SELS1803C [SANKEN]
Single Color LED, Ultra High Intensity Amber, Clear, 1mm;
| 型号： | SELS1803C |
| 厂家： | 
SANKEN ELECTRIC |
| 描述： | Single Color LED, Ultra High Intensity Amber, Clear, 1mm 光电 |
| 文件： | 总137页 (文件大小：2068K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CAUTION / WARNING
• The information in this publication has been carefully checked and is believed to be
accurate; however, no responsibility is assumed for inaccuracies.
• Sanken reserves the right to make changes without further notice to any products herein
in the interest of improvements in the performance, reliability, or manufacturability of its
products. Before placing an order, Sanken advises its customers to obtain the latest
version of the relevant information to verify that the information being relied upon is
current.
• Application and operation examples described in this catalog are quoted for the sole
purpose of reference for the use of the products herein and Sanken can assume no
responsibility for any infringement of industrial property rights, intellectual property rights
or any other rights of Sanken or any third party which may result from its use.
• When using the products herein, the applicability and suitability of such products for the
intended purpose or object shall be reviewed at the users responsibility.
• Although Sanken undertakes to enhance the quality and reliability of its products, the
occurrence of failure and defect of semiconductor products at a certain rate is inevitable.
Users of Sanken products are requested to take, at their own risk, preventative measures
including safety design of the equipment or systems against any possible injury, death,
fires or damages to the society due to device failure or malfunction.
• Sanken products listed in this catalog are designed and intended for the use as
components in general purpose electronic equipment or apparatus (home appliances,
office equipment, telecommunication equipment, measuring equipment, etc.).
Before placing an order, the user’s written consent to the specifications is requested.
• The use of Sanken products without the written consent of Sanken in the applications
where extremely high reliability is required (aerospace equipment, nuclear power control
systems, life support systems, etc.) is strictly prohibited.
• Anti radioactive ray design is not considered for the products listed herein.
• This publication shall not be reproduced in whole or in part without prior written approval
from Sanken.
• Gallium arsenide is used in some of the products listed in this publication. These
products are dangerous if they are burned or smashed in the process of disposal. It is
also dangerous to drink the liquid or inhale the gas generated by such products when
chemically disposed.
1
Product Groups
ꢀ Regulator
ꢀ High-side power switch
ꢀ Low-side power switch
ꢀ Motor driver IC
ꢀ Hall-Effect IC
ꢀ Custom IC
ꢀ Transistor
ꢀ MOS FET
ꢀ Rectifier Diode for alternator
ꢀ High-voltage diode for igniter
ꢀ Power Zener diode
ꢀ General-purpose diode
ꢀ LED (visible & infrared)
2
Applications
[Power Train Control]
ꢀ Engine
• Fuel injection
• Ignition control
• Air ratio control
• Emission purification control
• Idling control
• Knocking and EGR control
• Variable valve timing control
ꢀ Transmission
• Fully electronic control
• CVT control
ꢀ Alternator
[Carbody Control and Safety]
ꢀ 4WD
ꢀ 4WS
ꢀ ABS
ꢀ Power steering
ꢀ Auto cruising
ꢀ Traction control
ꢀ Stability control
ꢀ Airbag
ꢀ HID Head Lamp
[Compartment Equipment]
ꢀ Automatic air conditioner
ꢀ Power window
ꢀ Keyless entry
ꢀ Panel, Multi-media
• Meter display
• Car audio
• Navigation
• VICS
3
Contents
5
ꢀ
ꢀ
Application Note for Regulator ICs
ꢀ
ꢀ
Dropper Type Regulator ICs
6
8
•
•
•
With Output ON/OFF Control
3-terminal
2-output
SI-3001S
SI-3003S
SI-3101S
SI-3201S
10
SI-3102S
14
ꢀ
ꢀSwitching Type Regulator ICs
ꢀ
ꢀ
High-side Power Switch ICs
16
22
26
32
36
•
•
•
•
•
With Diagnostic Function
With Diagnostic Function , Built-in Zener Diode
Surface-mount 2-circuits
3-circuits
SI-5151S
SI-5153S
SDH04
SLA2501M SPF5007
SLA2502M
SI-5152S
SI-5154S
SPF5003
SI-5155S
SPF5004
4-circuits
ꢀ
ꢀ
Low-side Switch ICs
40
44
•
Surface-mount 4-circuits
Surface-mount 4-circuits with Output Monitor
SPF5002A SPF5009
SPF5012
•
46
48
52
60
62
ꢀ
ꢀ
Stepper-motor Driver IC
SLA4708M
ꢀ
ꢀ
Full-bridge PWM Motor Driver IC
High Voltage Driver ICs for HID Lamps
Hall-Effect ICs
Custom IC
SI-5300
ꢀ
ꢀ
SLA2402M SLA2403M
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Transistors and MOS FETs
64
65
66
•
•
•
Index by Application
Index by Load
Power Transistor
2SA1488/1488A 2SA1567
2SA1568
2SC4065
2SD2633
MN638S
STA415A
SLA8004
SDC09
FKV460S
FKV660S
SMA5113 SLA5027
SDK09
2SC3851
2SC4153
FN812
2SC3852
2SD2141
FP812
STA315A
STA463C
SDA03
2SC4024
2SD2382
MN611S
STA335A
STA464C
SDA04
81
•
Power Transistor Array
STA461C
88
92
•
•
Surface-mount Power Transistor Array
MOS FET
SPF0001
FKV560
2SK2701
FKV560S
STA508A
SDK06
FKV460
FKV660
STA509A
SDK08
99
•
•
MOS FET Array
Surface-mount MOS FET Array
103
106
107
108
109
110
114
116
119
125
130
ꢀ
ꢀ
Thyristor with built-in reverse diode for HID lamp ignition
TFC-561D
ꢀ
ꢀ
Rectifier Diode for Alternator
High-voltage Diode for Igniter
Power Zener Diode
General-purpose Diode
General-purpose Diode - External Dimensions
General-purpose Diode - Taping Specifications
General-purpose LEDs
General-purpose LED - External Dimensions
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Index by Part No.
4
Application Note for Regulator ICs
ꢀ Temperature and Reliability
Reliability of an IC is generally heavily dependent on
operating temperature. Heat radiation must be fully
considered, and an ample margin should be given
to the radiating area in designing heatsinks. When
mounting ICs on heatsinks, always apply silicone
grease and firmly tighten. Air convection should
actively be used in actual heat dissipation. The
reliability of capacitors and coils, the peripheral
components, is also closely related to temperature.
A high operating temperature may reduce the
service life. Exceeding the allowable temperature
may cause coils to be burned or capacitors to be
damaged. Make sure that output smoothing coils
and input/output capacitors do not exceed their
allowable temperature limit in operation. We
recommend, in particular, to provide an ample
margin for the ratings of coils to minimize heat
generation.
generally used. Moreover, the heat dissipation
capacity of a heatsink is heavily dependent on how
it is mounted. It is therefore important and
recommended to measure the heatsink and case
temperature in actual operating environments. The
Ta-PD characteristics are provided for each product
type for reference purposes.
ꢀ Setting DC Input Voltage
Observe the following precautions when setting the
DC input voltage:
• VIN (min) must be at least the set output voltage
plus dropout voltage for the dropper type. It must
be at least the recommended lowest input
voltage for the switching type.
• VIN (max) must not exceed the DC input voltage of
the electrical characteristics.
ꢀ Power Dissipation (PD)
1. Dropper Type
ꢀ Screw Torque
Screw torque should be between 0.588 to 0.686
[N • m] (6.0 to 7.0 [kgf • cm]).
PD
2. Switching Type
100
=
IO • [VIN (mean) - VO]
VO
VIN
ꢀ Recommended silicone grease
Volatile type silicone grease may produce cracks
after elapse of long term, resulting in reducing heat
radiation effect.
Silicone grease with low consistency (hard grease)
may cause cracks in the mold resin when screwing
the product to a heatsink.
PD
Efficiency
Refer to the efficiency characteristics.
=
VO • IO (
- 1) - VF • IO (1 -
)
depends on input/output conditions.
: Efficiency
VO : Output voltage
VIN: Input voltage
IO : Output current
VF : Diode forward voltage
Type
G746
Suppliers
ꢀ Heatsink Design
Shin-Etsu Chemical Co., Ltd.
The maximum junction temperature Tj (max) and the
maximum case temperature Tc (max) given in the
absolute maximum ratings are specific to each
product type and must be strictly met. Thus,
heatsink design must be performed in consideration
of the condition of use which affects the maximum
power dissipation PD (max) and the maximum
ambient temperature Ta (max). To facilitate heatsink
design, the relationship between these two
parameters is presented in the Ta-PD characteristic
graphs. Heatsink design must be performed in the
following steps:
YG6260
SC102
GE Toshiba Silicones Co., Ltd.
Dow Corning Toray Silicone Co., Ltd.
ꢀ Others
This product may not be connected in parallel.
The switching type may not be used for current
boosting and stepping up voltage.
1. Obtain the maximum ambient temperature Ta
(max) (within the set).
2. Obtain the maximum power dissipation PD
(max).
3. Identify the intersection on the Ta-PD
characteristic graph and obtain the size of the
heatsink to be used.
The size of a heatsink has been obtained. In actual
applications, a 10 to 20% derating factor is
5
Dropper Type Regulator ICs [With Output ON/OFF Control] SI-3001S
(unit: mm)
Features
External Dimensions
Output current of 1.0A
5-terminal type <output on/off control, variable output voltage (rise only)>
Voltage accuracy of ±2%
Low dropout voltage 1V at IO 1.0A, 0.5V at IO 0.4A
Built-in overcurrent, overvoltage and thermal protection circuits
Withstands external electromagnetic noises
TO220 equivalent full-mold package
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
±0.2
3.2
±0.2
±0.2
4.2
2.8
±0.2
10.0
a
b
±0.1
2.6
Absolute Maximum Ratings
±0.15
0.95
(Ta =25ºC)
Conditions
+0.2
Parameter
Symbol
Ratings
35
Unit
V
–0.1
0.85
+0.2
DC Input Voltage
VIN
–0.1
0.45
Output Control Terminal Voltage
Output Current
VC
VIN
V
±0.7
P1.7±0.7•4=6.8
3.9
(4.3)
±0.7
±0.7
1.0 *1
A
8.2
IO
PD1
PD2
Tj
18
W
W
ºC
ºC
ºC
With infinite heatsink
Power Dissipation
1. GND
1.5
Stand-alone without heatsink
2. VC (on/off)
a: Part No.
b: Lot No.
1
2
3
4
5
3. V
4. V
o
Junction Temperature
Operating Temperature
Storage Temperature
– 40 to +125
– 40 to +100
– 40 to +125
osense
5. VIN
TOP
Tstg
(Forming No. 1101)
Junction to Case Thermal
Resistance
5.5
ºC/W
ºC/W
j-c
j-a
Junction to Ambient-Air Thermal
Resistance
Stand-alone without heatsink
66.7
Equivalent Circuit Diagram
Tr1
3
5
VO
VIN
R1
MIC
4
Electrical Characteristics
V
O sense
R3
(Tj=25ºC, VIN=14V unless otherwise specified)
a
Ratings
Parameter
Symbol
Unit
Conditions
min
6 *2
typ
max
30 *1
5.10
0.5
e
f
d
R4
b
VIN
VO
V
V
Input Voltage
2
g
c
Vc
(on/off)
4.90
5.00
VIN =12 to 16V, IO=0.4A
IO 0.4A
Output Voltage
Dropout Voltage
R2
V
VDIF
1.0
V
IO 1.0A
1
GND
a : Pre-regulator
b : Output ON/OFF control
c : Thermal protection
e : Drive circuit
f : Error amplifier
g : Reference voltage
∆VO LINE
30
mV
mV
IO=0.4A, VIN=6 to 16V
IO=0 to 0.4A
Line Regulation
Load Regulation
∆VO
100
LOAD
d : Over-input and overcurrent protection
Output Voltage Temperature
Coefficient
∆VO/∆T
±0.5
mV/ºC
IO=5mA, Ta= –10 to +100ºC
RREJ
Iq
54
3
dB
f=100 to 120Hz
IO=0A
Ripple Rejection
Standard Circuit Diagram
10
mA
Quiescent Circuit Current
D1
Overcurrent Protection Starting
Current
IS1
1.2 *3
A
4
*
Output ON
Control Voltage
VC, IH
VC, IL
IC, IH
IC, IL
2.0
V
V
5
2
3
4
SI-3001S
1
OPEN
C2
Output OFF
0.8
20
+
+
DC input
VIN
DC output
VO
CO
Output ON
Control Current
µA
mA
VC =2.7V
C1
Output OFF
–0.3
VC =0.4V
Notes:
Co :
Output capacitor (47 to 100µF, 50V)
*1. Since PD(max) =(VIN –VO)• IO =18(W), VIN(max)and IO(max)may be limited depending on operating
conditions. Refer to the Ta-PD curve to compute the corresponding values.
*2. Refer to the dropout voltage.
*3. IS1 rating shall be the point at which the output voltage VO (VIN = 14V, Io = 0.4A) drops to –5%.
*4. The output control terminal Vc is pulled up inside the IC. Each input level can be directly driven with
LS-TTL ICs. Thus, LS-TTL direct driving is also possible.
C1, C2 : Input capacitors (C1: approx. 47µF, C2: approx. 0.33µF).
These are required for inductive input lines or long wiring.
Tantalum capacitors are recommended for C1 and Co,
especially at low temperatures.
D1
:
Protection diode. Required as protection against reverse
biasing between input and output.
(Recommended diode: Sanken EU2Z.)
6
SI-3001S
Electrical Characteristics
I
vs VDIF Characteristicsc
Line Regulation
5.1
Load Regulation
5.1
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
o
0.5
VIN
=
IO
0 (A)
0.4 (A)
1.0 (A)
=
0.4
0.3
30 (V)
12 to 16 (V)
5.5 (V)
5.0
5.0
0.2
0.1
4.9
0
4.9
0
0
0
5
10
15
20
25
30
0
0.5
1.0
0
0.5
1.0
Output current IO (A)
Input voltage VIN (V)
Output current IO (A)
Output Voltage Temperature Characteristics
5.1
Rise Characteristics
7
Quiescent Circuit Current
15
I
= 0(A)
o
6
Load resistance
5
VIN =
30(V)
10
5
12(V)
16(V)
4
3
5.0
14(V)
5.5(V)
12 (Ω)
VIN —IOUT condition
5.5 (V) 1.0 (A)
/
2
1
0
12 (V) 0.4 (A)
/
14 (V) 0.4 (A)
/
5
(Ω)
16 (V) 0.4 (A)
/
30 (V) 0 (A)
/
4.9
0
0
--50
0
50
100
150
0
2
4
6
8
10
2
4
6
8
10
0
Ambient temperature Ta (ºC)
Input voltage VIN (V)
Input voltage VIN (V)
ON/OFF Control Characteristics
6
Overcurrent Protection Characteristics
6
Thermal Protection Characteristics
6
=
=
I
0
(A)
=
o
I
0 (A)
o
VIN 6(V)
=
VIN 14 (V)
5
4
3
2
1
0
5
5
10 (V)
30 (V)
5.5(V)
4
3
2
1
0
4
3
2
20 (V)
2.5
14 (V)
2.0
1
0
ON
1
OFF
2
0
125 130 135 140 145 150 155
0
0.5
1.0
1.5
3.0
0
3
4
5
Output ON/OFF control voltage VC (V)
Output current IO (A)
Ambient temperature Ta (ºC)
Note on Thermal Protection Characteristics:
The thermal protection circuit is intended for protection
against heat during instantaneous short-circuiting. Its
operation, including reliability, is not guaranteed for
short-circuiting over an extended period of time.
Overvoltage Protection Characteristics
6
Ta—PD Characteristics
20
Use G746 silicone grease
(Shin-Etsu Chemical) and
aluminum heatsink.
With infinite heatsink
5
4
3
2
1
0
15
200•200•2mm (2.3ºC/W)
10 100•100•2mm (5.2ºC/W)
75•75•2mm (7.6ºC/W)
5
Without heatsink
0
10
20
30
40
50
--30 –20
0
20
40
60
80 100
Input voltage VIN (V)
Operating temperature Ta (ºC)
7
Dropper Type Regulator ICs [3-terminal] SI-3003S
(unit: mm)
Features
External Dimensions
4.2±0.2
2.8±0.2
ꢀ 3-terminal IC regulator with 0.8A output current
ꢀ Voltage accuracy of ±2%
3.2±0.2
10±0.2
ꢀ Low Dropout voltage 0.5V at IO 0.5A, 1V at IO 0.8A
ꢀ
Built-in dropping type overcurrent, overvoltage and thermal protection circuits
ꢀ TO220 equivalent full-mold package
a
2.6±0.15
b
Absolute Maximum Ratings
(Ta=25ºC)
Parameter
Symbol
Ratings
35
Unit
V
Conditions
0.94±0.15
+0.2
DC input voltage
Output current
VIN
–0.1
2
0.85
*
IO
0.8
A
PD1
PD2
Tj
22
W
With infinite heatsink
Power Dissipation
+0.2
1.8
W
Stand-alone without heatsink
4•P1.7±0.15 =6.8±0.15
–0.1
0.45
(root dimensions)
Junction temperature
Operating temperature
Storage temperature
–40 to +150
–40 to +100
–40 to +150
5.5
ºC
Terminal connections
1. VIN
TOP
Tstg
j-c
ºC
ºC
a: Part No.
b: Lot No.
2. (NC)
3. GND
4. (NC)
5. VO
1
2 3 4 5
Junction to case thermal resistance
ºC/W
Junction to ambient-air thermal
resistance
Stand-alone without heatsink
66.7
ºC/W
j-a
(Forming No. 1115)
Electrical Characteristics
Equivalent Circuit Diagram
(Tj=25ºC, VIN=14V, IO=0.5A unless otherwise specified)
Ratings
Parameter
Symbol
Unit
Conditions
min
typ
max
30
2
1
VIN
VO
6
*
V
V
Input voltage
*
VIN
1
VO
4.90
5.00
5.10
0.5
Output voltage
Dropout voltage
5
OCP
V
IO 0.5A
IO 0.8A
VDIF
1.0
V
TSD
DET
ERR
VO LINE
30
mV
mV
dB
mA
VIN=8 to 16V
O=0 to 0.5A
f=100 to 120Hz
IO=0A
Line regulation
REF
VO
100
I
Load regulation
LOAD
RREJ
Iq
54
3
Ripple rejection
10
Quiescent circuit current
3
GND
Overcurrent protection starting
current
3
*
IS1
0.9
A
Notes:
*1. Since PD(max) = (VIN–VO) • IO=22(W), VIN(max) and IO(max) may be limited depending on operating
conditions. Refer to the Ta—PD curve to compute the corresponding values.
*2. Refer to the dropout voltage.
Standard Circuit Diagram
*3. IS1 rating shall be the point at which the output voltage VO (VIN=14V, IO=0.5A) drops to –5%.
2
D1 *
1
2
5
4
SI-3003S
3
1
+
+
N.C
*
DC input
VIN
DC output
VO
N.C
CO
C2
C1
Co :
1
Output capacitor (47 to 100µF, 50V)
C1,C2: Input capacitors (C1: approx. 47µF, C2: approx. 0.33µF).
These are required for inductive input lines or long
wiring. Tantalum capacitors are recommended for C1
and Co, especially at low temperatures.
*
2 D1
:
Protection diode. Required as protection against reverse
biasing between input and output.
*
(Recommended diode: Sanken EU2Z.)
8
SI-3003S
Electrical Characteristics
I
vs VDIF Characteristics
Line Regulation
5.1
Load Regulation
5.1
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
o
0.5
0.4
0.3
0.2
5.0
5.0
IO=0A
=0.2A
IO=0.5, 0.8A
=0.2A
=0A
VIN
=
=
=
35V
25V
14V
=0.5A
=0.8A
=
6V
4.9
0
4.9
0
0.1
0
0
0.2
0.4
0.6
0.8
0
5
10
15
20
25
30 35
0
0.2
0.4
0.6
0.8
Output current IO (A)
Input voltage VIN (V)
Output current IO (A)
Output Voltage Temperature Characteristics
5.1
Rise Characteristics
Circuit Current
250
6
IO=0A
=0.5A
=0.8A
5
200
150
VIN / IO
:
4
3
2
1
0
30V/0A
14V/0.5A
6V/0.8A
5.0
IO
=
0.8A
0.5A
0.2A
0A
100
50
0
=
=
=
4.9
–50
0
50
100
150
0
2
4
6
8
10
0
5
10
15
20
25
30
35
Input voltage VIN (V)
Input voltage VIN (V)
Ambient temperature Ta (ºC)
Overcurrent Protection Characteristics
6
Thermal Protection Characteristics
Ta—PD Characteristics
6
25
VIN=6V
With silicone grease
Heatsink: aluminum
With infinite heatsink
I
O=5mA
5
4
3
5
4
20
200•200•2mm
(2.3ºC/W)
15
100•100•2mm
(5.2ºC/W)
3
2
1
0
10
2
1
0
VIN=6V
14V
35V
25V
75•75•2mm
(7.6ºC/W)
5
Without heatsink
0
120
140
160
180
200
–40
0
40
80 100
0
0.5
1.0
1.5
2.0
2.5
Ambient temperature Ta (ºC)
Operating temperature Ta (ºC)
Output current IO (A)
Note on Thermal Protection Characteristics:
The thermal protection circuit is intended for protection
against heat during instantaneous short-circuiting. Its
operation, including reliability, is not guaranteed for
short-circuiting over an extended period of time.
9
Dropper Type Regulator ICs [2-output] SI-3101S
(unit: mm)
External Dimensions
Features
3.2±0.2
ꢀ Single input dual output <sub output (5V/0.07A), main output (5V/0.4A)>
ꢀ Main output can be externally turned ON/OFF (with ignition switch, etc.)
<most suitable as memory backup power supply>
ꢀ Low standby current ( 0.8mA)
4.2 ±0.2
2.8±0.2
10.0±0.2
ꢀ Low dropout voltage 1V
ꢀ
Built-in dropping type overcurrent, overvoltage and thermal protection circuits
ꢀ TO220 equivalent 5-terminal full-mold package
a
2.6±0.1
b
0.95±0.15
+0.2
Absolute Maximum Ratings
(Ta=25ºC)
–0.1
0.85
Parameter
Symbol
Ratings
40
Unit
V
Conditions
+0.2
–0.1
0.45
DC input voltage
VIN
P1.7±0.7 • 4 = 6.8±0.7
3.9
(4.3)
8.2±0.7
6
*
Battery reverse connection
Output control terminal voltage
VINB
VC
–13
V
One minute
VIN
V
1
1. VIN
*
CH1
Output current
CH2
IO1
0.07
A
2. VC (on/off) a: Part No.
0.4 *1
18
A
1
2
3
4
5
3. GND
4. VO1
5. VO2
IO2
b: Lot No.
PD1
PD2
Tj
W
With infinite heatsink
Power Dissipation
1.5
W
Stand-alone without heatsink
(Forming No. 1101)
Junction Temperature
Operating temperature
Storage temperature
–40 to +125
–40 to +115
–40 to +125
5.5
ºC
ºC
ºC
ºC/W
TOP
Tstg
j-c
Equivalent Circuit Diagram
Junction to case thermal resistance
Junction to ambient-air thermal
resistance
Stand-alone without heatsink
66.7
ºC/W
j-a
VO1
VIN
1
4
5
OCP
TSD
DET
ERR
Electrical Characteristics
(Tj=25ºC, VIN=14V unless otherwise specified)
REF
Ratings
VO2
Parameter
Symbol
Unit
Conditions
min
typ
max
OCP
ERR
2
1
VIN
VO1
VO2
6
35
V
V
V
*
*
Input voltage
OVP
DET
4.80
4.80
5.00
5.00
5.20
5.20
IO=0.05A
O=0.3A
CH1
CH2
Output voltage
I
3
2
CONT
GND
VC
IO1
IO2
=
=
0 to 0.05A
0 to 0.3A
Channel-channel voltage difference
(V
–0.1
0.1
V
VO
—
V )
O2
O1
VDIF1
VDIF2
1.0
1.0
30
30
70
70
V
V
IO1 0.05A
CH1
CH2
CH1
CH2
CH1
CH2
CH1
CH2
Dropout voltage
Line regulation
Load regulation
IO2 0.4A
VO
10
10
30
40
54
54
mV
mV
mV
mV
dB
dB
mA
A
VIN=6 to 18V, IO=0.05A
VIN=6 to 18V, IO=0.3A
LINE1
Standard Circuit Diagram
VO
LINE2
D3
VO
IO1=0 to 0.05A
LOAD1
D2
VO2
VIN
VO
IO2=0 to 0.3A
LOAD2
5
4
1
2
SI-3101S
3
D1
RREJ1
RREJ2
Iq
f=100 to 120Hz
f=100 to 120Hz
Ripple rejection
VC
VO1
+
+
+
GND
Quiescent circuit current
0.8
IO1=0A, VC=0V
CIN
CO1
CO2
3
*
I(S1) 1
I(S1) 2
VCH
VCL
0.1
0.5
4.2
3.2
CH1
Overcurrent protection
starting current
3
*
A
CH2
4.5
3.5
4.8
3.8
100
V
Output ON
Output OFF
Output ON
Output OFF
CO1
CO2
:
:
Output capacitor (47 to 100µF, 50V)
Output capacitor (47 to 100µF, 50V)
Input capacitors (approx. 47µF).
Output control voltage
Output control current
V
*1 CIN
:
ICH
µA
µA
VC=4.8V
C=3.2V
Tantalum capacitors are recommended for CO1, CO2
and CIN, especially at low temperatures.
: Protection diode.
ICL
–100
V
*2D1, D2, D3
Overvoltage protection starting
voltage
4
*
VOVP
35
V
Required as protection against reverse biasing
between input and output.
Thermal protection starting
temperature
(Recommended diode: Sanken EU2Z.)
TTSD
130*5
ºC
Notes:
*1. Since PD(max) = (VIN –VO) • IO1+ (VIN –VO2) • IO2 =18 (W), VIN (max), IO1(max) and IO2(max) may be limited
depending on operating conditions. Refer to the Ta—PD curve to compute the corresponding values.
*2. Refer to the dropout voltage.
*3. IS1 rating shall be the point at which the output voltage VO1 or VO2 (VIN =14V, IO1 =0.05A or IO2 =0.3A)
drops to –5%.
*4. Overvoltage protection circuit is built only in CH2 (VO2 side).
*5. The indicated temperatures are junction temperatures.
*6. All terminals, except VIN and GND, are open.
10
SI-3101S
Electrical Characteristics
Line Regulation (1)
5.1
Line Regulation (2)
5.1
Load Regulation (1)
5.1
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
=
VC 5 (V)
=
=
=
VC 5 (V)
VC 5 (V)
=
IO1 0 (A)
=
IO2 0 (A)
IO2
0
(A)
IO2
=
0A
=
0mA
IO1
VIN
=
6V
14V
22V
0.3A
50mA
5.0
5.0
5.0
0.5A
70mA
4.9
0
4.9
0
4.9
0
0
5
10
15
20
25
0
5
10
15
20
25
0
10
20
30
40
50
60 70
Input voltage VIN (V)
Input voltage V IN (V)
Output current IO (mA)
Load Regulation (2)
5.1
Rise Characteristics
6
Quiescent Circuit Current
10
=
VC 5 (V)
=
IO1 0 (A)
=
(A)
IO1
0
5
=
0 (V)
V
c
VIN
=
Load resistor
6V,14V
4
100Ω
5.0
22V
3
∞
5
0
2
1
71.4Ω
4.9
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0
2
4
6
8
10
0
5
10
15
20
Output current IO (A)
Input voltage VIN (V)
Input voltage VIN (V)
ON/OFF Control Characteristics
6
Overcurrent Protection Characteristics (1)
6
Overcurrent Protection Characteristics (2)
6
5
4
5
5
VIN
=
4.5V
6V
14V
22V
4
3
4
VIN
=
=
VIN
14V, 22V
6V
6V
14V
22V
=
IO2 0 (A)
=
IO1 0 (A)
3
2
1
0
=
3
2
VC 5 (V)
=
VC 5 (V)
4.5V
2
1
OFF
3
ON
1
0
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Output current IO (A)
0
1
2
4
5
6
0
0.05
0.1
0.15
Output ON/OFF control voltage VC (V)
Output current IO (A)
Thermal Protection Characteristics
6
Overvoltage Protection Characteristics
6
Ta—PD Characteristics
20
With silicone grease G746
(Shin-Etsu Chemical)
Heatsink: aluminum
=
=
VIN 6 (V)
With infinite heatsink
=
IO1 IO2 5(mA)
5
4
5
15
VO1
200•200•2mm (2.3ºC/W)
4
=
=
IO1 IO2 5 (mA)
VO2
=
VC 5 (V)
10 100•100•2mm (5.2ºC/W)
75•75•2mm (7.6ºC/W)
3
2
3
2
5
1
0
1
0
Without heatsink
0
--30 --20
0
20 40
60 80 100 115
10
20
30
40
0
130
140
150
160
Ambient temperature Ta (ºC)
Note on Thermal Protection Characteristics:
Input voltage VIN (V)
Operating temperature Ta (ºC)
The thermal protection circuit is intended for protection against heat
during instantaneous short-circuiting. Its operation, including reliability,
is not guaranteed for short-circuiting over an extended period of time.
11
Dropper Type Regulator ICs [2-output] SI-3102S
(unit: mm)
External Dimensions
Features
ꢀ Single input dual output <sub output (5V/0.04A), main output (5V/0.1A)>
ꢀ Main output can be externally turned ON/OFF (with ignition switch, etc.)
<most suitable as memory backup power supply>
ꢀ Low standby current ( 0.8mA)
3.2±0.2
10.0±0.2
4.2 ±0.2
2.8 ±0.2
ꢀ Low dropout voltage 1V
ꢀ
Built-in dropping type overcurrent, overvoltage and thermal protection circuits
ꢀ TO220 equivalent 5-terminal full-mold miniature package
a
2.6 ±0.1
b
Absolute Maximum Ratings
0.95±0.15
+0.2
(Ta=25ºC)
Conditions
Parameter
Symbol
Ratings
35
Unit
V
–0.1
0.85
+0.2
DC input voltage
VIN
–0.1
0.45
6
*
Battery reverse connection
Output control terminal voltage
VINB
VC
–13
V
One minute
P1.7±0.7• 4=6.8±0.7
3.9±0.7 (4.3)
8.2±0.7
VIN
V
1
CH1
Output current
CH2
IO1
0.04
A
*
1. VIN
a: Part No.
b: Lot No.
1
IO2
0.1
22
A
*
2. VC (on/off)
3. GND
4. VO1
1
2
3
4
5
PD1
PD2
Tj
W
With infinite heatsink
Power Dissipation
5. VO2
1.8
W
Stand-alone without heatsink
(Forming No. 1101)
Junction temperature
Operating temperature
Storage temperature
–40 to +150
–40 to +105
–40 to +150
5.5
ºC
ºC
ºC
ºC/W
TOP
Tstg
j-c
Junction to case thermal resistance
Equivalent Circuit Diagram
Junction to ambient-air thermal
resistance
Stand-alone without heatsink
66.7
ºC/W
j-a
VO1
VIN
1
4
5
OCP
TSD
DET
Electrical Characteristics
(Tj =25ºC, VIN =14V unless otherwise specified)
ERR
Ratings
Parameter
Input voltage
Output voltage
Symbol
Unit
Conditions
REF
min
6
typ
max
1
2
VO2
VIN
VO1
VO2
30
V
V
V
*
*
CH1
CH2
4.80
4.80
5.00
5.00
5.20
5.20
IO =0.04A
IO =0.1A
OCP
ERR
OVP
DET
IO1
IO2
=
=
0 to 0.04A
0 to 0.1A
Channel-channel voltage difference
(V
–0.1
0.1
V
VO
—
V )
O2
3
O1
2
CONT
GND
VC
VDIF1
VDIF2
1.0
1.0
50
50
70
70
V
V
IO1 0.04A
CH1
CH2
CH1
CH2
CH1
CH2
CH1
CH2
Dropout voltage
IO2 0.1A
VO
10
10
30
40
54
54
mV
mV
mV
mV
dB
dB
mA
A
VIN =6 to 30V, IO =0.04A
VIN =6 to 30V, IO =0.1A
IO1 =0 to 0.04A
LINE1
Line regulation
Load regulation
Ripple rejection
VO
LINE2
VO
LOAD1
VO
IO2 =0 to 0.1A
LOAD2
RREJ1
RREJ2
Iq
f=100 to 120Hz
f=100 to 120Hz
Standard Circuit Diagram
Quiescent circuit current
0.8
IO1 =0A, VC = 0 V
3
*
I(S1) 1
I(S1) 2
VCH
VCL
0.06
0.15
4.2
D3
CH1
Overcurrent protection
starting current
3
*
A
CH2
D2
VO2
VIN
5
4
1
2
4.5
3.5
4.8
3.8
100
V
Output ON
Output OFF
Output ON
Output OFF
SI-3102S
3
D1
Output control voltage
Output control current
3.2
V
VC
VO1
ICH
µA
µA
VC =4.8V
+
+
+
GND
CIN
CO1
CO2
ICL
–100
VC =3.2V
Overvoltage protection starting
voltage
VOVP
30 *4
V
Thermal protection starting
temperature
CO1
CO2
:
:
Output capacitor (47 to 100µF, 50V)
Output capacitor (47 to 100µF, 50V)
Input capacitors (approx. 47µF).
5
*
TTSD
151
ºC
*1 CIN
:
Tantalum capacitors are recommended, for CO1
,
Notes:
CO2 and CIN, especially at low temperatures.
*1. Since PD(max) = (VIN –VO) • IO1+ (VIN –VO2) • IO2 = 22 (W), VIN (max), IO1(max) and IO2(max) may be limited
depending on operating conditions. Refer to the Ta—PD curve to compute the corresponding values.
*2. Refer to the dropout voltage.
*3. IS1 rating shall be the point at which the output voltage VO1 or VO2 (VIN =14V, IO1 =0.04A or IO2 =0.1A)
drops to –5%.
*2D1, D2, D3
:
Protection diode.
Required as protection against reverse biasing
between input and output.
(Recommended diode: Sanken EU2Z.)
*4. Overvoltage protection circuit is built only in CH2 (VO2 side).
*5. The indicated temperatures are junction temperatures.
*6. All terminals, except VIN and GND, are open.
12
SI-3102S
Electrical Characteristics
Line Regulation (1)
5.10
Line Regulation (2)
5.10
Load Regulation (1)
5.10
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
VIN = V C
IO2 =5mA
VIN = V C
IO1 =5mA
VIN = V C
5.05
5.05
5.05
IO2
0A
50mA
100mA
=
VIN
6V
14V
30V
=
IO1
0A
20mA
40mA
=
5.00
4.95
4.90
4.85
5.00
4.95
4.90
4.85
5.00
4.95
4.90
4.85
0
5
10 15
20
25
30 35
0
5
10 15
20
25
30 35
0
10
20
30
40
50
Input voltage V IN (V)
Input voltage VIN (V)
Output current IO (mA)
Load Regulation (2)
5.10
Rise Characteristics
6
Quiescent Circuit Current
12
VC = 0 V
VIN = V C
I
O1 = 0 A
5
4
3
10
8
5.05
VIN
=
6V,14V
5.00
4.95
4.90
4.85
IO1 = 0 A
20mA
40mA
6
2
1
0
4
2
0
30V
0
20
40
60
80
100
0
1
2
3
4
5
6
7
0
5
10
15
20
25 30
35
Output current IO (mA)
Input voltage VIN (V)
Input voltage VIN (V)
ON/OFF Control Characteristics
6
Overcurrent Protection Characteristics (1)
Overcurrent Protection Characteristics (2)
6
6
VIN =14V
O2 =5mA
VIN = V C
IO2 =5mA
VIN = V C
IO1 =5mA
I
5
5
5
4
4
3
2
4
OFF
VIN
=
VIN =
3
2
1
0
3
2
6V
6V
14V
30V
ON
14V
30V
1
0
1
0
0
1
2
3
4
5
6
0
20
40
60
80
100 120
0
0.1
0.2
0.3
0.4
0.5
Output ON/OFF control voltage VC (V)
Output current IO (mA)
Output current IO2 (A)
Thermal Protection Characteristics
Overvoltage Protection Characteristics
Ta—PD Characteristics
ꢀ
6
6
25
With silicone grease G746
(Shin-Etsu Chemical)
Heatsink: aluminum
VIN = 6 V
VIN = V C
IO2 =5mA
With infinite heatsink
I
O1 = I O2 =5mA
5
5
20
VO1
200•200•2mm
(2.3ºC/W)
4
3
2
4
15
100•100•2mm
(5.2ºC/W)
3
VO2
10
75•75•2mm
(7.6ºC/W)
2
5
1
1
0
Without heatsink
0
0
100
120 140
180 200 220
240
26
28
30
32
34
36
38
–
40
–
20
0
20 40 60 80 100 120 140 160
Ambient temperature Ta (ºC)
Note on Thermal Protection Characteristics:
Input voltage VIN (V)
Operating temperature Ta (ºC)
The thermal protection circuit is intended for protection against heat
during instantaneous short-circuiting. Its operation, including reliability,
is not guaranteed for short-circuiting over an extended period of time.
13
Switching Type Regulator ICs SI-3201S
(unit: mm)
External Dimensions
Features
ꢀ Output current of 3A (Ta=25ºC, VIN =8 to 18V)
ꢀ High efficiency of 82% (VIN =14V, IO = 2 A)
ꢀ Requires 5 external components only
ꢀ Built-in reference oscillator (60kHz)
ꢀ Phase internally corrected
3.2±0.2
4.2±0.2
2.8±0.2
10.0±0.2
ꢀ Output voltage internally corrected
ꢀ Built-in overcurrent and thermal protection circuits
ꢀ Built-in soft start circuit
a
b
2.6 ±0.1
0.95±0.15
0.85+–00..21
Absolute Maximum Ratings
(Ta=25ºC)
Parameter
Symbol
Ratings
Unit
Conditions
+0.2
–0.1
0.45
Input voltage
VIN
IO
35
3
V
A
V
P1.7±0.7 •4 =6.8±0.7
3.9±0.7
8.2±0.7
(4.3)
Output voltage
SWOUT terminal voltage
VSWOUT
–1
1. VIN
a: Part No.
b: Lot No.
PD1
PD2
Tj
22
1.8
W
W
With infinite heatsink
Stand-alone
2. SWOUT
3. GND
4. VS
Power Dissipation
1
2
3
4
5
5. SS
Junction temperature
–40 to +150
–40 to +125
5.5
ºC
(Forming No. 1101)
Storage temperature
Tstg
j-c
ºC
Junction to case thermal resistance
ºC/W
Junction to ambient-air thermal
resistance
66.7
ºC/W
j-a
Standard Circuit Diagram
L1
SI-3201S
1
2
SW Tr
VIN
VO
VIN
Recommended Operating Conditions
SWOUT
a
d
f
b
c
Ratings
e
g
Parameter
Symbol
Unit
Conditions
min
8
typ
max
18
D1
+
+
C1
C2
Input voltage
VIN
IO
V
A
5
SS
h
VS
4
Output current
0.5
–40
3
i
C3
GND
3
Operating temperature
Top
+85
ºC
Ta—PD characteristics
GND
GND
C1: 1000µF
C2: 1000µF
L 1: 250µH
D1: RK46 (Sanken)
Electrical Characteristics
(VIN =14V, IOUT =2A, Tj =25ºC unless otherwise specified)
Ratings
a: Internal power supply
b: Thermal protection
c: Reference oscillator
d: Reset
f: Comparator
g: Overcurrent protection
h: Error amplifier
Parameter
Symbol
Unit
Conditions
min
typ
max
5.20
100
50
Output voltage
VO
4.80
5.00
V
i: Reference voltage
e: Latch & driver
VIN =8 to 18V
IO =0.5 to 3A
Line regulation
Load regulation
VO
mV
mV
%
LINE
VO
LOAD
Cautions:
(1) A high-ripple current flows through C1 and C2. Use high-ripple
type 1000µF or higher capacitors with low internal resistance.
Refer to the respective data books for more information on
reliability and electrical characteristics of the capacitor.
(2) C3 is a capacitor used for soft start.
1
*
82
60
5
Efficiency
fOSC
Iq
50
70
10
kHz
mA
Oscillation frequency
I
O = 0 A
Quiescent circuit current
Overcurrent protection starting
current
2
*
(3) L1 should be a choke coil with a low core loss for switching
power supplies.
IS
3.1
A
(4) Use a Schottky barrier diode for D1 and make sure that the
reverse voltage applied to the 2nd terminal (SWOUT terminal) is
within the maximum ratings (–1V). If you use a fast-recovery
diode, the recovery voltage and the ON forward voltage may
cause a reversed-bias voltage exceeding the maximum ratings
to be applied to the 2nd terminal (SWOUT terminal). Applying a
reversed-bias voltage exceeding the maximum rating to the
2nd terminal (SWOUT terminal) may damage the IC.
(5) The 4th terminal (VS) is an output voltage detection terminal.
Since this terminal has a high impedance, connect it to the
positive (+) terminal of C2 via the shortest possible route.
(6) Leave the 5th terminal (soft start terminal) open when not
using it. It is pulled up internally.
Low level voltage
VSSL
ISSL
RDIS
0.2
35
V
3
*
Soft
start
Source current when low
Discharge resistance
15
25
µA
kΩ
V
SSL =0.2V
terminal
200
VIN = 0 V
Notes:
*1. Efficiency is calculated by the following equation:
VO • IO
=
• 100 (%)
VIN • IIN
*2. A dropping-type overcurrent protection circuit is built in the IC.
*3. An external voltage may not be applied to the soft start terminal. As shown in the diagram to the
right, use this IC in the soft start mode with a capacitor or in the open-collector drive mode with a
transistor. Leave the soft start terminal open when not using it since it is already pulled up in the IC.
(7) To ensure optimum operating environment, connect the high-
frequency current line with minimum wiring length.
SI-3201S
SI-3201S
SS
SI-3201S
SS
5
SS
C3
5
5
C3
14
SI-3201S
Electrical Characteristics
Line Regulation
5.10
Load Regulation
5.15
Rise Characteristics
6
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
=
=
=
=
I
0A
1A
2A
3A
o
5
4
5.10
5.05
5.05
5.00
4.95
4.90
4.85
=
=
=
=
I
0A
1A
2A
3A
o
5.00
3
2
=
=
=
VIN 18V
10V
7V
4.95
4.90
4.85
1
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10 15
20
25
30 35
0
2
4
6
8
10
Input voltage VIN (V)
Output current IO (A)
Input voltage VIN (V)
Efficiency Curve
90
Overcurrent Protection Characteristics
6
Overcurrent Protection Temperature Characteristics
6
ꢀ
ꢀ
5
5
4
80
=
VIN 18V
=
VIN 18V
4
3
2
1
0
=
=
10V
7V
=+
TC 100, 25, 20ºC
--
70
60
=
10V
7V
=
3
2
50
40
1
0
0
1.0
2.0
3.0
4.0
5.0
0
1.0
2.0
3.0
4.0
5.0
0
0.5
1.0
1.5
2.0
2.5
3.0
Output current IO (A)
Output current IO (A)
Output current IO (A)
Ta—PD Characteristics
25
With silicone grease
Heatsink: aluminum
With infinite heatsink
20
15
10
5
0
–40
0
40
80
120
160
Operating temperature Ta (ºC)
15
High-side Power Switch ICs [With Diagnostic Function] SI-5151S
(unit: mm)
External Dimensions
Features
ꢀ Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
4.2±0.2
3.2±0.2
10 ±0.2
2.8 ±0.2
ꢀ Low saturation PNP transistor use
ꢀ Allows direct driving using LS-TTL and C-MOS logic levels
ꢀ Built-in overcurrent and thermal protection circuits
ꢀ Built-in protection against reverse connection of power supply
ꢀ TO220 equivalent full-mold package not require insulation mica
2.6±0.1
a
b
0.94±0.15
Absolute Maximum Ratings
(Ta=25ºC)
Conditions
R-end
Parameter
Power supply voltage
Input terminal voltage
DIAG terminal voltage
Collector-emitter voltage
Output current
Symbol
Ratings
Unit
V
VB
40
+0.2
+0.2
–0.1
0.45
–0.1
0.85
VIN
–0.3 to VB
V
P1.7±0.1 • 4 = 6.8
4 ±0.6
VDIAG
VCE
6
40
1.8
18
V
1. GND
a: Part No.
b: Lot No.
V
2. VIN
3. VO
IO
A
4. DIAG
5. VB
PD1
W
With infinite heatsink (Tc= 2 5 ºC)
Power Dissipation
Stand-alone without heatsink
(Forming No. 1123)
PD2
1.5
W
(Tc= 2 5 ºC)
Junction temperature
Operating temperature
Storage temperature
Tj
–40 to +125
–40 to +100
–40 to +125
ºC
ºC
ºC
TOP
Tstg
Standard Circuit Diagram
VB
5
Electrical Characteristics
VO
(Ta=25ºC unless otherwise specified)
PZ
3
Ratings
typ
SI-5151S
VCC
Parameter
Symbol
Unit
Conditions
min
6.0
max
30
12
0.5
1.0
2
VIN
2
DIAG
VBopr
Iq
V
mA
V
Operating power supply voltage
Quiescent circuit current
4
5.1kΩ
LS-TTL
or
5
VBopr =14V, VIN = 0 V
1
CMOS
IO 1.0A, VBopr =6 to 16V
IO 1.8A, VBopr =6 to 16V
Saturation voltage of output
transistor
VCE (sat)
V
IO, leak
mA
V
V
V
V
CEO =16V
Output leak current
GND
Truth table
VIH
2.0
VB
0.8
1
Bopr =6 to 16V
Bopr =6 to 16V
Output ON
Input voltage
VIN
H
VO
H
L
VIL
–0.3
V
Output OFF
L
IIH
mA
mA
VIN = 5 V
VIN = 0 V
Output ON
Input current
IIL
–0.1
Output OFF
Overcurrent protection starting
current
IS
1.9
A
VBopr = 14V, VO = VBopr –1.5V
Diagnostic Function
Thermal protection starting
temperature
TTSD
125
145
ºC
Open load detection resistor
Ropen
TON
TOFF
VDH
30
30
30
6
kΩ
µs
µs
V
VBopr =6 to 16V
Normal
Open load
Shorted load
Overheat
Normal
8
VBopr =14V, IO = 1 A
VBopr =14V, IO = 1 A
VCC = 6 V
VIN
VO
Output transfer time
15
4.5
DIAG output voltage
VDL
0.3
30
30
V
VCC =6V, IDD =2mA
VBopr =14V, IO = 1 A
DIAG
TPLH
TPHL
L
µs
µs
mH
DIAG output transfer time
Minimum load inductance
VBopr =14V, IO = 1 A
1
VIN
VO
DIAG
Mode
Note:
L
H
L
L
H
H
H
L
L
H
H
H
L
Normal
* The rule of protection against reverse connection of power supply is VB = –13V, one minute
(all terminals except, VB and GND, are open).
Open load
Shorted load
Overheat
H
L
H
L
H
L
L
L
L
L
L
ꢀ DIAG output will be undetermined when a voltage
exceeding 25V is applied to VB terminal.
16
SI-5151S
Electrical Characteristics
Quiescent Circuit Current
10
Circuit Current
40
Saturation Voltage of Output Transistor
1.0
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
=
T
a
--40ºC
30
20
VB
=
6 to 16V
=
=
T
25ºC
95ºC
a
--40ºC
95ºC
25ºC
95ºC
5
0.5
T
a
--40ºC
10
0
25ºC
0
0
0
10
20
30
40
0
10
20
30
40
50
0
1
2
3
VB (V)
V
B (V)
IO (A)
Overcurrent Protection Characteristics (Ta= –40ºC)
16
Overcurrent Protection Characteristics (Ta=25ºC)
16
Overcurrent Protection Characteristics (Ta=100ºC)
16
14
14
14
VB=
14V
VB=
14V
VB=
14V
12
10
12
12
10
8
10
8
6
4
2
0
8
6
4
2
6
4
2
0
0
0
1
2
3
0
1
2
3
0
1
2
3
IO (A)
I
O (A)
IO (A)
Threshold input voltage
20
Input Current (Output ON)
1.0
Input Current (Output OFF)
2
=
VIN 0V
=
VIN 5V
Ta =
95ºC
=
VB 14V
=
VB 14V
25ºC –40ºC
15
=
VB 16V
=
IO 1A
1
0
10
5
0.5
0
–40
0
0
50
100
–40
0
50
100
0
1
2
2.2
VIN (V)
Ta (ºC)
Ta (ºC)
Saturation Voltage of DIAG Output
0.2
Thermal Protection Characteristics
16
=
VB 14V
V
o
14
12
DIAG
6
5
4
3
2
1
=
VB 14V
10
8
=
IO 10mA
0.1
6
4
2
0
0
–40
0
50
100
Ta (ºC)
150
0
50
100
Ta (ºC)
17
High-side Power Switch ICs [With Diagnostic Function] SI-5152S
(unit: mm)
External Dimensions
Features
ꢀ Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
4.2±0.2
3.2±0.2
10 ±0.2
2.8 ±0.2
ꢀ Low saturation PNP transistor use
ꢀ Allows direct driving using LS-TTL and C-MOS logic levels
ꢀ Built-in overcurrent and thermal protection circuits
ꢀ Built-in protection against reverse connection of power supply
ꢀ Tj = 150ºC guaranteed
2.6±0.1
a
b
ꢀ TO220 equivalent full-mold package not require insulation mica
0.94±0.15
R-end
Absolute Maximum Ratings
(Ta =25ºC)
Parameter
Power supply voltage
Input terminal voltage
DIAG terminal voltage
Collector-emitter voltage
Output current
Symbol
Ratings
Unit
V
Conditions
+0.2
+0.2
–0.1
0.45
–0.1
0.85
VB
40
P1.7±0.1 • 4 = 6.8
4 ±0.6
VIN
–0.3 to VB
V
VDIAG
VCE
IO
6
40
V
1. GND
a: Part No.
b: Lot No.
