MGF65A6L [SANKEN]

VCE = 650 V, IC = 60 A Trench Field Stop IGBTs with Fast Recovery Diode;
MGF65A6L
元器件型号: MGF65A6L
生产厂家: SANKEN ELECTRIC    SANKEN ELECTRIC
描述和应用:

VCE = 650 V, IC = 60 A Trench Field Stop IGBTs with Fast Recovery Diode

双极性晶体管
PDF文件: 总14页 (文件大小:675K)
下载文档:  下载PDF数据表文档文件
型号参数:MGF65A6L参数

MGF-7002A

RF/Microwave Amplifier, GAAS

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0 MITSUBISHI

MGF7004

Transistor

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0 MITSUBISHI

MGF7006

Wide Band Low Power Amplifier, 200MHz Min, 1800MHz Max,

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0 MITSUBISHI

MGF7006-01

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

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0 MITSUBISHI

MGF7051A

SPDT, 800MHz Min, 2000MHz Max, 1.5dB Insertion Loss-Max

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0 MITSUBISHI

MGF7103-01

Narrow Band Medium Power Amplifier, 824MHz Min, 849MHz Max,

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1 MITSUBISHI

MGF7104-01

Narrow Band Medium Power Amplifier, 872MHz Min, 905MHz Max,

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0 MITSUBISHI

MGF7105-01

Narrow Band Medium Power Amplifier, 890MHz Min, 915MHz Max,

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0 MITSUBISHI

MGF7108A

Narrow Band Medium Power Amplifier, 898MHz Min, 925MHz Max, GAAS,

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0 MITSUBISHI

MGF7108A

Narrow Band Medium Power Amplifier, 898MHz Min, 925MHz Max, GAAS,

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0 MITSUBISHI

MGF7113C

Narrow Band Medium Power Amplifier, 824MHz Min, 849MHz Max, GAAS,

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0 MITSUBISHI

MGF7113P

Narrow Band Medium Power Amplifier, 824MHz Min, 849MHz Max, GAAS,

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0 MITSUBISHI

MGF7113P

Narrow Band Medium Power Amplifier, 824MHz Min, 849MHz Max, GAAS,

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0 MITSUBISHI

MGF7114C

Narrow Band Medium Power Amplifier, 872MHz Min, 905MHz Max, GAAS,

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0 MITSUBISHI

MGF7114C

Narrow Band Medium Power Amplifier, 872MHz Min, 905MHz Max, GAAS,

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0 MITSUBISHI