IB Characteristics (Typical)
IC VBE Temperature Characteristics (Typical)
(VCE=4V)
15
15
10
3
2
10
1
5
5
0
IC=10A
IB=20mA
5A
0
0
0
1
2
3
4
0
0.5
1.0
1.5
2.0
0
1
2
Collector-Emitter Voltage VCE(V)
Base Current IB(A)
Base-Emittor Voltage VBE(V)
–
–
–
j-a t Characteristics
hFE IC Characteristics (Typical)
hFE IC Temperature Characteristics (Typical)
θ
(VCE=4V)
(VCE=4V)
3
200
200
125˚C
100
100
50
25˚C
Typ
1
–30˚C
50
0.5
10
0.02
10
0.02
0.1
1
10
100
Time t(ms)
1000 2000
0.1
0.5
1
5
10 15
0.1
0.5
1
5
10 15
Collector Current IC(A)
Collector Current IC(A)
–
fT IE Characteristics (Typical)
Safe Operating Area (Single Pulse)
–
Pc Ta Derating
(VCE=12V)
130
100
100
80
40
10
5
Typ
60
40
20
0
1
50
0.5
Without Heatsink
Natural Cooling
Without Heatsink
3.5
0
0.1
3
–0.02
–0.1
–1
–10
10
100
300
0
25
50
75
100
125
150
Collector-Emitter Voltage VCE(V)
Ambient Temperature Ta(˚C)
Emitter Current IE(A)
63
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