RM10BWS [SANKEN]
Rectifier Diode, 1 Phase, 1 Element, 1.2A, Silicon,;
| 型号： | RM10BWS |
| 厂家： | 
SANKEN ELECTRIC |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 1.2A, Silicon, |
| 文件： | 总1页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Rectifier Diodes
Electrical Characteristics (Ta =25°C)
Absolute Maximum Ratings
Others
Mass
Parameter
IFSM
(A)
Tj
Tstg
VF
(V)
IR
(µA)
IR
(H)
(µA)
Rth (j-
)
(°C)
(°C)
VRM
(V)
IF (AV)
(A)
Fig.
A
50Hz
Half-cycle Sinewave
Single Shot
Type No.
VR =VRM
max
VR =VRM
IF
(A)
(°C/ W)
max
0.91
(g)
Ta
=
100°C max
200
400
600
800
200
400
600
800
1000
200
400
600
800
1000
1.5
1.2
120
RM 10Z
RM 10
RM 10A
RM 10B
RM 2Z
RM 2
RM 2A
RM 2B
RM 2C
RO 2Z
RO 2
RO 2A
RO 2B
RO 2C
–40 to +150
–40 to +150
1.5
1.5
10
50
15
12
0.4
150
1.2
1.2
100
80
0.91
0.92
10
50
50
0.6
B
–40 to +150
1.5
10
12
0.61
RM 10 series
Ta —IF(AV) Derating
VF —IF Characteristics (Typical)
IFMS Rating
5.0
150
100
50
1.5
L=15mm
L=15mm
20ms
1.2
0.9
0.6
0.3
0
Solder
180• 100 • 1.6 t
10mm
Copper Foil
P.C.B
RM10
RM10A
RM10B
1.0
0.5
RM10Z
=
T
a
130°C
100°C
25°C
RM10
RM10A
RM10B
RM10Z
0.1
0.05
0.5
0
1
5
10
50
0
25
50
75
100
125 150
0.6
0.7
0.8
0.9
1.0
1.1
Ambient Temperature Ta (°C)
Forward Voltage VF (V)
Overcurrent Cycles
RM 2 series
Ta —IF(AV) Derating
VF —IF Characteristics (Typical)
IFMS Rating
1.5
5.0
100
80
20ms
1.2
0.9
0.6
0.3
0
1.0
0.5
60
=
T
a
130°C
100°C
25°C
40
20
0.1
0.05
0.5
0
0
25
50
75
100
125 150
0.6
0.7
0.8
0.9
1.0
1.1
1
5
10
50
Ambient Temperature Ta (°C)
Forward Voltage VF (V)
Overcurrent Cycles
RO 2 series
Ta —IF(AV) Derating
VF —IF Characteristics (Typical)
IFMS Rating
80
50
10
1.5
20ms
1.2
0.9
0.6
0.3
0
60
40
20
1
0.1
=
T
a
150°C
100°C
60°C
0.01
25°C
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1
5
10
50
0
25
50
75
100
125 150
Ambient Temperature Ta (°C)
Forward Voltage VF (V)
Overcurrent Cycles
Fig.
B
External Dimensions
Fig.
A
(Unit: mm)
0.78±0.05
0.98±0.05
Flammability:
UL94V-0 or Equivalent
Cathode Mark
Cathode Mark
4.0±0.2
4.0±0.2
15
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