2. VIN
3. VO
V
4. DIAG
5. VB
1.8
A
PD1
PD2
Tj
22
W
W
ºC
ºC
ºC
With infinite heatsink (Tc=25ºC)
(Forming No. 1123)
Power Dissipation
1.8
Stand-alone without heatsink
Junction temperature
Operating temperature
Storage temperature
–40 to +150
–40 to +100
–40 to +150
TOP
Tstg
Standard Circuit Diagram
VB
5
VO
PZ
Electrical Characteristics
(Ta=25ºC unless otherwise specified)
3
SI-5152S
VCC
Ratings
typ
Parameter
Symbol
Unit
Conditions
VIN
2
DIAG
min
6.0
max
30
12
0.5
1.0
2
4
5.1kΩ
VBopr
Iq
V
mA
V
Operating power supply voltage
Quiescent circuit current
LS-TTL
or
1
5
VBopr =14V, VIN = 0 V
CMOS
IO 1.0A, VBopr =6 to 16V
IO 1.8A, VBopr =6 to 16V
Saturation voltage of output
transistor
VCE (sat)
V
GND
Truth table
IO, leak
mA
V
V
CEO =16V, VIN = 0 V
VBopr =6 to 16V
Bopr =6 to 16V
VIN = 5 V
IN = 0 V
Output leak current
VIN
H
VO
Output ON
Input voltage
VIH
2.0
VB
0.8
1
H
L
Output OFF
V
VIL
–0.3
V
L
Output ON
Input current
IIH
mA
mA
Output OFF
IIL
–0.1
V
Overcurrent protection starting
current
IS
1.9
A
VBopr = 14V, VO = VBopr–1.5V
Diagnostic Function
Thermal protection starting
temperature
TTSD
150
ºC
VBopr 6V
Normal
Open load
Shorted load
Overheat
Normal
Ropen
TON
30
30
kΩ
µs
µs
µA
V
VBopr =6 to 16V
Bopr =14V, IO = 1 A
Open load detection resistor
VIN
VO
8
V
Output transfer time
TOFF
IDIAG
VDL
15
30
VBopr =14V, IO = 1 A
100
0.3
30
VCC =6V, VBopr =6 to 16V
DIAG output leak current
V
CC
=6V, V
Bopr
=6 to 16V,
I
=2mA
DIAG
Saturation voltage of DIAG output
DO
TPLH
TPHL
L
µs
µs
mH
VBopr =14V, IO = 1 A
VBopr =14V, IO = 1 A
DIAG output transfer time
Minimum load inductance
30
VIN
VO
DIAG
Mode
1
L
H
L
L
H
H
H
L
L
H
H
H
L
Normal
Note:
Open load
Shorted load
Overheat
H
L
* The rule of protection against reverse connection of power supply is VB = –13V, one minute
(all terminals except, VB and GND, are open).
H
L
H
L
L
L
L
L
L
ꢀ DIAG output will be undetermined when a voltage
exceeding 25V is applied to VB terminal.
18
SI-5152S
Electrical Characteristics
Quiescent Circuit Current
10
Circuit Current
40
Saturation Voltage of Output Transistor
1.0
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
T
a
= –40ºC
30
20
VB
=
6 to 16V
T
= 25ºC
= 95ºC
a
–40ºC
95ºC
25ºC
95ºC
5
0.5
T
a
–40ºC
10
0
25ºC
0
0
0
10
20
30
40
0
10
20
30
40
50
0
1
2
3
VB (V)
V
B (V)
IO (A)
Overcurrent Protection Characteristics (Ta =–40ºC)
Overcurrent Protection Characteristics (Ta=25ºC)
Overcurrent Protection Characteristics (Ta=100ºC)
16
16
16
14
14
14
VB=
14V
VB=
14V
VB=
14V
12
12
10
12
10
8
10
8
6
4
2
0
8
6
4
2
6
4
2
0
0
0
1
2
3
0
1
2
3
0
1
2
3
IO (A)
I
O (A)
IO (A)
Threshold input voltage
20
Input Current (Output ON)
1.0
Input Current (Output OFF)
2
=
VIN 0V
=
VIN 5V
T
=
a
=
VB 14V
=
VB 14V
95ºC
25ºC –40ºC
15
V
B = 16V
IO = 1A
1
0
10
5
0.5
0
–40
0
0
50
100
–40
0
50
100
0
1
2
2.2
VIN (V)
Ta (ºC)
Ta (ºC)
Saturation Voltage of DIAG Output
0.2
=
VB 14V
0.1
0
–40
0
50
100
Ta (ºC)
19
High-side Power Switch ICs [With Diagnostic Function] SI-5155S
(unit: mm)
External Dimensions
Features
ꢀ Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
4.2±0.2
3.2±0.2
10 ±0.2
2.8 ±0.2
ꢀ Low saturation PNP transistor use
ꢀ Allows direct driving using LS-TTL and C-MOS logic levels
ꢀ Built-in overcurrent and thermal protection circuits
ꢀ Built-in protection against reverse connection of power supply
ꢀ Tj = 150ºC guaranteed
2.6±0.1
a
b
ꢀ TO220 equivalent full-mold package not require insulation mica
0.94±0.15
R-end
Absolute Maximum Ratings
(Ta=25ºC)
Parameter
Power supply voltage
Input terminal voltage
DIAG terminal voltage
Collector-emitter voltage
Output current
Symbol
Ratings
Unit
Conditions
+0.2
+0.2
–0.1
0.45
–0.1
0.85
VB
VIN
–13 to +40
V
V
P1.7±0.1 • 4 = 6.8
4 ±0.6
–0.3 to VB
VDIAG
VCE
IO
6
40
V
1. GND
a: Part No.
b: Lot No.
2. VIN
3. VO
V
4. DIAG
5. VB
2.5
A
PD1
PD2
Tj
22
W
W
ºC
ºC
ºC
With infinite heatsink (Tc=25ºC)
(Forming No. 1123)
Power dissipation
1.8
Stand-alone without heatsink
Junction temperature
Operating temperature
Storage temperature
–40 to +150
–40 to +100
–40 to +150
TOP
Tstg
Standard Circuit Diagram
VB
5
VO
PZ
Electrical Characteristics
(Ta=25ºC unless otherwise specified)
3
SI-5155S
VCC
Ratings
typ
VIN
2
Parameter
Symbol
Unit
Conditions
DIAG
min
6.0
max
30
4
5.1kΩ
VBopr
Iq
V
mA
V
Operating power supply voltage
Quiescent circuit current
LS-TTL
or
1
5
12
VBopr =14V, VIN = 0 V
CMOS
0.3
0.72
2
IO 1.0A, VBopr =6 to 16V
IO 2.5A, VBopr =6 to 16V
Saturation voltage of output
transistor
VCE (sat)
V
GND
Truth table
IO, leak
VIH
mA
V
VCEO =16V, VIN = 0 V
Output leak current
VIN
H
VO
H
2.0
VB
VBopr =6 to 16V
VBopr =6 to 16V
VIN = 5 V
Output ON
Input voltage
VIL
–0.3
0.8
1
V
Output OFF
L
L
IIH
mA
mA
Output ON
Input current
IIL
–0.1
VIN = 0 V
Output OFF
Overcurrent protection starting
current
IS
2.6
A
VBopr = 14V, VO = VBopr –1.5V
Diagnostic Function
Thermal protection starting
temperature
VBopr 6V
TTSD
150
ºC
Normal
Open load
Shorted load
Overheat
Normal
Ropen
TON
TOFF
VDH
30
30
30
6
kΩ
µs
µs
V
VBopr =6 to 16V
VBopr =14V, IO = 1 A
Open load detection resistor
Output transfer time
VIN
VO
8
15
V
V
V
Bopr =14V, IO = 1 A
4.5
CC =6V, VBopr =6 to 16V
DIAG output voltage
VDL
0.3
30
30
V
=6V,
V
Bopr
=6 to 16V,
I
=2mA
CC
DO
DIAG
TPLH
TPHL
L
µs
µs
mH
VBopr =14V, IO = 1 A
Bopr =14V, IO = 1 A
DIAG output transfer time
Minimum load inductance
V
1
VIN
VO
DIAG
Mode
L
H
L
L
H
H
H
L
L
H
H
H
L
Normal
Note:
Open load
H
L
* The rule of protection against reverse connection of power supply is VB= –13V, one minute
(all terminals except, VB and GND, are open).
Shorted load
Overheat
H
L
H
L
L
L
L
L
L
ꢀ DIAG output will be undetermined when a voltage
exceeding 25V is applied to VB terminal.
20
SI-5155S
Electrical Characteristics
Quiescent Circuit Current
10
Circuit Current
50
Saturation Voltage of Output Transistor
2
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
40
Ta=
–40ºC
Ta= –40ºC
25ºC
150ºC
30
20
10
25ºC
Ta=
125ºC
5
1
150ºC
25ºC
VB = 6 to 16V
–40ºC
0
0
0
0
10
20
30
40
0
1
2
3
0
10
20
30
40
VB (V)
VB (V)
IO (A)
Overcurrent Protection Characteristics (Ta= –40ºC)
Overcurrent Protection Characteristics (Ta=25ºC)
Overcurrent Protection Characteristics (Ta=125ºC)
20
20
20
VB
=
18V
VB
=
18V
VB
=
18V
16
12
16
12
16
12
14V
14V
8V
14V
8
4
0
8
4
0
8
4
0
8V
6V
8V
6V
6V
0
1
2
3
4
5
0
1
2
3
4
5
0
1
2
3
4
5
IO (A)
IO (A)
IO (A)
Threshold input voltage
20
Input Current (Output ON)
1.0
Input Current (Output OFF)
5
VB =14V
VIN = 0 V
VB =14V
VIN = 5 V
–40ºC
25ºC
Ta= 125ºC
4
3
2
1
0
0.8
0.6
0.4
15
10
5
VB =16V
IO = 1 A
0.2
0
0
0
1
2
–50
0
50
100
150
–50
0
50
100
150
VIN (th) (V)
Ta (ºC)
Ta (ºC)
Output Terminal Leak Current
2
Saturation Voltage of DIAG Output
Thermal Protection Characteristics
20
0.5
VB =14V
IDIAG =2mA
VB =14V
VDIAG = 5 V
IO =10mA
VB =14V
0.4
0.3
15
VO
10
1
0.2
0.1
0
VDIAG
5
0
–50
0
0
50
100
150
–50
0
50
100
150
0
50
100
150
200
Ta (ºC)
Ta (ºC)
Ta (ºC)
21
High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5153S
(unit: mm)
External Dimensions
Features
ꢀ Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
4.2±0.2
3.2±0.2
10 ±0.2
2.8 ±0.2
ꢀ Low saturation PNP transistor use
ꢀ Allows direct driving using LS-TTL and C-MOS logic levels
ꢀ Built-in overcurrent and thermal protection circuits
ꢀ Built-in protection against reverse connection of power supply
ꢀ Tj = 150ºC guaranteed
2.6±0.1
a
b
ꢀ Built-in Zener diode
ꢀ TO220 equivalent full-mold package not require insulation mica
0.94±0.15
R-end
Absolute Maximum Ratings
+0.2
(Ta=25ºC)
+0.2
–0.1
0.45
–0.1
0.85
Parameter
Power supply voltage
Input terminal voltage
DIAG terminal voltage
Symbol
Ratings
–13 to +40
–0.3 to VB
6
Unit
V
Conditions
P1.7±0.1 • 4 = 6.8
4 ±0.6
VB
1. GND
2. VIN
3. VO
4. DIAG
5. VB
a: Part No.
b: Lot No.
VIN
V
VDIAG
V
Refer to "Surge clamp voltage"
in Electrical Characteristics
Collector-emitter voltage
Output current
VCE
VB —VZ
V
(Forming No. 1123)
IO
PD1
PD2
Tj
2.04
22
A
W
W
ºC
ºC
ºC
With infinite heatsink (Tc=25ºC)
Power Dissipation
1.8
Stand-alone without heatsink
Standard Circuit Diagram
Junction temperature
Operating temperature
Storage temperature
–40 to +150
–40 to +100
–40 to +150
TOP
Tstg
VB
5
VO
3
SI-5153S
VCC
Electrical Characteristics
(Ta=25ºC unless otherwise specified)
VIN
2
DIAG
Ratings
typ
4
Parameter
Symbol
Unit
Conditions
5.1kΩ
min
6.0
max
30
LS-TTL
or
CMOS
1
VBopr
Iq
V
Operating power supply voltage
Quiescent circuit current
5
12
mA
VBopr =14V, VIN = 0 V
Saturation voltage of output
transistor
0.47
V
IO 2.05A, VBopr =6 to 16V
VCE (sat)
GND
Truth table
VIN
H
VO
H
IO, leak
VIH
2
VB
0.8
1
mA
V
VCEO =16V, VIN = 0 V
VBopr =6 to 16V
VBopr =6 to 16V
Output leak current
2.0
Output ON
Input voltage
L
L
VIL
–0.3
V
Output OFF
Output ON
Input current
IIH
mA
mA
VIN = 5 V
IIL
–0.1
VIN = 0 V
Output OFF
Diagnostic Function
Overcurrent protection starting
current
IS
2.05
A
VBopr = 14V, VO = VBopr –1.5V
Normal
Open load
Shorted load
Overheat
Normal
Thermal protection starting
temperature
TTSD
150
ºC
VBopr 6V
VBopr =6 to 16V
VIN
VO
Ropen
TON
TOFF
VDH
VDL
30
30
30
6
kΩ
µs
µs
V
Open load detection resistor
8
V
Bopr =14V, IO = 1 A
Bopr =14V, IO = 1 A
Output transfer time
15
V
DIAG
4.5
VCC =6V, VBopr =6 to 16V
DIAG output voltage
0.3
30
30
V
V
CC
=6V,
V
Bopr
=6 to 16V,
I
=2mA
DO
TPLH
TPHL
L
µs
µs
mH
V
VBopr =14V, IO = 1 A
VBopr =14V, IO = 1 A
VIN
VO
DIAG
DIAG output transfer time
Mode
L
H
L
L
H
H
H
L
L
H
H
H
L
Normal
Minimum load inductance
1
Open load
H
L
1
Surge clamp voltage
*
VZ
28
34
40
IC =5mA
Shorted load
Overheat
H
L
H
L
L
L
L
Note:
L
L
*1. The Zener diode for surge clamping has an energy capability of 140 mJ (single pulse).
* The rule of protection against reverse connection of power supply is VB = –13V, one minute.
* This driver is exclusively used for ON/OFF control.
ꢀ DIAG output will be undetermined when a voltage
exceeding 25V is applied to VB terminal.
22
SI-5153S
Electrical Characteristics
Quiescent Circuit Current
10
Circuit Current
50
Saturation Voltage of Output Transistor
2
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
40
Ta=
–40ºC
Ta=
30
20
10
125ºC
Ta=–40ºC
25ºC
5
1
25ºC
150ºC
VB = 6 to 16V
25ºC
150ºC
–40ºC
0
0
0
0
10
20
30
40
0
1
2
3
0
10
20
30
40
VB (V)
VB (V)
IO (A)
Overcurrent Protection Characteristics (Ta=–40ºC)
Overcurrent Protection Characteristics (Ta=25ºC)
Overcurrent Protection Characteristics (Ta=125ºC)
20
20
20
VB
=
VB
=
18V
VB
=
18V
18V
15
10
5
15
10
5
15
10
5
14V
14V
14V
8V
8V
8V
0
0
0
0
1
2
3
4
5
0
1
2
3
4
5
0
1
2
3
4
5
IO (A)
IO (A)
IO (A)
Threshold Characteristics of Input Voltage
20
Input Current (Output ON)
1.0
Input Current (Output OFF)
5
VB =14V
VIN = 0 V
VB =14V
VIN = 5 V
–40ºC
25ºC
Ta= 150ºC
4
3
2
1
0
0.8
0.6
0.4
15
10
5
VB =16V
O = 1 A
I
0.2
0
0
0
1
2
–50
0
50
100
150
–50
0
50
100
150
VIN (th) (V)
Ta (ºC)
Ta (ºC)
Output Terminal Leak Current
2
Saturation Voltage of DIAG Output
Thermal Protection Characteristics
0.5
20
VB =14V
VB =14V
IDIAG =2mA
VB =14V
V
DIAG = 5 V
I
O =10mA
0.4
0.3
15
10
VO
1
0.2
0.1
0
VDIAG
5
0
0
–50
0
50
100
150
–50
0
50
100
150
0
50
100
150
200
Ta (ºC)
Ta (ºC)
Ta (ºC)
23
High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5154S
(unit: mm)
External Dimensions
Features
ꢀ Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
4.2±0.2
3.2±0.2
10 ±0.2
2.8 ±0.2
ꢀ Low saturation PNP transistor use
ꢀ Allows direct driving using LS-TTL and C-MOS logic levels
ꢀ Built-in overcurrent and thermal protection circuits
ꢀ Built-in protection against reverse connection of power supply
ꢀ Tj = 150ºC guaranteed
2.6±0.1
ꢀ Built-in Zener diode
ꢀ TO220 equivalent full-mold package not require insulation mica
a
b
0.94±0.15
R-end
Absolute Maximum Ratings
(Ta=25ºC)
Conditions
+0.2
+0.2
Parameter
Power supply voltage
Input terminal voltage
DIAG terminal voltage
Symbol
Ratings
–13 to +40
–0.3 to VB
6
Unit
V
–0.1
0.45
–0.1
0.85
P1.7±0.1 • 4 = 6.8
4 ±0.6
VB
VIN
V
1. GND
a: Part No.
b: Lot No.
VDIAG
V
2. VIN
3. VO
Refer to "Surge clamp voltage" in
Electrical Characteristics
4. DIAG
5. VB
Collector-emitter voltage
Output current
VCE
VB –VZ
V
IO
PD1
PD2
Tj
2.5
22
A
(Forming No. 1123)
W
W
ºC
ºC
ºC
With infinite heatsink (Tc=25ºC)
Power Dissipation
1.8
Stand-alone without heatsink
Junction temperature
Operating temperature
Storage temperature
–40 to +150
–40 to +100
–40 to +150
Standard Circuit Diagram
TOP
Tstg
VB
5
VO
3
Electrical Characteristics
SI-5154S
(Ta=25ºC unless otherwise specified)
VCC
VIN
2
Ratings
typ
DIAG
Parameter
Symbol
Unit
Conditions
min
6.0
max
30
4
5.1kΩ
LS-TTL
or
VBopr
Iq
V
mA
V
Operating power supply voltage
Quiescent circuit current
1
CMOS
5
12
VBopr =14V, VIN = 0 V
0.3
0.72
2
IO 1.0A, VBopr =6 to 16V
IO 2.5A, VBopr =6 to 16V
Saturation voltage of output
transistor
VCE (sat)
V
GND
Truth table
VIN
H
VO
H
IO, leak
VIH
mA
V
V
CEO =16V, VIN = 0 V
Bopr =6 to 16V
Output leak current
2.0
VB
V
Output ON
Input voltage
L
L
VBopr =6 to 16V
VIN = 5 V
VIL
–0.3
0.8
1
V
Output OFF
IIH
mA
mA
Output ON
Input current
IIL
–0.1
VIN = 0 V
Output OFF
Overcurrent protection starting
current
IS
2.6
A
VBopr = 14V, VO = VBopr –1.5V
Diagnostic Function
Thermal protection starting
temperature
TTSD
150
ºC
VBopr 6V
VBopr =6 to 16V
Normal
Open load
Shorted load
Overheat
Normal
Ropen
TON
TOFF
VDH
VDL
30
30
30
6
kΩ
µs
µs
V
Open load detection resistor
VIN
VO
8
VBopr =14V, IO = 1 A
VBopr =14V, IO = 1 A
Output transfer time
15
4.5
VCC =6V, VBopr =6 to 16V
DIAG output voltage
DIAG
0.3
30
30
V
V
CC
=6V,
V
Bopr
=6 to 16V,
I
=2mA
DO
TPLH
TPHL
L
µs
µs
mH
V
VBopr =14V, IO = 1 A
VBopr =14V, IO = 1 A
DIAG output transfer time
VIN
VO
DIAG
Mode
L
H
L
L
H
H
H
L
L
H
H
H
L
Minimum load inductance
1
Normal
1
Surge clamp voltage
*
VZ
28
34
40
IC =5mA
Open load
Shorted load
Overheat
H
L
Note:
H
L
L
L
L
L
*1. The Zener diode for surge clamping has an energy capability of 200 mJ (single pulse).
* The rule of protection against reverse connection of power supply is VB = –13V, one minute.
* This driver is exclusively used for ON/OFF control.
H
L
L
ꢀ DIAG output will be undetermined when a voltage
exceeding 25V is applied to VB terminal.
24
SI-5154S
Electrical Characteristics
Quiescent Circuit Current
10
Circuit Current
50
Saturation Voltage of Output Transistor
2
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
40
Ta=
–40ºC
Ta= –40ºC
25ºC
150ºC
30
20
10
25ºC
Ta=
125ºC
5
1
150ºC
25ºC
VB = 6 to 16V
–40ºC
0
0
0
0
10
20
30
40
0
1
2
3
0
10
20
30
40
VB (V)
VB (V)
IO (A)
Overcurrent Protection Characteristics (Ta= –40ºC)
Overcurrent Protection Characteristics (Ta=25ºC)
Overcurrent Protection Characteristics (Ta=125ºC)
20
20
20
VB
=
18V
VB
=
18V
VB
=
18V
16
12
16
12
16
12
14V
14V
8V
14V
8
4
0
8
4
0
8
4
0
8V
6V
8V
6V
6V
0
1
2
3
4
5
0
1
2
3
4
5
0
1
2
3
4
5
IO (A)
IO (A)
IO (A)
Threshold input voltage
20
Input Current (Output ON)
1.0
Input Current (Output OFF)
5
VB =14V
VIN = 0 V
VB =14V
VIN = 5 V
–40ºC
25ºC
Ta= 125ºC
4
3
2
1
0
0.8
0.6
0.4
15
10
5
VB =16V
O = 1 A
I
0.2
0
0
–50
0
50
100
150
–50
0
50
100
150
0
1
2
VIN (th) (V)
Ta (ºC)
Ta (ºC)
Output Terminal Leak Current
2
Saturation Voltage of DIAG Output
Thermal Protection Characteristics
20
0.5
VB =14V
IDIAG =2mA
VB =14V
VDIAG = 5 V
IO =10mA
VB =14V
0.4
0.3
15
VO
10
1
0.2
0.1
0
VDIAG
5
0
–50
0
0
50
100
150
–50
0
50
100
150
0
50
100
150
200
Ta (ºC)
Ta (ºC)
Ta (ºC)
25
High-side Power Switch ICs [Surface-mount 2-circuits] SDH04
(unit: mm)
SMD-16A
External Dimensions
Features
ꢀ Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
ꢀ Low saturation PNP transistor use
2.54±0.25
0.89 ±0.15
0.75 +–00..0155
0.25
ꢀ Allows direct driving using LS-TTL and C-MOS logic levels
ꢀ Built-in overcurrent protection circuits
ꢀ Built-in protection against reverse connection of power supply
ꢀ Tj = 150ºC guaranteed
16
9
a
b
ꢀ Surface-mount full-mold package
+0.15
Pin 1
8
–0.05
0.3
20.0max
Absolute Maximum Ratings
19.56±0.2
(Ta=25ºC)
Parameter
Symbol
Ratings
–13 to +40
–0.3 to VB
–0.3 to +7.0
–0.3 to +7.0
3
Unit
V
Conditions
Power supply voltage
VB
Drive terminal applied voltage
Input terminal voltage
VD
V
VIN
V
DIAG output applied voltage
DIAG output source current
VDIAG
IDIAG
V
a: Part No.
b: Lot No.
mA
Voltage across power supply
and drive terminal
VB–D
VB –0.4
V
Equivalent Circuit Diagram
Output current
IO
PD
1.5
2.6
A
Power dissipation
Junction temperature
Operating temperature
Storage temperature
W
ºC
ºC
ºC
Without heatsink, all circuits operating
The MIC is bound by the dotted lines.
9,12,16
2
VB
*
Tj
–40 to +150
–40 to +100
–40 to +150
Pre. Reg.
TOP
Tstg
2
Drive
IN1
CONT.
11kΩ typ.
3
O.C.P
DIAG1
DIAG DET.
1,15
14
2
Out1
*
1
Electrical Characteristics
(VBopr=14V, Ta=25ºC unless otherwise specified)
D1
T.S.D
*
Ratings
Parameter
Symbol
Unit
Conditions
min
6.0
typ
max
16
7
6
Drive
IN2
CONT.
11kΩ typ.
VBopr
Iq
V
Operating power supply voltage
Quiescent circuit current
Threshold input voltage
O.C.P
DIAG2
DIAG DET.
5
12
mA
V
Lo output
8,10
11
2
Out2
*
1
D2
VINth
IIN
0.8
0
3.0
1.0
100
*
4,5,13
2
*
mA
µA
VIN = 5 V
IN = 0 V
Hi output
Input current
GND
[Abbreviations]
IIN
V
Lo output
Drive: Drive circuit
DIAG.DET.: Diagnostic circuit
CONT: ON/OFF circuit
Pre.Reg: Pre-regulator
O.C.P.: Overcurrent protection
T.S.D.: Thermal protection
Saturation voltage of output
transistor
VCE (sat)
0.5
V
IO 1.0A, VBopr =6 to 16V
*1. The base terminal (D terminal) is connected to the output
transistor base. It is also connected to the control monolithic
IC. Do not, therefore, apply an external voltage in operation.
Output terminal sink current
Saturation voltage of DIAG output
Leak current of DIAG output
Open load detection resistor
IO (off)
VDL
2.0
0.3
100
30
mA
V
VO =0V, VIN = 0 V
IDIAG =3mA
*2. SDH04 have two or three terminals of the same function (VB
,
IDGH
µA
kΩ
VDIAG = 5 V
Out1, Out2, GND). The terminals of the same function must be
shorted at a pattern near the product.
Ropen
1
Overcurrent protection starting
current
IS
1.6
A
VO = V Bopr –1.9V
TON
TOFF
TPLH
TPHL
8
15
10
15
30
30
30
30
µs
µs
µs
µs
I
O = 1 A
IO = 1 A
O = 1 A
IO = 1 A
Standard Circuit Diagram
Output transfer time
I
DIAG output transfer time
VB
PZ
Note: * The rule of protection against reverse connection of power supply is VB = –13V, one minute
D1
(all terminals except, VB and GND, are open).
Out
SDH04
VCC
IN
Diagnostic Function
DIAG
5.1kΩ
VB
GND
3.0V
0.8V
VIN
Truth table
GND
VIN
H
VO
H
GND
VOUT
GND
SHORT
OVER
L
L
Is
TSD
VOLTAGE
OPEN OPEN
Note 1: A pull-down resistor (11 kΩ typ.) is connected to the IN terminal.
VOUT turns "L" when a high impedance is connected to the IN terminal in
series.
IO
VDIAG
GND
Normal
Shorted load
Open load
Overvoltage
Overheat
ERROR SIGNAL for CPU
26
SDH04
Electrical Characteristics
Quiescent Circuit Current (dual circuit)
Circuit Current (single circuit)
Circuit Current (dual circuit)
100
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
V
IN = 5V
VIN = 5V
V
IN = 0V
20
10
0
50
Ta=
–40ºC
Ta= –40ºC
25ºC
125ºC
Ta=
40
80
60
40
20
–40ºC
25ºC
30
25ºC
125ºC
20
125ºC
V
IN = 0V
10
VO shorted
VO open
V
IN = 0V
0
0
0
10
20
30
40 46
0
10
20
30
40 46
0
10
20
30
40 46
VB (V)
VB (V)
VB (V)
Saturation Voltage of Output Transistor
Overcurrent Protection Characteristics (Ta=–40ºC)
Overcurrent Protection Characteristics (Ta=25ºC)
1.5
20
20
Ta=
125ºC
VB= 16V
VB= 6V
VB =
VB
=
18V
18V
15
10
5
15
10
5
1.0
0.5
14V
14V
25ºC
–40ºC
6V
6V
0
0
0
0
1
2
3
4
0
1
2
3
0
1
2
3
4
IO (A)
IO (A)
IO (A)
Overcurrent Protection Characteristics (Ta=125ºC)
Threshold Characteristics of Input Voltage
Input Terminal Source Current
1.0
V
B = 14V IO = 1A
V
B = 14V
20
15
10
5
25ºC
–40ºC
Ta= 125ºC
VB
=
18V
0.8
0.6
0.4
0.2
15
10
5
14V
6V
Ta= 125ºC
25ºC
–40ºC
0
0
0
0
1
2
3
4
0
1
2
3
0
2
4
6
8
10
IO (A)
VIN (V)
VIN (V)
Input Terminal Sink Current
Saturation Voltage of DIAG Output
0.3
V
B =14V VIN= 0 V
1.0
0.5
0
V
B = 14V
I
DIAG = 3mA
0.2
0.1
0
–50
0
50
100
150
–50
0
50
100
150
Ta (ºC)
Ta (ºC)
27
High-side Power Switch ICs [Surface-mount 2-circuits] SPF5003(under development)
(unit: mm)
External Dimensions
Features
ꢀ Built-in diagnostic function to detect short and open circuiting of loads and
12.2±0.2
output status signals
ꢀ DMOS 2ch output
ꢀ Allows ON/OFF using C-MOS logic level
ꢀ Built-in overcurrent and thermal protection circuits
+0.1
–0.05
10.5±0.2
1.0
Fin
16
9
thickness
Absolute Maximum Ratings
(Ta=25ºC)
Conditions
1
8
Parameter
Power supply voltage
Input terminal voltage
Input terminal current
DG terminal voltage
DG terminal current
Drain to source voltage
Output current
Symbol
Ratings
Unit
V
+0.15
–0.05
1.27±0.25
0.4
VB
35
+0.15
–0.05
VIN
–0.3 to 7
V
0.25
IIN
5
–0.3 to 7
5
mA
V
VDG
IDG
mA
V
VDS
IO
V
B–45
1.8
2
A
Block Diagram (for one channel)
V
B
Power dissipation
PD
W
A
Ta=25ºC
Source to drain Di forward current
Channel temperature
Operating temperature
Storage temperature
IF
0.8
Thermal
Bias
Protect
Clamp
Tch
TOP
Tstg
150
ºC
ºC
ºC
Input
Logic
Lavel
Shifting
Charge Current
IN
Pump
Limit
–40 to +105
–40 to +150
Chopper
DG
DG
Logic
Open/Short
Sense
Electrical Characteristics
(VB=14V, Ta=25ºC unless otherwise specified)
Ratings
typ
Parameter
Symbol
Unit
Conditions
min
5.5
max
35
GND
OUT
VB (opr)
Iq
V
mA
mΩ
mΩ
µA
V
Operating power supply voltage
Quiescent circuit current
1
VIN=0V, VOUT=0V
200
300
100
3.0
I
O=1A
O=1A, Ta=80ºC
OUT=0V
Output ON resistance
Output leak current
RDS (ON)
Standard Connection Diagram
I
I
O, leak
VIHth
VILth
IIH
50
2.0
1.8
70
V
1.4
1.0
Ta= –40 to +105ºC
Ta= –40 to +105ºC
Output ON
Input threshold
voltage
7,8
OUT1
OUT2
V
Output OFF
15,16
200
12
µA
µA
A
V
IN=5V
Output ON
V
B
1
5V
5V
Inpup current
DG1
SPF5003
(2, 3)
9
IIL
VIN=0V
Output OFF
Overcurrent protection starting current
Internal current limit
6
DG2
(10,11)
IS
1.9
3
5
V
OUT=VO–1.5V
14
Vin 1
(7V max)
Vin 2
5 (7V
13
4
12
GND
ILim
A
V
OUT=0V
max)
R
IN
IN
Thermal shutdown operating temperature
Load open detection threshold voltage
TTSD
155
1.5
165
3
ºC
V
C
P
U
R
Vopen
TON
4.5
140
90
1
70
35
µs
µs
µA
V
RL=14Ω, VO=–5V
RL=14Ω, VO •10%
*
R
and RDG are needed to protect CPU and SPF5003 in case of reverse
IN
Output transfer time
*
*
connection of V terminal.
B
TOFF
IDG
Make V of 1Pin and 9Pin short from the fin to be plated by solder.
B
20
VDG=5.5V
DG leak current
VDGL
TPLH
TPHL
0.15
70
0.5
140
120
IDG=1.6mA
Low level DG output voltage
Timing Chart
1
µs
µs
*
DG output transfer time
V
IN ON
V
IN OFF
V
O open
Normal OCP
Normal
Normal
Normal
TSD
45
Normal
Open load
Shorted load
Over-
heat
V
B
Note: 1. Transient time is showed Wave Form below.
*
V
IN
V
OUT
Internal current limit
Recommended Operating Conditions (for one channel)
Wave Form
TSDON
I
OUT
Ratings
TSDOFF
Parameter
Unit
V
IN
min
5.5
4
max
16
DG
High inpidance
V
OUT
–5V
Power supply voltage
V
V
Output transfer time
VIH
VIL
5.5
0.9
1
V
• 10%
OUT
V
OUT
Mode
Normal
Open load
VIN
H
L
H
L
H
L
DG
VO
T
T
OFF
ON
H
L
H
H
L
L
L
L
H
L
–0.3
V
V
• 90%
DG
H
DG output transfer time
IO
A
H
V
DG
•
10%
V
DG
L (Limiting)
T
PLH
T
PHL
RIN
RDG
10
10
20
kΩ
kΩ
Shorted load
Overheat
L
L
L
H
L
20
28
29
High-side Power Switch ICs [Surface-mount 2-circuits] SPF5004(under development)
(unit: mm)
External Dimensions
Features
ꢀ Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
ꢀ DMOS 2ch output
17.28±0.2
+0.1
–0.05
15.58±0.2
1.0
Fin
24
13
thickness
ꢀ Allows ON/OFF using C-MOS logic level
ꢀ Built-in overcurrent and thermal protection circuits
a
b
Absolute Maximum Ratings
(Ta=25ºC)
1
12
Parameter
Power supply voltage
Input terminal voltage
Input terminal current
DG terminal voltage
DG terminal current
Drain to source voltage
Output current
Symbol
Ratings
Unit
V
Conditions
+0.15
–0.05
0.4
1.27±0.25
VB
35
+0.15
–0.05
0.25
VIN
–0.3 to 7
V
IIN
5
–0.3 to 7
5
mA
V
a: Part No.
b: Lot No.
VDG
IDG
mA
V
VDS
IO
VB–45
2.5
A
Block Diagram (for one channel)
V
B
Power dissipation
PD
2.7
W
A
Ta=25ºC
Source to drain Di forward current
Channel temperature
Operating temperature
Storage temperature
IF
0.8
Thermal
Bias
Protect
Clamp
Tch
TOP
Tstg
150
ºC
ºC
ºC
Input
Logic
Lavel
Shifting
Charge
Pump
Current
Limit
IN
–40 to +105
–40 to +150
Chopper
DG
DG
Logic
Open/Short
Sense
Electrical Characteristics
(VB=14V, Ta=25ºC unless otherwise specified)
Ratings
typ
Parameter
Symbol
Unit
Conditions
min
5.5
max
35
GND
OUT
VB (opr)
Iq
V
mA
mΩ
mΩ
µA
V
Operating power supply voltage
Quiescent circuit current
1
VIN=0V, VOUT=0V
150
250
I
O=2A
O=1A, Ta=80ºC
Output ON resistance
RDS (ON)
Standard Connection Diagram
I
IO, leak
VIH
50
2.0
1.8
70
VOUT=0V
Output leak current
3.0
Ta= –40 to +105ºC
Ta= –40 to +105ºC
Output ON
Input voltage
2,3
OUT1
OUT2
VIL
1.0
2.6
V
Output OFF
14,15
IIH
µA
A
V
IN=5V
VOUT=VO–1.5V
OUT=0V
Output ON
Inpup current
V
B
1
5V
5V
DG1
SPF5004
(4,5,6)
13
IS
Overcurrent protection starting current
Internal current limit
24
DG2
ILim
10
165
3
A
V
(16,17,18)
12
23
11
21
9
GND
Vin 1
(7V max)
Vin 2
(7V max)
Thermal shutdown operating temperature
Load open detection threshold voltage
TTSD
Vopen
TON
TOFF
IDG
155
ºC
V
R
R
IN
IN
C
P
U
165
60
µs
µs
µA
V
Output transfer time
Make V of 4Pin, 5Pin, 6Pin, 16Pin, 17Pin and 18Pin short from the fin
B
to be plated by solder.
*
20
VDG=5.5V
DG leak current
VDGL
TPLH
TPHL
0.15
70
IDG=1.6mA
Low level DG output voltage
µs
µs
DG output transfer time
Timing Chart
45
V
IN ON
V
IN OFF
V
O
open
Open load
Normal OCP
Normal
Normal
Normal
TSD
Normal
Shorted load
Over-
heat
V
B
V
IN
Recommended Operating Conditions (for one channel)
V
OUT
Internal current limit
Ratings
Parameter
Unit
TSDON
min
5.5
4
max
16
I
OUT
TSDOFF
Power supply voltage
V
V
DG
High inpidance
VIH
VIL
5.5
0.9
1.15
20
–0.3
V
VIN
H
L
H
L
H
L
DG
VO
Mode
Normal
Open load
H
L
H
H
L
L
L
L
H
L
IO
A
H
RIN
RDG
10
10
kΩ
kΩ
H
L (Limiting)
20
Shorted load
Overheat
L
L
L
H
L
30
31
High-side Power Switch ICs [3-circuits] SLA2501M
(unit: mm)
External Dimensions
Features
ꢀ Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
ꢀ Low saturation PNP transistor use (V
31±0.2
Ellipse 3.2±0.15• 3.8
4.8 ±0.2
1.7 ±0.1
0.2V)
CE (sat)
24.4±0.2
3.2±0.15
ꢀ Allows direct driving using LS-TTL and C-MOS logic levels
ꢀ Built-in Zener diode in transistor eliminates the need of (or simplifies) external
surge absorption circuit
ꢀ Built-in independent overcurrent and thermal protection circuit in each circuit
ꢀ Built-in protection against reverse connection of power supply
ꢀ Tj = 150ºC guaranteed
2.45 ±0.2
a
b
+0.2
–0.1
+0.2
–0.1
0.55
+0.2
1.15
–0.1
0.65
14 •P2.03±0.1= (28.42)
Absolute Maximum Ratings
(Ta=25ºC)
Conditions
31.3±0.2
Parameter
Symbol
Ratings
–13 to +40
–0.3 to VB
–0.3 to +7.0
–0.3 to +7.0
–3
Unit
V
a: Part No.
b: Lot No.
Power supply voltage
VB
Drive terminal applied voltage
Input terminal voltage
VD
V
1
2 3
15
VIN
V
DIAG output applied voltage
DIAG output source current
VDIAG
IDIAG
V
mA
Voltage across power supply
and output terminal
VB–O
VB–34
–0.4
V
V
Equivalent Circuit Diagram
Voltage across power supply
and drive terminal
VB–D
VB
Output current
IO
IO
1.5
–1.8
±250
A
A
V
a
b
d
g
Output reverse current
Electrostatic resistance
Power Dissipation
VIN
ES/A
C=200pF, R= 0 Ω
c
f
e
Stand-alone without heatsink,
all circuits operating
PD
4.8
W
OUT
D
Junction temperature
Operating temperature
Storage temperature
Tj
–40 to +150
–40 to +115
–50 to +150
ºC
ºC
ºC
TOP
Tstg
MIC
GND
FLT
a: Pre-regulator
e: Overcurrent protection circuit
f: Diagnostic circuit
b: Overvoltage protection circuit
c: Control circuit
Electrical Characteristics
g: Thermal protection circuit
(VBopr=14V, Tj= –40 to +150ºC unless otherwise specified)
d: Driver circuit
Ratings
Parameter
Symbol
Unit
Conditions
min
6.0
typ
max
16
VBopr
Iq
V
mA
mA
V
Operating power supply voltage
Quiescent circuit current (per circuit)
Circuit current (per circuit)
Threshold input voltage
Standard Circuit Diagram
0.8
1.6
Lo output
VB
IB
19.3
Tj= 2 5 ºC
VINth
0.8
3.7
3.0
VCC
VIN
VIN
V
Hi output
Input voltage
1
VB
3
9
14
1.5
V
Lo output
D1 D2 D3
5
7
IN1
IN2
IN3
4
IIN
–1.0
mA
µA
V
V
IN = 5 V
Hi output
Input current
FLT1
FLT2
FLT3
SLA2501M
8
IIN
100
VIN = 0 V
Lo output
12
13
VCE (sat)
VCE (sat)
IO (off)
0.2
IO 1.2A, VBopr =6 to 16V
IO 1.5A, VBopr =6 to 16V
Tj= 2 5 ºC, VCEO =14V
Tj= 2 5 ºC, IC =10mA
IC =5mA
Saturation voltage of output
transistor
GND1 GND2 OUT1 OUT2 OUT3
6
11 10 15
2
1.0
2.5
34
V
5
39
mA
V
Output terminal sink current
Surge clamp voltage
29
28
VB–O
34
40
V
Saturation voltage of DIAG output
Leak current of DIAG output
Open load detection resistor
VDL
IDGH
0.4
V
IDGH = –2mA, VBopr =6 to 16V
VCC = 7 V
–100
µA
kΩ
Ropen
5.5
1.6
Diagnostic Function
Overcurrent protection starting
current
IS
A
VO = V Bopr –1.5V
Normal
Open load
Shorted load
Overheat
Normal
Thermal protection starting
temperature
VIN
TTSD
ºC
VBopr 6V
IO = 1 A
TON
TOFF
TPLH
TPHL
Lo
30
100
30
µs
µs
µs
µs
mH
%
VO
Output transfer time
I
O = 1 A
O = 1 A
VDIAG
I
DIAG output transfer time
100
IO = 1 A
Minimum load inductance
Maximum ON duty
1.0
0
D(ON)
60
Note:
* The Zener diode has an energy capability of 200 mJ (single pulse).
* A start failure may occur if a short OFF signal of 10 ms or below is input in the VIN terminal.
32
SLA2501M
Electrical Characteristics
Quiescent Circuit Current (single circuit)
5
Circuit Current (single circuit)
40
Saturation Voltage of Output Transistor
1.0
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
=
VIN 5V
=
=
VIN 5V
VIN 0V
=
T
a
–40ºC
=
VB 6 to 16V
4
=
T
a
150ºC
30
20
=
25ºC
T
–40ºC
=
a
T
25ºC
a
=
T
125ºC
–40ºC
a
=
=
T
a
3
2
=
T
a
125ºC
T
a
0.5
=
T
a
125ºC
=
T
a
25ºC
10
1
0
0
0
0
1
2
3
3.5
0
10
20
30
40
0
10
20
VB (V)
30
40
V
B
(V)
I (A)
O
Overcurrent Protection Characteristics (Ta= –40ºC)
20
Overcurrent Protection Characteristics (Ta=25ºC)
20
Overcurrent Protection Characteristics (Ta=125ºC)
20
=
=
=
VB 14V
VB 14V
VB 14V
10
10
10
0
0
0
0
1
2
3
4
0
1
2
3
4
5
0
1
2
3
4
I
O
(A)
I
O
(A)
I (A)
O
Threshold Input Voltage
20
Input Current (Output ON)
1.0
Input Current (Output OFF)
20
=
=
VB 16V IOUT 1A
=
=
=
=
VB 14V VIN 0V
VB 14V VIN 0V
=
T
a
125ºC
25ºC –40ºC
0.5
10
10
0
--50
0
–50
0
0
50
100 125
0
50
100 125
0
1
2
3
4
V
IN
(V)
Ta (ºC)
Ta (ºC)
Saturation Voltage of DIAG Output
0.3
Output Reverse Current
1.4
Thermal Protection
20
10
0
10
=
=
VB 16V IO 10mA
=
VB 14V
=
VIN 5V
1.2
1.0
VO
=
IFLT 3 (mA)
0.2
0.1
0
VFLT
=
--
40ºC
Ta
0.8
=
Ta 25ºC
5
0.6
=
Ta 125ºC
0.4
0.2
0
0
1
2
3
4
0
60
100
160
180
–50
0
50
100 125
Ta (ºC)
I
F
(A)
Ta (ºC)
33
High-side Power Switch ICs [Surface-mount 3-circuits] SPF5007(under development)
(unit: mm)
External Dimensions
Features
17.28±0.2
15.58±0.2
ꢀ Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
ꢀ DMOS 3ch output
+0.1
–0.05
1.0
Fin
thickness
24
13
ꢀ Allows ON/OFF using C-MOS logic level
ꢀ Built-in overcurrent and thermal protection circuits
a
b
Absolute Maximum Ratings
(Ta=25ºC)
1
12
+0.15
–0.05
0.4
Parameter
Power supply voltage
Input terminal voltage
Input terminal current
DG terminal voltage
DG terminal current
Drain to source voltage
Output current
Symbol
Ratings
Unit
V
Conditions
1.27±0.25
+0.15
VB
35
–0.05
0.25
VIN
–0.3 to 7
V
IIN
5
–0.3 to 7
5
mA
V
a: Part No.
b: Lot No.
VDG
IDG
mA
V
VDS
IO
VB–45
1.8
A
Block Diagram (for one channel)
V
B
Power dissipation
PD
2.7
W
A
Ta=25ºC, all circuit operating
Source to drain Di forward current
Channel temperature
Operating temperature
Storage temperature
IF
0.8
Thermal
Bias
Protect
Clamp
Tch
TOP
Tstg
150
ºC
ºC
ºC
Input
Logic
Lavel
Shifting
Charge Current
Pump
IN
Limit
–40 to +105
–40 to +150
Chopper
DG
DG
Open/Short
Sense
Electrical Characteristics
(VB=14V, Ta=25ºC unless otherwise specified)
Logic
Ratings
Parameter
Symbol
Unit
Conditions
min
5.5
typ
max
35
GND
OUT
VB (opr)
Iq
V
mA
mΩ
mΩ
µA
V
Operating power supply voltage
Quiescent circuit current
1
VIN=0V, VOUT=0V
IO=1A
O=1A, Ta=80ºC
OUT=0V
200
350
100
3.0
Output ON resistance
RDS (ON)
Standard Connection Diagram
I
IO, leak
VIHth
VILth
IIH
50
2.0
1.8
70
V
Output leak current
Output ON
1.4
1.0
Ta= –40 to +105ºC
Ta= –40 to +105ºC
Input threshold
5,6
1
voltage
OUT1
Output OFF
V
10,11
V
B
OUT2
OUT3
13
20,21
Output ON
Inpup current
200
12
µA
µA
A
V
IN=5V
IN=0V
5V
SPF5007
4
9
DG1
DG2
DG3
Output OFF
IIL
V
19
GND1 GND2 GND3
17
IN1
3
IN2
8
IN3
18
Overcurrent protection starting current
Internal current limit
IS
1.9
3
5
VOUT=VO–1.5V
OUT=0V
2
7
R
R
R
DG
DG
DG
ILim
A
V
C
P
U
Thermal shutdown operating temperature
Load open detection threshold voltage
TTSD
Vopen
TON
155
1.5
165
3
ºC
V
R
IN
IN
IN
R
4.5
140
90
R
70
35
µs
µs
µA
V
RL=14Ω, VOUT=VB–5V
R
and RDG are needed to protect CPU and SPF5007 in case of reverse
Output transfer time
IN
*
*
connection of V terminal.
B
TOFF
IDG
RL=14Ω, VB
VDG=5.5V
•10%
Make V of 1Pin and 13Pin short from the fin to be plated by solder.
B
DG leak current
20
Low level DG output voltage
VDGL
TPLH
TPHL
0.15
70
0.5
140
120
IDG=1.6mA
Timing Chart
µs
µs
DG output transfer time
V
IN ON
V
IN OFF
V
O
open
Open load
Normal OCP
Normal
Normal
Normal
TSD
45
Normal
Shorted load
Over-
heat
V
B
V
IN
V
OUT
Internal current limit
Recommended Operating Conditions (for one channel)
TSDON
I
OUT
Ratings
TSDOFF
Parameter
Unit
min
5.5
4
max
16
DG
High inpidance
Power supply voltage
V
V
VIH
VIL
5.5
0.9
1
VIN
H
L
H
L
H
L
DG
VO
Mode
Normal
Open load
H
L
H
H
L
L
L
L
H
L
–0.3
V
H
IO
A
H
L (Limiting)
RIN
RDG
10
10
20
kΩ
kΩ
Shorted load
Overheat
L
L
L
H
L
20
34
35
High-side Power Switch ICs [4-circuits] SLA2502M
(unit: mm)
External Dimensions
Features
ꢀ Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
31±0.2
Ellipse 3.2 ±0.15 • 3.8
4.8±0.2
1.7±0.1
24.4±0.2
ꢀ Low saturation PNP transistor use (V
0.5V)
CE (sat)
3.2 ±0.15
ꢀ Allows direct driving using LS-TTL and C-MOS logic levels
ꢀ Built-in overcurrent protection circuits
ꢀ Built-in protection against reverse connection of power supply
ꢀ Tj = 150ºC guaranteed
2.45±0.2
a
b
Absolute Maximum Ratings
+0.2
+0.2
+0.2
(Ta=25ºC)
–0.1
1.15
–0.1
–0.1
0.55
0.65
14 • P2.03±0.1= (28.42)
Parameter
Symbol
Ratings
–13 to +40
–0.3 to +7.0
–0.3 to +7.0
3
Unit
V
Conditions
Power supply voltage
Input terminal voltage
DIAG output applied voltage
DIAG output source current
Output current
VB
31.3±0.2
a: Part No.
b: Lot No.
VIN
V
VDIAG
IDIAG
IO
V
mA
A
1
2 3
15
1.2
Stand-alone operation without
heatsink; all circuits operating
Power Dissipation
PD
4.8
W
Junction temperature
Operating temperature
Storage temperature
Tj
–40 to +150
–40 to +100
–50 to +150
ºC
ºC
ºC
Equivalent Circuit Diagram
TOP
Tstg
SLA2502M
The MIC is bound by the dotted lines.
8
VB
Pre. Reg.
