SDC04 [SANKEN]
NPN Darlington With built-in avalanche diode; NPN达林顿凭借内置的雪崩二极管
| 型号： | SDC04 |
| 厂家： | 
SANKEN ELECTRIC |
| 描述： | NPN Darlington With built-in avalanche diode |
| 文件： | 总1页 (文件大小：24K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN Darlington
• • •
External dimensions
SD
With built-in avalanche diode
SDC04
E
Absolute maximum ratings
Electrical characteristics
(Ta=25°C)
(Ta=25°C)
Specification
typ
Symbol
Ratings
Unit
Symbol
Unit
Conditions
min
max
10
VCBO
VCEO
VEBO
IC
100±15
V
V
ICBO
IEBO
VCEO
hFE
µA
mA
V
VCB=85V
VEB=6V
100±15
1
3
6
V
85
100
5000
1.0
1.7
1.2
0.6
3.0
1.0
30
115
12000
1.3
IC=10mA
1.5
A
2000
VCE=4V, IC=1A
ICP
2.5 (PW≤1ms, Du≤10%)
A
VCE(sat)
VBE(sat)
VFEC
ton
V
V
IC=1A, IB=2mA
IB
0.1
3 (Ta=25°C)
150
A
2.2
PT
W
°C
°C
°C/W
1.8
V
IFEC=1A
VCC 30V,
Tj
µs
µs
µs
MHz
pF
Tstg
θ j–a
–40 to +150
41.6
tstg
IC=1A,
tf
IB1=–IB2=2mA
VCE=12V, IE=–0.1A
VCB=10V, f=1MHz
fT
■Equivalent circuit diagram
Cob
20
15,16
13,14
11,12
9,10
8
1
3
5
7
R1
R2
2
4
6
R1: 4kΩ typ R2: 150Ω typ
Characteristic curves
IC-VCE Characteristics (Typical)
hFE-IC Characteristics (Typical)
hFE-IC Temperature Characteristics (Typical)
(VCE=4V)
(VCE=4V)
20000
2.5
2.0
1.5
1.0
20000
I
B
=5mA
1mA
10000
5000
10000
5000
typ
1000
500
1000
500
0.5
0
100
50
100
50
0
1
2
3
4
5
6
0.03 0.05
0.1
0.5
1
2.5
0.03 0.05
0.1
0.5
1
2.5
VCE (V)
IC (A)
I
C (A)
VCE(sat)-IC Temperature Characteristics (Typical)
VCE(sat)-IB Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
(VCE=4V)
(IC / IB=1000)
3
2.5
2
2.0
1.5
1.0
0.5
0
2
IC=4A
1
IC=2A
Ta=125°C
75°C
25°C
–30°C
1
IC-1A
0
0.1
0
0.3
0.5
1
5
10
50 100
0
1
2
3
0.5
1
2.5
I
B
(mA)
V
BE (V)
I
C
(A)
θ j-a-PW Characteristics
PT-Ta Characteristics
Safe Operating Area (SOA)
50
5
3
4
1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation
3
1ms
2
1
2
10
5
0.5
1
1
0
0.1
Single Pulse
Without Heatsink
0.05
0.03
T
a=25°C
1
1
5
10
50 100
500 1000
0
50
100
150
3
5
10
50
100
PW (mS)
Ta (°C)
V
CE (V)
163
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