SJPE-H4 [SANKEN]
Silicon Schottky Barrier Diode; 硅肖特基二极管型号: | SJPE-H4 |
厂家: | SANKEN ELECTRIC |
描述: | Silicon Schottky Barrier Diode |
文件: | 总5页 (文件大小:195K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SANKEN ELECTRIC CO., LTD.
SJPE-H4
1. Scope
The present specifications shall apply to an SJPE-H4.
2. Outline
Type
Silicon Schottky Barrier Diode
Resin Molded
Structure
Applications
High Frequency Rectification
3. Flammability
UL94V-0(Equivalent)
060718
1/5
61426-01
SANKEN ELECTRIC CO., LTD.
SJPE-H4
4. Absolute maximum ratings
Item
Symbol
VRSM
VRM
IF(AV)
IFSM
I2t
Unit
V
Rating
40
Conditions
No.
1
Transient Peak Reverse Voltage
Peak Reverse Voltage
Average Forward Current
Peak Surge Forward Current
I2t Limiting Value
―
2
V
40
―
Refer to Derating of 7
Half sinewave, one shot
1msec≤ t≤ 10msec
―
3
A
2.0
4
A
40
5
A2s
°C
°C
8.0
Junction Temperature
Storage Temperature
6
Tj
-40~+150
-40~+150
7
Tstg
―
5. Electrical characteristics (Ta=25°C,unless otherwise specified)
Item
Symbol
VF
Unit
V
Value
Conditions
No.
1
Forward Voltage Drop
Reverse Leakage Current
0.6 max.
50 max.
IF=2.0A
VR=VRM
2
IR
μA
Reverse Leakage Current Under
High Temperature
3
4
mA
20 max.
20 max.
VR=VRM, Tj=150°C
H・IR
Thermal Resistance
Rth(j-l) °C /W
Between Junction and lead
060718
2/5
61426-01
SANKEN ELECTRIC CO., LTD.
SJPE-H4
6. Characteristics
IF(AV) - PF
VR (V)
Reverse Voltage (V)
060718
3/5
61426-01
SANKEN ELECTRIC CO., LTD.
SJPE-H4
7. Derating
Tl - IF(AV)
VR=40(V)
Tl (°C)
Lead Temperature (°C)
060718
4/5
61426-01
SANKEN ELECTRIC CO., LTD.
SJPE-H4
8. Package information
8-1Package type, physical dimensions and material
2.0 min.
単位:㎜
Dimensions in ㎜
8-2Appearance
The body shall be clean and shall not bear any stain, rust or flaw.
8-3Marking
① Polarity marking (Cathode band)
② Type number
SJPE-H4 as abbreviated of EH4
③ Lot number
Example) 6718
②
③
6:Last number of Year
7: Month from 1 to 9 for Jan. to Sep.
O for Oct.,N for Nov.,D for Dec.
18: Day
①
060718
5/5
61426-01
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