2
NI1
CONT.
11kΩ typ.
Drive
Electrical Characteristics
(VBopr =14V, Ta=25ºC unless otherwise specified)
3
O.C.P
DIAG1
DIAG DET
1
7
Out1
Out2
Ratings
typ
T.S.D
Parameter
Symbol
Unit
Conditions
min
6.0
max
16
6
5
CONT.
11kΩ typ.
Drive
NI2
VBopr
Iq
V
Operating power supply voltage
Quiescent circuit current (per circuit)
Threshold input voltage
O.C.P
DIAG2
DIAG DET
5
12
mA
V
VIN = 0 V
4
GND1
VINth
0.8
0
3.0
1.0
100
IIN
mA
µA
V
IN = 5 V
IN = 0 V
Hi output
Input current
Pre. Reg.
DIAG DET
10
11
NI3
CONT.
11kΩ typ.
Drive
IIN
V
Lo output
O.C.P
DIAG3
9
Out3
Out4
Saturation voltage of output
transistor
VCE (sat)
0.5
V
IO 1.0A, VBopr =6 to 16V
T.S.D
14
13
CONT.
11kΩ typ.
Drive
NI4
IO (off)
VDL
2.0
0.3
100
30
mA
V
VO =0V, VIN = 0 V
IDIAG =3mA
Output terminal sink current
Saturation voltage of DIAG output
Leak current of DIAG output
Open load detection resistor
O.C.P
DIAG4
DIAG DET
15
12
GND4
IDGH
µA
kΩ
VDIAG = 5 V
Ropen
[Abbreviations]
Drive: Drive circuit
CONT: ON/OFF circuit
Pre.Reg: Pre-regulator
DIAG.DET.: Diagnostic circuit
O.C.P.: Overcurrent protection
T.S.D.: Thermal protection
Overcurrent protection starting
current
IS
1.6
A
VO = V Bopr –1.9V
TON
TOFF
TPLH
TPHL
8
15
10
15
30
30
30
30
µs
µs
µs
µs
IO = 1 A
IO = 1 A
IO = 1 A
IO = 1 A
Output transfer time
Standard Circuit Diagram
DIAG output transfer time
Note: * The rule of protection against reverse connection of power supply is VB= –13V, one minute
VB
(all terminals except VB and GND should be open).
PZ
D1
Out
Diagnostic Function
SLA2502M
VCC
IN
DIAG
5.1kΩ
VB
GND
3.0V
0.8V
VIN
GND
Truth table
VIN
H
VO
GND
VOUT
GND
H
L
SHORT
OVER
L
Is
TSD
VOLTAGE
OPEN OPEN
Note 1: A pull-down resistor (11kΩ typ.) is connected to the IN
terminal. VOUT turns "L" when a high impedance is
connected to the IN terminal in series.
IO
Note 2: Grounds GND1 and GND2 are not wired internally. They
must be shorted at a pattern near the product.
VDIAG
GND
Normal
Shorted load
Open load
Overvoltage
Overheat
ERROR SIGNAL for CPU
36
SLA2502M
Electrical Characteristics
Circuit Current (single circuit)
Circuit Current (4 circuits)
200
Saturation Voltage of Output Transistor
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
(VB = 14V)
60
1.0
Ta=
VB
–40ºC
50
Ta=
150
100
50
–40ºC
25ºC
40
Ta=
25ºC
125ºC
25ºC
30
0.5
125ºC
–40ºC
125ºC
20
VIN = 0V
10
0
VIN = 0V
0
0
0
10
20
30
40 46
0
10
20
30
40 46
0
1
2
3
VB (V)
VB (V)
IO (A)
Overcurrent Protection Characteristics (Ta=–40ºC)
Overcurrent Protection Characteristics (Ta=25ºC)
Overcurrent Protection Characteristics (Ta=125ºC)
20
20
20
VB
=
VB
=
18V
VB
=
18V
18V
15
10
15
10
5
15
10
5
14V
14V
6V
14V
6V
5
0
6V
0
0
0
1
2
3
0
1
2
3
4
0
1
2
3
IO (A)
IO (A)
IO (A)
Threshold Input Voltage
20
Input Current (Output OFF)
3
Input Current (Output Hi)
0.5
VB = 14V
VB = 14V
VIN = 0V
0.4
0.3
0.2
0.1
0
Ta=
Ta=
125ºC
15
–40ºC
–40ºC
25ºC
25ºC
2
10
5
125ºC
1
0
0
0
1
2
3
0
1
2
3
4
5
6
–50
0
50
100
150
VIN (V)
Ta (ºC)
VIN (V)
Saturation Voltage of DIAG Output
Quiescent Circuit Current (dual circuit)
VIN = 0V
20
10
0
0.3
VB = 14V
IDIAG = 3mA
Ta= –40V
25V
125V
0.2
0.1
0
VO shorted
V
O open
0
10
20
30
40 46
–50
0
50
100
150
Ta (ºC)
VB (V)
37
High-side Power Switch ICs [4-circuits] SLA2502M
Thermal Protection Characteristics
15
Output Terminal Leak Current (VO =0V)
Open Load Detection Resistor
15
ꢀ
ꢀ
ꢀ
1.1
Ta=
–40ºC
1.0
25ºC
10
0.9
10
TSD
Ta=
VB = 14V
RL= 1.3kΩ
125ºC
125ºC
0.8
25ºC
5
0
5
0
0.7
–40ºC
0.6
0.5
0
50
100
150
200
5
10
15
20
25
5
10
15
20
Ta (ºC)
VB (V)
VB (V)
38
39
Low-side Switch ICs [Surface-mount 4-circuits] SPF5002A
(unit: mm)
External Dimensions
Features
ꢀ DMOS 4ch output
12.2±0.2
ꢀ Allows ON/OFF using C-MOS logic level
ꢀ Built-in overcurrent, overvoltage and thermal protection circuits
1.0+–00..015
10.5±0.2
Fin
16
9
thickness
Absolute Maximum Ratings
(Ta=25ºC)
Parameter
Symbol
Ratings
Unit
Conditions
Power supply voltage
Output terminal voltage
Input terminal voltage
Output current
VB
VOUT
VIN
40
V
V
1
8
37
+0.15
1.27±0.25
–0.05
0.4
–0.5 to +7.5
V
+0.15
–0.05
IO
1.8
A
0.25
Power Dissipation
PD
2
–40 to +150
150
W
ºC
ºC
mJ
Storage temperature
Tstg
Tch
EAV
Channel temperature
Output avalanche capability
50
Single pulse
Equivalent Circuit Diagram
V
V
1
OUT
B
Gate Protction
Reg. REF
Electrical Characteristics
(VB=14V, Ta=25ºC unless otherwise specified)
OVP
TSD
Gate Driver
Ratings
typ
Parameter
Symbol
Unit
Conditions
min
5.5
max
25
7
OCP
Power supply voltage
Quiescent circuit current
Operating circuit current
VBopr
Iq
V
P-GND
V
1
IN
5
8
mA
mA
VIN =0V (all inputs)
VIN =5V (all inputs)
IO = 1 A
250kΩ typ
ICC
12
Hi output
VIN
VIN
IIN
3.5
5.5
1.5
50
V
V
V
V
V
2
3
4
V
V
V
2
3
4
IN
IN
IN
OUT
OUT
OUT
Input voltage
Input current
Lo output
Hi output
Lo output
–0.5
µA
µA
Ω
V
IN = 5 V
IN = 0 V
IIN
30
V
0.4
0.5
50
0.6
0.7
55
RDS (ON)
VOUT
Output ON resistance
L-GND
Ω
VB =5.5V
IO = 1 A
Output clamp voltage
Output leak current
41
V
(
clamp
)
IOH
VF
10
µA
VO =37V
Forward voltage of output stage
diode
1.6
40
V
V
IF =0.5A
Circuit Example
Overvoltage protection starting
voltage
VB (ovp)
TTSD
IS
25
151
1.1
V
CC
Thermal protection starting
temperature
165
ºC
A
2
15
10
7
5
OUT1 OUT3 OUT2 OUT4
V
B
Overcurrent protection starting
current
4
6
IN1
IN2
IN3
IN4
12
14
SPF5002A
TON
TOFF
Tr
12
8
µs
µs
µs
µs
R
L = 1 4 Ω, IO = 1 A
L = 1 4 Ω, IO = 1 A
Output transfer time
R
L-GND
13
P-GND
1,9
CONTROL
UNIT
Output rise time
Output fall time
5
RL = 1 4 Ω, IO = 1 A
RL = 1 4 Ω, IO = 1 A
Tf
10
Use L-GND and P-GND being connected.
Truth table
VIN
H
VO
L
L
H
Timing Chart
OVP
VB
VOUT
VIN
Normal
Overvoltage
Overheat
Overcurrent
* Self-excited frequency is used in the overcurrent protection.
40
SPF5002A
Electrical Characteristics
Quiescent Circuit Current
10
Circuit Current (single circuit)
10
Circuit Current (4 circuits)
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
10
Ta = 25ºC
8
8
8
Ta = 25ºC
Ta = –40ºC
Ta= 2 5 ºC
Ta= –40ºC
Ta = –40ºC
6
4
2
0
6
4
2
0
6
Ta = 125ºC
4
2
0
Ta = 125ºC
Ta=120ºC
0
10
20
30
40
0
10
20
30
40
10
20
30
40
VB (V)
VB (V)
VB (V)
Output ON Voltage
1.0
Forward Voltage of Output Stage Diode
1.5
Threshold Input Voltage
15
ꢀ
VB =14V
Ta=125ºC
Ta= 2 5 ºC
0.8
Ta= –40ºC
Ta= 2 5 ºC
Ta=125ºC
Ta= –40ºC
10
1.0
0.6
0.4
0.2
0
Ta=125ºC
Ta= 2 5 ºC
0.5
0
5
V
O= 14V
I
O= 0.1A
Ta= –40ºC
0
0
1
2
3
0
0.5
1.0
1.5
2.0
0
0.5
1.0
1.5
VIN (th) (V)
IO (A)
VF (V)
Overcurrent Protection Characteristics
Overvoltage Protection Starting Voltage
15
15
I
O= 0.1A
VB =14V
Ta= –40ºC
Ta= 2 5 ºC
Ta= 1 2 5 ºC
10
5
10
5
Ta=120ºC
Ta= 2 5 ºC
Ta= –40ºC
0
0
0
1.0
2.0
0
10
20
30
40
IO (A)
VB (V)
41
Low-side Switch ICs [Surface-mount 4-circuits] SPF5009(under development)
(unit: mm)
External Dimensions
Features
ꢀ DMOS 4ch output
ꢀ Allows ON/OFF using C-MOS logic level
ꢀ Built-in over current and thermal protection circuit and diagnostic function to
detect open load
17.28±0.2
15.58±0.2
+0.1
–0.05
1.0
Fin
thickness
24
13
ꢀ Built-in output status signals (over current, over heat and open load)
a
b
Absolute Maximum Ratings
(Ta=25ºC)
1
12
Parameter
Symbol
Ratings
Unit
V
Conditions
+0.15
–0.05
0.4
1.27±0.25
Power supply voltage
Output terminal voltage (DC)
Output terminal voltage (pulse)
Output current (DC)
VB
40
+0.15
–0.05
0.25
VOUT
VOUT
IOUT
50
V
Output clamping (max 70V)
V
a: Part No.
b: Lot No.
±2.9
A
Output current (pulse)
Input terminal voltage
Diag output source current
Diag output voltage
IOUT
Over current protection starting current
A
Equivalent Circuit Diagram
V( IN,
–0.5 to +6.5
V
SEL, B/U)
VDIAG
IDIAG
PD
6.5
V
VB
(7)
Gate Protection
VOUT1
(4)
5
2.8
mA
W
ºC
ºC
mJ
Ref
Reg
Gate driver
Power Dissipation
VINB/U
(17)
Storage temperature
Tstg
Tch
EAV
–40 to +150
150
TSD
VOUT
SENSE
VINSEL
(5)
Channel temperature
Output avalanche capability
OUT
Set
OCP
80
Single pulse
Latch
P-GND1
(1, 2)
Reset
VIN1
(6)
OSC
VDIAG1
(3)
Monitor
VOUT2
(9)
Electrical Characteristics
VIN2
(8)
(VB =14V, Ta= 25ºC unless otherwise specified)
P-GND2
(11, 12)
Ratings
typ
VDIAG2
(10)
Parameter
Symbol
Unit
Conditions
min
5.5
max
40
VOUT3
(16)
VB (opr)
Iq
V
mA
mA
V
Power supply voltage
Quiescent circuit current
Operating circuit current
VIN3
(18)
P-GND3
(13, 14)
9
12
VB=14V
,
,
,
VIN=0V
VDIAG3
(15)
Id
12
15
V
B=14V
B=14V
VIN=5V (all inputs)
VO=1A
VOUT4
(21)
VIN (H)
VIN (L)
IIN (H)
IIN (L)
RDS (ON)
3.5
6.5
1.5
200
30
V
Input voltage
VIN4
(20)
P-GND4
(23, 24)
(1 to 4, SEL, B/U)
–0.5
V
VB=14V
B=14V
VDIAG4
(22)
µA
µA
Ω
V
,
,
,
,
,
VIN=5V
VIN=0V
IO=1A
Input current (single circuit)
(1 to 4, SEL, B/U)
L-GND
(19)
VB=14V
VB=14V
VB=14V
VB=14V
IF=1A
0.18
70
Output ON resistance
VOUT
60
65
V
IO=1A
Output clamp voltage
(clamp)
IOH
VF
50
µA
V
VO=50V
Output leak current
Circuit Example
1.5
2
Forward voltage of output stage diode
Output moniter threshold voltage
VthM
V
VB=14V
VDIAG (H)
VDIAG (L)
IDH
6.4
6.5
0.5
10
V
VB=14V
,
,
,
VDIAG=6.5V
IDIAG=5mA
VDIAG=6.5V
7
4
9
16
21
DIAG output voltage
V
B
OUT1
OUT2
OUT3
OUT4
V
V
B=14V
B=14V
6
8
V
V
V
V
V
V
1
2
3
4
IN
IN
IN
IN
IN
IN
3
DIAG1
DIAG2
µA
ºC
A
V
DIAG output leak current
18
20
17
5
10
15
22
SPF5009
DIAG3
DIAG4
TTSD
IS
151
3.0
165
VB=14V
B=14V
Thermal shutdown operating temperature
Overcurrent protection starting current
B/U
SEL
LG
19
V
PG1
PG2
11, 12
PG3
PG4
23, 24
TON
12
8
µs
µs
µs
µs
µs
µs
VB=14V
,
,
,
,
,
,
RL=14Ω, IO=1A
RL=14Ω, IO=1A
RL=14Ω, IO=1A
RL=14Ω, IO=1A
RL=14Ω, IO=1A
RL=14Ω, IO=1A
1, 2
13, 14
Output transfer time
TOFF
VB=14V
T
r
5
VB=14V
Output rise time
Output fall time
T
f
10
12
8
VB=14V
VB=14V
VB=14V
tDON
Timing Chart
DIAG output transfer time
tDOFF
Main input signal 1
V
IN1
Main input signal 2
VIN
2
Backup input signal
INB/U
V
Input select signal
INSEL
V
Power supply voltage
VB
Output voltage 1
VOUT1
OCP
OCP
Output current 1
OUT1
I
DIAG output 1
VDIAG
1
DIAG output 2
DIAG2
V
Output
1
Output
1
Output
1
Output
1
Output
1
Output 1
Nomal
Nomal
Overheat
Over current Open load
Overheat
Over current Open load
Main mode
Backup mode
42
43
Low-side Switch ICs [Surface-mount 4-circuits with Output Monitor] SPF5012(under development)
(unit: mm)
External Dimensions
Features
17.28±0.2
15.58±0.2
ꢀ Output monitor circuit (DIAG)
ꢀ DMOS 4ch output
ꢀ Allows ON/OFF using C-MOS logic level
ꢀ Built-in overcurrent, overvoltage and thermal protection circuits
+0.1
–0.05
1.0
Fin
thickness
24
13
a
b
Absolute Maximum Ratings
(Ta=25ºC)
1
12
Parameter
Symbol
Ratings
40
Unit
V
Conditions
+0.15
–0.05
0.4
1.27±0.25
VB
DC input voltage
+0.15
–0.05
0.25
VCC
VO
7.5
V
Output voltage
40 (DC)
–0.5 to +7.5
Self Limited
0 to VCC
2.8 to 5
–40 to +150
150
V
1
2
*
*
a: Part No.
b: Lot No.
Logic input voltage
Output current
VIN
V
IO
A
Diag output voltage
Power Dissipation
Storage temperature
Channel temperature
Output avalanche capability
VDIAG
PD
V
Equivalent Circuit Diagram
W
ºC
ºC
mJ
VCC1-2
Tstg
Tch
EAV
(7)
Diag1
(5)
100
Single pulse
VB
(19)
Gate Protection
VOUT1
(3)
1. At the clamping operation, refer to the section of VOUT (clamp) in electrical characteristics
2. Changes by the patern of mounted substrate
*
*
Reg
OVP
Gate driver
TSD
VIN1
(4)
OCP
P. GND1
(1, 2)
Ch1
Electrical Characteristics
(VB =14V, Ta=25ºC unless otherwise specified)
Diag2
(8)
VOUT2
(10)
P. GND2
(11, 12)
Ratings
typ
VIN2
(9)
Parameter
Symbol
Unit
Conditions
min
5.5
4.5
max
40
Ch2
VB (opr)
VCC (opr)
Iq
V
V
VCC3-4
(18)
Power supply voltage
5.5
6
Diag3
(17)
VOUT3
(15)
P. GND3
(13, 14)
VIN3
(16)
4
8
mA
mA
V
VB=14V
,
,
,
VIN=0V
VIN=5V
VO=1A
Quiescent circuit current
Operating circuit current
Ch3
Id
12
VB=14V
VIN
3.5
5.5
1.5
50
V
B=14V
B=14V
Hi output
Diag4
(20)
VOUT4
(22)
P. GND4
(23, 24)
Input voltage
Input current
VIN4
(21)
VIN
–0.5
V
V
Lo output
Hi output
Lo output
Ch4
IIN
µA
µA
Ω
VB=14V
,
,
VIN=5V
IO 1A
L. GND
(6)
IIN
–30
0.3
0.2
55
VB=14V
VB
VB
=
14V
,
,
IO
=1A, Ta=125ºC
RDS (ON)
Output ON resistance
Output clamp voltage
Ω
=14V
IO
=1A, Ta=25ºC
VOUT (clamp)
45
25
50
V
VB=14V
,
IO=1A
VCC 5V, VIN
40V, Ta 25ºC
14V VCC
14V, Ta
Circuit Example
VB
VO
=
=
14V
,
=
=
=0V,
2.8
mA
IOH
Output leak current
VB
VO
=
=
,
=
5V, VIN=0V,
900
µA
18
19
3
10
15
22
7
=
25ºC
VCC1-2 VCC3-4 VB VOUT1 VOUT2 VOUT3 VOUT4
VF
VB (ovp)
1.6
40
V
V
IF=1A
Forward voltage of output stage diode
Overvoltage protection starting voltage
Overvoltage protection hysteresis voltage
Thermal shutdown operating temperature
Diag1
Diag2
Diag3
Diag4
5
8
4
9
VIN1
VIN2
VIN3
VIN4
VCC
Diag
Input
SPF5012
17 output
20
signal 16
21
VB
8
V
(ovp•hys)
L-GND
P-GND1 P-GND2 P-GND3 P-GND4
1, 2 11,12 13,14 23,24
6
TTSD
151
6
165
ºC
A
VB=14V
V
B=14V
,
,
,
Ta=–40ºC
Ta=25ºC
Ta=125ºC
Overcurrent protection
operating current
Truth table
IS
6
A
VB=14V
VB=14V
VIN
H
VO
L
5
A
TON
12
8
µs
µs
µs
µs
L
H
Output transfer time
TOFF
VB=14V, RL=14Ω, IO=1A
T
r
5
Output rise time
T
f
10
Output fall time
Timing Chart
ra (DIAG)
0.195
0.2
0.205
4.85
VB
=
14V
,
VO
=
1 to 14V, Rdiag
=500kΩ
Output-diag voltage ratio
Diag output clamping voltage
OVP
VDIAG (clamp)
V
VB
=
14V
,
VCC
=
5V, VO 40V
=
VB
VOUT
VIN
Normal
Overvoltage
Overheat
Overcurrent
* Self-excited frequency is used in the overcurrent protection.
44
45
Stepper-motor Driver ICs SLA4708M
(unit: mm)
External Dimensions
Features
ꢀ High output breakdown voltage of 50V
ꢀ Affluent output current of 1.5A
ꢀ Built-in overcurrent, overvoltage and thermal protection circuits
ꢀ Low standby current of 50µA
31.0±0.2
24.4±0.2
16.4±0.2
Ellipse 3.2±0.15 •3.8
4.8±0.2
1.7±0.7
3.2±0.15
a
b
Absolute Maximum Ratings
(Ta=25ºC)
Parameter
Power supply voltage
Breakdown voltage
Input voltage
Symbol
Ratings
Unit
V
Conditions
12
Pin
1.2±0.15
1
VS
35
50
0.85+–00..12
1.45±0.15
11•P2.54±0.7 27.94±1.0
0.55+–00..12
2.2±0.7
VO
V
=
VIN
–0.3 to +7
1.5
V
31.5max
Output current
IO, AVE
IDIAG
IDIAG. H
Top
Tstg
PD
A
Diagnostic output sink current
Diagnostic output withstand voltage
Operating temperature
Storage temperature
Power Dissipation
10
mA
V
a: Part No.
b: Lot No.
7
1
2 3 4 5 6 7 8 9 10 11 12
–40 to +85
–40 to +150
3.5 (Ta=25ºC)
ºC
ºC
W
Without heatsink
Standard Circuit Diagram
Electrical Characteristics
(VS=12V, Ta=25ºC)
+
ZD
C
Ratings
typ
Parameter
Symbol
Unit
Conditions
min
2.4
max
0.8
VIL
VIH
V
V
Input voltage
4
5
9
8
1
(IA/A, IB/B standby)
Input current
OUTA
OUTA
OUTB OUTB VS
DIAG
12
3
IIL
–0.8
50
mA
µA
V
VIN =0.4V
VIN =2.4V
IO =1A, Ta= 2 5 ºC
IA/A
SLA4708M
CPU
ZD: VS <35V
100µF
10
IB/B
IIH
C
STBY
2
5V
(Reference)
P-GND
L-GND L-GND
VO.STA
VO.STA
IO.LEAK
ISD
1.3
1.5
100
7
N.C.
6
11
4.7kΩ
Stepper
motor
Output saturation voltage
V
IO =1.5A, Ta= 2 5 ºC
Output leak current
Overcurrent detection
Overvoltage detection
µA
A
VO = 1 6 V
1.8
VSD
27.5
V
Saturation voltage of diagnostic
output
VDIAG.L
ISTB
0.3
V
I
DIAG =5mA
Standby current
50
µA
VS =12V
46
SLA4708M
Electrical Characteristics
Power Supply Current Characteristics
Overvoltage Protection Characteristics
Saturation Voltage of Output Transistor Characteristics
2.0
ꢀ
ꢀ
ꢀ
20
10
0
200
100
0
14
Common for
Vcc(Vs) =16V
=
Constant (ST = 5V)
T
a
25ºC
all phases
=
V
cc
12V
Ta =25ºC
12
10
Common for
all phases
1.5
1.0
8
6
4
At standby (ST = 0V)
0.5
0
2
0
0
10
20
30
0
1.0
2.0
3.0
0
10
20
30
35
Power supply voltage VS (V)
Power supply voltage VS (V)
Output current IO (A)
Thermal Protection Characteristics
ꢀ
14
Vcc(Vs) =12V
=
VST 5V
12
10
8
Tj2
Tj1
6
4
2
0
0
110 120 130
140 150 160
Junction temperature Tj (ºC)
47
Full Bridge PWM Control DC Motor Driver IC SI-5300
(unit: mm)
External Dimensions
Features
4.8±0.2
(28.4)
ꢀ P-ch MOS for high side and N-ch MOS for low side in one package
ꢀ Enable to drive DC±5V
ꢀ Possible to drive a motor at the LS-TTL, C-MOS Logic level
ꢀ Guarantee Tj=Tch=150°C
ꢀ Built-in over current protection and thermal shut down circuits
2.7±0.2
a
b
ꢀ
Built-in diagnosis function to monitor and signal the state of each protection circuits
(R0.8)
ꢀ Built-in vertical current prevention circuits (Dead time is defined internally.)
ꢀ No insulator required for Sanken's original package (SPM package)
R-end
(R0.8)
+0.2
+0.2
–0.1
–0.1
0.75
0.45
14•P2.03±0.1=(28.42)
2±0.5
4.5±0.7
35±0.3
Absolute Maximum Ratings
(Ta=25ºC)
Parameter
Symbol
Ratings
40
Unit
V
Conditions
a: Part No.
Motor supply voltage
VM
b: Lot No.
1
2 3 4 5 6 7 8 9 10 11 12 13 14 15
IN1
–0.3 to 7
–0.3 to 7
–0.3 to 7
±5
V
Input terminal voltage
Output current
IN2
V
PWM
IO
V
Equivalent Circuit
A
VM
VM
VM
IO (p-p)
fPWM
fCW
±17
A
PW 1ms, Duty 50%
Duty=20% to 80%
B
B
PWM control frequency
Forward • reverse rotation switch frequency
Operating temperature
20
kHz
Hz
ºC
ºC
ºC
ºC/W
ºC/W
W
OCP
OCP
Pre-Rec
Pch1
Pch2
*
500
OUT1
M
TSD
A
B
FF
A
B
TOP
–40 to +85
–40 to +150
–40 to +150
3.7
Q
R
S
ECU inside
VCC
Junction and channel temperature
Storage temperature
Tj, Tch
Tstg
j-c
PULL-UP
Resistor
Dead
Time
IN1
PWM
IN2
OUT2
DIAG
Nch1
Nch2
A
PWM
DIAG
CONTROL
A
down
edge
sense
Thermal resistance
Power dissipation
OCP
OCP
TDIAG
B
B
j-a
35
CDIAG
1µF
Dead
Time
A
PD1
3.6
Without heatsink
LGND
A
PD2
33.7
W
With infinite heatsink
PGND
PGND
Note: The dead time for the length current prevention in positive and the reversing switch is set by
*
internal control IC. The set point in internal IC at the dead time is 20µs (typical).
Please take into account the dead time and consider the load conditions when you use the IC.
Standard Connection Diagram
Relay
Electrical Characteristics
3, 5, 13
+
(Unless, otherwise specified, Tj=Tch=25°C, VM=14V, IO=3A)
Capacitor
VM
1, 2
OUT1
220µF
Ratings
typ
Parameter
Symbol
Unit
Conditions
VM=24V (2 min.)
min
6
max
18
Battery
6
IN1
11 IN2
PWM
10 DIAG
14, 15
OUT2
VIN
V, VM-VO
V, VO-PG
IL, L
V
V
Motor supply voltage
Output saturation voltage
M
0.8
0.3
100
100
10
IO=3A
CPU
SI-5300
7
V
IO=3A
µA
µA
µs
µs
µs
V
VM=40V
VM=40V
Output leakage current
Output transmission time
VCC
IL, H
8
9
4,12
PGND
Pull-up Resistor
10kΩ
(Open Collector)
LGND
2
3
TDIAG
tpLH
VPWM
:
:
L
H (Vth
=
2.5V typ)
2.5V typ)
*
*
Delay Capacitor
1µF
tpHL
15
VPWM
H
L (Vth
=
tpHL-tpLH
10
0.8
1.0
0.8
1.0
22
IO=3A
VF•L
VF•H
Forward voltage
characteristic of diode
between drain and source
V
IO=10A
IO=3A
V
Timing Chart
V
IO=10A
Forward
Duty ON
Forward
Reverse
Duty OFF Duty ON
Reverse
Stop
Stop
Duty OFF (Free Run) (Free Run)
Breake
Breake
IM1
IM2
mA
mA
mA
V
Stop mode
Therminal name
22
Forward and reverse mode
Brake mode
Static circuit current
IN1
IM3
16
IN2
VIN, H
VIN, L
3.0
VIN1=VIN2=VPWM
Input terminal voltage
Input terminal current
PWM
OUT1
2.0
V
VIN1=VIN2=VPWM
High inpidance
High inpidance
High inpidance
IIN, L
–100
µA
µA
A
VIN1=VIN2=VPWM=0V
IIN, H
200
VIN1=VIN2=VPWM=5V
1
OUT2
IOUT (A)
OPC start current
IOCP
tDIAG
VD•L
16
20
*
C=1µF (typ)
GND
DIAG output pulse width
DIAG terminal voltage
ms
V
4
0.3
ID•SINK=1mA
*
Protection circuit
Return to constant action
Note:
VM=2V
VM=2V
1: The standard value of IOCP is assumed to be a value by which the output of each Power MOS FET cuts off. When the
protection circuit of OCP and TSD operates, Power MOS FETs keeps cutoff. When a signal (5V: H ꢀꢀ0V: L) is input to the
terminal PWM, the cutoff operation will be released. Moreover, three minutes (Ta=25ºC, fPWM=10kHz, VM=14V) are assumed
to be max at the overcurrent state continuance time in the VM operation and the ground of output terminal (OUT1, OUT2).
It is not the one to assure the operation including reliability in the state that the short-circuit continues for a long time.
*
VM
IN1
IN2
2: Output transmission time (tpLH)
3: Output transmission time (tpHL)
*
*
PWM
VPWM (5V)
VPWM (5V)
VM-OUT1
(Pch1 VDS)
PWM terminal
PWM terminal
V
th
VM-OUT2
(Pch2 VDS)
V
th
Output transmission
time tpLH is time from
Vth (2.5V typ) of the
terminal of PWM to
Output transmission
time tpHL is time from
Vth (2.5V typ) of the
terminal of PWM to
VOUT
VOUT 0.9
GND
VOUT1-GND
(Nch1 VDS)
VOUT2-GND
(Nch2 VDS)
GND
GND
*
OUT terminal
OUT terminal
VOUT 0.1
*
output (VOUT 0.9) of
output (VOUT 0.1) of
*
*
GND
OUT1
the output terminal.
the output terminal.
tpHL
tpLH
OUT2
4: DIAG signal output terminal is an open collector output. Use a pull-up resistor when connecting it to a logic circuit.
*
IOUT (A)
TDIAG
20ms
(min)
DIAG
DIAG Threminal
VCC=5V Pull-up
48
SI-5300
Electrical Characteristics
Output saturation voltage (Pch)
1.0
Output saturation voltage (Nch)
0.5
Forward voltage of Diode between drain and source
■
■
■
■
■
■
■
■
■
■
■
12
V
=14V
M
V =14V
M
Ta=25ºC
10
0.4
0.3
0.2
0.1
0
0.8
0.6
0.4
0.2
0
Nch
Ta=150ºC
Ta=85ºC
Ta=25ºC
Ta=–40ºC
MOS FET
8
6
4
2
0
Ta=150ºC
Ta=85ºC
Ta=25ºC
Ta=–40ºC
Pch
MOS FET
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
0.2
0.4
0.6
0.8
1.0
1.2
I
(A)
I (A)
O
O
V
FSD
(V)
Quiescent circuit current
25
Voltage of input terminal (Threshold voltage)
16
Current of input terminal (SINK current)
0.6
Duty on
Brake
V
=14V
M
V
=14V
M
0.5
0.4
0.3
0.2
0.1
0
20
15
10
5
12
Duty off
Stop
Ta=150ºC
Ta=85ºC
Ta=25ºC
Ta=–40ºC
Ta=150ºC
Ta=25ºC
Ta=–40ºC
8
4
I
=0A
O
Ta=25ºC
0
0
0
10
20
(V)
30
40
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
V
M
V , PWM (V)
IN1, IN2
V , PWM (V)
IN1, IN2
Current of input terminal (Source current)
–12
VTDIAG – VDIAG Characteristics
DIAG terminal • Saturation voltage
0.6
Pull-up resistance =3kΩ
6
5
4
3
2
1
0
V
=14V
M
I
1=I 2=PWM=0V
IN
IN
V
=14V
M
0.5
0.4
0.3
0.2
0.1
0
–10
–8
–6
–4
–2
0
Ta=150ºC
Ta=25ºC
Ta=–40ºC
Ta=150ºC
Ta=150ºC
Ta=25ºC
Ta=–40ºC
Ta=85ºC
Ta=25ºC
Ta=–40ºC
0
1
2
3
4
5
6
0
10
20
(V)
30
40
0
1
2
3
4
5
6
I (mA)
SINK
V
V
TDIAG
(V)
M
DIAG terminal • Output pulse width
Thermal shut down protection
6
1000
V
I
=10V
=0A
M
Ta=25ºC
O
V
=14V
M
5
4
3
2
1
0
100
10
1
100
125
150
175
200
0.01µ
0.1µ
1µ
10µ
Ta (ºC)
TDIAG terminal Delay capacitor capacitance
49
Full Bridge PWM Control DC Motor Driver IC SI-5300
Electrical Characteristics
Pch MOS FET Safe Operating Area (SOA)
Nch MOS FET Safe Operating Area (SOA)
PD—Ta Characteristics
■
■
■
40
100
100
Tc=25ºC
Tc=25ºC
Infinite heatsink (Tc=25ºC)
35
30
25
20
15
10
5
1ms
1ms
10ms
10
10
10ms
100ms
100ms
1
1
No heatsink
0
0.3
0.3
0
–40 –30
25
50
75
100
2
10
40
100
2
10
40
100
V
(V)
V
(V)
Ambient temperature Ta (ºC)
M-OUT
OUT -PG
50
51
High Voltage Full Bridge Drive IC SLA2402M
(unit: mm)
Features
External Dimensions
■ One Package Full Bridge Driver Consisted of High Voltage IC and Power
MOS FETs (4 pieces)
■ High Voltage Driver which accepts direct connection to the input signal line
■ External components such as high voltage diodes and capacitors are not required
31.0±0.2
24.4±0.2
16.4±0.2
4.8±0.2
3.2±0.15
Ellipse 3.2±0.15•3.8
1.7±0.1
a
b
Absolute Maximum Ratings
Parameter
Power source voltage
Input voltage
Symbol
VM
Ratings
500
Unit
V
Conditions
+0.2
0.65 +0.2
2.45±0.2
–0.1
–0.1
1.0
*
+0.2
17•P1.68±0.1=28.56
–0.1
0.55
VIN
15
V
Output voltage
VO
500
V
31.5 max
Output current
IO
15
A
P
250µs
W
a: Part No.
b: Lot No.
Power dissipation
Storage temperature
Operation temperature
PD
5 (Ta=25ºC)
–40 to +125
–40 to +105
W
ºC
ºC
Without heatsink
Tstg
Topr
* Power GND (D terminal) to -HV (-HV terminal) voltage.
Block Diagram
Electrical Characteristics
Ratings
Parameter
Symbol
Unit
Conditions
7
min
500
typ
max
100
+12V
MOSQ1
MOSQ2
Power MOS FET output
breakdown voltage
VCC
4
IO=100µA
O=500V
D1
15
BVOUT
V
HO1
LO1
HO2
LO2
OUT1
OUT2
17
MIC
MOSQ'1
GL1
MOSQ'2
GL2
Power MOS FET output
leakage voltage
2
IOUT (off)
µA
V
VIN1
–HV VIN
2
L GND
VOUT (on)
VOUT (on)
VOUT (on)
1
0.28
1.4
0.4
2.0
0.4
2.0
0.52
2.6
V
V
IO=0.4A, VIN=10V
IO=2A, VIN=10V
High-side Power MOS FET
output on-state voltage
8
9
11
13
3
6
2
1
10
16
I
O=0.4A, VGL=10V
O=2A, VGL=10V
CPU
0.28
1.4
0.52
2.6
V
Low-side Power MOS FET
output on-state voltage
VOUT (on) 2
V
I
Dotted Line: Outside Connection
*
ICC
ICC
ICC
1
2
3
3.0
mA
mA
mA
V
V
CC=4.5 to 15V
Quiescent circuit current
4.0
VCC=10V, VM=400V
4.0
VCC=10V, VM=400V
VCC=4.5 to 15V
Operating circuit current
Input voltage (High level)
Input voltage (Low level)
VIH
0.8VCC
Timing Chart
VIL
0.2VCC
V
VCC=4.5 to 15V
t
t
1.4
3.3
µs
µs
µs
V
d (on)
d (off)
∆t
VCC=10A, VIN=10V,
VM=85A,
Ignition
OSC 400Hz
VCC
IN1
Delay time
*
IO=0.41A
2.5
15
–40 to +105ºC
Operating voltage
VCC
IN2
HO1
LO2
HO2
LO1
* About delay time
Signal input waveform vs output waveform
1
2
Lowside switch turn-on, turn-off
Highside switch turn-on, turn-off
VIN1
0V
VIN1
0V
10%
10%
10%
10%
—HV
0V
0V
0V
10%
10%
–100V
VOUT2
10%
VOUT1
10%
OUT2-GND
–400V
td (on)
td (on)
td (on)
td (on)
* ∆t: ∆t=td (on) – td (off)
Measurement Circuit
Conditions
VCC=10V, VIN=10V (pulse)
VM=85V
VIN2
VIN1
RL
IO=0.41A (RL=207Ω)
VOUT1
VOUT2
When pulse signal is inputted to V
,
lN1
*
VIN2
VIN1
R
R
on solid line is ON and dotted line
is off.
L
L
VM
On the contrary, when pulse signal is
inputted to V , R on dotted line is
lN2
L
ON and dotted line R is off.
L
52
SLA2402M
Electrical Characteristics
■ Quiescent circuit current
Quiescent circuit current supplied high voltage
3.0
Operating circuit current
3.0
■
■
■
■
■
■
■
3.0
V
V
=0V
V
CC
=V 1(2)=10V
IN
IN
150ºC
105ºC
150ºC
105ºC
V
=0V
IN
=10V
CC
2.5
2.0
1.5
1.0
0.5
0
2.5
2.0
1.5
1.0
0.5
0
2.5
2.0
1.5
1.0
0.5
0
25ºC
150ºC
105ºC
25ºC
–40ºC
–40ºC
25ºC
–40ºC
0
5
10
15
20
0
100
200
300
400
500
500
150
0
100
200
300
400
500
500
15
Operation voltage V (V)
High voltage V (V)
CC
M
High voltage V (V)
M
Quiescent circuit current supplied high voltage
5
Quiescent circuit current
3.0
Operating circuit current
3.5
■
■
■
Ta=25ºC
V
V
=0V
=400V
IN
Ta=25ºC
V
=
15V
CC
V
=
CC
15V
3.0
M
2.5
150ºC
105ºC
4
3
2.5
2.0
2.0
1.5
1.0
0.5
0
12V
12V
25ºC
10V
9V
1.5
1.0
0.5
0
10V
9V
2
1
0
–40ºC
4.5V
4.5V
0
5
10
15
20
0
100
200
300
400
0
100
200
300
400
Operation voltage V (V)
High voltage V (V)
CC
M
High voltage V (V)
M
Output on-state voltage
10
Gate drive voltage
10
Gate drive voltage
10
Ta=25ºC
V
=V =10V
IN
CC
V
=10V
CC
8
6
8
8
6
4
2
V
=15V
CC
V
=9V
CC
150ºC
105ºC
6
4
2
0
4
2
0
V
=
CC
4.5V
25ºC
–40ºC
0
–50
0
1
2
3
4
0
5
10
0
50
100
Output current (A)
Input voltage V (V)
Ambient temperature (ºC)
IN
Output on-state voltage
5
Input threshold voltage
8
V
=10V
CC
V
=V =10V
IN
CC
7
6
5
4
3
2
1
V
V
IH
4
3
2
1
IL
I
=2A
O
I
=0.4A
O
0
–50
0
–50
0
50
100
150
0
50
100
150
Ambient temperature (ºC)
Ambient temperature (ºC)
53
High Voltage Full Bridge Drive IC SLA2402M
Electrical Characteristics
High side switch turn-on, off
High side switch turn-on, off
5.0
Low side switch turn-on, off
■
■
■
■
■
5.0
5.0
Ta=25ºC
V
V
=85V, I =0.41A
O
Ta=25ºC
M
V
M
=85V, I =0.41A
=10V
CC
V =85V, I =0.41A
M O
O
turn-off
4.0
3.0
4.0
3.0
4.0
3.0
turn-off
turn-off
2.0
1.0
0
2.0
1.0
0
2.0
1.0
0
turn-on
turn-on
14
turn-on
14
4
6
8
10
12
16
–50
0
50
100
150
4
6
8
10
12
16
Operation voltage V (V)
Ambient temperature (ºC)
Operation voltage V (V)
CC
CC
Low side switch turn-on, off
5.0
Transient thermal resistance characteristics
100
Safe operating area (Power MOS FET)
100
■
■
V
V
=85V, I =0.41A
O
M
RDS (on)
limited
=10V
CC
turn-off
turn-on
4.0
3.0
10
1
10
100µs
1ms
1
2.0
1.0
0
0.1
10ms
0.1
0.01
Ta=25ºC
Ta=25ºC
Single pulse
Single pulse
0.001
0.0001 0.001 0.01 0.1
0.01
1
10 100
–50
0
50
100
150
10
100
1000
Power time (s)
Ambient temperature (ºC)
Drain to source voltage (V)
Power derating curve
6
without heatsink
5
4
3
2
1
0
–50
0
50
100
150
Ambient temperature (ºC)
54
55
High Voltage Full Bridge Drive IC SLA2403M
(unit: mm)
Features
External Dimensions
■ One Package Full Bridge Driver Consisted of High Voltage IC and Power
MOS FETs (4 pieces)
■ High Voltage Driver which accepts direct connection to the input signal line
■ External components such as high voltage diodes and capacitors are not required
31.0±0.2
24.4±0.2
16.4±0.2
4.8±0.2
3.2±0.15
Ellipse 3.2±0.15•3.8
1.7±0.1
a
b
Absolute Maximum Ratings
Parameter
Power source voltage
Input voltage
Symbol
VM
Ratings
Unit
V
Conditions
+0.2
0.65 +0.2
2.45±0.2
500
15
–0.1
–0.1
1.0
*
+0.2
17•P1.68±0.1=28.56
–0.1
0.55
VIN
V
Output voltage
VO
500
V
31.5 max
IO
7
A
Tc=25ºC
P 250µs
W
Output current
a: Part No.
b: Lot No.
IO (peak)
15
A
5 (Ta=25ºC)
40 (Tc=25ºC)
–40 to +125
–40 to +125
150
W
W
ºC
ºC
ºC
Without heatsink
Power dissipation
PD
With infinite heatsink
Storage temperature
Operation temperature
Junction temperature
Tstg
Topr
Tj
Block Diagram
* Power GND (D terminal) to -HV (-HV terminal) voltage.
7
Electrical Characteristics
MOSQ1
MOSQ2
D2
4
D1
VCC
15
HO1
LO1
HO2
LO2
OUT1
OUT2
Ratings
5
3
MIC
14
16
MOSQ'1
GL1
MOSQ'2
GL2
Parameter
Symbol
Unit
Conditions
min
500
typ
max
VIN
1
–HV VIN
2
L GND
Power MOS FET output
breakdown voltage
BVOUT
IOUT (off)
VOUT (on)
VOUT (on)
V
µA
V
IO=100µA
Power MOS FET output
leakage voltage
2
6
8
10
9
11
13
17
100
VO=500V
CPU
High-side Power MOS FET
output on-state voltage
Dotted Line: Outside Connection
0.18
0.18
0.26
0.26
0.34
0.34
IO=0.4A, VIN=10V
*
Lowside Power MOS FET
output on-state voltage
V
I
O=0.4A, VGL=10V
ICC
ICC
ICC
1
2
3
3.0
4.0
4.0
mA
mA
mA
V
VCC=6 to 15V
Quiescent circuit current
V
CC=10V, VM=400V
CC=10V, VM=400V
Timing Chart
V
Operating circuit current
Input voltage (High level)
Input voltage (Low level)
VIH
0.8VCC
VCC=6 to 15V
VCC=6 to 15V
Ignition
OSC 400Hz
VCC
IN1
VIL
0.2VCC
V
t
t
2.0
3.0
µs
µs
V
d (on)
d (off)
VCC
VCC=10A, VIN=10V,
VM=85V, IO=0.41A
Delay time
*
IN2
HO1
LO2
HO2
LO1
Operating voltage
6
15
–40 to +125ºC
* About delay time
Signal input waveform vs output waveform
1
2
Lowside switch turn-on, turn-off
Highside switch turn-on, turn-off
VIN1
0V
VIN1
0V
10%
10%
10%
10%
—HV
0V
–100V
0V
0V
OUT2-GND
–400V
10%
10%
VOUT2
10%
VOUT1
10%
td (on)
td (on)
td (on)
td (on)
* ∆t: ∆t=td (on) – td (off)
Measurement Circuit
Conditions
VCC=10V, VIN=10V (pulse)
VM=85V
VIN2
VIN1
RL
IO=0.41A (RL=207Ω)
VOUT1
VOUT2
When pulse signal is inputted to V
,
lN1
*
VIN2
VIN1
R
R
on solid line is ON and dotted line
is off.
L
L
VM
On the contrary, when pulse signal is
inputted to V , R on dotted line is
lN2
L
ON and dotted line R is off.
L
56
SLA2403M
Electrical Characteristics
Quiescent circuit current
3.0
Quiescent circuit current supplied high voltage
3.0
Operating circuit current
4.0
■
■
■
■
■
■
■
■
■
■
■
■
V
V
=0V
V
CC
=V 1(2)=10V
IN
IN
V
=0V
IN
150ºC
125ºC
=10V
CC
3.5
3.0
2.5
2.5
2.0
1.5
1.0
0.5
0
2.5
2.0
1.5
1.0
0.5
0
150ºC
125ºC
150ºC
125ºC
85ºC
85ºC
25ºC
85ºC
25ºC
2.0
1.5
1.0
0.5
0
25ºC
–40ºC
–40ºC
–40ºC
0
5
10
15
(V)
20
0
100
200
300
400
500
0
100
200
300
400
500
500
15
Operation voltage
V
High voltage
V (V)
M
High voltage
V
(V)
CC
M
Quiescent circuit current supplied high voltage
Quiescent circuit current supplied high voltage
Operating circuit current
4.0
3.5
5
150ºC
Ta=25ºC
V
V
=0V
=400V
IN
Ta=25ºC
V
=
15V
CC
V
=
15V
3.5
CC
M
125ºC
85ºC
3.0
2.5
2.0
1.5
1.0
0.5
0
4
3
3.0
2.5
12V
25ºC
12V
2.0
1.5
1.0
0.5
0
10V
9V
2
1
0
10V
9V
–40ºC
6V
6V
0
100
200
300
400
500
200
150
0
100
200
High voltage V (V)
M
300
400
0
5
10
15
(V)
20
High voltage
V
(V)
Operation voltage
V
CC
M
Output on-state voltage
6
Input threshold voltage
10
Gate drive voltage
10
Ta=25ºC
V
=V =10V
CC IN
V
=15V
CC
5
4
3
2
1
0
V
=10V
=6V
CC
8
6
8
V
=10V
CC
150ºC
125ºC
V
=
CC
6V
6
85ºC
25ºC
V
CC
4
2
0
4
2
0
–40ºC
0
1
2
3
4
–50
0
50
100
150
0
5
10
(V)
Output current
I
(A)
Ambient temperature (ºC)
Input voltage
V
OUT
IN
Output on-state voltage
4
Input threshold voltage
7
Gate drive voltage
10
V
=V =10V
CC IN
6
5
4
3
8
3
2
1
V
V
=10V
=6V
CC
6
4
I
=2A
O
V
V
=10V
=6V
CC
CC
2
1
0
CC
2
0
I
=0.4A
O
0
–50
–50
0
50
100
150
0
50
100
150
–50
0
50
100
Ambient temperature (ºC)
Ambient temperature (ºC)
Ambient temperature (ºC)
57
High Voltage Full Bridge Drive IC SLA2403M
Electrical Characteristics
High side switch turn-on, off
High side switch turn-on, off
5.0
Low side switch turn-on, off
■
■
■
■
■
5.0
5.0
Ta=25ºC
V
V
=85V, I =0.41A
O
Ta=25ºC
M
V =85V, I =0.41A
M
=10V
CC
V =85V, I =0.41A
M
O
O
4.0
3.0
4.0
3.0
4.0
3.0
turn-off
turn-on
turn-off
turn-on
turn-off
turn-on
2.0
1.0
0
2.0
1.0
0
2.0
1.0
0
4
6
8
10
12
(V)
14
150
150
–50
0
50
100
150
4
6
8
10
12
(V)
14
Operation voltage
V
Ambient temperature (ºC)
Operation voltage
V
CC
CC
Low side switch turn-on, off
5.0
Transient thermal resistance characteristics
100
Safe operating area (Power MOS FET)
■
■
100
V
V
=85V, I =0.41A
O
M
RDS (on)
limited
=10V
CC
10µs
100µs
4.0
3.0
10
1
10
1
turn-off
1ms
10ms
2.0
1.0
0
0.1
turn-on
0.1
0.01
Ta=25ºC
Ta=25ºC
Single pulse
Single pulse
0.001
0.001
0.01
–50
0
50
100
0.01
0.1
1
10
100
10
100
Drain to source voltage (V)
1000
Ambient temperature (ºC)
Power time (s)
Power derating curve
50
Tc=25ºC
40
30
20
10
without heatsink
0
–50
0
50
100
Ambient temperature (ºC)
58
59
Hall-Effect ICs
Unipolar Switch
Magnetic Characteristics [mT] (Ta=25ºC)
External
Dimensions
Temperature Range
Package
Part No.
