SLA5031 [SANKEN]

N-channel With built-in flywheel diode; N沟道借助内置的续流二极管
SLA5031
型号: SLA5031
厂家: SANKEN ELECTRIC    SANKEN ELECTRIC
描述:

N-channel With built-in flywheel diode
N沟道借助内置的续流二极管

二极管
文件: 总1页 (文件大小:25K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
N-channel  
• • •  
External dimensions  
SLA  
With built-in flywheel diode  
A
SLA5031  
Absolute maximum ratings  
Electrical characteristics  
(Ta=25°C)  
(Ta=25°C)  
Specification  
Symbol  
Ratings  
Unit  
Symbol  
Unit  
Conditions  
min  
typ  
max  
VDSS  
VGSS  
ID  
60  
V
V
V(BR)DSS  
IGSS  
60  
V
nA  
µA  
V
ID=250µA, VGS=0V  
VGS=±10V  
±10  
±500  
250  
2.0  
±5  
A
IDSS  
VDS=60V, VGS=0V  
VDS=10V, ID=250µA  
VDS=10V, ID=5A  
VGS=10V, ID=2.5A  
VGS=4V, ID=2.5A  
VDS=25V, f=1.0MHz,  
VGS=0V  
ID(pulse)  
EAS*  
IF  
±10 (PW1ms)  
A
VTH  
1.0  
3.1  
2
mJ  
A
Re(yfs)  
4.6  
0.17  
0.25  
400  
160  
80  
S
5 (PW0.5ms, Du25%)  
10 (PW10ms, Single pulse)  
120  
0.22  
0.30  
RDS(ON)  
IFSM  
VR  
A
V
Ciss  
Coss  
ton  
pF  
pF  
ns  
ns  
V
5
(Ta=25°C, with all circuits operating, without heatsink)  
W
W
°C/W  
PT  
35 (Tc=25°C,with all circuits operating, with infinite heatsink  
25 (Junction-Air, Ta=25°C, with all circuits operating  
)
ID=5A, VDD 30V,  
VGS=5V,  
θ j-a  
θ j-c  
)
toff  
50  
see Fig. 3 on page 16.  
ISD=5A, VGS=0V  
ISD=±100mA  
3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W  
VSD  
trr  
1.1  
1.5  
VISO  
Tch  
Tstg  
1000 (Between fin and lead pin, AC)  
Vrms  
°C  
150  
ns  
150  
–40 to +150  
°C  
Diode for flyback voltage absorption  
* : VDD=20V, L=1mH, ID=1.7A, unclamped, see Fig. E on page 15.  
Speciication  
Symbol  
Unit  
Conditions  
min  
typ  
max  
Equivalent circuit diagram  
VR  
VF  
IR  
120  
V
V
IR=10µA  
IF=1A  
2
3
4
9
10 11  
1.0  
1.2  
10  
µA  
ns  
VR=120V  
IF=±100mA  
1
5
8
12  
trr  
100  
6
7
Characteristic curves  
ID-VDS Characteristics (Typical)  
ID-VGS Characteristics (Typical)  
RDS(ON)-ID Characteristics (Typical)  
(VDS=10V)  
0.3  
10  
10  
10V  
8
8
6
4
2
0
4V  
4V  
0.2  
6
3.5V  
VGS=10V  
4
T
C
=–40°C  
25°C  
0.1  
V
GS=3V  
125°C  
2
0
0
0
2
4
6
8
10  
0
1
2
3
4
5
6
7
8
9
10  
0
1
2
3
4
5
VDS (V)  
ID (A)  
V
GS (V)  
Re(yfs)-ID Characteristics (Typical)  
RDS(ON)-TC Characteristics (Typical)  
Capacitance-VDS Characteristics (Typical)  
V
GS=0V  
(ID=2.5A)  
f=1MHz  
(VDS=10V)  
1000  
500  
0.4  
0.3  
0.2  
0.1  
0
10  
Ciss  
5
4V  
C
°
125  
Coss  
V
GS=10V  
100  
50  
25°C  
1
Crss  
0.5  
0.3  
10  
150  
–40  
0
50  
100  
0
10  
20  
30  
DS (V)  
40  
50  
0.05 0.1  
0.5  
1
5
10  
V
T
C (°C)  
I
D
(A)  
IDR-VSD Characteristics (Typical)  
Safe Operating Area (SOA)  
PT-Ta Characteristics  
(TC=25°C)  
40  
35  
10  
20  
With Silicone Grease  
Natural Cooling  
All Circuits Operating  
I
D (pulse) max  
10  
5
8
6
4
2
0
30  
25  
20  
15  
10  
With Infinite Heatsink  
10V  
1
4V  
0.5  
Without Heatsink  
V
GS=0V  
5
0
0.1  
0.5  
0
50  
100  
150  
0
0.5  
1.0  
1.5  
1
5
10  
50 100  
Ta (°C)  
V
SD (V)  
VDS (V)  
67  

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