RM4YV [SANKEN]
Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon,;型号: | RM4YV |
厂家: | SANKEN ELECTRIC |
描述: | Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, 整流二极管 |
文件: | 总1页 (文件大小:24K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Rectifier Diodes
Electrical Characteristics (Ta = 25°C)
Absolute Maximum Ratings
Others
Mass
Parameter
IFSM
(A)
Tj
(°C)
Tstg
(°C)
VF
(V)
IR
(µA)
IR ( )
H
(µA)
Rth (j-
)
VRM
(V)
I
F (AV) (A)
Fig.
A
50Hz
Half-cycle Sinewave
Single Shot
Type No.
V = VRM
R
VR = VRM
( ) is with
Heatsink
IF
(°C/ W)
(g)
max
0.95
(A)
max
10
=
Ta 100°C max
400
600
RM 3
2.5
2.0
RM 3A
RM 3B
RM 3C
RM 4Y
RM 4Z
RM 4
RM 4A
RM 4B
RM 4C
100
(150°C)
150
200
2.5
10
1.0
800
1000
100
200
–40 to +150
0.95
400
1.7
(3.0)
3.0
3.5
10
10
50
50
8
8
1.2
1.2
600
B
800
150
350
0.97
0.92
1000
1.8
(3.2)
600
RM 4AM
RM 3 series
Ta —IF (AV) Derating
VF---I F Characteristics (Typical)
IFMS Rating
2.5
10
150
100
L= 20 mm
L= 20 mm
20ms
2.0
1.5
1.0
0.5
0
P. C. B. 1.6 t
Solder Land
5.5
1
0.1
RM3C
50
0
=
Ta 100ºC
0.01
0.001
25ºC
1
1
1
5
10
50
0
25
50
75
100
125 150
0.3
0.5
0.7
0.9
1.1
Ambient Temperature Ta (ºC)
Forward Voltage VF (V)
Overcurrent Cycles
RM 4 series
Ta —IF (AV) Derating
VF---I F Characteristics (Typical)
IFMS Rating
200
160
120
80
100
10
3.75
3.00
2.25
1.50
5 mm
5 mm
RM 4Y
RM 4Z
RM 4
RM 4A
1
RM4B
RM4C
40
0.75
0
0
0.1
0
1.0
2.0
5
10
50
0
25
50
75
100
125 150
Ambient Temperature Ta (ºC)
Forward Voltage VF (V)
Overcurrent Cycles
RM 4M series
Ta —IF (AV) Derating
VF---I F Characteristics (Typical)
IFMS Rating
100
10
1
3.5
350
300
20ms
2.8
2.1
1.4
0.7
0
5 mm
5 mm
200
100
0
0.1
=
T
a
150ºC
100ºC
25ºC
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
5
10
50
0
25
50
75
100
125 150
Ambient Temperature Ta (ºC)
Forward Voltage VF (V)
Overcurrent Cycles
External Dimensions
(Unit: mm)
Fig.
A
Fig.
B
1.2±0.05
1.4±0.1
Flammability:
UL94V-0 or Equivalent
Cathode Mark
Cathode Mark
5.2 ±0.2
6.5 ±0.2
16
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