Remarks
(ºC)
BOP (max)
BRP (min)
BHYS (min)
45
12.5
7
UA / LT
UA / LT
UA / LT
UA / LT
UA / LT
UA / LT
UA / LT
UA / LT / LH
UA / LT
1, 2
1, 2
A3121L■
A3122L■
A3123L■
A3141L■
A3142L■
A3143L■
A3144L■
A3240L■
A3250L■
40
14
7
44
18
7
1, 2
16
1
2
High-Sensitive
1, 2
–40 to +150
23
7.5
3
High-Sensitive
1, 2
34
16.5
3
High-Sensitive
1, 2
35
5
2
High-Sensitive
1, 2
5
0.5
1 (typ)
0.5
Ultra-High-Sensitive, Chopper-Stabilized
Programmable, Chopper-Stabilized
1, 2, 3
1, 2
Programmable
BOP—BHYS
Suffix ‘■’ is package option
Bipolar Switch
Magnetic Characteristics [mT] (Ta=25ºC)
External
Temperature Range
Package
Part No.
Remarks
High-Sensitive
Dimensions
(ºC)
BOP (max)
BRP (min)
–5
BHYS (min)
5
1
3
3
UA / LT
UA / LT
UA / LT
1, 2
1, 2
–40 to +150
–40 to +125
A3134L■
9.5
7.5
–9.5
UGS3132■
UGS3133■
–7.5
1, 2
Suffix ‘■’ is package option
Bipolar Latch
Magnetic Characteristics [mT] (Ta=25ºC)
External
Temperature Range
Package
Part No.
Remarks
Dimensions
(ºC)
BOP (max)
BRP (min)
–27
BHYS (min)
27
15
18
23
4
34
10
20
10
UA / LT
1, 2
1, 2
A3185L■
A3187L■
A3188L■
A3189L■
A3280L■
A3281L■
A3283L■
–15
UA / LT
–18
UA / LT
1, 2
–23
UA / LT
1, 2
–40 to +150
–4
4.5 (typ)
UA / LT / LH
UA / LT / LH
UA / LT / LH
Chopper-Stabilized
Chopper-Stabilized
Chopper-Stabilized
1, 2, 3
1, 2, 3
9
–9
10 (typ)
30 (typ)
18
–18
1, 2, 3
Suffix ‘■’ is package option
Gear Tooth Sensor
Magnetic Characteristics [mT]
External
Temperature Range
Part No.
Dimensions
(ºC)
BOP (max)
BRP (min)
–10
BHYS (min)
10
2
1
4
4
UGS3059KA
UGS3060KA
–40 to +150
3.5
–3.5
Ratiometric, Linear Sensors
Magnetic Characteristics [mT]
External
Dimensions
Temperature Range
Part No.
Remarks
(ºC)
Sense
50mV / mT
25mV / mT
Chopper-Stabilized
Chopper-Stabilized
1
1
A3515LUA
A3516LUA
–40 to +150
Subassembly
External
Part No.
Application
Dimensions
Large-tooth, gear-position sensing-crank angle, cam angle
5
6
6
ATS610LSA
ATS611LSB
ATS612LSB
Fine-pitch, large air gap, gear speed sensing-transmission speed ABS
Large / small-tooth gear-position sensing-crank angle, transmission speed, cam angle
60
Hall-Effect ICs
(unit: mm)
External Dimensions
Figure 1 (UA)
Figure 2 (LT)
Figure 3 (LH)
3.10
2.90
4.17
4.04
0.45
0.30
0.20
4.40
4.60
0.15
1.57
1.47
45°
1.40
1.60
1.62
1.83
0.35
0.44
3
2.10
1.85
1
3.00
2.70
0.25 MIN
2
2.13
2.29
2.29
2.60
3.10
2.97
0.89
1.20
3.94
4.25
45°
0.55
REF
0º to 8º
1
2
3
1
2
3
0.95
BSC
0.79
2.01
0.43
0.44
0.56
1.10
0.90
0.36
0.48
0.38
15.24
MIN
1.50
BSC
3.00
BSC
0.15
0.00
1.25
0.90
0.41
1.27
BSC
Figure 4 (KA)
6.45
6.32
1.60
1.50
4.65
4.50
45°
0.46
1
2
3
4
5
1.96
0.43
0.38
12.70
MIN
1.27
BSC
0.41
1.27
TYP
9.0
5.0MIN
Figure 5 (SA)
1
2
3
0.41
0.38
3.90
3.0
0.9DIA
8.1
9.0
2.0
1.27
TYP
7.0MIN
7.0
Figure 6 (SB)
1
2
3
0.41
0.38
3.90
3.0
0.9DIA
8.0
8.9
2.0
61
Custom IC
■ Various processing technologies of BIP, BiCMOS, CMOS and BCD can be used for the semiconductor chips.
■ Meets detailed user needs, especially power ICs. A wide range of general-purpose ICs is also available.
■ Employs a monolithic chip with flip-chip construction for increased reliability making it ideal for car electronic
devices.
■ Also available in hybrid ICs with transfer mold construction, multi-chip IC configuration and power monolithic
IC configuration.
Features
Examples of Sanken Automotive Hybrid ICs
■ All semiconductor chips used are
manufactured by Sanken.
■ Main product lineup consists of
Lead frame type
■
One-chip power IC
power ICs produced out of many
years' experience of Sanken.
■ Uses monolithic chips with flip-chip
construction.
multi-chip power IC
■ Mainly available in miniature
transfer-mold packages.
Examples of Custom Hybrid IC
Products
■
■
■
High-output high-breakdown voltage IC
Simplified integration of custom circuits
Distribution of unit functions
■ Regulators for alternators
■ Igniters
Lead frame type
power hybrid IC with
ceramic substrate
■ Power supply for microcomputer
system
(Actuators may be built in the device)
■ Power steering control IC
■ Motor and actuator driver
■ Others
Surface-mount
power IC
62
Custom IC
(unit: mm)
External Dimensions
STA 10pin
STA 8pin
FM205
MT-100
5.0
15.6
4.2
4.0
4.0
25.25
20.2
10.0
SMA12pin
SMA15pin
SLA12pin
SLA15pin
31.0
4.0
4.0
4.8
31.0
4.8
31.0
31.0
SLA18pin
3GR-F
3GR-M
STR-S
5.5
5.5
15.6
19.8
5.5
24.2
4.8
31.0
SPM
SMD16pin
SPF16pin
12.05
16 15 14 13 12 11 10
9
4.8
35
16
9
Pin 1
8
20.0
1
2
3
4
5
6
7
8
SPF20pin
SPF24pin
14.74±0.2
13.04±0.2
+0.1
–0.05
17.28
1.0
Fin
thickness
20
11
24
13
1
10
1
12
+0.15
1.27±0.25
–0.05
0.4
+0.15
–0.05
0.25
63
Transistors and MOS FETs
Index by Application
Application
Part No.
Page
74
80
2SD2141
MN638S
Igniters
73
75
79
84
85
86
99
90
105
91
2SC4153
2SD2382
MN611S
STA461C
STA463C
STA464C
STA508A
SDC09
Injectors
SDK09
SPF0001
66
66
2SA1488
AT (Automatic Transmissions)
Cruise controls
2SA1488A
68
72
87
2SA1568
2SC4065
SLA8004
67
88
89
2SA1567
SDA03
SDA04
Airbag systems
66
78
Boosters for power supply
of microcomputers
2SA1488
FP812
93
94
95
96
97
98
FKV460
FKV460S
FKV560
FKV560S
FKV660
FKV660S
Power steering
102
104
SLA5027
SDK08
ABS
70
Electronic meters
2SC3852
81
82
83
100
103
104
STA315A
STA335A
STA415A
STA509A
SDK06
Solenoid drivers
SDK08
71
Clutch controls
Lamp controls
2SC4024
92
101
2SK2701
SMA5113
69
77
76
2SC3851
FN812
2SD2633
Others
64
Transistors and MOS FETs
Index by Load
Single Package
Multi-chip Package
SD
Load
Current
Avalanche
Diode
Part No.
Chip
Remarks
SPF
TO220F TO220S
STA
SMA
SLA
(Surface-mount) (Surface-mount)
Single
Single
25W
25W
25W
2SA1488A
2SC3851
2SC3852
STA315A
STA335A
STA415A
STA509A
SDK06
Single
Single • 3
Single • 2
Single • 4
MOS • 4
MOS • 4
Single
35V
35V
35V
52V
52V
13.5W
12W
Es/b=50mJ
Es/b=150mJ
Es/b=50mJ
Es/b=40mJ
Es/b=40mJ
Approx.
0.5A
18W
20W
3W
2SA1488
2SC3851
2SC4153
MN611S
SPF0001
SDA03
25W
25W
30W
60W
Single
Single
VCEO=120V
Single
115V
65V
Es/b=45mJ
Es/b=45mJ
Single • 2
Single • 4
Single • 2
Single • 2
MOS • 4
MOS
2.5W
3W
SDA04
2.5W
2.8W
3W
Approx.
1.2A
SDC09
Es/b=80mJ
SDK08
SDK09
3W
STA461C
STA463C
STA464C
STA508A
SMA5113
2SA1567
2SD2382
2SK2701
FP812
Single • 2
Single • 2
Single • 4
MOS • 4
MOS • 4
Single
65V
18W
18W
4W
Es/b=80mJ
Es/b=45mJ
Es/b=80mJ
115V
20W
35W
VDSS=450V
35W
30W
35W
35W
35W
Single
65V
Es/b=200mJ
VDSS=450V
MOS
Approx.
3A
Single
FN812
Single
SLA8004
2SA1568
2SC4024
2SC4065
2SD2141
2SD2633
MN638S
SLA5027
FKV460
Single • 4
Single
40W
35W
35W
35W
35W
35W
60W
Single
Single
Approx.
5A
Darlington
Darlington
Darlington
MOS • 4
MOS
380V
380V
Es/b=210mJ
40W
40W
40W
40W
60W
60W
60W
RDS(ON) =9mΩ max
RDS(ON) =11mΩ max
RDS(ON) =14mΩ max
RDS(ON) =9mΩ max
RDS(ON) =11mΩ max
RDS(ON) =14mΩ max
FKV560
MOS
FKV660
MOS
10A
and over
FKV460S
FKV560S
FKV660S
MOS
MOS
MOS
65
Power Transistor 2SA1488/1488A
Absolute Maximum Ratings(Ta=25ºC)
Electrical Characteristics
External Dimensions TO220F (full-mold)
(Ta
=
25ºC)
Ratings
2SA1488 2SA1488A
Ratings
2SA1488 2SA1488A
Symbol
Test Conditions
Unit
Unit
Symbol
4.2
10.0
µA
V
V
–60
–60
–80
–80
V
V
–100max
–60
–100max
–80
CBO
3.3
2.8
C0.5
I
I
CBO
V
CEO
V
=
CB
V
EB = –6V
–100max
µA
V
V
I
–6
–4
–1
=
V
EBO
EBO
I
C = –25mA
–60min
–80min
A
V
C
(BR) CEO
a
b
I
B
A
h
V
= –4V,
I
C = –1A
B = –0.2A
E = –0.2A
1MHz
40min
FE
CE
2.6
I
C = –2A,
CE = –12V,
CB = –10V,
I
V
P
25 (T
25ºC)
–0.5max
15typ
W
ºC
ºC
V
CE (sat)
f
C
c
Tj
V
I
150
–55 to +150
MHz
pF
T
90typ
Tstg
C
V
f
=
OB
1.35
1.35
0.85
Typical Switching Characteristics (common emitter)
0.45
2.54
2.54
2.2
C
V
R
I
V
V
I
I
t
t
t
f
CC
(V)
L
(Ω)
C
(A)
BB1
(V)
BB2
(V)
B1
B2
on
(µs)
stg
(µs)
(mA) (mA)
(µs)
a) Part No.
b) Lot No.
(Unit: mm)
–12
6
–2
–10
5
–200 200 0.25typ 0.75typ 0.25typ
B
E
I —VCE Characteristics (typ.)
V
—IB Characteristics (typ.)
I —VBE Temperature Characteristics (typ.)
ꢀꢀ C
ꢀꢀ C
ꢀꢀ CE (sat)
(V = –4V)
CE
–4
–3
–2
–1.5
–4
–3
–1.0
–0.5
–2
–1
–10mA
= –5mA
–1
IC = –3A
I
B
–2A
–1A
–0.05 –0.1
0
0
0
–1
–2
–3
–4
–5
–6
0
–0.01
–0.5
–1
0
–0.5
–1.0
–1.5
VCE (V)
VBE (V)
IB (A)
h
ꢀꢀ FE—IC Characteristics (typ.)
h
ꢀꢀ FE—IC Temperature Characteristics (typ.)
j-a—t Characteristics
ꢀꢀꢀꢀ
(V = –4V)
CE
(V = –4V)
CE
5
500
200
125ºC
25ºC
100
50
Typ
–30ºC
100
50
20
1
20
–0.02
0.7
–0.01
–0.1
–0.5 –1
–4
–0.1
–1
–4
1
10
100
1000
IC (A)
IC (A)
t (ms)
f —IE Characteristics (typ.)
Safe Operating Area (single pulse)
ꢀꢀ
ꢀꢀPC—Ta Derating
ꢀꢀ T
(V = –12V)
CE
30
20
10
60
50
40
30
20
10
0
–10
natural air cooling
Silicone grease
Aluminum heatsink
Unit: mm
–5
100ms
Typ
–1
–0.5
Without heatsink
natural air cooling
–0.1
Without heatsink
2
0
–0.05
3
5
10
50
100
0.005 0.01
0.05 0.1
0.5
1
3
0
25
50
75
100 125
150
VCE (V)
IE (A)
Ta (ºC)
66
Power Transistor 2SA1567
Absolute Maximum Ratings(Ta
Electrical Characteristics
External Dimensions TO220F (full-mold)
(Ta=25ºC)
=
25ºC)
Symbol
CBO
Test Conditions
CB = –50V
EB = –6V
C = –25mA
CE = –1V, C = –6A
C = –6A, B = –0.3A
CE = –12V, E = –0.5A
CB = –10V, 1MHz
Ratings
–100max
–100max
–50min
50min
Unit
µA
Symbol
Ratings
–50
–50
–6
Unit
V
V
I
I
V
V
CBO
4.2
10.0
V
V
CEO
µA
EBO
3.3
2.8
C0.5
I
V
EBO
V
V
V
h
(BR) CEO
I
C
V
I
–12
–3
A
FE
I
I
V
I
B
A
–0.35max
40typ
V
CE
(sat)
V
I
P
C
35 (T
=
25ºC)
MHz
pF
a
b
W
ºC
ºC
f
T
c
2.6
Tj
330typ
150
C
OB
V
f =
Tstg
–55 to +150
1.35
Typical Switching Characteristics (common emitter)
1.35
0.85
V
CC
R
I
V
V
I
I
t
t
t
f
(µs)
L
(Ω)
C
(A)
BB1
(V)
BB2
(V)
B1
B2
on
(µs)
stg
(µs)
(V)
(mA) (mA)
0.45
2.54
2.54
–24
4
–6
–10
5
–120 120 0.4typ 0.4typ 0.2typ
2.2
C
a) Part No.
b) Lot No.
(Unit: mm)
B
E
I
ꢀꢀ C—VCE Characteristics (typ.)
V
—IB Characteristics (typ.)
I —VBE Temperature Characteristics (typ.)
ꢀꢀ C
ꢀꢀ CE (sat)
(V = –4V)
CE
–12
–12
–1.5
–10
–8
–6
–4
–2
0
–10
–8
–1.0
–0.5
–6
–4
–2
0
IC = –12A
–20mA
–9A
–6A
–3A
–10mA
–5mA
–1A
0
–2
–10
–100
–1000 –3000
0
–0.2 –0.4 –0.6 –0.8 –1.0 –1.2
0
–1
–2
–3
–4
–5
–6
VCE (V)
IB (mA)
VBE (V)
h
ꢀꢀ FE—IC Characteristics (typ.)
h
ꢀꢀ FE—IC Temperature Characteristics (typ.)
j-a—t Characteristics
ꢀꢀꢀꢀ
(V = –1V)
CE
(V = –1V)
CE
500
500
4
125ºC
25ºC
Typ
–30ºC
1
100
100
0.5
0.3
50
30
50
30
–0.02
–0.1
–1
–10
1
10
100
1000
–0.02
–0.1
–1
–10
IC (A)
IC (A)
t (ms)
f —IE Characteristics (typ.)
ꢀSafe Operating Area (single pulse)
ꢀ
ꢀꢀPC—Ta Derating
ꢀꢀ T
(V = –12V)
CE
35
50
40
30
20
0
–30
natural air cooling
Silicone grease
Aluminum heatsink
Unit: mm
30
–10
–5
Typ
20
10
–1
–0.5
Without heatsink
natural air cooling
50 • 50 • 2
–0.1
Without heatsink
2
0
–0.05
0.05 0.1
1
12
–3
–5
–10
–50
–100
0
25
50
75
100 125
150
IE (A)
VCE (V)
Ta (ºC)
67
Power Transistor 2SA1568
Absolute Maximum Ratings (Ta=25ºC)
External Dimensions TO220F (full-mold)
Electrical Characteristics
(Ta=25ºC)
Symbol
CBO
Test Conditions
CB = –60V
EB = –6V
C = –25mA
CE = –1V, C = –6A
C = –6A, B = –0.3A
ECO = –10A
Ratings
–100max
–60max
–60min
50min
Unit
µA
Symbol
Ratings
–60
Unit
V
I
I
V
V
CBO
4.2
10.0
V
3.3
2.8
V
CEO
–60
mA
V
EBO
C0.5
I
V
EBO
–6
V
V
V
h
(BR) CEO
±
I
C
V
I
12
A
FE
I
I
V
V
I
B
–3
A
–0.35max
–2.5max
40typ
V
CE (sat)
a
b
I
P
C
35 (T =25ºC)
V
f
W
ºC
ºC
c
FEC
2.6
VCE = –12V,
I
E
=
0.5A
Tj
150
MHz
pF
T
330typ
C
OB
V
CB = –10V,
f
=
1MHz
Tstg
–55 to +150
1.35
1.35
0.85
Typical Switching Characteristics (common emitter)
0.45
2.54
2.54
V
R
I
V
V
I
I
t
t
t
f
CC
(V)
L
(Ω)
C
(A)
BB1
(V)
BB2
(V)
B1
B2
on
(µs)
stg
(µs)
(mA) (mA)
(µs)
2.2
C
–24
4
–6
–10
5
–120 120 0.4typ 0.4typ 0.2typ
a) Part No.
b) Lot No.
B
E
(Unit: mm)
I
ꢀꢀ C — VCE Characteristics (typ.)
V
— IB Characteristics (typ.)
ꢀꢀIC — VBE Temperature Characteristics (typ.)
ꢀꢀ CE (sat)
(V = –1V)
CE
–12
–12
–10
–8
–6
–4
–2
0
–1.4
–10
–8
–6
–4
–2
0
–1.0
–0.5
IC = –12A
–9A
–6A
–3A
–20mA
–10mA
–1A
0
0
–1
–2
–3
–4
–5
–6
–7–10
–100
–1000 –3000
0
–0.2 –0.4 –0.6 –0.8 –1.0 –1.2
VCE (V)
IB (mA)
VBE (V)
h
ꢀꢀ FE — IC Characteristics (typ.)
h
ꢀꢀ FE — IC Temperature Characteristics (typ.)
j-a — t Characteristics
ꢀꢀꢀꢀ
(V = –1V)
CE
(V = –1V)
CE
300
4
300
125ºC
Typ
25ºC
–
30ºC
100
100
1
10
2
10
2
0.5
0.3
–0.02
–0.1
–1
–10
–12
1
10
100
1000
–0.02
–0.1
–1
–10
–12
IC (A)
IC (A)
t (ms)
f
ꢀꢀ T — IE Characteristics (typ.)
Safe Operating Area (single pulse)
ꢀꢀPC — Ta Derating
ꢀꢀ
(V = –12V)
CE
35
50
–30
natural air cooling
Silicone grease
Aluminum heatsink
Unit: mm
30
–10
–5
Typ
40
30
20
0
20
10
–1
–0.5
Without heatsink
natural air cooling
50•50•2
–0.1
Without heatsink
2
0
–0.05
0.05 0.1
1
10
–3
–5
–10
–50
–100
0
25
50
75
100 125
150
IE (A)
VCE (V)
Ta (ºC)
68
Power Transistor 2SC3851
Absolute Maximum Ratings (Ta=25ºC)
Electrical Characteristics
External Dimensions TO220F (full-mold)
(Ta=25ºC)
Unit
V
Ratings
Symbol
CBO
Test Conditions
Ratings
100max
100max
60min
Symbol
Unit
µA
V
CBO
80
I
I
V
=
CB
80V
6V
4.2
10.0
V
=
3.3
2.8
V
CEO
60
µA
V
EB
EBO
C0.5
I
C
=
25mA
V
EBO
6
V
V
V
h
(BR) CEO
I
C
V
I
=
2A,
4V,
I
=
0.2A
1A
40 to 320
0.5max
15typ
4
1
A
FE
CE
C
=
I
=
V
I
B
A
C
B
V
CE (sat)
a
b
V
=
12V,
IE = –0.2A
P
C
25 (Tc=25ºC)
150
MHz
pF
W
ºC
ºC
f
CE
T
2.6
Tj
60typ
C
OB
V
=
10V,
f
=
1MHz
CB
Tstg
–55 to +150
1.35
1.35
0.85
Typical Switching Characteristics (common emitter)
V
CC
R
I
V
V
I
I
t
t
t
f
(µs)
L
(Ω)
C
(A)
BB1
(V)
BB2
(V)
B1
B2
on
(µs)
stg
(µs)
(V)
(mA) (mA)
0.45
2.54
2.54
12
6
2
10
–5
200 –200 0.2typ 1typ 0.3typ
2.2
C
a) Part No.
b) Lot No.
B
E
(Unit: mm)
ꢀꢀIC — VCE Characteristics (typ.)
V
— IB Characteristics (typ.)
ꢀꢀIC — VBE Temperature Characteristics (typ.)
ꢀꢀ CE (sat)
(V = 4V)
CE
4
3
2
1
0
4
3
2
1
0
40mA
30mA
1.0
20mA
0.5
10mA
5mA
0
0
1
2
3
4
5
6
0.005 0.01
0.05 0.1
IB (mA)
0.5
1
0
0.5
1.0
1.2
VCE (A)
VBE (V)
h
ꢀꢀ FE — IC Characteristics (typ.)
h
ꢀꢀ FE — IC Temperature Characteristics (typ.)
j-a — t Characteristics
ꢀꢀꢀꢀ
(V = 4V)
CE
(V = 4V)
CE
500
500
5
125ºC
25ºC
Typ
100
50
100
50
–30ºC
1
20
0.01
20
0.01
0.5
0.1
0.5
1
4
1
10
100
1000
0.05 0.1
0.5
1
4
IC (A)
IC (A)
t (ms)
f
ꢀꢀ T — IE Characteristics (typ.)
Safe Operating Area (single pulse)
ꢀꢀPC — Ta Derating
ꢀꢀ
(V = 12V)
CE
30
20
10
40
30
20
10
10
5
1
Typ
0.5
Without heatsink
natural air cooling
0.1
Without heatsink
0.05
0
0
–0.005
–0.1
–0.5 –1
–4
0
50
100
150
3
5
50
80
10
IE (A)
VCE (V)
Ta (ºC)
69
Power Transistor 2SC3852
Absolute Maximum Ratings (Ta=25ºC)
Electrical Characteristics
External Dimensions TO220F (full-mold)
(Ta=25ºC)
Unit
Symbol
Ratings
Symbol
CBO
Test Conditions
Ratings
10max
100max
60min
Unit
µA
V
=
80V
6V
V
CBO
80
I
I
4.2
V
CB
10.0
3.3
2.8
V
=
V
CEO
60
µA
C0.5
V
EB
EBO
I
C
=
25mA
V
EBO
6
V
V
V
h
(BR) CEO
I
C
V
I
=
4V,
I
B
I
=
0.5A
500min
0.5max
15typ
3
1
A
FE
CE
C
=
2A,
12V,
10V,
I
=
50mA
V
I
B
A
C
V
CE (sat)
f
T
a
b
V
=
E = –0.2A
f = 1MHz
P
C
25 (Tc=25ºC)
150
MHz
pF
W
ºC
ºC
CE
2.6
Tj
50typ
C
OB
V
=
CB
Tstg
–55 to +150
1.35
1.35
0.85
Typical Switching Characteristics (common emitter)
V
R
I
V
V
I
I
t
t
t
f
(µs)
CC
(V)
L
(Ω)
C
(A)
BB1
(V)
BB2
(V)
B1
B2
on
(µs)
stg
(µs)
0.45
2.54
2.54
(mA) (mA)
2.2
C
20
20
1.0
10
–5
15 –30 0.8typ 3.0typ 1.2typ
a) Part No.
b) Lot No.
B
E
(Unit: mm)
I
ꢀꢀ C — VCE Characteristics (typ.)
V
— IB Characteristics (typ.)
ꢀꢀIC — VBE Temperature Characteristics (typ.)
ꢀꢀ CE (sat)
(V = 4V)
CE
3
2
1
0
1.5
3
2
1
0
5mA
1.0
0.5
3mA
2mA
1mA
3A
2A
IC=1A
0.5mA
0
0.001
0
1
2
3
4
5
6
0.005 0.01
0.05 0.1
0.5
1
0
0.5
1.0 1.1
VCE (V)
IB (A)
VBE (V)
h
ꢀꢀ FE — IC Characteristics (typ.)
h
ꢀꢀ FE — IC Temperature Characteristics (typ.)
j-a — t Characteristics
ꢀꢀꢀꢀ
(VCE=4V)
(V =4V)
CE
2000
2000
5
125ºC
1000
500
1000
500
Typ
1
VCB = 10V
IE = –2A
100
0.01
100
0.01
0.5
1
10
100
1000
0.1
0.5
1
3
0.1
0.5
1
3
IC (A)
IC (A)
t (ms)
f
ꢀꢀ T — IE Characteristics (typ.)
Safe Operating Area (single pulse)
ꢀꢀPC — Ta Derating
ꢀꢀ
(V = 12V)
CE
30
20
10
30
10
5
20
Typ
1
0.5
10
0
Without heatsink
natural air cooling
0.1
Without heatsink
0.05
0
–0.005 –0.01
–0.05
–
0.1
–0.5 –1 –2
3
5
10
50
100
0
50
100
150
IE (A)
VCE (V)
Ta (ºC)
70
Power Transistor 2SC4024
Electrical Characteristics
Absolute Maximum Ratings (Ta=25ºC)
External Dimensions TO220F (full-mold)
(Ta=25ºC)
Symbol
Test Conditions
100V
15V
25mA
4V,
Ratings
Unit
µA
µA
V
Symbol
Ratings
Unit
V
I
I
V
=
V
CBO
100
CBO
CB
10max
10max
4.2
10.0
3.3
2.8
V
=
V
CEO
50
V
EB
C0.5
EBO
I
C
=
V
EBO
15
V
50min
V
h
(BR) CEO
I
C
V
I
=
I
=
1A
0.1A
E = –0.5A
1MHz
300 to 1600
10
3
A
FE
CE
C
=
5A,
I
B
=
V
I
B
A
0.5max
24typ
C
V
CE (sat)
a
b
V
=
12V, I
f
P
C
35 (Tc=25ºC)
150
CB
MHz
pF
W
ºC
ºC
T
2.6
150typ
Tj
C
OB
V
=
10V,
f
=
CB
Tstg
–55 to +150
1.35
1.35
0.85
Typical Switching Characteristics (common emitter)
V
R
I
I
I
t
t
t
f
(µs)
CC
(V)
L
(Ω)
C
(A)
B1
(A)
B2
(A)
on
(µs)
stg
(µs)
0.45
2.54
2.54
2.2
C
20
4
5
0.1
–0.1
0.5typ
2.0typ
0.5typ
a) Part No.
b) Lot No.
B
E
(Unit: mm)
I
ꢀꢀ C — VCE Characteristics (typ.)
V
— IB Characteristics (typ.)
ꢀꢀIC — VBE Temperature Characteristics (typ.)
ꢀꢀ CE (sat)
(V = 4V)
CE
10
10
1.5
8
8
1.0
0.5
6
6
15mA
10mA
4
4
10A
5mA
2
2
5A
3A
IC = 1A
0.01
0
0
0
0
2
4
6
0.002
0.1
A)
1
2
0
0.5
VBE
1.0
1.2
VCE
(V)
IB
(
(V)
h
ꢀꢀ FE — IC Characteristics (typ.)
h
ꢀꢀ FE — IC Temperature Characteristics (typ.)
j-a — t Characteristics
ꢀꢀꢀꢀ
(V = 4V)
CE
(V = 4V)
CE
1000
4
1000
Typ
500
500
1
0.5
0.3
100
0.02
100
0.02
0.1
0.5
1
5
10
1
10
100
1000
0.1
0.5
1
5
10
IC
(A)
IC
(A)
t (ms)
f
ꢀꢀ T — IE Characteristics (typ.)
Safe Operating Area (single pulse)
ꢀꢀPC — Ta Derating
ꢀꢀ
(V = 12V)
CE
40
30
20
10
30
30
20
10
0
natural air cooling
Silicone grease
Aluminum heatsink
Unit: mm
Typ
10
5
1
Without heatsink
natural air cooling
0.5
50•50•2
Without heatsink
2
0
0.2
3
5
50
100
0
25
50
75
100 125
150
–
0.05 –0.1
–0.5 –1
–5 –10
10
IE
(A)
VCE
(V)
Ta (ºC)
71
Power Transistor 2SC4065
External Dimensions TO220F (full-mold)
Absolute Maximum Ratings
Electrical Characteristics
(Ta=25ºC)
(Ta=25ºC)
Symbol
Ratings
Unit
V
Symbol
Test Conditions
Ratings
Unit
µA
mA
V
I
I
V
=
60V
6V
25mA
4.2
V
CBO
60
CBO
CB
100max
60max
60min
10.0
3.3
2.8
V
=
C0.5
V
CEO
60
V
EB
EBO
I
C
=
V
EBO
6
±12
V
V
h
(BR) CEO
I
C
V
I
=
6A,
1V, I =
C
6A
50min
A
FE
CE
=
I
B
=
1.3A
V
V
I
B
3
A
0.35max
2.5max
24typ
C
V
CE (sat)
a
b
V
ECO
=
10A
P
C
35 (Tc=25ºC)
150
V
f
W
ºC
ºC
FEC
2.6
V
=
12V,
IE = –0.5A
Tj
CE
MHz
pF
T
180typ
C
OB
V
= 10V, f = 1MHz
Tstg
–55 to +150
CB
1.35
1.35
0.85
Typical Switching Characteristics (common emitter)
0.45
2.54
2.54
V
R
I
V
V
I
I
t
t
t
f
(µs)
CC
(V)
L
(Ω)
C
(A)
BB1
(V)
BB2
(V)
B1
(A)
B2
(A)
on
(µs)
stg
(µs)
2.2
C
24
4
6
10
–5
0.12 –0.12 0.6typ 1.4typ 0.4typ
a) Part No.
b) Lot No.
B
E
(Unit: mm)
I
ꢀꢀ C — VCE Characteristics (typ.)
V
— IB Characteristics (typ.)
ꢀꢀIC — VBE Temperature Characteristics (typ.)
ꢀꢀ CE (sat)
(V = 1V)
CE
12
10
8
12
10
8
1.3
1.0
0.5
0
60mA
40mA
6
6
20mA
4
4
12A
I
= 10mA
B
2
2
0
0
0
2
4
6
0.005 0.01
0.1
1
3
0
0.5
1.0 1.1
VCE (V)
IB (A)
VBE (V)
h
ꢀꢀ FE — IC Characteristics (typ.)
h
ꢀꢀ FE — IC Temperature Characteristics (typ.)
j-a — t Characteristics
ꢀꢀꢀꢀ
(V = 1V)
CE
(V = 1V)
CE
400
5
400
Typ
100
50
100
50
1
0.5
10
10
5
3
0.02
5
3
0.02
0.2
0.1
1
10 12
0.1
1
1012
1
10
100
1000
IC (A)
IC (A)
t (ms)
f
ꢀꢀ T — IE Characteristics (typ.)
Safe Operating Area (single pulse)
ꢀꢀPC — Ta Derating
ꢀꢀ
(V = 12V)
CE
40
30
20
10
30
30
20
10
natural air cooling
Silicone grease
Aluminum heatsink
Unit: mm
Typ
10
5
1
0.5
Without heatsink
natural air cooling
50•50•2
0.1
Without heatsink
2
0
0.05
0
3
5
10
50
100
0
25
50
75
100 125
150
–0.05 –0.1
–0.5 –1
–5 –10 –12
IE (A)
VCE (V)
Ta (ºC)
72
Power Transistor 2SC4153
External Dimensions TO220F (full-mold)
Electrical Characteristics
Absolute Maximum Ratings (Ta=25ºC)
(Ta=25ºC)
Symbol
Ratings
Unit
Symbol
CBO
Test Conditions
Ratings
100max
100max
120min
70 to 220
0.5max
1.2max
30typ
Unit
µA
µA
V
4.2
I
I
V
=
200V
8V
50mA
4V,
V
CBO
200
V
CB
10.0
3.3
2.8
C0.5
V
=
V
CEO
120
V
EB
EBO
I
C
=
V
EBO
8
7 (pulse 14)
3
V
V
h
(BR) CEO
I
C
V
I
=
I
C
=
3A
A
FE
CE
=
3A,
3A,
I
I
=
=
0.3A
0.3A
V
V
I
B
A
C
B
V
CE (sat)
a
b
I
=
=
=
C
B
P
C
30 (Tc=25ºC)
150
V
f
W
ºC
ºC
BE (sat)
2.6
V
12V,
I
E = –0.5A
Tj
CE
MHz
pF
T
C
OB
V
CB
10V,
f
=
1MHz
110typ
Tstg
–55 to +150
1.35
1.35
0.85
Typical Switching Characteristics (common emitter)
0.45
2.54
2.54
V
R
I
V
V
I
I
t
t
t
f
(µs)
CC
(V)
L
(Ω)
C
(A)
BB1
(V)
BB2
(V)
B1
(A)
B2
(A)
on
(µs)
stg
(µs)
2.2
C
50
16.7
3
10
–5
0.3
–0.6 0.5max 3max 0.5max
a) Part No.
b) Lot No.
B
E
(Unit: mm)
I
ꢀꢀ C — VCE Characteristics (typ.)
V
— IB Characteristics (typ.)
ꢀꢀIC — VBE Temperature Characteristics (typ.)
ꢀꢀ CE (sat)
(V = 4V)
CE
3
7
6
5
4
3
2
1
0
7
5
5
4
3
2
1
0
2
1
0
I
=10mA
B
0.005 0.01
0.1
1
2
0
1
2
3
4
0
0.5
1.0 1.1
VCE (V)
IB (A)
VBE (V)
h
ꢀꢀ FE — IC Characteristics (typ.)
h
ꢀꢀ FE — IC Temperature Characteristics (typ.)
j-a — t Characteristics
ꢀꢀꢀꢀ
(V = 4V)
CE
(V = 4V)
CE
300
300
5
Typ
100
50
100
50
1
0.5
20
0.01
20
0.01
0.2
0.1
0.5
1
5 7
1
10
100
1000
0.1
0.5
1
5 7
t (ms)
IC (A)
IC (A)
f
ꢀꢀ T — IE Characteristics (typ.)
Safe Operating Area (single pulse)
ꢀꢀPC — Ta Derating
ꢀꢀ
(V = 12V)
CE
30
20
10
20
10
5
40
natural air cooling
Silicone grease
Aluminum heatsink
Unit: mm
Typ
30
1
20
10
0
0.5
50•50•2
Without heatsink
natural air cooling
0.1
Without heatsink
2
0
0.05
5
10
50
100
200
0
25
50
75
100 125
150
–0.01
–0.1
–1
–5
IE (A)
VCE (V)
Ta (ºC)
73
Power Transistor 2SD2141
External Dimensions TO220F (full-mold)
Absolute Maximum Ratings (Ta=25ºC)
Electrical Characteristics
(Ta=25ºC)
Symbol
Ratings
380±50
380±50
6
Unit
V
Symbol
Test Conditions
Ratings
10max
20max
Unit
µA
µA
V
4.2
I
I
V
=
330V
6V
25mA
2V,
V
CBO
CBO
CB
10.0
3.3
2.8
C0.5
V
=
V
CEO
V
EB
EBO
I
C
=
V
EBO
V
330 to 430
1500min
1.5max
V
h
(BR) CEO
I
C
V
C
=
I
C
=
3A
6 (pulse 10)
1
A
FE
CE
V
I
=
4A,
I
B
=
20mA
V
I
B
A
CE (sat)
a
b
P
C
35 (Tc=25ºC)
150
W
ºC
ºC
2.6
Tj
Tstg
–55 to +150
1.35
1.35
0.85
0.45
2.54
2.54
2.2
C
a) Part No.
b) Lot No.
B
E
(Unit: mm)
I
ꢀꢀ C — VCE Characteristics (typ.)
V
— IB Characteristics (typ.)
ꢀꢀIC — VBE Temperature Characteristics (typ.)
ꢀꢀ CE (sat)
(V = 4V)
CE
10
3
10
150mA
120mA
2
1
0
5
5
0
IC = 7A
5A
3A
1A
0
0
2
4
6
0
1.0
2.0
2.4
0.2 0.5
1
5
10
50 100 200
VCE (V)
IB (mA)
VBE (V)
h
ꢀꢀ FE — IC Characteristics (typ.)
h
ꢀꢀ FE — IC Temperature Characteristics (typ.)
j-a — t Characteristics
ꢀꢀꢀꢀ
(V = 2V)
(V = 2V)
CE
CE
10000
5
10000
5000
5000
Typ
1000
500
1000
500
1
0.5
100
50
100
50
10
0.02
20
0.02
0.1
0.1
0.5
1
5
10
1
10
100
1000
0.1
1.0
5
10
0.5
IC (A)
IC (A)
t (ms)
f
ꢀꢀ T — IE Characteristics (typ.)
Safe Operating Area (single pulse)
ꢀꢀPC — Ta Derating
ꢀꢀ
(V = 12V)
CE
40
30
20
10
40
30
20
10
20
10
natural air cooling
Silicone grease
Aluminum heatsink
Unit: mm
Typ
5
1
0.5
Without heatsink
natural air cooling
0.1
0.05
50 •50 •2
Without heatsink
2
0
0
0.01
–0.01
–0.05 –0.1
–0.5 –1
–5
0
25
50
75
100 125
150
1
5
10
50 100
500
IE (A)
VCE (V)
Ta (ºC)
74
Power Transistor 2SD2382
External Dimensions TO220F (full-mold)
Absolute Maximum Ratings (Ta=25ºC)
Electrical Characteristics
(Ta=25ºC)
Symbol
Ratings
Unit
V
Symbol
Test Conditions
Ratings
Unit
µA
µA
V
4.2
V
CBO
V
CEO
V
EBO
65±5
I
I
V =
CB
60V
6V
10max
10max
CBO
10.0
3.3
2.8
C0.5
65±5
V
V
EB
=
EBO
6
V
V
CEO
I
C
=
50mA
60 to 70
700 to 3000
0.15max
1.5max
I
C
±6 (pulse ±10)
1
A
h
FE
V
CE
=
1V,
I
C
=
1A
I
B
A
V
I
=
1.5A,
I
B
=
15mA
V
V
mJ
CE (sat)
FEC
C
a
b
P
C
30 (Tc=25ºC)
150
W
ºC
ºC
V
I
=
6A
2.6
FEC
Es/b
L
=
10mH, single pulse
200min
Tj
Tstg
–55 to +150
1.35
1.35
0.85
Typical Switching Characteristics
V
R
I
V
V
I
I
t
t
t
f
(µs)
CC
(V)
L
(Ω)
C
(A)
BB1
(V)
BB2
(V)
B1
B2
on
(µs)
stg
(µs)
0.45
2.54
2.54
(mA) (mA)
2.2
C
12
12
1
10
–5
30 –30
0.25
0.8
0.35
a) Part No.
b) Lot No.
B
E
(Unit: mm)
I
ꢀꢀ C — VCE Characteristics (typ.)
V
— IB Temperature Characteristics (typ.)
ꢀꢀIC — VBE Temperature Characteristics (typ.)
ꢀꢀ CE (sat)
(I = 1.5A)
C
10
0.75
6
5
4
3
2
1
0
20mA
10mA
30mA
8
0.5
6
Ta=55ºC
25ºC
75ºC
125ºC
Ta= –55ºC
25ºC
5mA
3mA
4
75ºC
125ºC
0.25
2
IB = 1mA
4
0
0
1
0
1
2
3
5
5
10
50 100
400
0
0.5
1.0
1.5
V
CE
(V)
I
B
(mA)
V
BE
(V)
h
ꢀꢀ FE — IC Characteristics (typ.)
h
ꢀꢀ FE — IC Temperature Characteristics (typ.)
j-a — t Characteristics
ꢀꢀꢀꢀ
(V = 1V)
CE
(V = 1V)
CE
5000
5
5000
Typ
1000
500
1000
500
Ta= –55ºC
1
25ºC
75ºC
100
100
125ºC
0.5
0.3
50
30
50
30
0.01
0.05 0.1
0.5
(A)
1
5
10
0.01
0.05 0.1
0.5
(A)
1
5
10
1
5
10
50 100
500 1000
I
C
I
C
t (ms)
f
ꢀꢀ T — IE Characteristics (typ.)
Safe Operating Area (single pulse)
ꢀꢀPC — Ta Derating
ꢀꢀ
(V = 1V)
CE
20
30
30
20
10
0
natural air cooling
Silicone grease
Aluminum heatsink
Unit: mm
10
5
25
20
15
Typ
1
10
5
0.5
Without heatsink
natural air cooling
Without heatsink
0.1
0
1
5
10
(V)
50 100
–0.01 –0.05 –0.1
–0.5 –1
–5 –10
0
50
100
150
I
E
(A)
V
Ta (ºC)
CE
75
Power Transistor 2SD2633
External Dimensions TO220F (full-mold)
Absolute Maximum Ratings
Electrical Characteristics
(Ta=25ºC)
(Ta=25ºC)
Symbol
Ratings
Unit
V
Symbol
CBO
Test Conditions
Ratings
100max
10max
Unit
µA
mA
V
4.2
I
I
V
=200V
V
CBO
200
150
6
CB
V
10.0
3.3
2.8
C0.5
=6V
EB
V
CEO
V
EBO
I =50mA
C
V
EBO
V
150min
2000min
1.5max
2.0max
V
h
CEO
I
C
8
V =2V, I =6A
CE C
A
FE
I
B
1
A
V
I
=6A,
=6A,
I
I
=6mA
=6mA
V
V
CE
BE
(
sat
)
C
B
a
b
35 (T =25ºC)
c
V
I
C
2.6
(sat
)
B
P
C
W
2 (T
a
=25ºC, No Fin)
Tj
150
ºC
ºC
1.35
1.35
0.85
Tstg
–55 to +150
0.45
2.54
2.54
2.2
C
a) Part No.
b) Lot No.
B
E
(Unit: mm)
76
Power Transistor FN812
Absolute Maximum Ratings (Ta=25ºC)
Electrical Characteristics
External Dimensions TO220F (full-mold)
(Ta=25ºC)
Symbol
Test Conditions
Ratings
Unit
µA
µA
V
Symbol
Ratings
Unit
V
4.2
I
I
V
=
120V
6V
50mA
4V,
V
CBO
120
CBO
CB
10max
10max
100min
70min
10.0
3.3
2.8
C0.5
V
=
V
CEO
100
V
EB
EBO
I
C
=
V
EBO
6
8 (pulse 12)
3
V
V
h
CEO
I
C
V
I
=
I
C
=
3A
A
FE
CE
=
4A,
I
B
=
0.4A
V
I
B
A
0.3max
C
V
CE (sat)
a
b
P
C
35 (Tc=25ºC)
150
W
ºC
ºC
2.6
Tj
Typical Switching Characteristics
Tstg
–55 to +150
V
CC
R
I
V
V
I
I
B2
t
t
stg
(µs)
t
f
(µs)
1.35
1.35
0.85
L
(Ω)
C
(A)
BB1
(V)
BB2
(V)
B1
on
(µs)
(V)
(mA) (mA)
12
4
3
10
–5
30 –30
1.0
2.0
0.5
0.45
2.54
2.54
2.2
C
a) Part No.
b) Lot No.
B
E
(Unit: mm)
ꢀꢀIC — VCE Characteristics (typ.)
V
— IB Characteristics (typ.)
ꢀꢀIC — VBE Temperature Characteristics (typ.)
ꢀꢀ CE (sat)
8
6
4
2
0
2
8
6
4
25mA
1
Ic= 3A
Tc= –55ºC
25ºC
Ic= 5A
Ic= 1A
75ºC
125ºC
I
= 10mA
B
2
0
0
5
0
1
2
3
4
10
50 100
(mA)
500 1000 2000
0
0.5
1.0
1.5
V
(V)
I
B
V
BE
(V)
CE
h
ꢀꢀ FE — IC Characteristics (typ.)
h
ꢀꢀ FE — IC Temperature Characteristics (typ.)
j-a — t Characteristics
ꢀꢀꢀꢀ
(V = 4V)
CE
(V = 4V)
CE
500
500
50
Tc=125ºC
10
5
75ºC
25ºC
Typ
Ta= 25ºC
–55ºC
1
100
100
0.5
Single Pulese
50
30
50
30
0.1
0.05
0.0002 0.001
0.01
0.1
1
10
100
0.01
0.05 0.1
0.5
(A)
1
5 8
0.01
0.05 0.1
0.5
1
5
8
I
C
I
C
(A)
t (sec)
f
ꢀꢀ T — IE Characteristics (typ.)
Safe Operating Area (single pulse)
ꢀꢀPC — Ta Derating
ꢀꢀ
(V = 12V)
CE
30
20
40
natural air cooling
Silicone grease
Aluminum heatsink
Unit: mm
10
5
Typ
30
20
10
0
20
10
0
1
0.5
Without heatsink
0.1
–0.01 –0.05 –0.1
–0.5 –1
–5 –10
3
5
10
50
100 200
0
50
100
150
I
E
(A)
V
CE
(V)
Ta (ºC)
77
Power Transistor FP812
External Dimensions TO220F (full-mold)
Absolute Maximum Ratings (Ta=25ºC)
Electrical Characteristics
(Ta=25ºC)
Symbol
Ratings
–120
Unit
V
Symbol
Test Conditions
Ratings
10max
10max
Unit
µA
µA
V
4.2
I
I
V
CB = –120V
EB = –6V
C = –50mA
C = –3A
B = –0.3A
V
CBO
CBO
10.0
3.3
2.8
C0.5
V
V
CEO
–120
V
EBO
I
V
EBO
–6
V
–
120min
70min
V
h
CEO
I
C
V
CE = –4V,
I
–8 (pulse –12)
–3
A
FE
I
C = –3A,
I
V
I
B
A
–0.3max
V
CE (sat)
a
b
2.6
P
35 (Tc=25ºC)
150
W
ºC
ºC
C
Tj
Typical Switching Characteristics
Tstg
–55 to +150
1.35
1.35
0.85
V
CC
R
I
V
V
I
I
B2
t
t
t
f
(µs)
L
(Ω)
C
(A)
BB1
(V)
BB2
(V)
B1
on
(µs)
stg
(µs)
(V)
(mA) (mA)
–12
4
–3
–10
5
–30 30
2.5
0.4
0.6
0.45
2.54
2.54
2.2
C
a) Part No.
b) Lot No.
B
E
(Unit: mm)
I
ꢀꢀ C — VCE Characteristics (typ.)
V
— IB Characteristics (typ.)
Ic= –3A
ꢀꢀIC — VBE Temperature Characteristics (typ.)
ꢀꢀ CE (sat)
(VBE = –4V)
–8
–6
–4
–2
0
–2
–8
–6
–4
Ic= –5A
–50mA
–1
–25mA
Tc= –40ºC
25ºC
Ic= –1A
–2
I
= –10mA
B
75ºC
125ºC
0
0
0
–1
–2
(V)
–3
–4
–5
–10
–50 –100
–500 –1000 –2000
0
–0.5
–1.0
–1.5
V
CE
I
B
(mA)
V
BE
(V)
h
ꢀꢀ FE — IC Characteristics (typ.)
h
ꢀꢀ FE — IC Temperature Characteristics (typ.)
j-a — t Characteristics
ꢀꢀꢀꢀ
(V = –4V)
CE
(V = –4V)
CE
500
500
50
Tc= 125ºC
10
5
Typ
75ºC
25ºC
Tc= 25ºC
1
100
100
–55ºC
0.5
Single Pulese
50
30
50
30
0.1
0.05
–0.01
–0.05 –0.1
–0.5 –1
(A)
C
–5 –8
–0.01
–0.05 –0.1
–0.5 –1
–5 –8
0.0002 0.001
0.01
0.1
1
10
100
I
C
(A)
I
t (sec)
f
ꢀꢀ T — IE Characteristics (typ.)
Safe Operating Area (single pulse)
ꢀꢀPC — Ta Derating
ꢀꢀ
(V = 12V)
CE
–12
–10
40
30
20
10
0
natural air cooling
Silicone grease
Aluminum heatsink
Unit: mm
–5
Typ
30
20
10
0
–1
–0.5
natural air cooling
Without heatsink
Without heatsink
–0.1
–3 –5
–10
–50 –100 –150
0
50
100
150
0.01
0.05 0.1
0.5
(A)
1
5
10
I
E
V
CE
(V)
Ta (ºC)
78
Power Transistor MN611S
External Dimensions TO220S
Absolute Maximum Ratings (Ta=25ºC)
Electrical Characteristics
(Ta=25ºC)
Ratings
typ
Symbol
Ratings
115±10
Unit
V
Symbol
Test Conditions
Unit
min
max
V
CBO
10.2±0.3
V
115±10
I
I
V
=105V
=6V
µA
µA
V
4.44±0.2
V
CEO
CBO
CB
10
10
V
EB
1.3±0.2
V
EBO
6
V
EBO
I =50mA
C
I
C
105
400
115
800
125
1500
0.12
1.5
±6 (pulse ±10)
1
A
V
h
CEO
I
B
A
V
=1V, I =1A
CE C
FE
a
1.6
50 (Tc=25ºC)
1.2 (Ta=25ºC, No Fin)
150
V
V
E
I
=1.2A, I =12mA
B
0.08
1.25
V
V
CE (sat)
C
P
W
C
b
+0.2
I
=6A
FEC
FEC
–0.1
0.1
Tj
L=10mA
45
mJ
ºC
ºC
S/B
1.27±0.2
Tstg
–55 to +150
+0.2
0.4±0.1
–0.1
0.86
1.2±0.2
2.54±0.5
2.54±0.5
a) Part No.
b) Lot No.
(Unit: mm)
79
Power Transistor MN638S
External Dimensions TO220S
Absolute Maximum Ratings (Ta=25ºC)
Electrical Characteristics
(Ta=25ºC)
Symbol
Test Conditions
Ratings
Unit
µA
mA
V
Symbol
Ratings
380±50
380±50
6
Unit
V
I
I
V
=330V
=6V
V
CBO
CBO
CB
10max
20max
4.44±0.2
V
10.2±0.3
V
EB
V
CEO
EBO
1.3±0.2
I =25mA
C
V
EBO
V
330 to 430
1500min
1.5max
V
h
(BR) CEO
I
C
V =2V, I =3A
CE C
6 (pulse 10)
1
A
FE
I
B
A
V
I =4A, I =20mA
C B
V
CE (sat)
a
1.6
P
60 (T =25ºC)
c
150
–55 to +150
W
ºC
ºC
C
b
Tj
0.1+–00..12
Tstg
1.27±0.2
+0.2
0.4±0.1
–0.1
0.86
1.2±0.2
2.54±0.5
2.54±0.5
a) Part No.
b) Lot No.
(Unit: mm)
ꢀꢀIC — VBE Temperature Characteristics (typ.)
V
— IB Characteristics (typ.)
ꢀꢀIC — VCE Characteristics (typ.)
ꢀꢀ CE (sat)
(VBE =4V)
10
3
10
150mA
120mA
2
1
0
5
5
0
IC = 7A
5A
3A
1A
0
0
2
4
6
0
1.0
2.0
2.4
0.2 0.5
1
5
10
50 100 200
VCE (V)
VBE (V)
IB (mA)
h
ꢀꢀ FE — IC Characteristics (typ.)
ꢀꢀhFE — IC Temperature Characteristics (typ.)
•
j-a —t Characteristics
ꢀꢀꢀꢀj-c
(V = 2V)
(V = 2V)
CE
CE
10000
100
10000
5000
5000
Typ
j-a
1000
500
10
1
1000
500
j-c
100
50
100
50
10
0.02
20
0.02
0.1
0.001
0.1
0.5
1
5
10
0.1
1.0
5
10
0.01
0.1
1
10
0.5
IC (A)
t (s)
IC (A)
80
Power Transistor Array STA315A
External Dimensions STA3 (LF400A)
Absolute Maximum Ratings (Ta=25ºC)
Electrical Characteristics
(Ta=25ºC)
Symbol
Ratings
35±5
36±5
6
Unit
V
Symbol
Test Conditions
Ratings
10max
Unit
µA
mA
V
20.2±0.2
I
I
V
=
30V
6V
25mA
V
CBO
CBO
CB
V
=
V
CEO
2.7max
31 to 41
400min
0.2max
0.5max
2.5max
800±120
2.0±0.4
50min
V
EB
EBO
b
I
C
=
V
EBO
V
V
h
CEO
a
I
C
V
=
4V, I
C
=
=
0.7A
5mA
2 (pulse 3
30
*
)
A
FE
CE
I
B
mA
W
W
ºC
ºC
I
C
=
0.5A, I
B
V
V
V
CE (sat)
3 (Ta=25ºC)
13.5 (Tc=25ºC)
150
I
=
1A,
I
= 5mA
2A
C
B
P
T
0.5±0.15
1.0±0.25
7•2.54=17.78±0.25
V
FEC
I
=
V
FEC
(2.54)
Tj
R
R
Ω
B
kΩ
mJ
Tstg
–55 to +150
BE
Es/b
L = 10mH, single pulse
C1.5±0.5
*
PW 1ms, Duty 25%
Typical Switching Characteristics
1
E
2
B
3
C
4
B
5
C
6
B
7
C
8
E
V
R
I
V
V
I
I
t
t
t
f
(µs)
CC
(V)
L
(Ω)
C
(A)
BB1
(V)
BB2
(V)
B1
B2
on
(µs)
stg
(µs)
a) Part No.
b) Lot No.
(mA) (mA)
12
12
1
10
–5
5
0
1.0
8.5
2.5
(Unit: mm)
I
ꢀꢀ C — VCE Characteristics (typ.)
V
— IB Temperature Characteristics
(IC = 0.5A)
V
— IC Temperature Characteristics
IC/IB = 100
ꢀꢀ CE (sat)
ꢀꢀ CE (sat)
0.5
3
2
1
3
2
1
0
8mA
5mA
3mA
2mA
T
= 125ºC
75ºC
a
T
= 125ºC
75ºC
a
0.25
25ºC
–40ºC
25ºC
–40ºC
IB = 1mA
0
1
0
0
10
100
400
0.5
1
5
0
1
2
3
4
5
6
VCE (V)
IB (mA)
IC (A)
h
ꢀꢀ FE — IC Temperature Characteristics
ton•tstg•tf — IC Characteristics (typ.)
j-a — t Characteristics
ꢀꢀꢀꢀ
ꢀꢀ
(VCE = 4V)
3000
50
20
10
5
VCC = 12V
Single pulse
IB = 5mA
–IB = 0A
t
stg
10
5
1000
500
t
f
t
on
T
= 125ºC
a
1
75ºC
25ºC
0.5
100
50
–40ºC
1
0.1
0
0.5
1.0
1.5
2.0
1
10
100
1000
0.01
0.1
0.5
1
4
IC (A)
Ic (A)
t (ms)
Safe Operating Area (single pulse)
P — Ta Derating
ꢀꢀ T
ꢀꢀ
Equivalent Circuit Diagram
(per element)
5
20
3
5
7
1
10
RB
4
6
2
1
0.5
RBE
8
Without heatsink
natural air cooling
0.1
0
1
5
10
50
0
50
100
150
VCE (V)
Ta (ºC)
81
Power Transistor Array STA335A
External Dimensions STA3 (LF400A)
Absolute Maximum Ratings (Ta=25ºC)
Electrical Characteristics
(Ta=25ºC)
Symbol
Ratings
Unit
V
Symbol
Test Conditions
Ratings
10max
10max
35±5
Unit
µA
µA
V
20.2±0.2
I
I
V
=
30V
6V
25mA
V
CBO
35±5
CBO
CB
V
=
V
CEO
35±5
V
EB
EBO
b
I
C
=
V
EBO
6
V
V
h
CEO
a
I
C
V
=
4V, I =
0.5A
5mA
10mH, single pulse
500min
0.5max
150min
3
1
A
FE
CE
C
I
B
A
V
I
=
1A, I =
B
V
CE (sat)
C
2.5 (Ta=25ºC)
12 (Tc=25ºC)
150
Es/b
L
=
mJ
W
W
ºC
ºC
P
T
0.5±0.15
1.0±0.25
7•2.54=17.78±0.25
(2.54)
Tj
Typical Switching Characteristics
Tstg
–55 to +150
V
R
(Ω)
I
V
V
I
I
t
t
t
f
(µs)
CC
(V)
L
C
(A)
BB1
(V)
BB2
(V)
B1
B2
on
stg
(µs)
C1.5±0.5
(mA) (mA)
(µs)
12
12
1
10
–5
5
5
1.3
4.7
1.2
1
2
3
4
5
6
7
8
C
B
E
E
B
C
a) Part No.
b) Lot No.
(Unit: mm)
I
ꢀꢀ C — VCE Characteristics (typ.)
V
— IB Temperature Characteristics
ꢀꢀIC — VBE Temperature Characteristics (typ.)
ꢀꢀ CE (sat)
(IC = 1A)
1
4
3
2
1
0
5mA
4mA
VCE = 4V
3
2
1
0
3mA
2mA
0.5
T
= 125ºC
75ºC
a
IB=1mA
25ºC
–55ºC
T
= –55ºC
25ºC
75ºC
a
125ºC
0
0.002
0.01
0.05 0.1
0.4
0
0.5
1.0
1.5
0
1
2
3
VCE (V)
IB (A)
VBE (V)
h
ꢀꢀ FE — IC Temperature Characteristics (typ.)
ton•tstg•tf — IC Characteristics (typ.)
j-a — t Characteristics
ꢀꢀꢀꢀ
ꢀꢀ
(VCE = 4V)
5000
20
10
5
20
10
5
t
stg
Single pulse
VCE = 12V
IB1 = –IB2 = 5mA
1000
500
1
T
= 125ºC
75ºC
a
t
f
0.5
1
25ºC
0.5
t
on
–55ºC
0.3
0.05
100
0.1
0.1
0.01
0.05 0.1
0.5
1
3
0.1
0.5
1
5
1
10
100
1000 5000
IC (A)
Ic (A)
t (ms)
Safe Operating Area (single pulse)
P — Ta Derating
ꢀꢀ T
ꢀꢀ
Equivalent Circuit Diagram
(per element)
10
15
5
2
7
5
10
5
1
3
6
0.5
0.2
4
0
2
5
10
50
0
50
100
150
VCE (V)
T
a
(ºC)
82
Power Transistor Array STA415A
Absolute Maximum Ratings (Ta=25ºC)
Electrical Characteristics
External Dimensions STA4 (LF412)
(Ta=25ºC)
Symbol
Ratings
35±5
36±5
6
Unit
V
Symbol
Test Conditions
Ratings
10max
Unit
µA
mA
V
CBO
CB
25.25±0.2
I
I
V
=
30V
6V
25mA
V
CBO
V
=
V
CEO
2.7max
31 to 41
400min
0.2max
0.5max
2.5max
800±120
2.0±0.4
50min
V
EB
EBO
b
I
C
=
V
EBO
V
V
h
CEO
a
I
C
V
=
4V, I
C
=
=
0.7A
5mA
2 (pulse 3
30
*
)
A
FE
CE
I
B
mA
W
W
ºC
ºC
I
C
=
0.5A, I
B
V
V
V
CE (sat)
4 (Ta
=
=
25ºC)
25ºC)
I
=
1A,
I
= 5mA
2A
C
B
P
T
(2.54)
1.0±0.25
0.5±0.15
18 (Tc
V
FEC
I
=
V
FEC
0±0.3
9 • 2.54=22.86±0.05
0±0.3
Tj
150
–55 to +150
R
R
Ω
B
kΩ
mJ
Tstg
BE
C1.5±0.5
Es/b
L = 10mH, single pulse
*
PW 1ms, Duty 25%
1
E
2
B
3
C
4
B
5
C
6
B
7
C
8
B
9
C
10
E
Typical Switching Characteristics
V
R
I
V
V
I
I
t
t
t
f
CC
(V)
L
(Ω)
C
(A)
BB1
(V)
BB2
(V)
B1
B2
on
(µs)
stg
(µs)
a) Part No.
b) Lot No.
(mA) (mA)
(µs)
12
12
1
10
–5
5
0
1.0
8.5
2.5
(Unit: mm)
I
ꢀꢀ C — VCE Characteristics (typ.)
V
— IB Temperature Characteristics
V
— IC Temperature Characteristics
ꢀꢀ CE (sat)
ꢀꢀ CE (sat)
(IC = 0.5A)
0.5
3
2
1
3
2
1
0
8mA
5mA
IC/IB = 100
3mA
2mA
T
= 125ºC
75ºC
a
T
= 125ºC
75ºC
a
0.25
25ºC
–40ºC
25ºC
–40ºC
IB = 1mA
0
1
0
0
10
100
400
0.5
1
5
0
1
2
3
4
5
6
VCE (V)
IB (mA)
IC (A)
h
ꢀꢀ FE — IC Temperature Characteristics
t
t
t — IC Characteristics (typ.)
j-a — t Characteristics
ꢀꢀꢀꢀ
ꢀꢀ on• stg• f
(VCE = 4V)
3000
50
20
10
5
VCC = 12V
Single pulse
IB = 5mA
–IB = 0A
t
stg
10
5
1000
500
t
f
t
on
T
= 125ºC
a
1
75ºC
25ºC
0.5
100
50
–40ºC
1
0.1
0
0.5
1.0
1.5
2.0
1
10
100
1000
0.01
0.1
0.5
1
4
IC (A)
Ic (A)
t (ms)
Safe Operating Area (single pulse)
P — Ta Derating
ꢀꢀ T
ꢀꢀ
Equivalent Circuit Diagram
(per element)
20
5
3
5
7
9
1
10
RB
4
6
8
2
1
0.5
RBE
10
Without heatsink
natural air cooling
0.1
0
1
5
10
50
0
50
100
150
VCE (V)
Ta (ºC)
83
Power Transistor Array STA461C
Absolute Maximum Ratings (Ta=25ºC)
Electrical Characteristics
External Dimensions STA4 (LF400B)
(Ta=25ºC)
Symbol
Ratings
Unit
V
Symbol
Test Conditions
Ratings
10max
10max
Unit
µA
µA
V
25.25±0.2
I
I
V
=
60V
6V
50mA
V
CBO
65±5
CBO
CB
V
=
V
CEO
65±5
V
EB
EBO
I
C
=
b
V
EBO
6
V
60 to 70
400 to 1500
0.15max
1.5max
V
h
CEO
a
I
C
V
CE
=
1V,
I
C
=
1A
±6 (pulse ±10)
A
FE
I
B
1
A
V
I
=
1.5A,
I
B
=
15mA
V
V
CE (sat)
C
3.2 (Ta
18 (Tc
=
=
25ºC)
25ºC)
V
FEC
I
=
6A
W
W
ºC
ºC
FEC
P
T
Es/b
L
=
10mH, single pulse
80min
mJ
(2.54)
1.0±0.25
0.5±0.15
Tj
150
–55 to +150
9•2.54=22.86±0.05
Tstg
Typical Switching Characteristics
C1.5±0.5±
V
R
I
V
V
I
I
t
t
t
f
(µs)
CC
(V)
L
(Ω)
C
(A)
BB1
(V)
BB2
(V)
B1
B2
on
(µs)
stg
(µs)
(mA) (mA)
12
12
1
10
–5
30 –30
0.2
3.9
0.2
1
2
B
3
C
4
E
5
6
7
B
8
C
9
E
10
a) Part No.
b) Lot No.
(Unit: mm)
I
ꢀꢀ C — VCE Characteristics (typ.)
I — VBE Temperature Characteristics (typ.)
ꢀꢀ
C
V
— IC Temperature Characteristics (typ.)
ꢀꢀ CE (sat)
(VCE = 1V)
7
6
5
4
3
2
1
0.75
6
30mA
20mA
IC/IB = 100
5
4
10mA
0.5
T
= 125ºC
75ºC
a
T
= –55ºC
25ºC
5mA
3mA
a
3
2
25ºC
–55ºC
75ºC
125ºC
0.25
IB = 1mA
4
1
0
0
0
0
0.5
1.0
1.5
0
1
2
3
5
0.01
0.1
1
10
VBE (V)
VCE (V)
IC (A)
h
ꢀꢀ FE — IC Temperature Characteristics (typ.)
ton•tstg•tf — IC Characteristics
ꢀꢀ
j-a — t Characteristics
ꢀꢀꢀꢀ
(VCE = 1V)
10
5
2000
1000
500
5
Single pulse
t
stg
VCC = 12V
IB1 = –IB2 = 30mA
1
1
T
= 125ºC
75ºC
a
0.5
0.5
25ºC
–55ºC
t
f
100
50
0.1
t
on
0.1
0.05
0
1
2
3
0.1
1
10
100
2000
0.01
0.1
1
10
Ic (A)
t (ms)
IC (A)
P — Ta Derating
ꢀꢀSafe Operating Area (single pulse)
ꢀꢀ T
Equivalent Circuit Diagram
20
20
15
10
5
10
5
3
8
1
2
7
0.5
Without heatsink
natural air cooling
4
9
0.1
0
1
5
10
50
100
0
50
100
150
VCE (V)
Ta (ºC)
84
Power Transistor Array STA463C
Absolute Maximum Ratings (Ta=25ºC)
Electrical Characteristics
External Dimensions STA4 (LF400B)
(Ta=25ºC)
Symbol
Ratings
115±10
Unit
V
Symbol
Test Conditions
Ratings
10max
10max
Unit
µA
µA
V
25.25±0.2
I
I
V
=
105V
6V
50mA
V
CBO
CBO
CB
V
=
V
CEO
115±10
V
EB
EBO
I
C
=
b
V
EBO
6
V
105 to 125
400 to 1500
0.12max
1.5max
V
h
CEO
a
I
C
V
CE
=
1V,
I
C
=
1A
±6 (pulse ±10)
1
A
FE
I
B
A
V
I
=
1.2A,
I
B
=
12mA
V
V
CE (sat)
C
3.2 (Ta=250ºC)
18 (Tc=25ºC)
150
V
FEC
I
=
6A
W
W
ºC
ºC
FEC
P
T
Es/b
L
=
10mH, single pulse
45min
mJ
(2.54)
1.0±0.25
0.5±0.15
Tj
9•2.54=22.86±0.05
Tstg
–55 to +150
Typical Switching Characteristics
C1.5±0.5
V
R
I
V
V
I
I
t
t
t
f
(µs)
CC
(V)
L
(Ω)
C
(A)
BB1
(V)
BB2
(V)
B1
B2
on
(µs)
stg
(µs)
(mA) (mA)
12
12
1
10
–5
30 –30
0.2
5.7
0.4
1
2
B
3
C
4
E
5
6
7
B
8
C
9
E
10
a) Part No.
b) Lot No.
(Unit: mm)
I
— V Characteristics (typ.)
I
— V Temperature Characteristics (typ.)
ꢀꢀ C
CE
V
— I Temperature Characteristics (typ.)
ꢀꢀ C
BE
ꢀꢀ CE (sat)
C
(VCE = 1V)
0.75
7
8
7
6
5
IC/IB = 100
30mA
20mA
10mA
6
T
= 150ºC
75ºC
a
5
0.5
25ºC
–55ºC
4
3
2
T
= –55ºC
25ºC
a
5mA
4
3
2
1
0
75ºC
150ºC
3mA
0.25
1
0
IB = 1mA
5
0
0
0.5
1.0
1.5
0.01
0.1
1
5
0
1
2
3
4
6
VBE (V)
IC (A)
VCE (V)
ton•tstg•tf — IC Characteristics
h
— I Temperature Characteristics (typ.)
ꢀꢀ
j-a — t Characteristics
ꢀꢀꢀꢀ
ꢀꢀ FE
C
(VCE = 4V)
100
50
10
5
2000
1000
500
Dual
Single pulse
transistor
operated
t
stg
Single
transistor
operated
10
5
T
= 150ºC
75ºC
a
1
0.5
1
25ºC
–55ºC
100
0.5
VCC = 12V
t
f
IB1= –IB2 = 30mA
50
30
0.01
t
on
0.1
0.1
0.0001 0.001
0.01
0.1
1
10
100
1000
0
1
2
3
0.1
1
10
t (s)
Ic (A)
IC (A)
V
— I Temperature Characteristics (typ.)
P — Ta Derating
ꢀꢀ
T
ꢀꢀ CE (sat)
B
Equivalent Circuit Diagram
(Tc= 25ºC)
20
15
10
5
0.75
IC = 1.2A
3
8
0.5
T
= 150ºC
75ºC
a
2
7
25ºC
–55ºC
0.25
4
9
0
0
1
0
50
100
150
10
100
1000
T
a
(ºC)
IB (mA)
85
Power Transistor Array STA464C
Absolute Maximum Ratings (Ta=25ºC)
Electrical Characteristics
External Dimensions STA4
(Ta=25ºC)
Symbol
Ratings
65±5
Unit
V
Ratings
typ
Symbol
Test Conditions
Unit
25.25±0.2
min
max
V
CBO
I
I
V
=
60V
µA
µA
V
V
65±5
V
CEO
CBO
CB
10
10
V =6V
EB
b
V
EBO
6
V
EBO
a
I
C
=50mA
I
C
60
65
800
70
6 (pulse 10)
1
A
V
CEO
I
B
A
h
V
=
CE
1V, I =1A
400
1500
0.15
1.5
FE
C
20 (Tc=25ºC)
4 (Ta=25ºC)
150
V
V
I
=
C
1.5A, I =15mA
0.09
1.25
V
V
CE (sat)
B
P
C
W
(2.54)
1.0±0.25
0.5±0.15
I
=6A
FEC
FEC
Tj
Es/b
L
=
10mH
80
mJ
ºC
ºC
9•2.54=(22.86)±0.05
Tstg
(Root dimension)
–55 to +150
C1.5±0.5
1
E
2
B
3
C
4
B
5
C
6
B
7
C
8
B
9
C
10
E
a) Part No.
b) Lot No.
(Unit: mm)
Equivalent Circuit Diagram
3
5
7
9
2
1
4
6
8
10
86
Power Transistor Array SLA8004
Absolute Maximum Ratings (Ta=25ºC)
Electrical Characteristics
External Dimensions SLA (LF817)
(Ta=25ºC)
Unit
Ratings
NPN
PNP
Test Conditions
CB = –55V
EB = –6V
C = –25mA
Symbol
Unit
Symbol
NPN
60
60
6
PNP
–55
–55
–6
Test Conditions
60V
6V
= 25mA
Ratings
Ratings
31±0.2
24.4±0.2
16.4±0.2
3.2±0.15 •3.8
I
I
V
=
V
µA
V
CBO
V
V
CBO
CB
100max
60max
60min
–100max
4.8±0.2
1.7±0.1
V
=
V
V
CEO
–60max
–55min
80min
mA
V
EB
EBO
I
C
I
V
EBO
V
V
h
CEO
3.2±0.15
I
12
3
V
=
1V, I =
C
3A
150min
VCE = –1V, IC = –3A
–12
–3
A
C
FE
CE
2.45±0.2
(Root dimension)
4–(R1)
a
I
B
A
V
I
C
=
6A, I =
0.3A 0.35max
10A 2.5max
IC = –6A, IB = –0.3A –0.35max
10A 2.5max
V
V
CE (sat)
B
b
1.2±0.15
5 (Tc=25ºC, No Fin)
40 (Tc=25ºC)
150
V
FEC
I
=
I
=
W
W
ºC
ºC
FEC
FEC
R-end
P
T
0.55+–00..21
4±0.7
+0.2
–0.1
0.85
1.45±0.15
Tj
11• P2.54±0.1= (27.94)
Tstg
–55 to +150
(Root dimension)
31.3±0.2
I
ꢀꢀ C — VCE Characteristics (typ.)
ꢀꢀIC — VCE Characteristics (typ.)
(PNP)
(NPN)
1
2 3 4 5 6 7 8 9 10 1112
–12
–10
–8
–6
–4
–2
0
12
10
8
a) Part No.
b) Lot No.
(Unit: mm)
60mA
40mA
6
20mA
4
–20mA
I
= 10mA
B
–10mA
2
0
0
–1
–2
–3
–4
–5
–6
0
2
4
6
VCE (V)
VCE (V)
h
ꢀꢀ FE — IC Characteristics (typ.)
h
ꢀꢀ FE — IC Characteristics (typ.)
(V = –1V) (PNP)
(V = 1V) (NPN)
CE
CE
400
300
Typ
Typ
100
100
50
10
2
10
5
3
0.02
0.1
1
10 12
–0.02
–0.1
–1
–10
–12
IC (A)
IC (A)
h
ꢀꢀ FE — IC Temperature Characteristics (typ.)
h
ꢀꢀ FE — IC Temperature Characteristics (typ.)
(V = –1V) (PNP)
(V = 1V) (NPN)
CE
CE
400
300
125ºC
25ºC
–
30ºC
100
100
50
10
2
10
5
3
0.02
0.1
1
1012
–0.02
–0.1
–1
–10
–12
IC (A)
IC (A)
— IB Characteristics (typ.)
V
V
— IB Characteristics (typ.)
ꢀꢀ CE (sat)
ꢀꢀ CE (sat)
Equivalent Circuit Diagram
(PNP)
(NPN)
–1.4
1.3
4
8
1.0
–1.0
–0.5
0
R2
IC = –12A
9
5
–9A
–6A
R1: 500Ω Typ.
R2: 500Ω Typ.
3
6
7
10
0.5
–3A
–1A
12A
2
12
R1
1
11
0
5
–7–10
–100
–1000 –3000
10
100
1000 3000
IB (mA)
IB (mA)
87
Surface-mount Power Transistor Array SDA03
Absolute Maximum Ratings (Ta=25ºC)
External Dimensions SMD-16A
Electrical Characteristics
(Ta=25ºC)
Symbol
Ratings
–60
Unit
V
Symbol
CBO
Test Conditions
CB = –60V
EB = –6V
C = –25mA
CE = –4V, C = –2A
C = –2A, B = –0.1A
Ratings
–10max
–10max
–60min
100min
–0.4max
Unit
µA
µA
V
I
I
V
V
CBO
V
CEO
–60
2.54±0.25
0.89±0.15
0.75+–00..1055
V
V
EBO
0.25
I
V
EBO
–6
V
V
h
CEO
16
9
I
C
V
I
–6 (pulse –12)
–1
A
FE
a
I
I
V
I
B
A
V
CE (sat)
b
P
3 (No Fin)
150
W
ºC
ºC
T
Tj
+0.15
–0.05
Pin 1
8
0.3
Typical Switching Characteristics
20.0max
19.56±0.2
Tstg
–55 to +150
V
CC
R
I
V
V
I
I
B2
t
t
t
f
(µs)
L
(Ω)
C
(A)
BB1
(V)
BB2
(V)
B1
on
(µs)
stg
(µs)
(V)
(mA) (mA)
–12
12
–1
–10
5
–50 50
0.4
1.75
0.22
a) Part No.
b) Lot No.
(Unit: mm)
I
ꢀꢀ C — VCE Characteristics
V
— IC Temperature Characteristics (typ.)
ꢀꢀIC — VBE Temperature Characteristics (typ.)
ꢀꢀ CE (sat)
(VCE = –4V)
–3
–6
–6
–5
–4
–3
–2
–1
0
–100mA
–50mA
–200mA
IC/IB = 20
–5
–30mA
–20mA
T
= 150ºC
75ºC
a
–4
–3
–2
–1
0
–2
–1
T
= 150ºC
75ºC
a
25ºC
–55ºC
25ºC
–55ºC
–10mA
IB = –5mA
0
–0.05
–0.1
–1
–10
0
–0.5
–1.0
–1.5
0
–1
–2
–3
–4
–5
IC (A)
VBE (V)
VCE (V)
ꢀꢀhFE — IC Temperature Characteristics
ton•tstg•tf — IC Characteristics
ꢀꢀ
Ta= 25ºC
Single pulse
j-a — t Characteristics
ꢀꢀꢀꢀ
50
1000
5
VCE = –4V
t
on
500
10
5
1
VCC = 12V
IB1 = –IB2 = 50mA
t
f
0.5
100
T
= 150ºC
a
75ºC
1
t
stg
25ºC
50
30
0.1
–55ºC
0.05
–0.5 –0.1
0.3
0.001
–0.01
–0.1
–1
–10
0.01
0.1
1
2
–0.5 –1
–5 –10
IC (A)
t (s)
IC (A)
Safe Operating Area (single pulse)
ꢀꢀ
P — Ta Derating
ꢀꢀ T
Equivalent Circuit Diagram
–20
4
–10
3
2
1
Without heatsink
16
14
12
10
15
13
11
9
–1
–0.5
2
4
6
8
natural air cooling
Without heatsink
–0.1
0
–3
–5
–10
–50
–100
0
50
100
150
VCE (V)
Ta (ºC)
88
Surface-mount Power Transistor Array SDA04
Electrical Characteristics
External Dimensions SMD-16A
Absolute Maximum Ratings (Ta=25ºC)
(Ta=25ºC)
Symbol
Ratings
–60
Unit
V
Symbol
CBO
Test Conditions
CB = –60V
EB = –6V
C = –25mA
CE = –4V, C = –2A
C = –2A, B = –0.1A
Ratings
–10max
–10max
–60min
100min
–0.4max
Unit
µA
µA
V
I
I
V
V
CBO
V
2.54±0.25
0.89±0.15
0.75+–00..0155
V
V
CEO
–60
EBO
0.25
I
V
EBO
–6
V
V
h
CEO
16
9
I
C
V
I
–6 (pulse –12)
–1
A
FE
a
I
I
V
I
B
A
V
CE (sat)
b
P
2.5 (No Fin)
150
W
ºC
ºC
T
Tj
+0.15
–0.05
0.3
Pin 1
8
Typical Switching Characteristics
20.0max
19.56±0.2
Tstg
–55 to +150
V
CC
R
I
V
V
I
I
B2
t
t
t
f
(µs)
L
(Ω)
C
(A)
BB1
(V)
BB2
(V)
B1
on
(µs)
stg
(µs)
(V)
(mA) (mA)
–12
12
–1
–10
5
–50 50
0.4
1.75
0.22
a) Part No.
b) Lot No.
(Unit: mm)
I
ꢀꢀ C — VCE Characteristics
V
— IC Temperature Characteristics (typ.)
ꢀꢀIC — VBE Temperature Characteristics (typ.)
ꢀꢀ CE (sat)
(VCE = –4V)
–3
–6
–6
–5
–4
–3
–2
–1
0
–100mA
–50mA
–200mA
IC/IB = 20
–5
–30mA
–20mA
T
= 150ºC
75ºC
a
–4
–3
–2
–1
0
–2
–1
T
= 150ºC
75ºC
a
25ºC
–55ºC
25ºC
–55ºC
–10mA
IB = –5mA
0
–0.05
–0.1
–1
–10
0
–0.5
–1.0
–1.5
0
–1
–2
–3
–4
–5
IC (A)
VBE (V)
VCE (V)
h
— I Temperature Characteristics
ꢀꢀ FE
C
ton•tstg•tf — IC Characteristics
ꢀꢀ
Ta= 25ºC
Single pulse
j-a — t Characteristics
ꢀꢀꢀꢀ
50
1000
5
VCE = –4V
t
on
500
10
5
1
VCC = 12V
IB1 = –IB2 = 50mA
t
f
0.5
100
T
= 150ºC
a
75ºC
1
t
stg
25ºC
50
30
0.1
–55ºC
0.05
–0.5 –0.1
0.3
0.001
–0.01
–0.1
–1
–10
0.01
0.1
1
2
–0.5 –1
–5 –10
IC (A)
t (s)
IC (A)
Safe Operating Area (single pulse)
ꢀꢀ
P — Ta Derating
ꢀꢀ T
Equivalent Circuit Diagram
–20
4
–10
3
2
1
Without heatsink
16
10
15
9
–1
–0.5
2
8
natural air cooling
Without heatsink
–0.1
0
–3
–5
–10
–50
–100
0
50
100
150
VCE (V)
Ta (ºC)
89
Surface-mount Power Transistor Array SDC09
Absolute Maximum Ratings
Electrical Characteristics
External Dimensions SMD-16A
(Ta=25ºC)
(Ta=25ºC)
Symbol
Ratings
Unit
V
Symbol
Test Conditions
Ratings
10max
10max
Unit
µA
µA
V
I
I
V
=
60V
6V
50mA
V
CBO
65±5
CBO
CB
EBO
2.54±0.25
0.89±0.15
0.75+–00..1055
V
=
V
CEO
65±5
V
EB
0.25
I
C
=
V
EBO
6
V
60 to 70
400 to 1500
0.15max
1.5max
V
h
CEO
16
9
I
C
V
CE
=
1V,
I
C
=
1A
6 (pulse 10
*
)
A
FE
a
I
B
1
2.8
A
V
I
=
1.5A,
I
B
=
15mA
V
V
CE (sat)
C
b
P
T
V
FEC
I
=
6A
W
ºC
ºC
FEC
Tj
150
Es/b
L
=
10mH, single pulse
80min
mJ
+0.15
–0.05
Pin 1
8
0.3
20.0max
19.56±0.2
Tstg
–55 to +150
*
PW 100µs, Duty 1%
a) Part No.
b) Lot No.
(Unit: mm)
I
ꢀꢀ C — VCE Characteristics
V
— IC Temperature Characteristics (typ.)
ꢀꢀIC — VBE Temperature Characteristics (typ.)
ꢀꢀ CE (sat)
(VCE = 4V)
8
0.7
6
IC/IB=100
7
6
IB=
0.6
0.5
0.4
0.3
0.2
0.1
5
30mA
20mA
T
150ºC
a=
4
3
2
1
0
5
4
3
2
1
100ºC
75ºC
25ºC
10mA
T
150ºC
100ºC
75ºC
25ºC
–55ºC
a=
5mA
–55ºC
3mA
1mA
0
0
0.0001
0.001
0.01
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
IC (A)
VBE (V)
VCE (V)
Use substrate
42•31•1m
Single pulse
h
— I Temperature Characteristics
ton•tstg•tf — IC Characteristics
ꢀꢀ
ꢀꢀ FE
C
j-a — t Characteristics
ꢀꢀꢀꢀ
10
5000
10
VCE=1V
t
stg
1000
VCC=12V
IB1=–IB2=30mA
t
on
1
1
t
f
T
150ºC
a=
100ºC
75ºC
25ºC
100
50
0.1
–55ºC
0.05
0.1
0.01
0.1
1
10
0.1
1
10
100
1000
0
0.5
1.0
1.5
2.0
2.5
3.0
IC (A)
t (ms)
IC (A)
Safe Operating Area (single pulse)
P — Ta Derating
ꢀꢀ T
ꢀꢀ
Equivalent Circuit Diagram
Ta=25ºC
20
10
6
50•50•1.6mm
Use substrate
5
0.5
ms
5
1
3
4
13 15 16
5
6
8
9
10 12
42•31•1.0mm
Use substrate
1ms
3
2
1
1
14
11
0.5
10ms
0.1
2
7
0.05
0
0.5
1
5
10
50 100
–50
0
50
100
150
VCE (V)
T
a
(ºC)
90
Surface-mount Power Transistor Array SPF0001
Absolute Maximum Ratings
Electrical Characteristics
External Dimensions SMD-16A
(Ta=25ºC)
(Ta=25ºC)
Ratings
typ
Symbol
Ratings
115±10
115±10
6
Unit
V
Symbol
Test Conditions
Unit
min
max
V
CBO
14.74±0.2
13.04±0.2
+0.1
V
CEO
I
I
V
=105V
=6V
µA
µA
V
V
–0.05
CBO
CB
10
10
1.0
Fin
thickness
20
11
V
EB
V
EBO
V
EBO
I =50mA
C
I
C
105
400
115
800
125
1500
0.12
1.5
±6 (pulse ±10)
1
A
V
CEO
I
B
A
h
FE
V =1V, I =1A
CE C
a
*
P
T
2.5 (Ta=25ºC)
150
V
V
I
=1.2A,
C
I =12mA
B
0.08
1.25
V
V
W
ºC
ºC
CE (sat)
b
Tj
Tstg
I
=6A
FEC
FEC
Es/b
L=10mH
45
mJ
–55 to +150
1
10
0.4+–00..0155
1.27±0.25
+0.15
–0.05
*
Use glass epoxy substrate (FR4) 70mm •100mm•1.6mm
0.25
(11.43)
4-( 0.8)
1
10
F1
F2
a) Part No.
b) Lot No.
20
11
(2.4)
(13.54)
(Unit: mm)
Equivalent Circuit Diagram
F1
F2
3
8
18,19
12,13
91
MOS FET 2SK2701
External Dimensions FM20 (full-mold)
Absolute Maximum Ratings (Ta=25ºC)
Electrical Characteristics
(Ta=25ºC)
Symbol
Ratings
450
Unit
V
Ratings
typ
Symbol
Test Conditions
Unit
min
450
max
V
DSS
4.2±0.2
2.8
10.0±0.2
3.3±0.2
V
GSS
±30
V
I
D
=
100µA,
V
GS
=
0V
V
(BR) DSS
V
C0.5
V
GS = ±30V
I
I
±7
I
I
±100
100
4.0
nA
µA
D
A
GSS
1
±28
V
=
450V,
V
D
=
0V
*
A
DS
GS
D (pulse)
DSS
P
V
S
V
V
=
=
=
10V,
20V,
10V,
I
=
=
=
1mA
3.5A
3.5A
2.0
3.5
3.0
5
T
35 (Tc=25ºC)
W
mJ
A
TH
DS
DS
DS
2
a
b
E
I
*
130
R
R
V
I
D
D
AS
e (yfs
)
Ω
7
150
V
I
0.84
720
150
65
1.10
AS
DS (ON)
1.35±0.15
T
ºC
ºC
pF
pF
pF
ns
ns
ns
ns
V
ch
Ciss
Coss
Crss
1.35±0.15
+0.2
V
f
=
10V
1.0MHz
0V
DS
Tstg
=
V
–55 to +150
–0.1
0.85
=
GS
*
*
1
2
PW 100µs, duty 1%
VDD 30V, 5mH, IL 7A, unclamped, RG = 50Ω
d (on)
2.54
2.54 0.45+–00..21
2.4±0.2
=
L
=
=
t
25
I
V
R
V
= 3.5A
D
2.2±0.2
t
r
40
=
200V
DD
=
57Ω
L
t
t
70
d (off)
f
= 10V
GS
50
a) Part No.
b) Lot No.
G
D S
V
I
SD
=
7A,
V =
GS
0V
1.0
1.5
SD
(Unit: mm)
ꢀꢀID — VDS Characteristics
ꢀꢀID — VGS Characteristics
ꢀꢀRDS (ON) — ID Characteristics
1.0
0.8
0.6
0.4
7
6
5
4
3
2
7
6
5
4
VGS = 10V
VDS = 20V
10V
5.5V
5V
3
2
1
0
VGS = 4.5V
TC = –55ºC
25ºC
125ºC
0.2
0
1
0
0
2
4
6
8
0
1
2
3
4
5
6
7
0
5
10
15
20
Gate-source voltage VGS (V)
Drain current ID (A)
Drain-source voltage VDS (V)
R
— ID Characteristics
V
— VGS Characteristics
R
— TC Characteristics
ꢀꢀ e (yfs)
ꢀꢀ DS
ꢀꢀ DS (ON)
10
10
2.5
VDS = 20V
ID = 3.5A
VGS = 10V
TC = –55ºC
5
8
6
2.0
1.5
1.0
25ºC
ID = 7A
125ºC
1
4
2
ID = 3.5A
0.5
0.5
0
4
0.2
0.05 0.1
0
5
10
20
0.5
1
5
7
150
–50
0
50
100
Gate-source voltage VGS (V)
Drain current ID (A)
Case temperature Tc (ºC)
Capacitance— VDS Characteristics
I
ꢀꢀ DR — VSD Characteristics
Safe Operating Area (single pulse)
P
— T Derating
ꢀꢀ
ꢀꢀ
ꢀꢀ D
a
(Tc=25ºC)
2000
7
6
5
4
3
2
1
0
50
40
30
20
10
0
ID (pulse) max
VGS = 0V
f= 1MHz
1000
500
10
5
ID max
Ciss
1
VGS = 0V
5V, 10V
100
50
0.5
Coss
Crss
40
0.1
Without heatsink
20
0.05
0
10
20
30
50
0
0.2
0.4
0.6
0.8
1.0
0
50
100
150
3
5
10
50 100
500
Drain-source voltage VDS (V)
Source-drain voltage VSD (V)
Drain-source voltage VDS (V)
Ambient temperature
T (ºC)
a
92
MOS FET FKV460 (under development)
Absolute Maximum Ratings
Electrical Characteristics
External Dimensions TO220F (full-mold)
(Ta=25ºC)
(Ta=25ºC)
Symbol
Ratings
40
Unit
V
Ratings
typ
Symbol
Test Conditions
Unit
V
min
40
max
V
DSS
4.2±0.2
2.8
10.0±0.2
3.3±0.2
V
GSS
+20, –10
±60
V
I
=
100µA, V =
GS
0V
V
(BR) DSS
D
C0.5
V
V
=
GS = +20V
I
I
A
+10
–5
D
I
µA
GSS
±180
GS = –10V
40V, V
*
A
D (pulse)
µA
V
V
=
0V
P
T
DS
GS
100
2.3
40 (Tc=25ºC)
150
W
ºC
ºC
I
D
DSS
a
b
V
TH
V
=
10V, I =
D
250µA
1.3
20
ch
DS
Tstg
R
R
V
=
10V, I
=
D
25A
25A
S
–55 to +150
e (yfs)
DS
GS
1.35±0.15
1.35±0.15
0.85+–00..21
V
=
10V, I
=
D
6
9
mΩ
pF
pF
pF
ns
ns
ns
ns
V
*
PW 100µs, duty 1%
DS (ON)
2000
1200
200
Ciss
Coss
Crss
V
=
10V
1.0MHz
0V
DS
f
=
2.54 0.45+–00..21
2.4±0.2
V
=
GS
2.54
2.2±0.2
t
t
t
t
d (on)
I
=
25A
12V
D
V
DD
r
To be
defined
R
L
=
0.48Ω
d (off)
f
a) Part No.
b) Lot No.
G
D S
V
GS
= 10V
(Unit: mm)
V
SD
I
=
50A, V =
GS
0V
1.0
1.5
SD
93
MOS FET FKV460S
External Dimensions TO220S
Absolute Maximum Ratings (Ta=25ºC)
Electrical Characteristics
(Ta=25ºC)
Symbol
Ratings
40
Unit
V
Ratings
typ
Symbol
Test Conditions
Unit
min
40
max
V
DSS
4.44±0.2
V
I
D
=
100µA,
V
GS
=
0V
10.2±0.3
V
GSS
+20, –10
±60
V
(BR) DSS
V
1.3±0.2
VGS = +20V
I
I
A
+10
–5
D
I
µA
GSS
±180
VGS = –10V
*
A
D (pulse)
µA
V
V
=
40V,
V
GS
=
0V
P
T
DS
100
2.3
60 (Tc=25ºC)
150
W
ºC
ºC
I
D
DSS
a
1.6
V
V
DS
=
10V, I =
D
250µA
1.3
ch
TH
b
+0.2
Tstg
R
R
V
=
10V, I =
D
25A
25A
20.0
S
–55 to +150
e (yfs)
DS
GS
–0.1
0.1
V
=
10V, I =
D
7
2800
1400
600
20
9
mΩ
pF
pF
pF
ns
ns
ns
ns
V
*
PW 100µs, duty 1%
DS (ON)
1.27±0.2
Ciss
Coss
Crss
V
f
=
10V
1.0MHz
0V
DS
+0.2
0.4±0.1
0.86
–0.1
=
V
1.2±0.2
2.54±0.5
=
GS
2.54±0.5
t
t
t
t
d (on)
I
D
= 25A
600
250
100
1.0
V
R
V
=
12V
r
DD
=
0.48Ω
L
d (off)
f
a) Part No.
b) Lot No.
=
10V
GS
(Unit: mm)
1.5
V
I
SD
=
50A,
V
GS
=
0V
SD
94
MOS FET FKV560
Absolute Maximum Ratings (Ta=25ºC)
Electrical Characteristics
External Dimensions TO220F (full-mold)
(Ta=25ºC)
Symbol
Ratings
50
Unit
V
Ratings
typ
Symbol
Test Conditions
Unit
min
50
max
V
DSS
4.2±0.2
2.8
10.0±0.2
3.3±0.2
V
GSS
+20, –10
±60
V
I
D
=
100µA,
V
GS
=
0V
V
(BR) DSS
V
C0.5
VGS = +20V
I
I
A
+10
–5
D
I
µA
GSS
±180
VGS = –10V
*
A
D (pulse)
µA
V
V
=
50V,
V
GS
=
0V
P
T
DS
100
2.5
35 (Tc=25ºC)
150
W
ºC
ºC
I
D
DSS
a
b
V
V
DS
=
10V, I =
D
250µA
1.0
20
ch
TH
Tstg
R
R
V
=
10V, I =
D
25A
25A
S
–55 to +150
e (yfs)
DS
GS
1.35±0.15
V
=
10V,
I
D
=
9
2700
1100
500
20
11
mΩ
pF
pF
pF
ns
ns
ns
ns
V
1.35±0.15
+0.2
DS (ON)
*
PW 100µs, duty 1%
Ciss
Coss
Crss
–0.1
V
f
=
10V
0.85
DS
= 1.0MHz
+0.2
2.4±0.2
V
I
=
0V
25A
12V
0.48Ω
GS
–0.1
2.54
2.54 0.45
2.2±0.2
t
t
t
t
d (on)
=
D
600
300
100
1.0
V
R
V
r
DD
=
L
d (off)
f
a) Part No.
b) Lot No.
G
D S
=
10V
GS
(Unit: mm)
1.5
V
I
SD
=
50A,
V
GS
=
0V
SD
Di, t
I
F
=
25A, di/dt
=
100A/µs
110
ns
rr
ꢀꢀID — VDS Characteristics
ꢀꢀID — VGS Characteristics
ꢀꢀRDS (ON) — ID Characteristics
20
180
160
140
120
100
80
1000
10V
VDS=10V
Ta=25ºC
6V
100
4.5V
15
10
1
VGS=4V
VGS=10V
4V
10
5
VGS=3.5V
60
0.1
Ta=–55ºC
40
20
0
25ºC
150ºC
0.01
0.001
0
0
1
2
3
4
5
6
1
10
Drain current ID (A)
100
200
0
2
4
6
8
10
Drain-source voltage VDS (V)
Gate-source voltage VGS (V)
R
— ID Characteristics
V
— VGS Characteristics
R
— TC Characteristics
ꢀꢀ e (yfs)
ꢀꢀ DS
ꢀꢀ DS (ON)
1.4
1.2
1.0
0.8
0.6
0.4
20
500
VDS=10V
Ta=25ºC
ID=25A
VGS=4V
–55ºC
25ºC
15
10
5
100
125ºC
VGS=10V
ID=60A
ID=25A
0.2
0
10
5
1
0
0
5
10
15
20
10
100 200
150
–60 –50
0
50
100
Drain current ID (A)
Gate-source voltage VGS (V)
Case temperature Tc (ºC)
Capacitance— VDS Characteristics
ꢀꢀ
ꢀꢀIDR — VSD Characteristics
Safe Operating Area
ꢀꢀ
P
ꢀꢀ D
— T Derating
a
180
160
140
120
100
80
10000
1000
100
300
40
30
20
10
0
Ta= 25ºC
GS=0V
f=1MHz
VGS= 0V
ID (pulse) max
V
Ta= 25ºC
100
PT=1ms
Ciss
PT=10ms
10
1
Coss
Crss
60
40
Ta=25ºC
single pulse
20
Without heatsink
0.1
0
0
10
20
30
40
50
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source-drain voltage VSD (V)
0
50
100
150
0.1
1
10
100
Drain-source voltage VDS (V)
Drain-source voltage VDS (V)
Ambient temperature
T (ºC)
a
95
MOS FET FKV560S
Absolute Maximum Ratings (Ta=25ºC)
Electrical Characteristics
External Dimensions TO220S
(Ta=25ºC)
Symbol
Ratings
50
Unit
Ratings
typ
Symbol
Test Conditions
Unit
V
min
50
max
V
DSS
V
4.44±0.2
10.2±0.3
V
GSS
±20
V
I
D
=
100µA,
V
GS
=
0V
V
(BR) DSS
V
GS = +20V
I
I
±45
A
+10
–5
D
1.3±0.2
I
µA
GSS
±135
V
GS = –20V
*
A
D (pulse)
µA
V
V
=
50V,
V
GS
=
0V
P
T
DS
100
2.0
60 (Tc=25ºC)
150
W
ºC
ºC
I
D
DSS
a
1.6
V
V
DS
=
10V, I =
D
250µA
1.0
ch
TH
b
Tstg
R
R
V
=
10V, I =
D
25A
25A
20.0
S
–55 to +150
e (yfs)
DS
GS
+0.2
–0.1
0.1
V
=
10V,
I
D
=
9
2000
1000
150
11
mΩ
pF
pF
pF
ns
ns
ns
ns
V
*
PW 100µs, duty 1%
DS (ON)
1.27±0.2
Ciss
Coss
Crss
V
f
=
10V
1.0MHz
0V
DS
+0.2
0.4±0.1
=
V
–0.1
0.86
=
1.2±0.2
2.54±0.5
GS
2.54±0.5
t
t
t
t
d (on)
I
=
25A
12V
0.48Ω
D
V
R
V
r
DD
To be
defined
=
L
d (off)
f
a) Part No.
b) Lot No.
=
10V
GS
(Unit: mm)
I
SD
=
50A,
V
GS
=
0V
1.0
1.5
V
SD
96
MOS FET FKV660 (under development)
Absolute Maximum Ratings
Electrical Characteristics
External Dimensions FM20 (full-mold)
(Ta=25ºC)
(Ta=25ºC)
Ratings
typ
Symbol
Ratings
60
Unit
V
Symbol
Test Conditions
Unit
V
min
60
max
V
DSS
4.2±0.2
2.8
10.0±0.2
3.3±0.2
V
GSS
±20
V
I
D
=
100µA,
V
GS
=
0V
V
(BR) DSS
C0.5
V
GS = +20V
I
I
±50
A
+10
–5
D
I
µA
GSS
±150
V
GS = –20V
*
A
D (pulse)
µA
V
V
=
60V,
V
GS
=
0V
P
T
DS
100
2.0
40 (Tc=25ºC)
150
W
ºC
ºC
I
D
DSS
a
b
V
V
DS
=
10V, I =
D
250µA
1.0
ch
TH
Tstg
R
R
V
=
10V, I =
D
25A
25A
20.0
S
–55 to +150
e (yfs)
DS
GS
1.35±0.15
V
=
10V, I =
D
11
2000
900
14
mΩ
pF
pF
pF
ns
ns
ns
ns
V
1.35±0.15
+0.2
*
PW 100µs, duty 1%
DS (ON)
Ciss
Coss
Crss
–0.1
V
f
=
10V
1.0MHz
0V
0.85
DS
=
V
+0.2
–0.1
2.4±0.2
=
GS
100
2.54
2.54 0.45
2.2±0.2
t
t
t
t
d (on)
I
=
25A
12V
0.48Ω
D
V
R
V
r
DD
To be
defined
=
L
d (off)
f
a) Part No.
b) Lot No.
G
D S
=
10V
GS
(Unit: mm)
I
SD
=
50A,
V
GS
=
0V
1.0
1.5
V
SD
97
MOS FET FKV660S
Absolute Maximum Ratings(Ta=25ºC)
Electrical Characteristics
External Dimensions TO220S
(Ta=25ºC)
Ratings
typ
Symbol
Ratings
60
Unit
V
Symbol
Test Conditions
Unit
min
60
max
V
DSS
±0.2
4.44
±0.3
V
GSS
+20, –10
±60
V
I
=100µA,
D
V =0V
GS
V
(BR)DSS
V
10.2
V
GS
=+20V
I
D
A
+10
–5
±0.2
1.3
I
µA
GSS
±180
V
GS
=–10V
I
A
D(pulse)
µA
V
V
=60V, V
GS
=0V
P
D
DS
100
2.5
60(Tc=25ºC)
150
W
ºC
ºC
I
DSS
a
1.6
T
ch
V
V
DS
=10V,
=10V,
DS
I
=250µA
1.0
20
TH
D
b
+0.2
Tstg
R
R
V
V
I
=25A
D
S
–40 to +150
e(yfs)
–0.1
0.1
=10V,
GS
I =25A
D
11
2500
900
150
50
14
mΩ
pF
pF
pF
ns
ns
ns
ns
V
PW 100µs, duty 1%
DS(ON)
±0.2
1.27
Ciss
Coss
Crss
V =10V
DS
+0.2
±0.1
f=1.0MHz
=0V
–0.1
0.86
0.4
±0.2
V
GS
1.2
2.54
±0.5
±0.5
2.54
t
t
t
t
d(on)
I =25A
D
400
400
300
1.0
r
V
DD
=12V
R =0.48Ω
L
d(off)
f
a) Part No.
b) Lot No.
V =10V
GS
(Unit : mm)
1.5
V
I
SD
=50A,
V =0V
GS
SD
98
MOS FET Array STA508A
Electrical Characteristics
External Dimensions STA4 (LF412)
Absolute Maximum Ratings
(Ta=25ºC)
(Ta=25ºC)
Ratings
typ
Symbol
Ratings
120
Unit
V
Symbol
Test Conditions
Unit
25.25±0.2
min
120
max
V
DSS
V
GSS
±20
V
I
=
100µA,
GS = ±20V
120V,
10V,
V
=
0V
V
(BR) DSS
D
GS
V
µA
µA
b
V
I
I
±6
A
I
I
±5
100
2.0
D
GSS
a
1
±10
V
V
=
V
=
0V
*
A
DS
GS
D (pulse)
DSS
V
S
V
TH
=
I
=
250µA
1.0
5.0
4 (Ta
20 (Tc
=
=
25ºC)
25ºC)
W
W
DS
D
P
T
R
e (yfs
)
V
=
10V,
10V,
4V,
I =
D
4.0A
4.0A
4.0A
DS
GS
GS
(2.54)
1.0±0.25
0.5±0.15
2
E
T
*
80
V
V
=
=
I
I
=
=
0.15
0.2
0.2
Ω
D
0±0.3
9•2.54=22.86±0.05
0±0.3
AS
mJ
ºC
ºC
R
DS (ON
)
Ω
150
D
0.25
ch
Tstg
400
130
30
pF
pF
pF
ns
ns
ns
ns
V
–55 to +150
Ciss
Coss
Crss
V
=
10V
1.0MHz
0V
DS
f
=
*
*
1
2
PW 100µs, duty 1%
VDD 12V, 10mH, unclamped, RG = 50Ω
C1.5±0.5
V
=
GS
=
L
=
td on)
(
100
300
250
200
1.0
I
= 4A
D
DD
L
1
S
2
G
3
D
4
G
5
D
6
G
7
D
8
G
9
D
10
S
V
12V
tr
R
=
3Ω
5V
td off)
(
a) Part No.
b) Lot No.
V
=
GS
G
R
=
50Ω
tf
(Unit: mm)
V
SD
I
=
6A,
V
GS
=
0V
1.5
SD
—
Characteristics
—
GS Characteristics
V
—
D Characteristics
I
ꢀꢀID VDS
ꢀꢀID
ꢀꢀRDS (ON)
16
10
0.30
VGS = 10V
VDS = 10V
0.25
0.20
0.15
0.10
8
6
4
2
0
12
8
VGS = 4.5V
VGS = 4V
T
= –55ºC
25ºC
75ºC
a
VGS = 10V
150ºC
4
0.05
0
0
0
0
1
2
3
4
5
6
0
1.0
2.0
3.0
4.0
2
4
6
8
10
VDS (V)
VGS (V)
ID (A)
—
D Characteristics
I
ꢀꢀRe (yfs)
—
C Characteristics
—
SD Characteristics
VGS = 0V
ꢀꢀRDS (ON)
0.45
T
ꢀꢀIDR
V
50
6
ID = 4A
0.40
VGS = 4V
5
4
3
10
5
T
= 150ºC
75ºC
25ºC
a
0.30
0.20
–55ºC
VGS = 10V
T
= –55ºC
25ºC
75ºC
a
1
2
1
0.5
0.10
0
150ºC
0.1
0.05 0.1
0
0.5
1
5
10
–50
0
50
100
150
0
0.2
0.4
0.6
0.8
1.0
1.2
Tc (ºC)
ID (A)
VSD (V)
afe Operating Area (single pulse)
ꢀꢀS
—
DS Characteristics
V
ꢀꢀCapacitance
1000
Equivalent Circuit Diagram
(Ta= 25ºC)
20
10
5
ID
max
(
pulse
)
500
Ciss
ID
max
(
DC
)
RDS (on) LIMITED
VGS = 0V
f= 1MHz
3
5
7
9
100
50
Coss
2
1
4
6
8
1
10
0.5
Crss
0.1
10
1
5
10
50 100 200
0
10
20
30
40
50
VDS (V)
VDS (V)
99
MOS FET Array STA509A
External Dimensions STA
Absolute Maximum Ratings (Ta=25ºC)
Electrical Characteristics
(Ta=25ºC)
Symbol
Ratings
52±5
±20
Unit
V
Ratings
typ
Symbol
Test Conditions
Unit
25.25±0.2
min
47
max
V
DSS
V
GSS
V
I
=
1mA, 0V
V
=
V
(BR) DSS
D
GS
52
57
±1.0
100
2.5
V
µA
µA
b
VGS = ±20V
I
I
±3
A
I
I
D
GSS
a
1
±6
V
=
40V,
V
GS
=
0V
*
A
DS
D (pulse)
DSS
V
S
V
TH
V
=
10V, I =
D
250µA
1.0
1.0
4 (Ta
20 (Tc
=
=
25ºC)
25ºC)
W
W
DS
P
T
R
e (yfs)
V
V
V
=
10V,
10V,
4V,
I =
D
1.0A
1.0A
1.0A
DS
GS
GS
(2.54)
2
1.0±0.25
0.5±0.15
E
T
*
40
=
=
I
I
=
=
0.2
0.25
200
120
20
0.25
0.3
Ω
0±0.3
9•2.54=22.86±0.05
0±0.3
AS
mJ
ºC
ºC
D
R
DS (ON)
Ω
150
D
ch
Tstg
pF
pF
pF
µs
µs
µs
µs
V
–55 to +150
Ciss
Coss
Crss
V
=
10V
1.0MHz
0V
DS
C1.5±0.5
f
=
*
*
1
2
PW 100µs, duty 1%
VDD 12V, 10mH, unclamped, RG = 10Ω
V
=
GS
=
L
=
td on
(
2.0
7.4
3.3
4.2
1.0
)
I = 1A
D
1
S
2
G
3
D
4
G
5
D
6
G
7
D
8
G
9
D
10
S
V
12V
DD
tr
R
=
12Ω
= 5V
L
GS
td off
(
)
a) Part No.
b) Lot No.
V
50Ω,
R
=
R
G2
=
10Ω
G1
tf
(Unit: mm)
V
SD
I
=
6A,
V
GS
=
0V
1.5
SD
—
D Characteristics
I
—
Characteristics
ꢀꢀ
RDS (ON)
ꢀꢀID VDS
—
20
10
GS Characteristics
ꢀꢀID
V
0.8
6
VGS = 4V
VGS = 4V
VDS = 10V
5
4
3
T
= 150ºC
75ºC
a
VGS = 5V
VGS = 10V
0.6
0.4
1
25ºC
2
1
–55ºC
0.1
T
= –55ºC
25ºC
75ºC
a
VGS = 3V
0.2
0
150ºC
0
0
0.01
0
1
2
3
4
5
6
2
4
6
8
10 12 14
0
1
2
3
4
5
6
ID (A)
VDS (V)
VGS (V)
—
D Characteristics
VDS = 10V
— SD Characteristics
ꢀꢀ
IDR V
—
C Characteristics
T
ꢀꢀ
Re (yfs)
10
I
ꢀꢀRDS (ON)
0.5
10
ID = 1A
5
VGS = 4V
8
6
4
2
0
0.4
0.3
0.2
0.1
typ.
T
= 150ºC
75ºC
a
25ºC
–55ºC
VGS = 10V
typ.
1
T
= –55ºC
25ºC
150ºC
a
0.5
0.2
0.05 0.1
0
0.5
1
6
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD (V)
–50
0
50
100
150
ID (A)
Tc (ºC)
Safe Operating Area (single pulse)
ꢀꢀ
Equivalent Circuit Diagram
(Tc= 25ºC)
10
ID
max
(pulse)
5
3
5
7
9
1
2
1
4
6
8
0.5
10
0.1
0.5
1
5
10
50
VDS (V)
100
MOS FET Array SMA5113
Absolute Maximum Ratings (Ta=25ºC)
Electrical Characteristics
External Dimensions SMA (LF1000)
(Ta=25ºC)
Symbol
Ratings
Unit
V
Ratings
typ
Symbol
Test Conditions
Unit
min
450
max
V
DSS
450
4.0±0.2
V
GSS
±30
V
I
D
=
100µA,
V
GS
=
0V
V
(BR) DSS
V
31.0±0.2
2.5±0.2
V
GS = ±30V
nA
µA
I
I
±7
±28
A
I
I
±100
100
4.0
D
GSS
1
30º
V
=
450V,
V
D
=
0V
*
A
DS
GS
D (pulse)
DSS
b
a
4 (Ta=25ºC, All circuits operate, No Fin)
V
S
V
V
=
=
=
10V,
20V,
10V,
I
=
=
=
1mA
3.5A
3.5A
2.0
3.5
W
W
TH
DS
DS
GS
P
T
35 (Tc=25ºC, All circuits operate,
∞ Fin)
5.0
0.84
720
150
65
R
R
V
I
D
e (yfs)
DS (ON
1.21±0.15
1.46±0.15
+0.2
2
E
I
*
130
7
)
V
I
D
1.1
Ω
AS
mJ
A
pF
pF
pF
ns
ns
ns
ns
V
Ciss
Coss
Crss
AS
V
f
=
10V
1.0MHz
0V
DS
–0.1
0.85
+0.2
1.2±0.1
–0.1
0.55
11•P2.54±0.1=27.94
Junction - Ambientare,
=
V
31.2
3.57
j-a
j-c
ºC/W
ºC/W
Ta=25ºC, All circuits operate
=
GS
Junction - Case,
31.5max
Ta=25º , All circuits operate
C
td on
(
)
I
=
3.5A
25
40
D
V
200V
DD
T
ºC
ºC
tr
150
–55 to +150
PW 100µs, duty 1%
VDD 30V, 5mH, IL
RG 50Ω
ch
R
= 57Ω
L
GS
Tstg
td off
(
70
)
V
=
10V
50Ω
1
2 3 4 5 6 7 8 9 10 11 12
R
=
G
50
tf
*
*
1
2
a) Part No.
b) Lot No.
=
L
=
=
7A, unclamped,
1.0
1.5
V
SD
I
SD
=
7A,
V
GS
=
0V
(Unit: mm)
=
—
Characteristics
10V
—
GS Characteristics
VDS = 20V
—
D Characteristics
I
ꢀꢀID VDS
ꢀꢀID
V
ꢀꢀRDS (ON)
7
7
1.5
5.5V
VGS = 10V
6
5
4
3
6
5
4
3
1.0
0.5
5V
2
1
2
1
T
= –55ºC
25ºC
150ºC
a
VGS = 4.5V
0
0
0
0
0
5
10
15
20
0
2
4
6
8
10
1
2
3
4
5
6
7
VDS (V)
VGS (V)
ID (A)
—
C Characteristics
T
—
D Characteristics
—
SD Characteristics
VGS = 0V
ꢀꢀRDS (ON)
ꢀꢀRe (yfs)
I
ꢀꢀIDR
V
2.5
100
7
VDS = 20V
VGS = 10V
ID = 3.5A
6
5
4
3
50
2.0
1.5
1.0
0.5
T
= –55ºC
25ºC
150ºC
a
10
5
2
1
2
0
0
0
–50
0
50
100
150
0.05 0.1
0.5
1
7
0.2
0.4
0.6
0.8
1.0
Tc (ºC)
ID (A)
VSD (V)
Capacitance— VDS Characteristics
Safe Operating Area (single pulse)
ꢀꢀ
ꢀꢀ
Equivalent Circuit Diagram
(Ta= 25ºC)
1000
50
Ciss
ID
max
(pulse)
500
10
5
ID (DC) max
VGS = 0V
f= 1MHz
3
6
7
10
1
4
8
11
1
100
50
Coss
0.5
2
5
9
12
Crss
40
0.1
0.05
20
0
10
20
30
50
3
5
10
50 100
500
VDS (V)
VDS (V)
101
MOS FET Array SLA5027
External Dimensions SLA (LF800)
Absolute Maximum Ratings
Electrical Characteristics
(Ta=25ºC)
(Ta=25ºC)
Ratings
typ
Symbol
Ratings
60
Unit
V
Symbol
Test Conditions
Unit
min
60
max
V
DSS
31.0±0.2
24.4±0.2
16.4±0.2
Ellipse 3.2±0.15 •3.8
4.8±0.2
1.7±0.1
V
GSS
±20
V
I
=
100µA,
V
GS
=
0V
V
(BR) DSS
D
V
µA
µA
3.2±0.15
V
=
=
GS = ±20V
I
I
±12
A
I
I
±100
100
2.0
D
GSS
1
±48
V
V
60V,
10V,
V
I
=
0V
*
A
DS
GS
D (pulse)
DSS
V
S
V
TH
=
1mA
1.0
6.0
1.5
12.0
0.07
1100
500
5 (Ta=25ºC, 4 circuits operate)
W
W
DS
D
P
T
a
R
R
V
=
10V,
4V,
I =
D
8A
8A
60 (Tc=25ºC,4 circuits operate)
e
(yfs)
DS
b
2
E *
AS
250
2.08
DS (ON)
V
GS
=
I =
D
0.08
Ω
mJ
ºC/W
Vrms
ºC
pF
pF
pF
ns
ns
ns
ns
V
Ciss
Coss
Crss
j-c
V
=
10V
1.0MHz
0V
DS
12
Pin
1.2±0.15
1
(Fin to lead terminal) AC1000
V
T
f
=
+0.2
–0.1
ISO
0.55 +0.2
–0.1
2.2±0.7
0.85
1.45±0.15
V
=
GS
170
150
ch
0.7 1.0
=
27.94±
11•P2.54±
Tstg
ºC
t
–55 to +150
d (on)
I
=
8A
50
250
250
180
1.0
D
DD
V
30V
31.5max
t
t
t
*
*
1
2
PW 250µs, duty 1%
VDD 30V, 10mH, unclamped, RG = 50Ω
r
R
=
3.75Ω
= 5V
L
=
L
=
d (off)
f
V
GS
G
R
=
50Ω
1
2
3
4
5
6
7
8
9
10 11 12
a) Part No.
b) Lot No.
V
SD
I
=
10A,
V
GS
=
0V
1.5
SD
(Unit: mm)
—
Characteristics
—
GS Characteristics
VDS = 10V
— D Characteristics
ꢀꢀRDS (ON)
I
ꢀꢀID VDS
ꢀꢀID
V
10
12
0.1
10
8
8
6
4
2
VGS = 4V
4V
5V
10V
6
0.05
VGS = 10V
VGS = 3V
T
= 150ºC
75ºC
a
4
25ºC
–55ºC
2
0
0
0
0
1
2
3
4
5
6
150
50
0
1
2
3
4
0.1
1
10 20
VDS (V)
VGS (V)
ID (A)
—
D Characteristics
—
SD Characteristics
VGS = 0V
—
C Characteristics
T
ꢀꢀ
ꢀꢀ
IDR
Re (yfs)
30
I
V
ꢀꢀRDS (ON)
0.12
20
VDS = 10V
VGS = 4V
10
5
0.10
10
5
VGS = 10V
1
0.06
0.5
0.02
–50
2
0.4
0.1
1
5
10
20
0
0.4
0.8
1.2
0
50
100
ID (A)
VSD (V)
Tc (ºC)
Capacitance— DS Characteristics
ꢀꢀ
V
Safe Operating Area (single pulse)
ꢀꢀ
Equivalent Circuit Diagram
(Ta= 25ºC)
2000
1000
500
50
ID
max
(pulse)
VGS = 0V
f= 1MHz
Ciss
ID (DC) max
10
5
3
6
7
10
Coss
1
4
8
11
2
5
9
12
Crss
100
50
1
0.5
0.5
1
5
10
1
5
10
50 100
VDS (V)
VDS (V)
102
Surface-mount MOS FET Array SDK06
Absolute Maximum Ratings (Ta=25ºC)
Electrical Characteristics
External Dimensions SMD-16A
(Ta=25ºC)
Symbol
Ratings
52±5
±20
Unit
V
Ratings
typ
Symbol
Test Conditions
Unit
min
47
max
V
DSS
(BR) DSS
GSS
D
52
57
±1.0
100
2.5
V
µA
µA
2.54±0.25
0.89±0.15
V
GSS
V
I
=
1mA, 0V
V
=
GS
V
0.25
+0.15
–0.05
0.75
VGS = ±20V
I
I
±3
A
I
I
D
16
9
1
±6
V
=
40V,
V
GS
=
0V
*
A
DS
D (pulse)
DSS
a
V
S
P
V
TH
V
=
10V, I =
D
250µA
1.0
1.0
1.8
3 (Tc=25ºC, 4 circuits operate)
W
T
DS
2
b
E
T
*
40
150
R
e (yfs
V
V
V
=
10V,
10V,
4V,
I =
D
1.0A
1.0A
1.0A
AS
mJ
ºC
ºC
)
DS
GS
GS
=
=
I
I
=
0.2
0.25
200
120
20
0.25
0.3
Ω
ch
D
+0.15
Pin 1
8
–0.05
0.3
20.0max
19.56±0.2
R
DS (ON)
Ω
Tstg
=
–55 to +150
D
pF
pF
pF
µs
µs
µs
µs
V
Ciss
Coss
Crss
*
*
1
2
PW 100µs, duty 1%
VDD 12V, 10mH, unclamped, RG = 10Ω
V
=
10V
1.0MHz
0V
DS
=
L
=
f
=
V
=
GS
t
t
t
t
d (on)
I
=
1A
2.0
7.4
3.3
4.2
1.0
D
DD
V
12V
r
R
= 12Ω
= 5V
L
GS
d (off)
f
a) Part No.
b) Lot No.
V
R
=
50Ω,
R
=
10kΩ
G1
G2
(Unit: mm)
V
SD
I
=
1A,
V
GS
=
0V
1.5
SD
— D Characteristics
I
—
Characteristics
ꢀꢀ
RDS (ON)
ꢀꢀID VDS
—
20
10
GS Characteristics
ꢀꢀID
V
0.8
6
VGS = 4V
VGS = 4V
VDS = 10V
5
4
3
T
= 150ºC
75ºC
a
VGS = 5V
VGS = 10V
0.6
0.4
1
25ºC
2
1
–55ºC
0.1
T
= –55ºC
25ºC
75ºC
a
VGS = 3V
0.2
150ºC
0
0
0
0
0.01
1
2
3
4
5
6
2
4
6
8
10 12 14
0
1
2
3
4
5
6
ID (A)
VDS (V)
VGS (V)
—
D Characteristics
VDS = 10V
— SD Characteristics
ꢀꢀ
IDR V
—
C Characteristics
T
ꢀꢀ
Re (yfs)
10
I
ꢀꢀRDS (ON)
0.5
10
ID = 1A
5
VGS = 4V
8
6
4
2
0
0.4
0.3
0.2
0.1
typ.
T
= 150ºC
75ºC
a
25ºC
–55ºC
VGS = 10V
typ.
1
T
= –55ºC
25ºC
150ºC
a
0.5
0.2
0.05 0.1
0
0.5
1
6
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD (V)
–50
0
50
100
150
ID (A)
Tc (ºC)
Safe Operating Area (single pulse)
ꢀꢀ
Equivalent Circuit Diagram
(Tc= 25ºC)
10
ID
max
(pulse)
5
15 16
3
13 14
5
11 12
7
9
8
10
1
1
0.5
2
4
6
0.1
0.5
1
5
10
50
VDS (V)
103
Surface-mount MOS FET Array SDK08
External Dimensions SMD-16A
Absolute Maximum Ratings
Electrical Characteristics
(Ta=25ºC)
(Ta=25ºC)
Symbol
Ratings
50
Unit
V
Ratings
typ
Symbol
Test Conditions
Unit
min
50
max
V
DSS
V
GSS
±20
V
I
D
=
100µA,
V
GS
=
0V
2.54±0.25
0.89±0.15
V
(BR) DSS
V
0.25
+0.15
–0.05
0.75
V
=
=
=
=
=
GS = ±20V
I
I
±4.5
±9
A
I
I
±100
100
2.3
nA
µA
D
GSS
16
9
1
V
V
V
V
V
50V,
10V,
10V,
10V,
4V,
V
I
=
0V
*
A
DS
DS
DS
GS
GS
GS
D (pulse)
DSS
a
V
S
P
V
=
1mA
4.0A
4.0A
4.0A
1.3
5.0
1.8
9.0
4 (Tc=25ºC, 4 circuits operate)
W
T
TH
D
2
b
I
D
=
=
=
13.0
0.08
0.1
E
T
*
80
150
R
AS
mJ
ºC
ºC
e (yfs)
I
I
0.07
0.09
700
300
90
Ω
ch
D
+0.15
Pin 1
8
–0.05
0.3
20.0max
19.56±0.2
R
DS (ON)
Ω
Tstg
–55 to +150
D
pF
pF
pF
ns
ns
ns
ns
V
Ciss
Coss
Crss
*
*
1
2
PW 100µs, duty 1%
VDD 12V, 10mH, unclamped, RG = 50Ω
V
f
=
10V
1.0MHz
0V
DS
=
L
=
=
V
=
GS
t
t
t
t
d (on)
I
=
4A
50
80
D
DD
L
V
12V
r
R
=
3Ω
60
d (off)
f
a) Part No.
b) Lot No.
V
=
5V
GS
G
R
=
50Ω
40
(Unit: mm)
V
I
=
6A,
V
GS
=
0V
1.0
1.5
SD
SD
Equivalent Circuit Diagram
15
16
13
14
11
12
9
10
1
3
5
7
2
4
6
8
104
Surface-mount MOS FET Array SDK09 (under development)
External Dimensions SMD-16A
Absolute Maximum Ratings (Ta=25ºC)
Electrical Characteristics
(Ta=25ºC)
Ratings
typ
Symbol
Ratings
Unit
V
Symbol
Test Conditions
Unit
min
120
max
V
DSS
120
V
GSS
±20
V
I
=100µA,
D
V =0V
GS
2.54±0.25
0.89±0.15
V
(BR) DSS
V
0.25
+0.15
–0.05
0.75
V =±20V
GS
I
±6
A
I
I
±5
100
2.0
µA
µA
D
GSS
16
9
1
±10
V
=120V, V
DS GS
=0V
I
*
A
D (pulse)
DSS
a
V
S
P
T
3 (Tc=25ºC, 4 circuits operate)
V
V
DS
=10V, I =250µA
D
1.0
5.0
W
mJ
ºC
ºC
TH
2
b
E
T
*
R
V
V
V
=10V,
DS
=10V,
GS
=4V,
GS
I
=4A
=4A
=4A
80
150
AS
e
(yfs)
D
I
I
0.15
0.2
0.2
+0.15
ch
D
–0.05
Pin 1
8
0.3
20.0max
19.56±0.2
Ω
R
DS (ON)
Tstg
0.25
–55 to +150
D
400
130
30
pF
pF
pF
ns
ns
ns
ns
V
Ciss
Coss
Crss
V
=10V
DS
*
*
1
2
PW 100µs, duty 1%
VDD 12V, 10mH, unclamped, RG
f=1.0MHz
=0V
=
L
=
=
50Ω
V
GS
t
t
t
t
d (on)
I
D
=4A
=12V
100
300
250
200
1.0
V
DD
R =3Ω
r
L
d (off)
f
a) Part No.
b) Lot No.
V
R
=5V
GS
=50Ω
G
(Unit: mm)
I
SD
=6A,
V =0V
GS
1.5
V
SD
—
Characteristics
—
GS Characteristics
V
— D Characteristics
I
ꢀꢀID VDS
ꢀꢀID
ꢀꢀRDS (ON)
16
10
0.30
VGS=10V
VDS=10V
0.25
0.20
0.15
0.10
8
12
8
VGS=4.5V
VGS=4V
6
Ta=–55ºC
25ºC
VGS=10V
4
75ºC
150ºC
4
2
0.05
0
0
0
0
0
1
2
3
4
5
6
0
1.0
2.0
3.0
4.0
2
4
6
8
10
VDS (V)
VGS (V)
ID (A)
—
D Characteristics
ꢀꢀRe (yfs)
I
—
SD Characteristics
VGS=0V
—
C Characteristics
T
ꢀꢀ
IDR
V
ꢀꢀRDS (ON)
50
0.45
6
ID=4A
0.40
VGS=4V
5
4
3
10
5
T
=150ºC
75ºC
25ºC
a
0.30
0.20
–55ºC
VGS=10V
Ta=–55ºC
25ºC
1
2
1
0.5
75ºC
150ºC
0.10
0
0.1
0.05 0.1
0
0.5
1
5
10
–50
0
50
100
150
0
0.2
0.4
0.6
0.8
1.0
1.2
ID (A)
Tc (ºC)
VSD (V)
Safe Operating Area (single pulse)
ꢀꢀ
Capacitance— DS Characteristics
ꢀꢀ
V
Equivalent Circuit Diagram
(Ta= 25ºC)
20
10
5
1000
ID (
pulse)
max
500
Ciss
ID (DC) max
15
16
13
14
11
12
9
10
RDS (on) LIMITED
VGS=0V
f=1MHz
100
50
Coss
1
1
3
5
7
0.5
2
4
6
8
Crss
0.1
10
1
5
10
50 100 200
0
10
20
30
40
50
VDS (V)
VDS (V)
105
Thyristor with built-in reverse diode for HID lamp ignition TFC561D
(unit: mm)
External Dimensions
Features
4.44±0.2
ꢀ Repetitive peak off-state voltage: VDRM=600V
ꢀ Repetitive peak surge on-state current: ITRM=430A
ꢀ Critical rate-of-rise of on-state current: di/dt=1200A/µs
ꢀ Gate trigger current: IGT=20mA max
10.2±0.3
1.3±0.2
ꢀ With built-in reverse diode
1.2±0.2
2.59±0.2
1.27±0.2
0.86+–00..21
0.76±0.1
Absolute Maximum Ratings
Parameter
Symbol
Ratings
600
Unit
V
Conditions
2.54±0.5
2.54±0.5
0.4±0.1
Tj=–40 to +125°C
RGK=1kΩ
,
Repetitive peak off-state voltage
VDRM
(1). Cathode(K)
(2). Anode(A)
(3). Gate(G)
(1) (2) (3)
VD 430V, 100kcycle,
*
Repetitive surge peak
on-state current
ITRM
430
A
Wp=1.3µs, Ta=125°C
Weight: Approx. 1.5g
Critical rate-of-rise of on-state current
Peak forward gate current
Peak gate power loss
di/dt
IFGM
1200
2.0
5.0
0.5
5
A/µs
A
*
f
50Hz, duty 10%
50Hz, duty 10%
PGM
W
f
Average gate power loss
Peak reverse gate voltage
PG (AV)
VRGM
W
Measurement circuit
V
f
50Hz
L
VD 430V, 100kcycle,
*
Diode repetitive peak surge
forward current
IFRM
240
A
Wp=1.3µs, Ta=125°C
Junction temperature
Storage temperature
Tj
–40 to +125
–40 to +125
ºC
ºC
Tstg
Sample
VD
C
The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to
cool down the junction temperature of the device to 125°C. This process shall be repeated up to 100K cycles.
G1
*
G2
Electrical Characteristics
(Tj=25ºC)
Ratings
typ
Parameter
Symbol
Unit
Conditions
min
max
1.4
VTM
VGT
V
V
IT=10A
VD=6V, RL=10Ω
On-state voltage
Current waveform (1cycle)
1.5
20
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
(Ta=25ºC)
IGT
mA
V
VD=6V, RL=10Ω
VGD
0.1
2
VD=480V, Tj=125ºC
RG–K=1kΩ, Tj=25ºC
IH
10.0
mA
µA
mA
ºC/W
V
IDRM (1)
IDRM (2)
Rth
100
1
VD=VDRM, RG–K
=
1k
Ω, Tj=25ºC
Off-state current (1)
Off-state current (2)
Thermal resistance
Diode forward voltage
VD=VDRM, RG–K
=
1k
Ω, Tj=125ºC
4.0
1.4
Junction to case
IF=10A
VF
2µs/div
106
Rectifier Diodes for Alternators
Absolute maximum ratings
Electrical Characteristics
Fig.
No.
VF
(V)
max
IR
VRM
(V)
IF (AV)
(A)
IFSM
(A)
Tstg
(ºC)
Part No.
VZ
(V)
Condition
(mA)
Condition
IZ (mA)
max
IF (A)
SG-9CNS
200
200
200
20
20
35
200
300
350
–40 to +150
–40 to +150
–40 to +150
1.10
1.10
1.10
20
30
35
0.25
0.25
0.25
—
—
—
—
—
—
1
2
2
SG-9CNR
SG-9LCNS
SG-9LCNR
SG-9LLCNS
SG-9LLCNR
(unit: mm)
External Dimensions
Fig. 1
Fig. 2
1.5
1.5
(R0.5)
3.1±0.1
3.1±0.1
Polarity
Polarity
7.0±0.2
8.4±0.2
8.4±0.2
9.5±0.2
S type
R type
S type
R type
107
High-voltage Diodes for Igniters
Absolute Maximum Ratings
Electrical Characteristics (Ta=25ºC)
IF (AV)
(mA)
IRSM
IRSM
(A)
Peak value
of 50 Hz
half-wave
signal
(mA)
VRM
(kV)
Tj
Tstg
VF
(V)
max
IR
Vz
Fig.
No.
Peak value of
single shot
Part No.
50 Hz
(µA)
(kV)
Condition
IF (mA)
half-wave
signal
average
triangular wave
with 100µs
VR=VRM IR=100µA
max
(ºC)
half-power
bandwidth
2.5
4.0
30
30
30
30
30
10
3
3
3
5
8
2.6 to 5.0
1
2
3
SHV-05JS
SHV-08J
SHV-30J
–40 to +150
10
10
4.5 to 8.0
15.0
30
16.0 to 30.0
(unit: mm)
External Dimensions
Fig. 1 (SHV-05JS)
Fig. 2 (SHV-08J)
2.5±0.2
3.0±0.2
C0.5
C0.5
8±0.2
27min
27min
27min
27min
5±0.2
Lot No.
Part No. code and cathode marking
Lot No.
Part No. code and cathode marking (white)
Fig. 3 (SHV-30J)
3.0±0.2
27min
12±0.2
27min
Part No. code and cathode marking (white)
108
Power Zener Diode
(Ta=25ºC)
Absolute Maximum Ratings
Electrical Characteristics
IZSM
(A)
VZ (V)
1mA
instantaneous
current
IR
(µA)
max
IR (H)
(mA)
max
Tj Tstg
External
dimensions
PR
(W)
VDC
(V)
Part No.
Remarks
10ms
rectangular
wave
(ºC)
single shot
SFPZ-68
SPZ-G36
PZ 628
50 20
2
11
65
10
5
1.0
0.1
1.0
1
2
3
28±3.0
36±3.6
28±3.0
Surface-mount
type
450
1500
30
20
–40 to +150
500
(unit: mm)
External Dimensions
Fig. 1
Fig. 2
2.3±0.4
6.5±0.4
5.4±0.4
5.4
4.1
4.5±0.2
0.55±0.1
2.9
a
b
4.9
c
0 to 0.25
1.15±0.1
0.8±0.1
0.8±0.1
1.35±0.4
1.35±0.4
1.1±0.2
1.5±0.2
2.0min
2.29±0.5
2.29±0.5
5.1+–00..41
0.55±0.1
1.5max
a) Part No.
b) Polarity
c) Lot No.
Fig. 3
1.3±0.05
C2
Cathode marking
10.0 ±0.2
109
General-purpose Diodes
Rectifier Diodes
Surface-mount Type
ꢀꢀ
Absolute Maximum Ratings
Tj Tstg
(ºC)
Electrical Characteristics
Absolute Maximum Ratings
Tj Tstg
(ºC)
Electrical Characteristics
Fig.
No.
Fig.
No.
VF
(V)
VF
(V)
IR
(µA)
max
IR
(µA)
max
Part No.
Part No.
VRM
(V)
IF (AV) IFSM
VRM
(V)
IF (AV) IFSM
Condition
IF (A)
Condition
IF (A)
(A)
(A)
(A)
(A)
max
max
SFPM-52
SFPM-62
SFPM-54
SFPM-64
0.9
1.0
0.9
1.0
30
45
30
45
–40 to +150
–40 to +150
–40 to +150
–40 to +150
1.0
1.0
1.0
1.0
1.0
10
10
10
10
RM 1C
EM 1C
RO 2C
RM 11C
RM 2C
RM 3C
RM 4C
0.8
1.0
40
35
80
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
1.2
1.0
1.0
1.5
1.5
1.5
2.5
3.0
5
20
10
10
10
10
10
5
4
6
5
6
7
8
200
400
1
1
0.98
1.0
0.97
0.92
0.92
0.91
0.95
0.95
0.98
1000
1.2
100
2.0
3.0
150
150
Axial Type
ꢀꢀ
Absolute Maximum Ratings
Tj Tstg
(ºC)
Electrical Characteristics
Fig.
No.
VF
(V)
IR
(µA)
max
Part No.
VRM
(V)
IF (AV) IFSM
Condition
IF (A)
(A)
(A)
Center-tap Type
ꢀꢀ
max
Absolute Maximum Ratings
Tj Tstg
(ºC)
Electrical Characteristics
EM 1Y
RM 4Y
AM01Z
EM01Z
EM 1Z
RM 1Z
RO 2Z
RM 2Z
RM 10Z
RM 4Z
AM01
1.0
3.0
45
200
35
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
0.97
0.95
0.98
0.97
0.97
0.95
0.92
0.91
0.91
0.95
0.98
0.97
0.97
0.95
0.92
0.92
0.91
0.91
0.95
0.95
0.98
0.97
0.97
0.95
0.92
0.92
0.92
0.91
0.91
0.95
0.95
0.92
1.2
1.0
3.0
1.0
1.0
1.0
1.0
1.5
1.5
1.5
3.0
1.0
1.0
1.0
1.0
1.2
1.5
1.5
1.5
2.5
3.0
1.0
1.0
1.0
1.0
1.2
1.5
1.5
1.5
1.5
2.5
3.0
3.5
1.0
1.0
1.2
1.5
1.5
1.5
1.5
2.5
3.0
10
10
10
10
10
5
4
8
2
3
4
5
100
Fig.
No.
VF
(V)
max
IR
(µA)
max
Part No.
VRM
(V)
IF (AV) IFSM
Condition
IF (A)
(A)
(A)
FMM-31S,R
FMM-22S,R
FMM-32S,R
FMM-24S,R
FMM-34S,R
FMM-26S,R
FMM-36S,R
100
200
20
10
20
10
20
10
20
120
100
120
100
120
100
120
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
1.10 10
10
10
10
10
10
10
10
10
9
1.0
45
1.10
5.0
50
80
1.10 10
10
9
200
10
10
10
10
10
10
10
5
1.10
5.0
1.2
6
400
600
100
120
200
35
1.10 10
10
9
1.5
3.0
5
8
2
3
4
5
4
1.10
5.0
1.10 10
10
EM01
1.0
1.2
45
50
80
EM 1
RM 1
EM 2
10
10
10
10
10
10
10
10
10
5
400
RO 2
6
RM 2
100
150
150
200
35
RM 10
RM 3
5
7
8
2
3
4
5
4
6
5
6
5
7
2.5
3.0
RM 4
AM01A
EM01A
EM 1A
RM 1A
EM 2A
RO 2A
RM 11A
RM 2A
RM 10A
RM 3A
RM 4A
RM 4AM
RM 1B
EM 1B
EM 2B
RO 2B
RM 11B
RM 2B
RM 10B
RM 3B
RM 4B
1.0
45
50
80
10
10
10
10
10
10
10
10
5
600
1.2
100
150
150
200
350
40
2.5
3.0
3.2
0.8
1.0
8
5
4
35
0.97
0.92
0.92
0.92
0.91
0.91
0.95
0.95
20
10
10
10
10
10
10
10
80
6
5
6
5
7
8
800
1.2
100
150
150
150
2.0
3.0
110
General-purpose Diodes
Fast Recovery Rectifier Diodes
ꢀtrr1=IF/IRP =1:1, trr2=IF/IRP=1:2
ꢀꢀAxial Type
Absolute Maximum Ratings
Tj Tstg
(ºC)
Electrical Characteristics
Absolute Maximum Ratings
Tj Tstg
(ºC)
Electrical Characteristics
Fig.
No.
Fig.
No.
VF
(V)
IR
(µA)
trr1
(µs)
trr2
(µs)
VF
(V)
IR
(µA)
trr1
(µs)
trr2
(µs)
Part No.
Part No.
VRM IF (AV) IFSM
VRM IF (AV) IFSM
(V)
(A)
(A)
(V)
(A)
(A)
max max max max
max max max max
EU 2YX
1.2
1.5
2.0
25 –40 to +150
30 –40 to +150
50 –40 to +150
70 –40 to +150
80 –40 to +150
70 –40 to +150
0.9
0.95
0.95
1.3
0.97
1.3
2.5
2.5
1.7
2.0
1.5
1.35
1.3
2.5
2.5
1.3
1.4
1.4
1.5
1.3
0.97
2.5
2.5
2.5
1.7
2.0
1.5
1.35
1.3
2.5
2.5
1.3
1.4
1.4
1.2
1.5
1.1
0.95
1.5
1.2
1.3
2.5
2.5
2.5
2.0
1.5
1.35
1.3
2.5
2.5
2.5
10
10
10
10
10
10
10
10
10
10
10
10
5
0.2
0.2
0.2
0.4
0.4
0.4
0.4
0.4
0.4
0.4
1.5
4.0
4.0
1.5
1.5
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
1.5
4.0
4.0
1.5
1.5
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
1.5
4.0
4.0
1.5
1.5
1.5
0.08
0.08
0.08
0.18
0.18
0.18
0.18
0.18
0.18
0.18
0.6
4
5
6
8
7
8
3
4
2
5
2
4
5
3
4
2
3
4
5
8
7
5
3
4
2
5
2
4
5
EU02A
–40 to +150
–40 to +150
1.4
1.4
1.5
1.2
1.5
1.1
1.1
0.95
1.5
1.2
1.3
2.5
2.0
1.3
2.5
1.5
1.5
1.6
3.0
1.3
1.5
2.5
1.6
2.0
2.0
2.0
10
10
10
10
10
10
10
10
10
50
10
10
10
5
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
4.0
1.5
0.4
0.4
0.4
0.4
4.0
0.4
0.4
0.4
1.5
1.5
4.0
0.18
0.18
0.18
0.18
0.18
0.18
0.18
0.18
0.18
0.18
0.18
0.18
0.18
1.3
3
4
15
RU 2YX
RU 3YX
RU 4Y
RU 30Y
RU 4YX
EU01Z
EU 1Z
AU01Z
RF 1Z
AS01Z
EH 1Z
RH 1Z
ES01Z
ES 1Z
AU02Z
EU02Z
EU 2Z
RU 2Z
RU 4Z
RU 30Z
RU 1
EU 2A
RU 2
1.0
1.1
20 –40 to +150
20 –40 to +150
20 –40 to +150
100
5
RU 2AM
RU 3A
RU 20A
RU 3AM
RU 30A
RU 4A
RU 31A
RU 4AM
RU 1B
RF 1B
RH 1B
RS 1B
RU 2B
RU 3B
RU 4B
RU 1C
RH 1C
RU 2C
RU 3C
RU 4C
ES01F
ES 1F
3.5
6
5
6
7
8
7
8
4.0
600 1.5
–40 to +150
50
–40 to +150
15
–40 to +150
0.25
0.5
–40 to +150
2.0
3.0
3.5
200 –40 to +150
50 –40 to +150
150 –40 to +150
70 –40 to +150
15 –40 to +150
15 –40 to +150
35 –40 to +150
30 –40 to +150
20 –40 to +150
20 –40 to +150
50 –40 to +150
15 –40 to +150
35 –40 to +150
20 –40 to +150
20 –40 to +150
50 –40 to +150
15 –40 to +150
15 –40 to +150
20 –40 to +150
30 –40 to +150
35 –40 to +150
0.6
1.3
0.25
1.3
0.6
200
–40 to +150
30
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
5
0.6
5
0.7
0.8
–40 to +150
0.6
800 0.7
1.0
10
10
10
10
10
5
0.6
25 –40 to +150
0.18
0.18
0.18
0.18
0.18
0.18
0.18
0.18
0.18
0.18
0.18
0.6
0.18
0.18
0.18
0.18
1.3
–40 to +150
15
1.1
6
8
1.0
3.5
–40 to +150
3.0
20 –40 to +150
70 –40 to +150
80 –40 to +150
–40 to +150
0.2
0.6
5
1000 0.8
1.5
10
10
50
10
10
10
0.18
0.18
0.18
0.6
6
8
3
4
5
EU01
0.25
0.5
15 –40 to +150
–40 to +150
2.5
EU 1
–40 to +150
20
1500 0.5
2000 0.2
AU01
15 –40 to +150
15 –40 to +150
20 –40 to +150
30 –40 to +150
35 –40 to +150
–40 to +150
0.6
RF 1
RC 2
20 –40 to +150
1.3
AS01
0.6
EH 1
1.3
RH 1
1.3
Frame 2-pin Type
ꢀꢀ
ES01
–40 to +150
30
10
10
10
10
10
10
10
10
10
10
50
10
10
10
10
10
10
10
5
0.6
0.7
0.8
1.0
1.1
1.5
2.0
3.0
3.5
4
Absolute Maximum Ratings
Tj Tstg
(ºC)
FMU-G2YXS 100 10.0 100 –40 to +150
Electrical Characteristics
ES 1
–40 to +150
0.6
400
Fig.
No.
VF
(V)
IR
(µA)
trr1
(µs)
trr2
(µs)
Part No.
AU02
25 –40 to +150
15 –40 to +150
15 –40 to +150
20 –40 to +150
20 –40 to +150
50 –40 to +150
200 –40 to +150
50 –40 to +150
150 –40 to +150
70 –40 to +150
–40 to +150
0.18
0.18
0.18
0.18
0.18
0.18
0.18
0.18
0.18
0.18
0.18
0.18
0.18
0.18
0.6
2
3
4
5
VRM IF (AV) IFSM
(V) (A) (A)
EU02
max max max max
EU 2
1.0 50 0.2 0.08 11
RU 2M
RU 3
6
RU 3M
RU 30
RU 4
Center-tap Type
ꢀꢀ
7
8
7
8
5
3
4
5
2
4
5
3
4
5
Absolute Maximum Ratings
Tj Tstg
(ºC)
Electrical Characteristics
Fig.
No.
VF
(V)
IR
(µA)
trr1
(µs)
trr2
(µs)
Part No.
RU 31
RU 4M
RU 1A
EU01A
EU 1A
RF 1A
AS01A
EH 1A
RH 1A
ES01A
ES 1A
RS 1A
VRM IF (AV) IFSM
(V)
(A)
(A)
max max max max
FMU-21S,R
FMU-12S,R
FMU-22S,R
FMU-32S,R
FMU-14S,R
FMU-24S,R
FMU-34S,R
100 10.0
5.0
40
30
40
80
30
40
80
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
1.5
1.5
1.5
1.5
1.5
1.5
1.5
50
50
50
50
50
50
50
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.18
0.18
0.18
9
9
0.25
15 –40 to +150
–40 to +150
200 10.0
20.0
15 –40 to +150
20 –40 to +150
30 –40 to +150
35 –40 to +150
–40 to +150
0.18 10
5.0
0.18
9
0.18
600
0.6
1.3
400 10.0
20.0
1.3
0.18 10
10
10
10
0.6
0.7
30 –40 to +150
–40 to +150
0.6
0.6
111
General-purpose Diodes
Ultra Fast Recovery Rectifier Diodes
ꢀ Surface-mount Type
ꢀ Frame 2-pin Type
ꢀtrr1=IF/IRP =1:1, trr2=IF/IRP=1:2
Absolute Maximum Ratings
Tj Tstg
(ºC)
Electrical Characteristics
Fig.
Absolute Maximum Ratings
Tj Tstg
(ºC)
–40 to +150 1.15
–40 to +150 0.98 250
Electrical Characteristics
Fig.
No.
VF
(V)
IR
(µA)
trr1
(µs)
trr2
(µs)
VF
(V)
IR
(µA)
trr1
(ns)
trr2
(ns)
Part No.
Part No.
VRM IF (AV) IFSM
VRM IF (AV) IFSM
No.
(V)
(A)
(A)
(V)
(A)
(A)
max max max max
max max max max
SFPL-52
SFPL-62
200
200
0.9
1.0
25
25
–40 to +150 0.98
–40 to +150 0.98
10
10
50
50
35
35
FMP-G12S
FML-G12S
FMN-G12S
FML-G22S
FML-G13S
FMN-G14S
FML-G14S
FMG-G26S
FMN-G16S
FML-G16S
FMG-G36S
FML-G26S
FMD-G26S
FMG-G2CS
FMG-G3CS
50
150
40
70
30
50
30
35
50
35
50
50
35
50
40
30
50
70
1
65
5.0
200
11
100 –40 to +150 0.92 100
10.0 150 –40 to +150 0.98 500
100
40
300
400
5.0
5.0
4.0
5.0
8.0
70 –40 to +150 1.3
100
50
50
11
11
ꢀ Axial Type
–40 to +150 1.0
70
100
50
Absolute Maximum Ratings
Tj Tstg
(ºC)
Electrical Characteristics
Fig.
No.
VF
(V)
IR
(µA)
trr1
(ns)
trr2
(ns)
–40 to +150 1.3
100
500
50
Part No.
VRM IF (AV) IFSM
(V)
(A)
(A)
50 –40 to +150 2.5
100
100
50
max max max max
–40 to +150 1.2
50
11
AG01Y
EG01Y
EG 1Y
RG 10Y
RG 2Y
RG 4Y
AG01Z
EG01Z
EG 1Z
AL01Z
EN 01Z
RG 10Z
RG 2Z
EL 1Z
EL02Z
RN 1Z
RL 10Z
RL 2Z
RN 2Z
RN 3Z
RG 4Z
RL 3Z
RL 4Z
RN 4Z
AG01
25 –40 to +150 1.2
30 –40 to +150 1.2
30 –40 to +150 1.2
100
100
100
500
500
1000
100
50
100
100
100
100
100
100
100
100
100
50
50
50
50
50
50
50
50
50
50
35
50
50
50
50
30
50
35
35
50
50
50
35
35
50
50
50
50
50
50
50
35
50
35
50
50
50
50
50
35
50
35
35
80
80
50
50
50
50
80
2
3
4
5
6
8
2
3
4
2
3
5
6
4
3
1.0
1.1
1.5
3.5
0.7
0.8
1.0
–40 to +150 1.5
100
500
100
100
50
600
80 –40 to +150 2.5
100
65
12
11
70
–40 to +150 1.1
50
–40 to +150 1.7
10.0 100
–40 to +150 1.1
–40 to +150 1.7
50
100 –40 to +150 1.3
4.0
5.0
30 –40 to +150 4.0
60 –40 to +150 3.5
100
150
11
12
1000
–40 to +150 1.8
15
100
–40 to +150 1.9
15 –40 to +150 1.7
25 –40 to +150 0.98
50 –40 to +150 0.92
50
100
10
ꢀ Center-tap Type
100
100
100
100
40
Absolute Maximum Ratings
Tj Tstg
(ºC)
Electrical Characteristics
–40 to +150 1.5
50
500
500
100
50
1.2
1.5
Fig.
No.
VF
(V)
IR
(µA)
trr1
(ns)
trr2
(ns)
Part No.
VRM IF (AV) IFSM
–40 to +150 1.5
(V)
(A)
(A)
20 –40 to +150 0.98
25 –40 to +150 0.98
60 –40 to +150 0.92
max max max max
500 100
150 40
500 100
250 40
1000 100
600 40
500 100
50 50
500 100
FMG-12S,R
FML-12S
–40 to +150 1.8
–40 to +150 0.98
–40 to +150 1.8
–40 to +150 0.98
–40 to +150 1.8
–40 to +150 0.98
50
30
50
30
50
30
50
35
50
35
35
50
50
35
50
35
50
35
50
50
35
200
5.0
35
20
100
50
5
6
9
10
9
–40 to +150 0.98
30
50
FMG-22S,R
FML-22S
200 10.0
65
2.0
3.0
3.5
–40 to +150 0.98
100
50
50
70 –40 to +150 0.92
100
100
100
50
FMG-32S,R
FML-32S
20.0 150
–40 to +150 0.92
80
50
7
8
7
–40 to +150 1.7
1000
50
FMG-13S,R
FML-13S
35 –40 to +150 1.8
40 –40 to +150 1.3
65 –40 to +150 1.8
70 –40 to +150 1.3
100 –40 to +150 1.3
150 –40 to +150 1.8
35 –40 to +150 2.0
40 –40 to +150 1.3
65 –40 to +150 2.0
70 –40 to +150 1.3
–40 to +150 0.95
80
5.0
300 10.0
20.0
–40 to +150 0.95
150
50
50
8
FMG-23S,R
FML-23S
120 –40 to +150 0.92
100
100
100
100
100
100
100
50
100
200
50
50
–40 to +150 1.8
15
100
50
2
3
4
5
6
4
6
8
7
3
2
4
5
0.7
0.8
1.2
EG01
–40 to +150 2.0
FML-33S
10
9
EG 1
15 –40 to +150 1.8
50
FMG-33S,R
FMG-14S,R
FML-14S
1000 100
500 100
RG 10
RG 2
–40 to +150 1.8
50
500
500
10
5.0
400
–40 to +150 1.8
50
500 100
100 50
1000 100
200 50
50
EL 1
1.5
2.0
3.0
3.5
20 –40 to +150 1.3
40 –40 to +150 1.3
80 –40 to +150 1.8
80 –40 to +150 1.3
10 –40 to +150 2.0
15 –40 to +150 1.8
10 –40 to +150 2.0
FMG-24S,R
FML-24S
8.0
400
RL 2
10
10.0
RG 4
500
100
100
100
100
500
500
50
100
50
FMG-34S,R
FML-34S
16.0 100 –40 to +150 2.0
20.0 100 –40 to +150 1.3
RL 3
10
9
EG01A
AG01A
EG 1A
RG 10A
RG 2A
RL 2A
RG 4A
RL 3A
RL 4A
AP01C
EP01C
RU 1P
EG01C
RG 1C
RG 4C
RP 1H
100
100
100
100
100
50
0.5
0.6
1.0
1.2
2.0
3.0
0.2
FMG-26S,R
FMG-36S,R
FML-36S
6.0
50 –40 to +150 2.2
80 –40 to +150 2.2
500 100
600 15.0
1000 100
10
–40 to +150 2.0
50
20.0 100 –40 to +150 1.7
100
65
600
–40 to +150 2.0
6
30 –40 to +150 1.55
50 –40 to +150 2.0
60 –40 to +150 1.7
80 –40 to +150 1.5
500
50
100
50
8
7
8
2
3
5
3
5
8
5
ꢀ Bridge Type
Absolute Maximum Ratings
Tj Tstg
(ºC)
100 –40 to +150
Electrical Characteristics
50
50
Fig.
No.
VF
(V)
IR
(µA)
trr1
(ns)
trr2
(ns)
Part No.
VRM IF (AV) IFSM
–40 to +150 4.0
100
5
200
200
100
100
100
100
200
5
(V)
(A)
(A)
–40 to +150 4.0
max max max max
0.4
0.5
0.7
2.0
0.1
10 –40 to +150 4.0
10 –40 to +150 3.3
10 –40 to +150 3.3
60 –40 to +150 3.0
5
RBV-602L
200
6
1
250 50 35
13
1000
2000
50
20
500
20
5
–40 to +150 7.0
112
General-purpose Diodes
Schottky Barrier Diodes
■ Surface-mount Type
■ Frame 2-pin Type
Absolute Maximum Ratings
Electrical Characteristics
Absolute Maximum Ratings
Electrical Characteristics
H•IR
H•IR
(mA)
Fig.
No.
Fig.
No.
VF
(V)
IR
(mA)
max
VF
(V)
IR
Part No.
Part No.
Tj
Tstg
Tj
Tstg
VRM
(V)
IF (AV) IFSM
VRM
(V)
IF (AV) IFSM
(mA)
(mA)
max
Tam=1a0x0ºC
Tam=1a0x0ºC
(A)
(A)
(A)
(A)
max
max
(ºC)
(ºC)
SFPJ-53
SFPE-63
SFPJ-63
SFPJ-73
SPJ-63S
SFPB-54
SFPB-64
SFPE-64
SFPB-74
SPB-G34S
SPB-G54S
SPB-64S
SFPB-56
SFPB-66
SFPB-76
SPB-G56S
SFPB-59
SFPB-69
1.0
30
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
0.45
0.55
0.45
0.45
0.45
0.55
0.55
0.6
1.0
0.2
2.0
3.0
3
10
FMB-G14
3.0
5.0
60
60
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
0.55
0.55
0.55
0.62
0.81
5
5
100
20
FMB-G14L
FMB-G24H
FMB-G16L
FMB-G19L
40
100
65
11
(Tj=150ºC)
2.0
40
1
14
1
30
20
30
10.0
6.0
150
50
10
5
3.0
6.0
1.0
1.5
50
50
30
60
40
60
50
60
50
10
25
40
60
10
40
60
90
50
11
11
30
4.0
60
5
35
(Tj=125ºC)
1
50
50
5
20
0.2
5
(Tj=150ºC)
2.0
■ Center-tap Type
40
0.5
50
50
50
50
7.5
15
20
50
5
Absolute Maximum Ratings
Tj Tstg
(ºC)
Electrical Characteristics
3.0
5.0
6.0
0.7
0.55
0.55
0.55
0.62
0.69
0.62
0.7
3.5
5
H•IR Fig.
VF
(V)
max
IR
(mA)
max
Part No.
14
1
VRM
(V)
IF (AV) IFSM
(mA)
No.
Tam=1a0x0ºC
(A)
(A)
3.5
1
FMB-24
4.0
6.0
50
60
60
80
75
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
0.55
0.55
0.55
0.6
5
5
35
1
FMB-24M
FMB-24L
FME-24L
FMB-34S
FMB-24H
FME-24H
MPE-24H
FMB-34
35
35
30
35
50
50
60
90
2.0
9
2
5
10
5.0
0.7
1.5
3
14
1
0.5
5
0.81
0.81
1
12
15
30
0.58
0.55
0.6
10
9
40
2
10
7.5
0.75
0.75
10
20
1
100
50
0.6
15
10
(Tj=150ºC)
150
300
40
0.55
0.55
0.62
0.62
0.62
0.62
0.81
0.81
0.81
0.81
65
100
20
■ Axial Type
FMB-34M
FMB-26
Absolute Maximum Ratings
Electrical Characteristics
H•IR
4.0
9
10
9
Fig.
No.
VF
(V)
IR
(mA)
max
Part No.
VRM
Tj
Tstg
FMB-26L
FMB-36
10
15
30
50
2.5
5
50
IF (AV) IFSM
(A)
(mA)
Tam=1a0x0ºC
60
90
(V)
(A)
100
150
50
75
max
(ºC)
50
AK 03
EK 03
EK 13
25
40
40
60
50
50
80
25
40
40
60
50
80
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
0.55
0.55
0.55
0.55
0.55
0.45
0.55
0.55
0.55
0.55
0.55
0.55
0.55
0.62
0.62
0.62
0.62
0.62
0.62
0.81
0.81
0.81
0.81
0.81
0.81
1
5
5
5
5
3
5
1
5
5
5
5
5
1
1
1
1
2
3
1
1
2
2
3
5
2
3
4
5
6
FMB-36M
FMB-29
10
3
150
15
(Tj=100ºC)
1.0
50
50
50
50
30
50
4.0
8.0
15
20
1.5
1.7
2.5
FMB-29L
FMB-39
60
5
35
RK 13
RK 33
RJ 43
RK 43
AK 04
EK 04
EK 14
RK 14
RK 34
RK 44
AK 06
EK 06
EK 16
RK 16
RK 36
RK 46
AK 09
EK 09
EK 19
RK 19
RK 39
RK 49
30
60
10
15
50
10
FMB-39M
150
60
3.0
1.0
8
50
2
3
4
5
6
8
2
3
4
5
6
8
2
3
4
5
6
8
(Tj=100ºC)
■ Bridge Type
50
50
50
50
50
7.5
7.5
15
15
20
35
5
Absolute Maximum Ratings
Tj Tstg
(ºC)
–40 to +150
Electrical Characteristics
H•IR
1.5
1.7
2.5
3.0
40
60
90
Fig.
No.
VF
(V)
IR
(mA)
max
Part No.
VRM
(V)
IF (AV) IFSM
(mA)
Tam=1a0x0ºC
(A)
(A)
max
RBV-406B
60
4.0
40
0.62
2
20
13
0.7
1.5
10
25
2.0
3.5
40
70
0.7
1.5
10
40
5
10
10
15
35
2.0
3.5
50
60
113
General-purpose Diodes - External Dimensions
(Unit: mm)
Fig. 1
Fig. 2
Fig. 3
Fig. 4
4.5±0.2
0.57±0.02
0.78±0.05
0.6±0.05
Cathode marking
Cathode marking
Cathode marking
2.4±0.1
2.7±0.2
2.7±0.2
1.35±0.4
1.1±0.2
1.5±0.2
1.35±0.4
2.0min
+0.4
5.1
–0.1
Fig. 5
Fig. 6
Fig. 7
Fig. 8
0.78±0.05
0.98±0.05
1.2±0.05
1.4±0.1
Cathode marking
Cathode marking
Cathode marking
Cathode marking
4.0±0.2
4.0±0.2
5.2±0.2
6.5±0.2
Fig. 9
Fig. 10
4.2
2.8
5.0
15.0
9.0
10.0
3.3
C0.5
3.3
a
b
c
a
b
2.6
2.3
3.4
1.0
0.65+–00..12
1.35
1.35
0.85
5.45
5.45
2.6
0.45
2.54
2.54
a) Part No.
b) Polarity
c) Lot No.
a) Part No.
b) Lot No.
S type
(SBD)
R type
S type
(SBD)
R type
114
General-purpose Diodes - External Dimensions
(Unit: mm)
Fig. 13
Fig. 11 Full-mold
Fig. 12 Full-mold
5.0
15.0
9.0
3.2±0.1
4.6
4.2
2.8
10.0
3.3
30
3.6
C3
3.3
a
b
+
a
b
c
–
2.2
2.6
2.3
3.4
1.0
4-1.0
0.7
0.65–+00..12
10 7.5 7.5
2.7
1.35
0.85
a) Part No.
b) Lot No.
5.45
5.45
2.6
0.45
5.08
a) Part No.
b) Polarity
c) Lot No.
Fig. 14
Fig. 15
2.3±0.4
10.2
6.5±0.4
5.4±0.4
4.44
1.3
5.4
4.1
0.55±0.1
2.9
a
b
4.9
c
1.27
1.2
2.59
0 to 0.25
0.86
1.15±0.1
2.29±0.5
0.8±0.1
0.8±0.1
2.29±0.5
0.76
2.54
0.55±0.1
0.4
2.54
1.5max
a) Part No.
b) Polarity
c) Lot No.
1
2
3
115
General-purpose Diodes - Taping Specifications
Taping Specifications
Taping
Name
Packaging
Quantity
Taping Dimensions (mm)
Packaging Dimensions (mm) and Markings
Emboss taping
Reel
1.5 +–00.1
4.0±0.1
4.5±0.2
Marking of Part No.,
Lot No., quantity, etc.
2.0±0.5
13±0.5
V
1,800 pcs.
per reel
1.35±0.4
1.35±0.4
1.1±0.2
1.5±0.2
2.0min
5.1+–00..14
21±0.8
4.0±0.1
2.0
R1.0
Pull out direction
A suffix "V" is
added to Part
No. for tape
packaging.
14 ±1.5
2.0±0.5
178 ±2
3.1
(1) The cathode is on the right-hand side when viewed in the pull out direction.
(2) The electrode side of the product is on the bottom when casing.
(3) A leader tape of 150 to 200 mm in length is provided.
(4) The leading and trailing edge of the leader tape are provided with a pitch of at least 10 mm.
(5) Reversed polarity taping available on request (specify taping name "VL").
Axial taping
Reel
Marking of Part No.,
Lot No. and quantity
0.5max
1.0+–10..05
5,000 pcs.
per reel
15±2
Flange
Core
V
2.7 body
2.4 body
(Blue)
(White)
25±0.1
81±2
3,000 pcs.
(4 body)
+5
0
+5
0
52.0+1
0
6.0
6.0
A suffix "V" is
added to Part
No. for tape
packaging.
75±2
0.5max
Stopper
Ammunition (Ammo) pack
Axial taping
Broken lines: perforations
2,000 pcs.
0.5max
1.0+–01..50
per box
(2.7 body)
V1
3000 pcs.
(2.4 body)
255max
A suffix "V1" is
added to Part
No. for tape
packaging.
(Blue)
(White)
1000 pcs.
(4 body)
+5
+5
0
52.0+1
Marking of Part No.,
Lot No. and quantity
0
0
6.0
6.0
0.5max
Ammunition (Ammo) pack
Axial taping
Broken lines: perforations
+
0.5
0.5max
1.0---1.0
2,000 pcs.
V0
per box
(2.7 body)
3000 pcs.
(2.4 body)
A suffix "V0" is
added to Part
No. for tape
packaging.
(Blue)
(White)
255max
Marking of Part No.,
+
+
5
0
5
26.0+
1
0
0
6.0
6.0
0.5max
Lot No. and quantity
Reel
Axial taping
Marking of Part No.,
Lot No. and quantity
0.5max
1.0+–10..05
15±2
Flange
Core
V3
1,500 pcs.
per reel
(5.2 body)
A suffix "V3" is
added to Part
No. for tape
packaging.
25±0.1
81±2
(Blue)
(White)
+5
0
+5
52.0+1
75±2
0
0
6.0
6.0
Stopper
0.5max
116
General-purpose Diodes - Taping Specifications
Taping Specifications
Taping
Name
Packaging
Quantity
Taping Dimensions (mm)
Packaging Dimensions (mm) and Markings
Broken lines:
Axial taping
0.5max
1.0+–10.05
perforations
Ammunition
(Ammo)
pack
V4
1,000 pcs.
per box
Company
mark
A suffix "V4" is
added to Part
No. for tape
packaging.
(5.2 body)
(Blue)
(White)
+5
+5
52.0+1
0
0
0
6.0
6.0
255max
0.5max
Marking of Part No., Lot No. and quantity.
6.35±1.3
12.7±1.0
Radial taping
Ammunition (Ammo) pack
2.6max
Broken lines:
perforations
+
2.0
---
0
4,000 pcs.
per box
4.2
max
W
±1.0
±1.0
12.7
12.7
ANODE
C
A
T H
O
D
E
2.7 body
0.6 leads only
A suffix "W" is
added to Part
No. for tape
packaging.
340max
5.0±0.5
12.7±0.3
3.85±0.7
4.0±0.2
Marking of Part No., Lot No. and quantity.
Radial taping
(applies to A0 series)
Ammunition (Ammo) pack
6.35±1.3
12.7±1.0
0±2.0
WS
Marking of Part No.,
Lot No. and quantity
+0.8
A suffix "WS" is
added to Part
No. for tape
3.85±0.7
4.0±0.2
–0.2
5.0
12.7±0.3
2,500 pcs.
per box
ANODE
packaging.
C A
T
H
O
D
E
5.0±1.0
Radial taping
(applies to A0 series)
(2.4 body)
0±2.0
+0.8
–0
5.0
340max
2.75±0.5
1.5
30º
WK
4.0±0.3
A suffix "WK" is
added to Part
No. for tape
12.7±0.3
12.7±1.0
3.85±0.7
3.0±0.2
packaging.
117
General-purpose Diodes - Taping Specifications
Power Surface-mount - Taping Specifications
Taping
Name
Packaging
Quantity
Taping Dimensions (mm)
Packaging Dimensions (mm) and Markings
Part No.
Materials
Pull out direction
Disc: both-face white
corrugated cardboard
Core: foamed styrol
Quantity
Taping name
(type)
Lot No.
VL
A suffix "VL" is
added to Part
No. for tape
packaging.
3,000 pcs.
per reel
2.0±0.1
1.5+–00.1
4.0±0.1
8.0±0.1
3.4 max
R40±1
4±0.5
(6.0)
0.1
0.3±
1.6+–0.1
6.8±0.1
Pull out direction
VR
3,000 pcs.
per reel
13±1
80±1
330±2
A suffix "VR" is
added to Part
No. for tape
packaging.
High-voltage Diodes - Taping Specifications
Taping
Name
Packaging
Quantity
Taping Dimensions (mm)
Packaging Dimensions (mm) and Markings
Axial taping
Part No.
Lot No.
Quantity
V1
5,000 pcs.
per reel
29±1.5
75±1.5
A suffix "V1" is
added to Part
No. for tape
packaging.
1.0max
6±1.0
58±1
6±1.0
340±2
Axial taping
Part No.
Lot No.
Quantity
VD
8,000 pcs.
per reel
29±1.5
75±1.5
1.0max
6±1.0
A suffix "VD" is
added to Part
No. for tape
packaging.
58±1
6±1.0
340±2
118
General-purpose LEDs
Uni-Color LED Lamp
Electro-optical characteristics (Ta=25ºC)
Absolute Maximum Ratings
(Ta=25ºC)
Ratings
V
(V)
I
V
λp
(nm)
Emitting
color
Lens
color
F
Part No.
Chip
material
Ratings
(mcd)
Condition
Parameter
Unit
GaP GaAsP GaA As
30
–0.45
A GaInP InGaN GaN
typ
2.0
max
typ
I
F
(mA)
20
typ
Ultra high-
Clear
IF
∆IF
IFP
mA
mA/ºC
mA
V
SELU1250CM
SEL1250SM
SEL1250RM
SEL1850AM
SEL1850DM
SEL1950KM
SEL1450EKM
SEL1450GM-YG
SEL1550CM
SELU1D50CM
SELU1E50CM
SEL1615C
2.5
900
635
A GaInP
intensity red
Tinted
red
75
48
Above 25ºC
Red
1.9
2.5
20
630
GaAsP
Diffused
red
100
70
f=1kHz, tw=100µs
Tinted
orange
90
VR
3
4
5
Amber
Orange
Green
1.9
1.9
2.0
2.5
2.5
2.5
20
20
20
610
587
560
GaAsP
GaAsP
GaP
Diffused
orange
60
Top
Tstg
ºC
–30 to +85
–30 to +100
–25 to +85
Tinted
orange
96
4
ºC
Tinted
green
190
120
72
Diffused
green
Pure green
Clear
Clear
Clear
Clear
2.0
3.3
3.3
2.5
4.0
4.0
20
20
20
20
10
20
10
10
10
20
20
20
20
555
525
470
660
700
630
610
587
570
560
635
615
560
GaP
InGaN
InGaN
GaA As
GaP
Uintletnrsaityhigh-
6000
1850
700
1.4
12
pure green
Electro-optical characteristics (Ta=25ºC)
Ultra high-
V
F
I
V
(mcd)
λp
(nm)
Emitting
color
Lens
color
intensity blue
Part No.
Chip
material
(V)
High-
Condition
1.75 2.2
5
6
intensity red
typ
2.0
max
typ
2.8
I
(mA)
typ
F
Diffused
red
Deep red
Red
SEL1111R
2.0
1.9
1.9
1.9
2.0
2.0
2.0
2.0
2.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
Diffused
red
SEL1110R
Diffused
red
SEL1211R
GaAsP
GaAsP
GaAsP
GaP
Diffused
white
Deep red SEL1110W
SEL1110S
2.5
2.8
4.5
1000
1200
26
5
700
GaP
Diffused
orange
Amber
Orange
Yellow
Green
SEL1811D
8.0
8.0
13
Tinted
red
Diffused
orange
SEL1911D
Diffused
white
SEL1610W
High-
Diffused
yellow
SEL1711Y
1.75
1.9
1.9
1.9
2.0
2.2
2.5
2.5
2.5
2.5
20
20
10
10
10
660
630
610
587
570
GaA As
GaAsP
GaAsP
GaAsP
GaP
intensity red
Clear
SEL1610C
Diffused
green
SEL1411G
30
GaP
Diffused
red
SEL1210R
Red
Ultra high-
SELU1253CMKT Clear
200
450
140
2.4
1.7
30
A
A
GaInP
GaInP
GaP
intensity red
Tinted
red
Ultra high-
SEL1210S
75
SELU1853CMKT Clear
Tinted
7
intensity amber
Diffused
orange
SEL1810D
Amber
18
Green
SEL1453CEMKT
green
1
Tinted
orange
Tinted
SEL1810A
37
SEL4110S
red
Deep red
2.0
1.9
1.9
1.9
2.0
2.5
2.5
2.5
2.5
2.5
5
20
10
10
10
700
630
610
587
570
GaP
Diffused
orange
Diffused
SEL1910D
Orange
14
SEL4110R
red
Tinted
Tinted
orange
SEL1910A
25
SEL4210S
red
Red
GaAsP
GaAsP
GaAsP
GaP
Diffused
Diffused
yellow
SEL4210R
red
17
SEL1710Y
Yellow
22
Tinted
Tinted
yellow
SEL4810A
orange
20
SEL1710K
65
Amber
Orange
Yellow
Green
Diffused
Diffused
green
SEL4810D
SEL4910A
SEL4910D
SEL4710K
SEL4710Y
SEL4410E
SEL4410G
15
SEL1410G
Green
32
orange
2.0
2.0
1.9
2.5
2.5
2.5
20
20
20
560
555
630
GaP
GaP
Tinted
orange
Tinted
green
26
8
SEL1410E
84
Diffused
orange
16
Clear
Pure green SEL1510C
50
Tinted
yellow
36
Diffused
red
SEL1210RM
Red
36
GaAsP
Diffused
yellow
14
Tinted
red
SEL1210SM
75
Tinted
green
87
Diffused
orange
SEL1810DM
Amber
18
2.0
2.0
2.0
2.5
2.5
2.5
20
20
10
560
555
700
GaP
GaP
GaP
Diffused
green
1.9
2.5
10
610
GaAsP
34
Tinted
orange
SEL1810AM
37
Clear
Pure green SEL4510C
45
Diffused
orange
SEL1910DM
Orange
19
Tinted
red
1.9
2.0
2.0
2.5
2.5
2.5
10
10
20
587
570
560
GaAsP
GaP
2
SEL4114S
Deep red
3.8
2.8
40
Tinted
orange
SEL1910AM
34
Diffused
red
SEL4114R
Tinted
yellow
Yellow
Green
SEL1710KM
SEL1410GM
SEL1410EM
65
Tinted
red
SEL4214S
Red
Diffused
green
1.9
1.9
1.9
2.0
2.5
2.5
2.5
2.5
20
10
10
10
630
610
587
570
GaAsP
GaAsP
GaAsP
GaP
30
Diffused
red
SEL4214R
24
GaP
Tinted
green
84
Tinted
orange
SEL4814A
Amber
20
Clear
Clear
Clear
Clear
Clear
Pure green SEL1510CM
Ultra high-
2.0
2.0
2.0
3.3
3.3
2.5
2.5
2.5
50
20
20
20
20
20
555
635
615
525
470
GaP
Diffused
orange
SEL4814D
15
SELU1210CXM
intensity red
280
570
A
A
GaInP
GaInP
Tinted
orange
SEL4914A
Orange
26
9
Ultra high-
SELU1810CXM
Diffused
orange
intensity amber
SEL4914D
11
3
Uintletnrsaityhigh-
Tinted
yellow
SELU1D10CXM
4.0 2000
4.0 600
InGaN
InGaN
pure green
SEL4714K
Yellow
38
Ultra high-
Diffused
yellow
SELU1E10CXM
intensity blue
SEL4714Y
27
Tinted
green
SEL4414E
Green
69
2.0
2.0
2.5
2.5
20
20
560
555
GaP
GaP
Diffused
green
SEL4414G
48
Pure green SEL4514C
Clear
26
119
General-purpose LEDs
Uni-Color LED Lamp
Electro-optical characteristics (Ta=25ºC)
Electro-optical characteristics (Ta=25ºC)
V
(V)
I
λp
(nm)
V
(V)
I
V
λp
(nm)
Emitting
color
Lens
color
V
Emitting
color
Lens
color
F
F
Part No.
Part No.
Chip
material
Chip
material
(mcd)
(mcd)
Condition
Condition
typ max typ
3.9
I
F
(mA)
typ
typ max typ
43
I
F
(mA)
20
typ
Tinted
red
Clear
SEL6110S
SEL6110R
SEL6210S
SEL6210R
SEL6810A
SEL6810D
SEL6910A
SEL6910D
SEL6710K
SEL6710Y
SEL6410E
SEL6410G
SEL6510C
SEL6510G
SEL6214S
SEL6814A
SELS6B14C
SEL6914A
SEL6914W
SEL6714K
SEL6714W
SEL6414E
SEL2510C
SEL2510G
SELU2D10C
SELU2E10C
SEL2E10C
SEL2215S
SEL2215R
SEL2815A
SEL2815D
SEL2915A
SEL2915D
SEL2715K
SEL2715Y
SEL2415E
SEL2415G
Deep red
Red
2.0
1.9
1.9
1.9
2.0
2.0
2.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
10
700
GaP
GaAsP
GaAsP
GaAsP
GaP
Pure green
2.0
2.5
555
GaP
Diffused
red
Diffused
green
2.6
41
18
22
9.6
22
11
37
11
90
30
42
9.6
18
9.0
120
8.0
5.0
66
30
42
18
12
45
60
90
81
44
4
8.2
1200
400
60
Tinted
red
Ultra high-
Clear
Clear
Clear
3.3
3.3
3.8
4.0
4.0
4.8
20
20
20
525
470
430
InGaN
InGaN
GaN
13
intensity pure green
20
10
10
10
20
20
630
610
587
570
560
555
Diffused
red
Ultra high-
intensity blue
Tinted
orange
Blue
Red
Amber
Orange
Yellow
Green
Diffused
orange
Tinted
red
45
1.9
1.9
1.9
2.0
2.0
2.5
2.5
2.5
2.5
2.5
20
10
10
10
20
630
610
587
570
560
GaAsP
GaAsP
GaAsP
GaP
Tinted
orange
Diffused
red
38
10
Diffused
orange
Tinted
orange
80
Amber
Orange
Yellow
Green
Tinted
yellow
Diffused
orange
60
Diffused
yellow
Tinted
orange
81
Tinted
green
Diffused
orange
53
14
GaP
Diffused
green
Tinted
yellow
130
110
110
72
Diffused
yellow
Clear
Pure green
GaP
Diffused
green
Tinted
green
GaP
Tinted
red
Diffused
green
Red
1.9
1.9
2.0
2.5
2.5
2.5
20
10
20
630
610
600
GaAsP
GaAsP
Tinted
orange
Clear
Amber
Pure green SEL2515C
Deep red SEL2111R
Orange SEL2911D
2.0
2.0
1.9
2.0
2.0
1.9
1.9
2.0
2.0
1.9
1.9
1.9
2.0
2.0
2.0
2.0
2.0
1.7
1.9
1.9
1.9
2.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
52
20
10
10
20
10
10
10
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
555
700
587
560
700
610
587
570
560
630
610
587
570
560
555
560
555
660
630
610
587
570
GaP
GaP
Ultra-high-
intensiti
light amber
Diffused
red
Clear
A
GaInP
0.7
3.3
18
Tinted
orange
Diffused
orange
GaAsP
GaP
15
16
Orange
1.9
2.0
2.0
2.5
2.5
2.5
10
20
20
587
570
GaAsP
GaP
Diffused
white
Diffused
green
Green
SEL2411G
11
Tinted
yellow
Diffused
red
Deep red SEL4117R
SEL4817D
Orange SEL4917D
1.1
7.5
7.5
14
GaP
Yellow
Green
Diffused
orange
Diffused
white
Amber
GaAsP
GaAsP
GaP
Tinted
green
Diffused
orange
560
558
555
630
587
570
560
555
GaP
Tinted
green
Diffused
yellow
Deep green SEL6414E-TG
Pure green SEL6514C
Yellow
Green
Red
SEL4717Y
SEL4417G
SEL1213C
SEL1813A
Diffused
green
Clear
2.0
1.9
1.9
2.0
2.0
2.0
2.5
2.5
2.5
2.5
2.5
2.5
20
20
20
20
20
20
GaP
GaAsP
GaAsP
GaP
16
GaP
Tinted
red
Tinted
red
Red
SEL6215S
7.0
8.0
8.0
15
GaAsP
GaAsP
GaAsP
GaP
Tinted
orange
Tinted
orange
Orange SEL6915A
Amber
Tinted
Clear
Yellow
Green
SEL6715C
SEL6415E
12
Orange SEL1913K
light orange
17
18
Tinted
green
Tinted
yellow
GaP
Yellow
Green
SEL1713K
SEL1413E
Tinted
green
Clear
Pure green SEL6515C
SEL2110S
GaP
12
GaP
Tinted
Tinted
red
Pure green SEL1513E
Green SEL6413E
5.0
14
GaP
light green
Diffused
red
Tinted
green
Deep red SEL2110R
SEL2110W
2.0
2.5
2.2
2.5
1.8
1.8
350
40
15
15
22
9.0
16
8.0
270
40
14
77
20
10
20
20
700
660
630
GaP
GaP
Diffused
white
Clear
GaP
Pure green SEL6513C
High-
5.0
80
High-
Tinted
Clear
SEL2610C
intensity red
1.75
1.9
GaA As
GaAsP
SEL2613CS-S
GaA As
GaAsP
GaAsP
GaAsP
GaP
light red
intensity red
Tinted
red
Clear
SEL2210S
Red
SEL2213C
SEL2813A
7.0
8.0
8.0
17
Diffused
red
Tinted
orange
Red
SEL2210R
SEL2210W
SEL2810A
SEL2810D
SEL2910A
SEL2910D
SELU2710C
SEL2710K
SEL2710Y
SEL2410E
SEL2410G
Amber
Diffused
white
Tinted
Orange SEL2913K
light orange
19
Tinted
orange
Tinted
yellow
Yellow
SEL2713K
SEL2413E
SEL2413G
Amber
1.9
2.5
10
610
GaAsP
GaAsP
13
Diffused
orange
Tinted
green
14
Green
2.0
2.5
20
560
GaP
Tinted
orange
Diffused
green
12
Orange
1.9
2.0
2.0
2.5
2.5
2.5
10
20
10
587
572
570
Diffused
orange
Tinted
green
Pure green SEL2513E
Deep red SEL1121R
2.0
2.0
1.9
1.9
2.0
2.0
2.5
2.5
2.5
2.5
2.5
2.5
5.0
0.9
3.0
3.8
7.0
12
20
10
10
10
10
20
555
700
610
587
570
560
GaP
GaP
Ultra high-
Diffused
red
Clear
A
GaInP
GaP
intensity yellow
Tinted
yellow
Diffused
orange
Amber
SEL1821D
GaAsP
GaAsP
GaP
Yellow
Green
Diffused
yellow
Diffused
orange
Orange SEL1921D
20
Tinted
green
Diffused
yellow
Yellow
Green
SEL1721Y
SEL1421G
2.0
2.5
20
560
GaP
Diffused
green
Diffused
green
GaP
120
General-purpose LEDs
Uni-Color LED Lamp
Electro-optical characteristics (Ta=25ºC)
Electro-optical characteristics (Ta=25ºC)
V
(V)
I
λp
(nm)
I
V
Emitting
color
Lens
color
V
V
(V)
λp
(nm)
F
Emitting
color
Lens
color
F
Part No.
Part No.
Chip
material
Chip
material
(mcd)
(mcd)
Condition
Condition
typ max typ
I
F
(mA)
20
typ
630
typ max typ
I
F
(mA)
20
typ
660
Diffused
red
High-
Red
SEL1222R
SEL1822D
1.9
1.9
1.9
2.5
2.5
2.5
9.0
4.8
4.5
7.8
12
GaAsP
GaAsP
GaAsP
SEL4628C-S
SEL4228C
SEL4828A
1.7
1.9
1.9
1.9
2.0
2.0
2.0
2.0
1.9
1.9
1.9
2.0
2.0
1.7
1.9
1.9
1.9
2.0
2.0
3.3
1.9
1.9
1.9
2.0
2.0
2.0
2.0
1.9
2.2
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.2
2.5
2.5
2.5
2.5
2.5
4.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
200
27
GaA As
GaAsP
GaAsP
GaAsP
GaP
Clear
Clear
intensity red
Diffused
orange
Amber
10
10
610
587
Red
20
10
10
10
20
20
20
20
10
10
10
20
20
20
20
20
20
20
10
20
20
20
20
20
20
20
20
630
610
587
570
560
558
555
630
610
587
570
560
660
630
610
587
560
555
470
630
610
587
570
560
555
635
630
Diffused
orange
Tinted
orange
Orange SEL1922D
Amber
14
21
Diffused
yellow
Tinted
orange
SEL1722Y
Yellow
Orange SEL4928A
14
2.0
2.5
10
570
GaP
28
Tinted
yellow
Tinted
yellow
SEL1722K
Yellow
Green
SEL4728K
SEL4428E
30
Diffused
green
Tinted
green
Green
SEL1422G
2.0
2.0
1.9
1.9
1.9
2.0
2.0
2.0
1.9
1.9
2.0
2.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
7.2
0.9
4.8
3.0
3.8
7.0
11
20
10
20
10
10
10
20
10
10
10
10
20
560
700
630
610
587
570
560
700
610
587
570
560
GaP
GaP
63
GaP
Diffused
red
Tinted
Deep red SEL1120R
Deep green SEL4428B-TG
Pure green SEL4528C
18
GaP
dark blue
Diffused
red
Clear
Red
SEL1220R
SEL1820D
GaAsP
GaAsP
GaAsP
GaP
30
GaP
Diffused
orange
Diffused
red
Amber
Red
SEL4229R
SEL4829A
21
GaAsP
GaAsP
GaAsP
GaP
22
Diffused
orange
Tinted
orange
Orange SEL1920D
Amber
18
Diffused
yellow
Tinted
orange
Yellow
Green
SEL1720Y
SEL1420G
Orange SEL4929A
18
29
Diffused
green
Tinted
yellow
GaP
Yellow
Green
SEL4729KH
SEL4429E
SEL5620C
SEL5220S
SEL5820A
60
Diffused
red
Tinted
green
Deep red SEL1124R
SEL1824D
Orange SEL1924D
0.5
4.0
3.0
6.0
15
GaP
60
GaP
Diffused
orange
High-
Amber
GaAsP
GaAsP
GaP
Clear
100
20
GaA As
GaAsP
GaAsP
GaAsP
GaP
intensity red
Diffused
orange
Tinted
red
23
Red
Diffused
yellow
Tinted
orange
Yellow
Green
SEL1724Y
SEL1424G
SEL4225C
SEL4225R
SEL4825A
SEL4825D
SEL4925A
SEL4925D
SEL4725K
SEL4725Y
SEL4425E
SEL4425G
Amber
12
Diffused
green
Tinted
orange
GaP
Orange SEL5920A
Green SEL5420E
12
30
Tinted
green
Clear
12
20
Red
1.9
1.9
1.9
2.0
2.5
2.5
2.5
2.5
20
10
10
10
630
610
587
570
GaAsP
GaAsP
GaAsP
GaP
Diffused
red
5.4
5.4
4.0
4.5
4.0
13
Pure green SEL5520C
Ultra high-
Clear
Clear
6.0
60
GaP
Tinted
orange
SELU5E20C
intensity blue
InGaN
GaAsP
GaAsP
GaAsP
GaP
Amber
Orange
Yellow
Green
Diffused
orange
Tinted
red
Red
SEL5221S
SEL5821A
35
Tinted
orange
Tinted
orange
Amber
60
Diffused
orange
Tinted
orange
24
Orange SEL5921A
60
31
Tinted
yellow
Yellow
Green
SEL5721C
SEL5421E
Clear
90
Diffused
yellow
Tinted
green
5.0
20
95
GaP
Tinted
green
Pure green SEL5521C
35
GaP
Clear
Clear
2.0
2.0
1.9
2.5
2.5
2.5
20
20
20
560
555
630
GaP
GaP
Diffused
green
Ultra high-
10
SELS5223C
intensity red
100
25
A
GaInP
Tinted
red
Clear
Clear
Pure green SEL4525C
6.6
12
Red
SEL5223S
GaAsP
SEL4226C
Red
SELS5823C
SELU5823C
SEL5823A
130
185
35
Clear
Clear
Ultra high-
GaAsP
2.0
2.5
20
615
A
GaInP
intensity amber
Diffused
red
SEL4226R
10
Tinted
orange
Tinted
orange
SEL4826A
Amber
5.4
4.5
6.0
4.5
14
Amber
Ultra-high-
intensiti
light amber
1.9
2.0
2.0
1.9
2.0
2.0
2.0
2.0
3.6
4.0
1.9
1.9
2.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
4.0
4.8
2.5
2.5
2.5
20
20
20
20
20
20
20
20
10
20
20
20
20
610
600
590
587
572
570
560
555
470
430
630
587
570
GaAsP
1.9
1.9
2.0
2.0
2.5
2.5
2.5
2.5
10
10
10
20
610
587
570
560
GaAsP
GaAsP
GaP
Diffused
orange
SEL4826D
SELS5B23C
SELS5923C
Clear
Clear
135
145
35
A
GaInP
GaInP
Tinted
orange
Ultra high-
SEL4926A
Orange
A
intensity orange
25
32
Diffused
orange
Tinted
orange
SEL4926D
Orange SEL5923A
GaAsP
Tinted
yellow
Ultra high-
SEL4726K
Yellow
SELU5723C
intensity yellow
Clear
Clear
155
60
A
GaInP
GaP
Diffused
yellow
SEL4726Y
8.6
20
Yellow
Green
SEL5723C
SEL5423E
Tinted
green
Tinted
green
SEL4426E
Green
40
GaP
GaP
Diffused
green
SEL4426G
14
Pure green SEL5523C
Ultra high-
Clear
Clear
Clear
13
GaP
Red
Green
Red
SEL4227C
SEL4427EP
SEL6227S
Clear
1.9
2.0
1.9
1.9
2.0
2.5
2.5
2.5
2.5
2.5
15
20
20
20
10
20
630
560
630
587
560
GaAsP
GaP
SELU5E23C
SEL5E23C
SEL5255S
110
20
InGaN
GaN
intensity blue
26
27
Tinted
green
19
Blue
Tinted
red
Tinted
red
14
GaAsP
GaAsP
GaP
Red
35
GaAsP
GaAsP
GaP
Tinted
orange
Tinted
orange
Orange SEL6927A
Green SEL6427EP
10
Orange SEL5955A
Yellow SEL5755C
25
33
Tinted
green
26
Clear
140
121
General-purpose LEDs
Bi-Color LED Lamp
Absolute Maximum Ratings
(Ta=25ºC)
Conditions
■■Internal wiring diagram
Parameter
Unit
Ratings
IF
∆IF
IFP
mA
mA/ºC
mA
V
30
–0.45
A
B
Above 25ºC
1
2
3
100
f=1kHz, tw=100µs
VR
4
Top
Tstg
ºC
–30 to +85
–30 to +100
ºC
Electro-optical characteristics (Ta=25ºC)
Electro-optical characteristics (Ta=25ºC)
V
(V)
I
λp
(nm)
V
(V)
I
V
λp
(nm)
Emitting Lens
V
Emitting Lens
F
F
Part No.
Part No.
color
color
color
color
(mcd)
(mcd)
Common
Common
Condition
Condition
typ
2.0
max
typ
15
I
F
(mA)
20
typ
typ
1.9
max
typ
25
I
F
(mA)
20
typ
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
Deep red
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.2
3.0
2.2
3.0
2.5
2.5
2.5
2.5
2.5
2.5
2.2
3.0
2.5
2.5
2.2
3.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
700
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
Red
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.2
3.0
2.5
2.5
2.5
2.5
630
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
SML11516C
SML1216C
Cathode
Cathode
Cathode
Cathode
Anode
SML72423C
SML72923C
SML78423C
SML79423C
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Anode
Pure green
Red
2.0
1.9
2.0
1.9
2.0
2.0
2.0
1.7
2.4
1.7
2.4
1.9
2.0
1.9
2.0
1.9
2.0
1.7
2.4
1.9
2.0
1.7
2.4
1.9
2.0
1.9
2.0
1.9
2.0
1.9
2.0
50
65
90
60
60
6.0
20
100
140
50
70
50
60
45
60
40
60
50
60
10
25
30
40
15
25
15
20
10
20
10
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
555
630
560
630
560
700
555
660
570
660
570
610
560
587
560
630
560
660
570
630
560
660
570
587
560
630
560
610
560
587
560
Green
Red
2.0
1.9
1.9
1.9
2.0
1.9
2.0
2.0
2.0
1.9
2.0
1.9
2.0
1.9
2.0
1.7
2.4
2.0
2.0
2.0
2.0
35
25
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
560
630
587
610
560
587
560
590
570
630
570
587
630
587
560
660
570
635
572
615
572
Green
Red
Orange
Amber
Green
Orange
Green
25
25
Diffused
white
SML1216W
SML1516W
SML16716CN
SML16716WN
SML1816W
SML19416W
SML12451W
SML16751WN
SML12460C
SML16760CN
SML19460C
SML72420C
SML78420C
SML79420C
38
Green
Deep red
Pure green
35
25
Diffused
white
35
34
High-
Ultra high-
150
40
intensity red
intensity orange
Clear
SMLS79723C
SML72755C
SML79255C
SML79455C
SML76755WN
SMLU72755C
SMLU78755C
Yellow
Yellow
Red
High-
45
intensity red
Diffused
white
Anode
Yellow
Amber
Green
Orange
Green
Red
Yellow
Orange
Red
75
40
Diffused
white
Cathode
Cathode
Cathode
Anode
45
Orange
Green
45
Diffused
white
75
39
High-
50
intensity red
Diffused
white
Diffused
white
Green
Yellow
50
35
High-
Ultra high-
160
170
280
170
intensity red
intensity red
Diffused
white
Clear
Clear
Cathode
Cathode
Ultra hiygehll-ow
Yellow
Red
intensity
Ultra hiagmhb-er
intensity
Clear
Clear
Clear
Clear
Clear
Clear
Cathode
Anode
Ultra hiygehll-ow
Green
intensity
High-
intensity red
36
Yellow
Orange
Green
Red
Cathode
Cathode
Cathode
Cathode
Green
Amber
Green
Orange
Green
37
122
General-purpose LEDs
Surface Mount LED
Absolute Maximum Ratings
(Ta=25ºC)
Conditions
■■Internal wiring diagram
Ratings
Parameter
Unit
GaP GaAsP GaA As
A
GaInP InGaN GaN
1
2
IF
∆IF
IFP
mA
mA/ºC
mA
V
30
B
A
–0.45
Above 25ºC
4
3
70
f=1kHz, tw=100µs
VR
4
5
Top
Tstg
ºC
–30 to +85
–25 to +85
ºC
–30 to +100
■■Uni-Color
■■Bi-Color
Electro-optical characteristics (Ta=25ºC)
Electro-optical characteristics (Ta=25ºC)
V
(V)
I
λp
(nm)
V
(V)
I
V
λp
(nm)
Emitting
color
Lens
color
V
Emitting
color
Lens
color
F
F
Part No.
Part No.
Chip
(mcd)
typ
(mcd)
typ
Condition
Condition
IF (mA)
material
typ
2.0
max
2.5
I
F
(mA)
20
typ
typ
1.9
max
2.5
typ
Deep red SEC1101C
High-
Clear
Clear
Clear
Clear
Clear
Clear
Clear
1.5
100
10
700
GaP
GaA As
GaAsP
GaAsP
GaAsP
GaP
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
Red
10
20
20
20
20
20
10
20
5.0
5.0
10
5.0
20
20
20
30
10
10
20
30
50
50
50
50
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
630
SEC2422C
SEC2442C
SEC2462C
SEC2492C
SEC2552C
SEC2592C
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
SEC1601C
intensity red
1.7
1.9
1.9
1.9
2.0
2.0
2.0
2.0
3.3
3.3
3.9
1.7
1.9
1.9
1.9
1.9
1.9
1.9
2.0
2.0
2.0
2.0
2.2
2.5
2.5
2.5
2.5
2.5
2.5
2.5
4.0
4.0
4.8
2.2
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
20
20
20
20
20
20
20
20
20
20
20
20
20
20
3
660
630
610
587
570
560
558
555
525
470
430
660
635
630
615
610
590
587
570
560
558
555
Green
Green
Green
2.0
2.0
2.0
1.7
2.0
1.9
2.0
2.0
2.0
1.9
2.0
1.7
2.0
1.9
2.0
2.0
2.0
1.9
2.0
1.7
2.0
2.0
2.0
2.5
2.5
2.5
2.2
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.2
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.2
2.5
2.5
2.5
560
560
560
660
560
587
560
555
555
587
555
660
570
610
560
555
555
587
560
660
570
570
570
Red
SEC1201C
SEC1801C
SEC1901C
SEC1701C-YG
SEC1401C
Amber
Orange
Yellow
Green
16
High-
13
intensity red
25
Green
Orange
Green
40
22
GaP
42
Tinted
green
Deep reen SEC1401E-TG
Pure green SEC1501C
11
GaP
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
8.0
150
50
GaP
Pure green
Pure green
Orange
Pure green
Ultra hpigurhe-
SECU1D01C
InGaN
InGaN
GaN
intensity
green
Ultra high-
SECU1E01C
SEC1E01C
SEC1603C
SECS1203C
SEC1203C
SELS1803C
SEC1803C
SELS1903C
SEC1903C
SEC1703C
SEC1403C
intensity blue
Blue
6.0
150
100
15
High-
High-
GaA As
intensity red
intensity red
SEC2762C-YG
SEC2484C
SEC2554C
SEC2494C
SEC2764C
SEC2774C
Ultra high-
A
GaInP
Yellow
Amber
intensity red
Red
GaAsP
Ultra high-
10
A
GaInP
Green
intensity amber
Amber
20
20
3
GaAsP
Pure green
Pure green
Orange
Green
Ultra high-
10
A GaInP 41
intensity orange
Orange
Yellow
Green
15
20
20
20
20
20
GaAsP
GaP
43
35
High-
33
GaP
intensity red
Deep green SEC1403E-TG Clear
Clear
15
GaP
Yellow
Yellow
Yellow
Pure green SEC1503C
10
GaP
123
General-purpose LEDs
Infrared LED
Absolute Maximum Ratings
(Ta=25ºC)
Ratings
Parameter
Unit
Ratings
IF
∆IF
IFP
mA
mA/ºC
mA
V
150
–1.33
Above 25ºC
1000
f=1kHz, tw=10µs
VR
5
Top
Tstg
ºC
–30 to +85
–30 to +100
ºC
Electro-optical characteristics (Ta=25ºC)
V
(V)
Ie
λp
(nm)
Lens
color
F
Part No.
Chip
(mW/sr)
typ
material
Condition
typ
1.3
max
typ
SID1010CM
SID1K10CM
SID1010CXM
SID1K10CXM
SID1050CM
SID303C
Clear
Clear
Clear
Clear
Clear
Clear
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.8
1.5
1.5
130
200
60
940
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
1.3
1.3
1.3
1.3
1.3
1.3
1.3
1.3
1.5
1.3
1.3
940
940
940
940
940
940
940
940
850
940
940
44
45
110
250
80
(Constant
voltage)
V
CC=3V,
R=2.2Ω
Transparent
light purpl
SID313BP
130
180
200
50
Transparent
light navy blue
SID1003BQ
SID307BR
46
47
Transparent
dark navy blue
SID1G307C
SID2010C
Clear
Clear
Clear
IF=50mA
7.0
14
SID2K10C
124
General-purpose LEDs - External Dimensions
(Unit: mm)
Fig. 1
Fig. 6
Fig. 7
Fig. 8
Fig. 9
5.6±0.2
20.0min 5.0±0.5
19.0min 0.8
Cathode
7.9±0.2
(1.0)
5.6±0.2
20.0min 5.0±0.5
19.0min 0.8
Cathode
7.6±0.2
(1.0)
0.5
Resin heap 1.5max
0.5
Resin heap 1.5max
Resin heap 1.5max
Resin burr 0.3max
Cathode
Anode
Fig. 2
5.6±0.2
1.0min
23.0min
Cathode
7.6
±0.2
(1.0)
7.7±0.5
1.0min
23.5min
0.5±0.1
Resin heap 1.5max
Fig. 3
1.0min
25.5min
6.5±0.5
5.0±0.2
1.5
5.6±0.2
1.0min
23.0min
Cathode
6.9
±0.2
(1.0)
Cathode
0.8
2.2
0.5±0.1
Resin heap 1.5max
0.4±0.1
Resin heap 1.5max
Fig. 4
5.0±0.2
Anode
Resin burr 0.3max
Resin heap 0.8max
1.0min
24.5min
0.5±0.1
(1.5)
2.2
1.0min
Cathode
21.0min
9.4±0.3
0.4±0.1
Resin heap 0.8max
Cathode
Fig. 5
Fig. 10
5.6±0.2
20.0min 5.5±0.5
8.2±0.2
(1.0)
3.5
1.0min
Cathode
23.0min
5.5±0.5
3.5±0.1
(1.7)
19.0min 0.8
Cathode
0.4±0.1
Resin heap
0.8max
Resin heap 1.5max
0.5
125
General-purpose LEDs - External Dimensions
(Unit: mm)
Fig. 11
Fig. 16
Fig. 17
Fig. 18
Fig. 19
Fig. 20
8.0±0.2
2.5±0.2
3.5
1.0min
23.0min
(1.6)
4.5±0.5
1.0min
Cathode
23.0min
2.5±0.1
±0.1
(1.5)
4.0
Cathode
0.4±0.1
Resin heap
0.8max
Resin heap 1.5max
C1.0
Fig. 12
5.6±0.2
20.0min 5.0±0.5 5.8±0.2
19.0min 0.8 (1.0)
1.0min
23.0min
5.5
3.5
(1.7)
3.5±0.1
Cathode
Resin burr
0.3max
Cathode
0.4±0.1
Resin heap
0.8max
0.5
Resin heap 1.5max
Cathode mark
Fig. 13
1.0min
23.0min
4.5
3.5
1.0min 25.8min
3.5±0.1
Cathode
(1.7) 2.5±0.1
(1.3)
1.7
0.4
Resin heap 1.5max
Resin burr 0.3max
Resin heap 0.8max
Cathode
Fig. 14
1.55 1.0min
25.4min
4.0±0.1
(1.3)
1.0min 25.8min
2.6±0.1
Cathode
1.7
(1.3)
0.4±0.1
Resin burr 0.3max
Resin heap 1.5max
0.4
Cathode
Resin heap 1.5max
0.4±0.1
Fig. 15
1.0min 25.8min
4.2±0.1
20.0min
3.8±0.2
6.0±0.5
(2.0)
6.0±0.2
Cathode
1.0min
0.8
(1.3)
1.7
0.4±0.1
Resin heap 1.5max
Cathode
Resin burr 0.3max
Resin heap 1.5max
126
General-purpose LEDs - External Dimensions
(Unit: mm)
Fig. 21
Fig. 22
Fig. 23
Fig. 24
Fig. 25
Fig. 26
Fig. 27
Fig. 28
Fig. 29
Fig. 30
20.0min 5.0±0.5
19.0min 0.8
9.0±0.2
(1.0)
4.0±0.2
1.0min
23.0min
Cathode
5.0±0.2
2.0±0.1
2.5±0.15
3.0±0.15
Cathode
Resin heap 0.8max
Resin heap 0.8max
Resin burr 0.3max
2.8±0.2
Resin heap 1.5max
Resin burr 0.3max
Cathode
Cathode
23.0min
(2.0)
6.0±0.5
4.6±0.2
4.9
1.0min
20.0min
6.0±0.2
2.1
1.0min
1.0min
19.0min
4.5±0.5
0.8
8.5
±0.2
Resin heap 0.8max
Resin burr 0.3max
4.5
4.0
Cathode
23.5min
Cathode
1.0min
5.0±0.2
Resin burr 0.3min
Resin heap 1.5max
2.0±0.1
0.4±0.1
Resin heap 0.8max
Resin burr 0.3max
1.0min
20.5min
Cathode
8.0±0.2
(1.0)
3.0
2.4
Cathode
23.0min
2.3
5.0±0.2
Resin heap 0.8max
1.0min
Resin heap 0.8max
Resin burr 0.3max
1.0min
23.0min
4.2±0.5
Cathode
21.0min
Cathode mark
Resin burr 0.3max
Resin heap 0.8max
2.3
Cathode
1.0min
7.0±0.2
3.6
0.5±0.1
127
General-purpose LEDs - External Dimensions
(Unit: mm)
1.5min
1.0min
Fig. 31
Fig. 36
Fig. 37
Fig. 38
Fig. 39
Fig. 40
7.0±0.5
17.0min
0.8
2.5±0.2
1.0min
23.0min
5.8±0.5
3.9
0.5±0.1
±0.2
1.2 (2.0)
5.0
Cathode mark
Resin burr 0.3max
Resin heap 1.5max
2.8
Cathode
Resin burr 0.3max
Resin heap 0.8max
3.6
Fig. 32
Fig. 33
Fig. 34
Fig. 35
1.5min
1.0min
20.0min
3.9
1.0min
23.0min
5.8±0.5
3.9
Cathode mark
Resin burr 0.3max
Resin heap 0.8max
Cathode
Resin burr 0.3max
Resin heap 1.5max
3.6
3.6
7.3±0.5
(0.3)
1.0min
23.0min
Cathode
5.8±0.5
3.9
1.5min
1.0min
20.0min
Resin burr 0.3max
Resin heap 1.5max
Resin burr 0.3max
Resin heap 0.8max
3.6
4.65±0.2
7.3±0.5
(0.3)
1.5min
1.0min
17.0min
2.0±0.5
10.6±0.5
1.5min
1.0min
20.0min
0.5±0.1
7.6±0.2
1.0
Resin burr 0.3max
Resin heap 1.5max
Reisin burr 0.3max
Reisin heap 0.8max
4.65±0.2
1.2
0.8
11.6±0.5
9.6±0.2
1.4
0.9
1.5min
(2.0)
1.0min
17.0min
0.8 1.2
Cathode
mark
(0.5)
1.5
1.3
0.5±0.1
Cathode
Resin burr 0.3max
Resin heap1.5max
P.C.B.
Anode
Resin
128
General-purpose LEDs - External Dimensions
(Unit: mm)
Fig. 41
Fig. 42
Fig. 43
Fig. 44
Fig. 45
Cathode
mark
1.5
1.3
1.4
0.9
Cathode
(0.5)
1.0min
Anode
21.0min
9.4±0.3
0.5±0.1
Resin burr 0.3max
Resin heap 0.8max
P.C.B.
Anode
Cathode
Resin
Lens
1.4±0.1
0.9
Fig. 46
2.0min
24.0min
8.5±0.5
(0.8)
Cathode
mark
0.6±0.1 0.9
(0.5)
2.5
1.5
A
Anode
5.6
Cathode
0.6±0.1
Resin burr 0.3max
Resin heap 1.5max
Cathode
Anode
P.C.B.
Resin
1
4
2
3
B
A
1.4±0.1
0.9
Fig. 47
Cathode
mark
0.6±0.1 0.9
1.0min 25.8min
3.5±0.1
(0.5)
2.5
1.5
Cathode
Cathode
(1.3)
1.7
0.4
Resin burr 0.3max
Resin heap 1.5max
Anode
P.C.B.
Lens
0.8
1.8
Resin
1
4
2
3
B
A
5.6±0.2
1.0min
23.0min
Cathode
A
(1.0)
0.5±0.1
Resin burr 0.3max
Resin heap 1.5max
Dimension A (mm)
SID303C
3.0±0.5
3.6±0.5
4.2±0.5
SID313BP
SID1003BQ
SID307BR
SID1G307C
129
Index by Part No.
Part No.
Classification
Page
Part No.
Classification
Page
Part No.
ES01F
Classification
Page
Power transistor
Hall-Effect IC (Subassembly)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
MOS FET
2SA1488
2SA1488A
2SA1567
2SA1568
2SC3851
2SC3852
2SC4024
2SC4065
2SC4153
2SD2141
2SD2382
2SD2633
2SK2701
A3121L*
A3122L*
A3123L*
A3134L*
A3141L*
A3142L*
A3143L*
A3144L*
A3185L*
A3187L*
A3188L*
A3189L*
A3240L*
A3250L*
A3280L*
A3281L*
A3283L*
A3515LUA
A3516LUA
AG01
66
66
ATS611LSB
ATS612LSB
AU01
60
60
111
111
111
111
111
111
111
111
111
111
111
111
111
111
111
93
Power transistor
Hall-Effect IC (Subassembly)
ES01Z
Power transistor
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Schottky barrier Diode (Axial)
67
111
111
111
111
112
112
112
112
112
112
112
112
112
111
111
111
113
113
113
113
113
113
113
113
112
112
112
110
110
110
110
110
110
110
110
110
110
110
110
112
112
111
111
111
111
111
111
EU 1
Power transistor
68
AU01Z
AU02
EU 1A
Power transistor
69
EU 1Z
Power transistor
70
AU02Z
EG 1
EU 2
Power transistor
71
EU 2A
Power transistor
72
EG 1A
EG 1Y
EG 1Z
EG01
EU 2YX
Power transistor
73
EU 2Z
Power transistor
74
EU01
Power transistor
75
EU01A
Power transistor
76
EG01A
EG01C
EG01Y
EG01Z
EH 1
EU01Z
MOS FET
92
EU02
Hall-Effect IC (Unipolar Switch)
Hall-Effect IC (Unipolar Switch)
Hall-Effect IC (Unipolar Switch)
Hall-Effect IC (Bipolar Switch)
Hall-Effect IC (Unipolar Switch)
Hall-Effect IC (Unipolar Switch)
Hall-Effect IC (Unipolar Switch)
Hall-Effect IC (Unipolar Switch)
Hall-Effect IC (Bipolar Latch)
Hall-Effect IC (Bipolar Latch)
Hall-Effect IC (Bipolar Latch)
Hall-Effect IC (Bipolar Latch)
Hall-Effect IC (Unipolar Switch)
Hall-Effect IC (Unipolar Switch)
Hall-Effect IC (Bipolar Latch)
Hall-Effect IC (Bipolar Latch)
Hall-Effect IC (Bipolar Latch)
Hall-Effect IC (Linear Sensor)
Hall-Effect IC (Linear Sensor)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Schottky barrier Diode (Axial)
Schottky barrier Diode (Axial)
Schottky barrier Diode (Axial)
Schottky barrier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Rectifier Diode (Axial)
60
EU02A
60
EU02Z
60
FKV460
MOS FET
60
EH 1A
EH 1Z
EK 03
EK 04
EK 06
EK 09
EK 13
EK 14
EK 16
EK 19
EL 1
FKV460S
FKV560
94
MOS FET
60
95
MOS FET
60
FKV560S
FKV660
96
Schottky barrier Diode (Axial)
MOS FET
60
97
Schottky barrier Diode (Axial)
MOS FET
60
FKV660S
FMB-24
FMB-24H
FMB-24L
FMB-24M
FMB-26
FMB-26L
FMB-29
FMB-29L
FMB-34
FMB-34M
FMB-34S
FMB-36
FMB-36M
FMB-39
FMB-39M
FMB-G14
FMB-G14L
FMB-G16L
FMB-G19L
FMB-G24H
FMD-G26S
FME-24H
FME-24L
FMG-12S,R
FMG-13S,R
FMG-14S,R
FMG-22S,R
FMG-23S,R
98
Schottky barrier Diode (Axial)
Schottky barrier Diode (Center-tap)
Schottky barrier Diode (Center-tap)
Schottky barrier Diode (Center-tap)
Schottky barrier Diode (Center-tap)
Schottky barrier Diode (Center-tap)
Schottky barrier Diode (Center-tap)
Schottky barrier Diode (Center-tap)
Schottky barrier Diode (Center-tap)
Schottky barrier Diode (Center-tap)
Schottky barrier Diode (Center-tap)
Schottky barrier Diode (Center-tap)
Schottky barrier Diode (Center-tap)
Schottky barrier Diode (Center-tap)
Schottky barrier Diode (Center-tap)
Schottky barrier Diode (Center-tap)
Schottky barrier Diode (Frame 2-pin)
Schottky barrier Diode (Frame 2-pin)
Schottky barrier Diode (Frame 2-pin)
Schottky barrier Diode (Frame 2-pin)
Schottky barrier Diode (Frame 2-pin)
Ultra-Fast-Recovery Rectifier Diode (Frame 2-pin)
Schottky barrier Diode (Center-tap)
Schottky barrier Diode (Center-tap)
Ultra-Fast-Recovery Rectifier Diode (Center-tap)
Ultra-Fast-Recovery Rectifier Diode (Center-tap)
Ultra-Fast-Recovery Rectifier Diode (Center-tap)
Ultra-Fast-Recovery Rectifier Diode (Center-tap)
Ultra-Fast-Recovery Rectifier Diode (Center-tap)
60
113
113
113
113
113
113
113
113
113
113
113
113
113
113
113
113
113
113
113
113
112
113
113
112
112
112
112
112
Schottky barrier Diode (Axial)
60
Schottky barrier Diode (Axial)
60
Schottky barrier Diode (Axial)
60
Schottky barrier Diode (Axial)
60
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Rectifier Diode (Axial)
60
60
EL 1Z
EL02Z
EM 1
60
60
Rectifier Diode (Axial)
60
EM 1A
EM 1B
EM 1C
EM 1Y
EM 1Z
EM 2
Rectifier Diode (Axial)
60
Rectifier Diode (Axial)
112
112
112
112
113
113
113
113
112
110
110
110
112
111
111
111
60
Rectifier Diode (Axial)
AG01A
Rectifier Diode (Axial)
AG01Y
Rectifier Diode (Axial)
AG01Z
Rectifier Diode (Axial)
AK 03
EM 2A
EM 2B
EM01
Rectifier Diode (Axial)
AK 04
Rectifier Diode (Axial)
AK 06
Rectifier Diode (Axial)
AK 09
EM01A
EM01Z
EN 01Z
EP01C
ES 1
Rectifier Diode (Axial)
AL01Z
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
AM01
Rectifier Diode (Axial)
AM01A
Rectifier Diode (Axial)
AM01Z
Ultra-Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Hall-Effect IC (Subassembly)
AP01C
ES 1A
ES 1F
ES 1Z
ES01
AS01
AS01A
AS01Z
ATS610LSA
ES01A
130
Index by Part No.
Part No.
Classification
Page
Part No.
Classification
Page
Part No.
RL 4Z
Classification
Page
Ultra-Fast-Recovery Rectifier Diode (Center-tap)
Ultra-Fast-Recovery Rectifier Diode (Center-tap)
Ultra-Fast-Recovery Rectifier Diode (Center-tap)
Ultra-Fast-Recovery Rectifier Diode (Center-tap)
Ultra-Fast-Recovery Rectifier Diode (Center-tap)
Ultra-Fast-Recovery Rectifier Diode (Center-tap)
Ultra-Fast-Recovery Rectifier Diode (Frame 2-pin)
Ultra-Fast-Recovery Rectifier Diode (Frame 2-pin)
Ultra-Fast-Recovery Rectifier Diode (Frame 2-pin)
Ultra-Fast-Recovery Rectifier Diode (Frame 2-pin)
Ultra-Fast-Recovery Rectifier Diode (Center-tap)
Ultra-Fast-Recovery Rectifier Diode (Center-tap)
Ultra-Fast-Recovery Rectifier Diode (Center-tap)
Ultra-Fast-Recovery Rectifier Diode (Center-tap)
Ultra-Fast-Recovery Rectifier Diode (Center-tap)
Ultra-Fast-Recovery Rectifier Diode (Center-tap)
Ultra-Fast-Recovery Rectifier Diode (Center-tap)
Ultra-Fast-Recovery Rectifier Diode (Center-tap)
Ultra-Fast-Recovery Rectifier Diode (Center-tap)
Ultra-Fast-Recovery Rectifier Diode (Center-tap)
Ultra-Fast-Recovery Rectifier Diode (Frame 2-pin)
Ultra-Fast-Recovery Rectifier Diode (Frame 2-pin)
Ultra-Fast-Recovery Rectifier Diode (Frame 2-pin)
Ultra-Fast-Recovery Rectifier Diode (Frame 2-pin)
Ultra-Fast-Recovery Rectifier Diode (Frame 2-pin)
Ultra-Fast-Recovery Rectifier Diode (Frame 2-pin)
Rectifier Diode (Center-tap)
Schottky barrier Diode (Center-tap)
Power Zener Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Rectifier Diode (Axial)
FMG-24S,R
FMG-26S,R
FMG-32S,R
FMG-33S,R
FMG-34S,R
FMG-36S,R
FMG-G26S
FMG-G2CS
FMG-G36S
FMG-G3CS
FML-12S
112
112
112
112
112
112
112
112
112
112
112
112
112
112
112
112
112
112
112
112
112
112
112
112
112
112
110
110
110
110
110
110
110
112
112
112
112
111
111
111
111
111
111
111
111
77
MPE-24H
PZ 628
RBV-406B
RBV-602L
RC 2
113
109
113
112
111
111
111
111
111
112
112
112
112
112
112
112
112
112
112
112
112
112
112
111
111
111
111
111
113
113
113
113
113
113
113
113
113
113
113
113
113
112
112
112
112
112
112
112
112
112
110
110
110
110
110
110
110
110
110
110
110
110
110
110
110
110
110
110
110
110
110
110
110
110
110
110
110
110
112
112
112
112
110
110
110
110
110
112
111
111
111
111
111
111
112
111
111
111
RM 1
Schottky barrier Diode (Bridge)
Rectifier Diode (Axial)
RM 10
RM 10A
RM 10B
RM 10Z
RM 11A
RM 11B
RM 11C
RM 1A
RM 1B
RM 1C
RM 1Z
RM 2
Ultra-Fast-Recovery Rectifier Diode (Bridge)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Schottky barrier Diode (Axial)
Rectifier Diode (Axial)
Rectifier Diode (Axial)
Rectifier Diode (Axial)
RF 1
Rectifier Diode (Axial)
RF 1A
RF 1B
RF 1Z
RG 10
RG 10A
RG 10Y
RG 10Z
RG 1C
RG 2
Rectifier Diode (Axial)
Rectifier Diode (Axial)
Rectifier Diode (Axial)
Rectifier Diode (Axial)
Rectifier Diode (Axial)
FML-13S
Rectifier Diode (Axial)
FML-14S
Rectifier Diode (Axial)
FML-22S
Rectifier Diode (Axial)
FML-23S
RM 2A
RM 2B
RM 2C
RM 2Z
RM 3
Rectifier Diode (Axial)
FML-24S
RG 2A
RG 2Y
RG 2Z
RG 4
Rectifier Diode (Axial)
FML-32S
Rectifier Diode (Axial)
FML-33S
Rectifier Diode (Axial)
FML-34S
Rectifier Diode (Axial)
FML-36S
RG 4A
RG 4C
RG 4Y
RG 4Z
RH 1
RM 3A
RM 3B
RM 3C
RM 4
Rectifier Diode (Axial)
FML-G12S
FML-G13S
FML-G14S
FML-G16S
FML-G22S
FML-G26S
FMM-22S,R
FMM-24S,R
FMM-26S,R
FMM-31S,R
FMM-32S,R
FMM-34S,R
FMM-36S,R
FMN-G12S
FMN-G14S
FMN-G16S
FMP-G12S
FMU-12S,R
FMU-14S,R
FMU-21S,R
FMU-22S,R
FMU-24S,R
FMU-32S,R
FMU-34S,R
FMU-G2YXS
FN812
Rectifier Diode (Axial)
Rectifier Diode (Axial)
Rectifier Diode (Axial)
RM 4A
RM 4AM
RM 4B
RM 4C
RM 4Y
RM 4Z
RN 1Z
RN 2Z
RN 3Z
RN 4Z
RO 2
Rectifier Diode (Axial)
RH 1A
RH 1B
RH 1C
RH 1Z
RJ 43
Rectifier Diode (Axial)
Rectifier Diode (Axial)
Rectifier Diode (Center-tap)
Rectifier Diode (Axial)
Rectifier Diode (Center-tap)
Rectifier Diode (Axial)
Rectifier Diode (Center-tap)
Schottky barrier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Rectifier Diode (Axial)
RK 13
RK 14
RK 16
RK 19
RK 33
RK 34
RK 36
RK 39
RK 43
RK 44
RK 46
RK 49
RL 10Z
RL 2
Rectifier Diode (Center-tap)
Schottky barrier Diode (Axial)
Rectifier Diode (Center-tap)
Schottky barrier Diode (Axial)
Rectifier Diode (Center-tap)
Schottky barrier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Frame 2-pin)
Ultra-Fast-Recovery Rectifier Diode (Frame 2-pin)
Ultra-Fast-Recovery Rectifier Diode (Frame 2-pin)
Ultra-Fast-Recovery Rectifier Diode (Frame 2-pin)
Fast-Recovery Rectifier Diode (Center-tap)
Fast-Recovery Rectifier Diode (Center-tap)
Fast-Recovery Rectifier Diode (Center-tap)
Fast-Recovery Rectifier Diode (Center-tap)
Fast-Recovery Rectifier Diode (Center-tap)
Fast-Recovery Rectifier Diode (Center-tap)
Fast-Recovery Rectifier Diode (Center-tap)
Fast-Recovery Rectifier Diode (Frame 2-pin)
Power transistor
Schottky barrier Diode (Axial)
Schottky barrier Diode (Axial)
Rectifier Diode (Axial)
RO 2A
RO 2B
RO 2C
RO 2Z
RP 1H
RS 1A
RS 1B
RU 1
Schottky barrier Diode (Axial)
Rectifier Diode (Axial)
Schottky barrier Diode (Axial)
Rectifier Diode (Axial)
Schottky barrier Diode (Axial)
Rectifier Diode (Axial)
Schottky barrier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Schottky barrier Diode (Axial)
Schottky barrier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
Ultra-Fast-Recovery Rectifier Diode (Axial)
RU 1A
RU 1B
RU 1C
RU 1P
RU 2
RL 2A
RL 2Z
RL 3
Power transistor
FP812
78
RL 3A
RL 3Z
RL 4A
Power transistor
MN611S
79
RU 20A
RU 2AM
Power transistor
MN638S
80
131
Index by Part No.
Part No.
RU 2B
Classification
Page
Part No.
Classification
Page
Part No.
Classification
Page
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Fast-Recovery Rectifier Diode (Axial)
Power transistor Array (Surface Mount)
Power transistor Array (Surface Mount)
Power transistor Array (Surface Mount)
High-side Power Switch IC (Surface Mount 2-circuits)
MOS FET Array (Surface mount)
MOS FET Array (Surface mount)
MOS FET Array (Surface mount)
Flat Lens Deep Red Chip LED
Flat Lens Orange Chip LED
5ø Round Pure Green LED Lamp
For Surface Illumination Pure Green LED Lamp
5ø Round Pure Green LED Lamp
5ø Round GaAlAs Red LED Lamp
5ø Round GaAlAs Red LED Lamp
5ø Round GaAlAs Red LED Lamp
5ø Round Yellow LED Lamp
111
111
111
111
111
111
111
111
111
111
111
111
111
111
111
111
111
111
111
111
111
111
111
111
111
111
111
88
SEC1901C
SEC1903C
SEC1E01C
SEC2422C
SEC2442C
SEC2462C
SEC2484C
SEC2492C
SEC2494C
SEC2552C
SEC2554C
SEC2592C
SEC2762C-YG
SEC2764C
SEC2774C
SECS1203C
SECU1D01C
SECU1E01C
SEL1110R
SEL1110S
SEL1110W
SEL1111R
SEL1120R
SEL1121R
SEL1124R
SEL1210R
SEL1210RM
SEL1210S
SEL1210SM
SEL1211R
SEL1213C
SEL1220R
SEL1222R
SEL1250RM
SEL1250SM
SEL1410E
SEL1410EM
SEL1410G
SEL1410GM
SEL1411G
SEL1413E
SEL1420G
SEL1421G
SEL1422G
SEL1424G
SEL1450EKM
SEL1450GM-YG
SEL1453CEMKT
SEL1510C
123
123
123
123
123
123
123
123
123
123
123
123
123
123
123
123
123
123
119
119
119
119
121
120
121
119
119
119
119
119
120
121
121
119
119
119
119
119
119
119
120
121
120
121
121
119
119
119
119
SEL1510CM
SEL1513E
SEL1550CM
SEL1610C
SEL1610W
SEL1615C
SEL1710K
SEL1710KM
SEL1710Y
SEL1711Y
SEL1713K
SEL1720Y
SEL1721Y
SEL1722K
SEL1722Y
SEL1724Y
SEL1810A
SEL1810AM
SEL1810D
SEL1810DM
SEL1811D
SEL1813A
SEL1820D
SEL1821D
SEL1822D
SEL1824D
SEL1850AM
SEL1850DM
SEL1910A
SEL1910AM
SEL1910D
SEL1910DM
SEL1911D
SEL1913K
SEL1920D
SEL1921D
SEL1922D
SEL1924D
SEL1950KM
SEL2110R
SEL2110S
SEL2110W
SEL2111R
SEL2210R
SEL2210S
SEL2210W
SEL2213C
SEL2215R
SEL2215S
119
120
119
119
119
119
119
119
119
119
120
121
120
121
121
121
119
119
119
119
119
120
121
120
121
121
119
119
119
119
119
119
119
120
121
120
121
121
119
120
120
120
120
120
120
120
120
120
120
Inner Lens Orange Chip LED
RU 2C
Flat Lens GaN Blue Chip LED
RU 2M
Flat Lens Green / Red Bicolor Chip LED
Inner Lens Green / Red Bicolor Chip LED
Flat Lens Green / GaAlAs Red Bicolor Chip LED
Inner Lens Green / Amber Bicolor Chip LED
Flat Lens Green / Orange Bicolor Chip LED
Inner Lens Green / Orange Bicolor Chip LED
Flat Lens Green / Green Chip LED
Inner Lens Green / Green Chip LED
Flat Lens Pure Green / Orange Bicolor Chip LED
Flat Lens Yellow / GaAlAs Red Bicolor Chip LED
Inner Lens Yellow / GaAlAs Red Bicolor Chip LED
Inner Lens Yellow / Yellow Chip LED
Flat Lens AlGaInP Red Chip LED
Flat Lens InGaN Pure Green Chip LED
Flat Lens InGaN Blue Chip LED
5ø Round Deep Red LED Lamp
5ø Round Deep Red LED Lamp
5ø Round Deep Red LED Lamp
5ø Round Cylindrical Deep Red LED Lamp
2✕5 Rectangular Deep Red LED Lamp
3✕5 Rectangular Deep Red LED Lamp
1✕5 Rectangular Deep Red LED Lamp
5ø Round Red LED Lamp
RU 2YX
RU 2Z
RU 3
RU 30
5ø Round Yellow LED Lamp
RU 30A
RU 30Y
RU 30Z
RU 31
5ø Round Yellow LED Lamp
5ø Round Cylindrical Yellow LED Lamp
For Surface Illumination Yellow LED Lamp
2✕5 Rectangular Yellow LED Lamp
3✕5 Rectangular Yellow LED Lamp
2.5✕5 Rectangular Yellow LED Lamp
2.5✕5 Rectangular Yellow LED Lamp
1✕5 Rectangular Yellow LED Lamp
5ø Round Amber LED Lamp
RU 31A
RU 3A
RU 3AM
RU 3B
RU 3C
RU 3M
5ø Round Amber LED Lamp
RU 3YX
RU 4
5ø Round Amber LED Lamp
5ø Round Amber LED Lamp
RU 4A
5ø Round Cylindrical Amber LED Lamp
For Surface Illumination Amber LED Lamp
2✕5 Rectangular Amber LED Lamp
3✕5 Rectangular Amber LED Lamp
2.5✕5 Rectangular Amber LED Lamp
1✕5 Rectangular Amber LED Lamp
5ø Round Amber LED Lamp
RU 4AM
RU 4B
RU 4C
RU 4M
RU 4Y
RU 4YX
RU 4Z
5ø Round Red LED Lamp
5ø Round Red LED Lamp
5ø Round Amber LED Lamp
SDA03
5ø Round Red LED Lamp
5ø Round Orange LED Lamp
SDA04
89
5ø Round Cylindrical Red LED Lamp
For Surface Illumination Red LED Lamp
2✕5 Rectangular Red LED Lamp
2.5✕5 Rectangular Red LED Lamp
5ø Round Red LED Lamp
5ø Round Orange LED Lamp
SDC09
90
5ø Round Orange LED Lamp
SDH04
26
5ø Round Orange LED Lamp
SDK06
103
104
105
123
123
123
123
123
123
123
123
123
123
123
123
123
123
123
5ø Round Cylindrical Orange LED Lamp
For Surface Illumination Orange LED Lamp
2✕5 Rectangular Orange LED Lamp
3✕5 Rectangular Orange LED Lamp
2.5✕5 Rectangular Orange LED Lamp
1✕5 Rectangular Orange LED Lamp
5ø Round Orange LED Lamp
SDK08
SDK09
5ø Round Red LED Lamp
SEC1101C
SEC1201C
SEC1203C
SEC1401C
SEC1401E-TG
SEC1403C
SEC1403E-TG
SEC1501C
SEC1503C
SEC1601C
SEC1603C
SEC1701C-YG
SEC1703C
SEC1801C
SEC1803C
Flat Lens Red Chip LED
5ø Round Green LED Lamp
Inner Lens Red Chip LED
5ø Round Green LED Lamp
Flat Lens Green Chip LED
5ø Round Green LED Lamp
Flat Lens Deep Green Chip LED
Inner Lens Green Chip LED
5ø Round Green LED Lamp
5ø Round Cylindrical Green LED Lamp
For Surface Illumination Green LED Lamp
2✕5 Rectangular Green LED Lamp
3✕5 Rectangular Green LED Lamp
2.5✕5 Rectangular Green LED Lamp
1✕5 Rectangular Green LED Lamp
5ø Round Green LED Lamp
3ø Round Deep Red LED Lamp
3ø Round Deep Red LED Lamp
3ø Round Deep Red LED Lamp
3ø Round Cylindrical Deep Red LED Lamp
3ø Round Red LED Lamp
Inner Lens Deep Green Chip LED
Flat Lens Pure Green Chip LED
Inner Lens Pure Green Chip LED
Flat Lens GaAlAs Red Chip LED
Inner Lens GaAlAs Red Chip LED
Flat Lens Yellow Chip LED
3ø Round Red LED Lamp
3ø Round Red LED Lamp
Inner Lens Yellow Chip LED
5ø Round Green LED Lamp
For Surface Illumination Red LED Lamp
3ø Round Red LED Lamp
Flat Lens Amber Chip LED
4.6✕5.6ø Egg-shaped Green LED Lamp
5ø Round Pure Green LED Lamp
Inner Lens Amber Chip LED
3ø Round Red LED Lamp
132
Index by Part No.
Part No.
Classification
Page
Part No.
Classification
Page
Part No.
Classification
Page
3ø Round Green LED Lamp
4ø Round Green LED Lamp
5mm Pitch Lead 3ø Lens-type Red LED Lamp
5mm Pitch Lead Bow-shaped Red LED Lamp
5mm Pitch Lead Egg-shaped Red LED Lamp
5mm Pitch Lead Rectangular Orange LED Lamp
5mm Pitch Lead 3ø Lens-type Green LED Lamp
5mm Pitch Lead Bow-shaped Green LED Lamp
5mm Pitch Lead Rectangular Pure Green LED Lamp
5mm Pitch Lead 3ø Lens-type Pure Green LED Lamp
5mm Pitch Lead Bow-shaped Pure Green LED Lamp
5mm Pitch Lead Rectangular GaAlAs Red LED Lamp
5mm Pitch Lead 3ø Lens-type Yellow LED Lamp
5mm Pitch Lead Bow-shaped Yellow LED Lamp
5mm Pitch Lead Egg-shaped Yellow LED Lamp
5mm Pitch Lead Rectangular Amber LED Lamp
5mm Pitch Lead 3ø Lens-type Amber LED Lamp
5mm Pitch Lead Bow-shaped Amber LED Lamp
5mm Pitch Lead Rectangular Orange LED Lamp
5mm Pitch Lead 3ø Lens-type Orange LED Lamp
5mm Pitch Lead Bow-shaped Orange LED Lamp
5mm Pitch Lead Egg-shaped Orange LED Lamp
5mm Pitch Lead Bow-shaped GaN Blue LED Lamp
3ø Round Deep Red LED Lamp
3ø Round Deep Red LED Lamp
3ø Round Red LED Lamp
SEL2410E
SEL2410G
SEL2411G
SEL2413E
SEL2413G
SEL2415E
SEL2415G
SEL2510C
SEL2510G
SEL2513E
SEL2515C
SEL2610C
SEL2613CS-S
SEL2710K
SEL2710Y
SEL2713K
SEL2715K
SEL2715Y
SEL2810A
SEL2810D
SEL2813A
SEL2815A
SEL2815D
SEL2910A
SEL2910D
SEL2911D
SEL2913K
SEL2915A
SEL2915D
SEL2E10C
SEL4110R
SEL4110S
SEL4114R
SEL4114S
SEL4117R
SEL4210R
SEL4210S
SEL4214R
SEL4214S
SEL4225C
SEL4225R
SEL4226C
SEL4226R
SEL4227C
SEL4228C
SEL4229R
SEL4410E
SEL4410G
SEL4414E
120
120
120
120
120
120
120
120
120
120
120
120
120
120
120
120
120
120
120
120
120
120
120
120
120
120
120
120
120
120
119
119
119
119
120
119
119
119
119
121
121
121
121
121
121
121
119
119
119
SEL4414G
SEL4417G
SEL4425E
SEL4425G
SEL4426E
SEL4426G
SEL4427EP
SEL4428B-TG
SEL4428E
SEL4429E
SEL4510C
SEL4514C
SEL4525C
SEL4528C
SEL4628C-S
SEL4710K
SEL4710Y
SEL4714K
SEL4714Y
SEL4717Y
SEL4725K
SEL4725Y
SEL4726K
SEL4726Y
SEL4728K
SEL4729KH
SEL4810A
SEL4810D
SEL4814A
SEL4814D
SEL4817D
SEL4825A
SEL4825D
SEL4826A
SEL4826D
SEL4828A
SEL4829A
SEL4910A
SEL4910D
SEL4914A
SEL4914D
SEL4917D
SEL4925A
SEL4925D
SEL4926A
SEL4926D
SEL4928A
SEL4929A
SEL5220S
119
120
121
121
121
121
121
121
121
121
119
119
121
121
121
119
119
119
119
120
121
121
121
121
121
121
119
119
119
119
120
121
121
121
121
121
121
119
119
119
119
120
121
121
121
121
121
121
121
SEL5221S
SEL5223S
SEL5255S
SEL5420E
SEL5421E
SEL5423E
SEL5520C
SEL5521C
SEL5523C
SEL5620C
SEL5721C
SEL5723C
SEL5755C
SEL5820A
SEL5821A
SEL5823A
SEL5920A
SEL5921A
SEL5923A
SEL5955A
SEL5E23C
SEL6110R
SEL6110S
SEL6210R
SEL6210S
SEL6214S
SEL6215S
SEL6227S
SEL6410E
SEL6410G
SEL6413E
SEL6414E
SEL6414E-TG
SEL6415E
SEL6427EP
SEL6510C
SEL6510G
SEL6513C
SEL6514C
SEL6515C
SEL6710K
SEL6710Y
SEL6714K
SEL6714W
SEL6715C
SEL6810A
SEL6810D
SEL6814A
SEL6910A
121
121
121
121
121
121
121
121
121
121
121
121
121
121
121
121
121
121
121
121
121
120
120
120
120
120
120
121
120
120
120
120
120
120
121
120
120
120
120
120
120
120
120
120
120
120
120
120
120
3ø Round Green LED Lamp
2ø Round Green LED Lamp
3ø Round Cylindrical Green LED Lamp
For Surface Illumination Green LED Lamp
For Surface Illumination Green LED Lamp
3ø Round Green LED Lamp
2✕4 Rectangular Green LED Lamp
2✕4 Rectangular Green LED Lamp
2✕4 Rectangular Green LED Lamp
2✕4 Rectangular Green LED Lamp
4ø Bow-shaped Green LED Lamp
3.1ø Bow-shaped Deep Green LED Lamp
3.1ø Bow-shaped Green LED Lamp
3.1ø Bow-shaped Green LED Lamp
4ø Round Pure Green LED Lamp
4ø Round Pure Green LED Lamp
2✕4 Rectangular Pure Green LED Lamp
3.1ø Bow-shaped Pure Green LED Lamp
3.1ø Bow-shaped GaAlAs Red LED Lamp
4ø Round Yellow LED Lamp
3ø Round Green LED Lamp
3ø Round Pure Green LED Lamp
3ø Round Pure Green LED Lamp
For Surface Illumination Pure Green LED Lamp
3ø Round Pure Green LED Lamp
3ø Round GaAlAs Red LED Lamp
For Surface Illumination GaAlAs Red LED Lamp
3ø Round Yellow LED Lamp
3ø Round Yellow LED Lamp
For Surface Illumination Yellow LED Lamp
3ø Round Yellow LED Lamp
4ø Round Yellow LED Lamp
3ø Round Yellow LED Lamp
4ø Round Yellow LED Lamp
3ø Round Amber LED Lamp
4ø Round Yellow LED Lamp
3ø Round Amber LED Lamp
2ø Round Yellow LED Lamp
For Surface Illumination Amber LED Lamp
3ø Round Amber LED Lamp
2✕4 Rectangular Yellow LED Lamp
2✕4 Rectangular Yellow LED Lamp
2✕4 Rectangular Yellow LED Lamp
2✕4 Rectangular Yellow LED Lamp
3.1ø Bow-shaped Yellow LED Lamp
3.1ø Bow-shaped Yellow LED Lamp
4ø Round amber LED Lamp
3ø Round Amber LED Lamp
3ø Round Orange LED Lamp
3ø Round Orange LED Lamp
3ø Round Cylindrical Orange LED Lamp
For Surface Illumination Orange LED Lamp
3ø Round Orange LED Lamp
3ø Round Orange LED Lamp
3ø Round GaN Blue LED Lamp
4ø Round Deep Red LED Lamp
4ø Round Deep Red LED Lamp
4ø Round Deep Red LED Lamp
4ø Round Deep Red LED Lamp
2ø Round Deep Red LED Lamp
4ø Round Red LED Lamp
3ø Round Red LED Lamp
3ø Round Red LED Lamp
3ø Round Red LED Lamp
4ø Round amber LED Lamp
4ø Bow-shaped Red LED Lamp
3ø Round Green LED Lamp
4ø Round amber LED Lamp
4ø Round amber LED Lamp
3ø Round Green LED Lamp
2ø Round Amber LED Lamp
For Surface Illumination Green LED Lamp
3ø Round Green LED Lamp
2✕4 Rectangular Amber LED Lamp
2✕4 Rectangular Amber LED Lamp
2✕4 Rectangular Amber LED Lamp
2✕4 Rectangular Amber LED Lamp
3.1ø Bow-shaped Amber LED Lamp
3.1ø Bow-shaped Amber LED Lamp
4ø Round Orange LED Lamp
3ø Round Green LED Lamp
3ø Round Green LED Lamp
4ø Bow-shaped Green LED Lamp
3ø Round Pure Green LED Lamp
4ø Round Pure Green LED Lamp
For Surface Illumination GaAlAs Red LED Lamp
3ø Round Pure Green LED Lamp
3ø Round Pure Green LED Lamp
3ø Round Yellow LED Lamp
4ø Round Red LED Lamp
4ø Round Red LED Lamp
4ø Round Red LED Lamp
4ø Round Orange LED Lamp
2✕4 Rectangular Red LED Lamp
2✕4 Rectangular Red LED Lamp
2✕4 Rectangular Red LED Lamp
2✕4 Rectangular Red LED Lamp
4ø Bow-shaped Red LED Lamp
3.1ø Bow-shaped Red LED Lamp
3.1ø Bow-shaped Red LED Lamp
4ø Round Green LED Lamp
4ø Round Orange LED Lamp
4ø Round Orange LED Lamp
2ø Round Orange LED Lamp
3ø Round Yellow LED Lamp
2✕4 Rectangular Orange LED Lamp
2✕4 Rectangular Orange LED Lamp
2✕4 Rectangular Orange LED Lamp
2✕4 Rectangular Orange LED Lamp
3.1ø Bow-shaped Orange LED Lamp
3.1ø Bow-shaped Orange LED Lamp
5mm Pitch Lead Rectangular Red LED Lamp
3ø Round Yellow LED Lamp
3ø Round Yellow LED Lamp
3ø Round Yellow LED Lamp
3ø Round Amber LED Lamp
3ø Round Amber LED Lamp
4ø Round Green LED Lamp
3ø Round Amber LED Lamp
4ø Round Green LED Lamp
3ø Round Orange LED Lamp
133
Index by Part No.
Part No.
Classification
Page
Part No.
Classification
Page
Part No.
Classification
Page
3ø Round Orange LED Lamp
Rectifier Diode for Alternator
5ø Round Amber / Green Bicolor LED Lamp
5ø Round Orange / Green Bicolor LED Lamp
2.5✕5 Rectangular Orange / Green Bicolor LED Lamp
3.3✕6 Rectangular Red / Green Bicolor LED Lamp
Bow Lens Red / Green Bicolor LED Lamp
Egg Shape Red / Yellow Bicolor LED Lamp
Bow Lens Red / Orange Bicolor LED Lamp
Egg Shape Red / Yellow Bicolor LED Lamp
3.3✕6 Rectangular Amber / Green Bicolor LED Lamp
Bow Lens Amber/Green Bicolor LED Lamp
Egg Shape Orange / Red Bicolor LED Lamp
3.3✕6 Rectangular Orange / Green Bicolor LED Lamp
Bow Lens Orange/Green Bicolor LED Lamp
Egg Shape Orange / Green Bicolor LED Lamp
SEL6910D
SEL6914A
SEL6914W
SEL6915A
SEL6927A
SELS1803C
SELS1903C
SELS5223C
SELS5823C
SELS5923C
SELS5B23C
SELS6B14C
SELU1210CXM
SELU1250CM
SELU1253CMKT
SELU1810CXM
SELU1853CMKT
SELU1D10CXM
SELU1D50CM
SELU1E10CXM
SELU1E50CM
SELU2710C
SELU2D10C
SELU2E10C
SELU5723C
SELU5823C
SELU5E20C
SELU5E23C
SFPB-54
120
120
120
120
121
123
123
121
121
121
121
120
119
119
119
119
SG-9CNS
SG-9LCNR
SG-9LCNS
SG-9LLCNR
SG-9LLCNS
SHV-05JS
SHV-08J
107
107
107
107
107
108
108
108
6
SML1816W
SML19416W
SML19460C
SML72420C
SML72423C
SML72755C
SML72923C
SML76755WN
SML78420C
SML78423C
SML79255C
SML79420C
SML79423C
SML79455C
SMLS79723C
SMLU72755C
SMLU78755C
SPB-64S
122
122
122
122
122
122
122
122
122
122
122
122
122
122
122
122
122
113
113
113
113
91
3ø Round Orange LED Lamp
Rectifier Diode for Alternator
3ø Round Orange LED Lamp
Rectifier Diode for Alternator
3ø Round Orange LED Lamp
Rectifier Diode for Alternator
4ø Bow-shaped Orange LED Lamp
Inner Lens AlGaInP Amber Chip LED
Inner Lens AlGaInP Orange Chip LED
Rectifier Diode for Alternator
High-Voltage Rectifier Diode for Ignition Coil
High-Voltage Rectifier Diode for Ignition Coil
High-Voltage Rectifier Diode for Ignition Coil
Dropper Type Regulator IC with ON / OFF Control
Dropper Type Regulator IC (3-terminal)
Dropper Type Regulator IC (2-output)
Dropper Type Regulator IC (2-output)
Switching Type Regulator IC
5mm Pitch Lead Bow-shaped AlGaInP
Red LED Lamp
SHV-30J
5mm Pitch Lead Bow-shaped AlGaInP
Amber LED Lamp
SI-3001S
5mm Pitch Lead Bow-shaped AlGaInP
Orange LED Lamp
SI-3003S
8
5mm Pitch Lead Bow-shaped AlGaInP
Light Amber LED Lamp
SI-3101S
10
3ø Round AlGaInP Light Amber LED Lamp
5ø Round AlGaInP Red LED Lamp
5ø Round AlGaInP Red LED Lamp
4.6✕5.6ø Egg-shaped AlGaInP Red LED Lamp
5ø Round AlGaInP Amber LED Lamp
SI-3102S
12
SI-3201S
14
High-side Power Switch IC with Diagnostic Function
High-side Power Switch IC with Diagnostic Function
SI-5151S
16
Bow Lens AlGaInP Orange / Yellow
Bicolor LED Lamp
SI-5152S
18
High-side Power Switch IC with Diagnostic
Function and built-in Zener Diode
Egg Shape AlGaInP Red / AlGaInP
Yellow Bicolor LED Lamp
SI-5153S
22
High-side Power Switch IC with Diagnostic
Function and built-in Zener Diode
Egg Shape AlGaInP Amber / AlGaInP
Yellow Bicolor LED Lamp
4.6✕5.6ø Egg-shaped AlGaInP Amber LED Lamp
5ø Round InGaN Pure Green LED Lamp
5ø Round InGaN Pure Green LED Lamp
5ø Round InGaN Blue LED Lamp
119
119
119
119
119
120
120
120
121
121
121
121
113
113
113
113
113
113
113
113
113
113
113
113
113
112
112
110
110
110
110
109
107
SI-5154S
24
High-side Power Switch IC with Diagnostic Function
Full-bridge PWM Motor Driver IC
5ø Round Infrared LED
Schottky barrier Diode (Surface Mount)
Schottky barrier Diode (Surface Mount)
Schottky barrier Diode (Surface Mount)
Schottky barrier Diode (Surface Mount)
Power transistor Array (Surface Mount)
Low-side Switch IC (Surface Mount 4-circuit)
High-side Power Switch IC (Surface Mount 2-circuits)
High-side Power Switch IC (Surface Mount 2-circuits)
High-side Power Switch IC (Surface Mount 3-circuits)
Low-side Switch IC (Surface Mount 4-circuit)
SI-5155S
20
SI-5300
48
SPB-G34S
SPB-G54S
SPB-G56S
SPF0001
SID1003BQ
SID1010CM
SID1010CXM
SID1050CM
SID1G307C
SID1K10CM
SID1K10CXM
SID2010C
SID2K10C
SID303C
124
124
124
124
124
124
124
124
124
124
124
124
52
5ø Round InGaN Blue LED Lamp
5ø Round Infrared LED
3ø Round AlGaInP Yellow LED Lamp
3ø Round InGaN Pure green LED Lamp
3ø Round InGaN Blue LED Lamp
5ø Round Infrared LED
5ø Round Infrared LED
SPF5002A
SPF5003
40
5ø Round Infrared LED
28
5mm Pitch Lead Bow-shaped AlGaInP
Yellow LED Lamp
5ø Round Infrared LED
SPF5004
30
5mm Pitch Lead Bow-shaped AlGaInP
Amber LED Lamp
5ø Round Infrared LED
SPF5007
34
5mm Pitch Lead Rectangular InGaN
Pure Green LED Lamp
3ø Round Infrared LED
SPF5009
42
5mm Pitch Lead Bow-shaped InGaN
Blue LED Lamp
Low-side Switch IC
3ø Round Infrared LED
SPF5012
44
(Surface Mount 4-circuit with Output Monitor)
Schottky barrier Diode (Surface Mount)
Schottky barrier Diode (Surface Mount)
Schottky barrier Diode (Surface Mount)
Schottky barrier Diode (Surface Mount)
Schottky barrier Diode (Surface Mount)
Schottky barrier Diode (Surface Mount)
Schottky barrier Diode (Surface Mount)
Schottky barrier Diode (Surface Mount)
Schottky barrier Diode (Surface Mount)
Schottky barrier Diode (Surface Mount)
Schottky barrier Diode (Surface Mount)
Schottky barrier Diode (Surface Mount)
Schottky barrier Diode (Surface Mount)
Ultra-Fast-Recovery Rectifier Diode (Surface Mount)
Ultra-Fast-Recovery Rectifier Diode (Surface Mount)
Rectifier Diode (Surface Mount)
5ø Round Infrared LED
Schottky barrier Diode (Surface Mount)
Power Zener Diode (Surface Mount)
Power transistor Array
Power transistor Array
Power transistor Array
Power transistor Array
Power transistor Array
Power transistor Array
MOS FET Array
SPJ-63S
113
109
81
5ø Round Infrared LED
SFPB-56
SID307BR
SID313BP
SLA2402M
SLA2403M
SLA2501M
SLA2502M
SLA4708M
SLA5027
SPZ-G36
5ø Round Infrared LED
SFPB-59
STA315A
High Voltage Driver IC for HID Lamps
High Voltage Driver IC for HID Lamps
High-side Power Switch IC (3-circuits)
High-side Power Switch IC (4-circuits)
Stepper-motor Driver IC
SFPB-64
STA335A
82
SFPB-66
56
STA415A
83
SFPB-69
32
STA461C
84
SFPB-74
36
STA463C
85
SFPB-76
46
STA464C
86
MOS FET Array
SFPE-63
102
87
STA508A
99
Power transistor Array
MOS FET Array
SFPE-64
SLA8004
STA509A
100
106
60
Thyristor for HID Lamp Ignition
with built-in Reverse Diode
MOS FET Array
SFPJ-53
SMA5113
SML11516C
SML1216C
SML1216W
SML12451W
SML12460C
SML1516W
SML16716CN
SML16716WN
SML16751WN
SML16760CN
101
122
122
122
122
122
122
122
122
122
122
TFC561D
5ø Round Deep Red / Pure Green Bicolor LED Lamp
5ø Round Red / Green Bicolor LED Lamp
5ø Round Red / Green Bicolor LED Lamp
5ø Round Red / Green Bicolor LED Lamp
2.5✕5 Rectangular Red / Green Bicolor LED Lamp
5ø Round Deep Red / Pure Green Bicolor LED Lamp
5ø Round GaAlAs Red / Yellow Bicolor LED Lamp
5ø Round GaAlAs Red / Yellow Bicolor LED Lamp
5ø Round GaAlAs Red / Yellow Bicolor LED Lamp
Hall-Effect IC (Gear-Tooth Sensor)
Hall-Effect IC (Gear-Tooth Sensor)
Hall-Effect IC (Bipolar Switch)
Hall-Effect IC (Bipolar Switch)
SFPJ-63
UGS3059KA
UGS3060KA
UGS3132*
UGS3133*
SFPJ-73
60
SFPL-52
60
SFPL-62
60
SFPM-52
Rectifier Diode (Surface Mount)
SFPM-54
Rectifier Diode (Surface Mount)
SFPM-62
Rectifier Diode (Surface Mount)
SFPM-64
Power Zener Diode (Surface Mount)
Rectifier Diode for Alternator
SFPZ-68
2.5✕5 Rectangular GaAlAs Red / Yellow
SG-9CNR
Bicolor LED Lamp
134
Sanken Electric Co., Ltd.
1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo
PHONE: 03-3986-6164
FAX: 03-3986-8637
Overseas Sales Offices
Asia
Sanken Electric Singapore Pte. Ltd.
150 Beach Road, #14-03 The Gateway West,
Singapore 0718
PHONE: 291-4755
FAX: 297-1744
Sanken Electric Hong Kong Co., Ltd.
1018 Ocean Centre, Canton Road,
Kowloon, Hong Kong
PHONE: 2735-5262
FAX: 2735-5494
Sanken Electric Korea Co., Ltd.
SK Life B/D 6F,
168 Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea
PHONE: 82-2-714-3700
FAX: 82-2-3272-2145
North America
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615, U.S.A.
PHONE: (508)853-5000
FAX: (508)853-7861
Europe
Allegro MicroSystems Europe Limited.
Balfour House, Churchfield Road,
Walton-on-Thames, Surrey KT12 2TD, U.K.
PHONE: 01932-253355
FAX: 01932-246622
Contents of this catalog are subject to change due to modification
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H1-C01EC0-0110015TA
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