SPB-G56SVL [SANKEN]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 6A, Silicon,;
| 型号： | SPB-G56SVL |
| 厂家： | 
SANKEN ELECTRIC |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 1 Element, 6A, Silicon, 二极管 |
| 文件： | 总2页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Schottky Barrier Diodes (Power Surface Mount) 30V, 40V, 60V
Electrical Characteristics (Ta =25°C)
Absolute Maximum Ratings
Others
Parameter
IFSM
(A)
50Hz
Half-cycle Sinewave
Single Shot
Tj
(°C)
Tstg
(°C)
VF
(V)
IR
(mA)
IR
t
rr
(H)
(mA)
Rth (j-c)
Mass
(g)
(ns)
VRM
(V)
IF (AV)
(A)
Fig.
Remarks
Type No.
max per
element
VR =VRM
max per element
V
R
=V
, Ta=100°C
IF
(A)
IF
/IRP
RM
(°C/ W)
max per element
(mA)
30
30
6.0
6.0
0.45
3.0
3.5
—
—
SPJ-63S
(Tj=125°C)
Center-tap
50
3.0
SPB-64S
5.0
0.29
A
50
50 100/100
3.0
0.55
SPB-G34S
SPB-G54S
MPE-24H
SPB-G56S
1 Chip
–40 to +150
40
60
60
100
60
5.0
7.5
5.0
5.0
5.0
50
B
A
15.0
6.0
0.6
0.7
0.75
3.0
—
—
2.5
5.0
1.04 Center-tap
0.29 1 Chip
(Tj=150°C)
50
50 100/100
SPJ -63S
IFMS Rating
50
20ms
40
30
20
10
0
1
1
1
5
10
50
50
50
Overcurrent Cycles
SPB-64S
VF—IF Characteristics (Typical)
VR—IR Characteristics (Typical)
IFMS Rating
Tc —IF(AV) Derating
V
R=40V
100
10
50
40
30
20
10
0
30
10
6.0
Sinewave
D.C.
5.0
20ms
=
T
a
125ºC
100ºC
=
t / T 1/6
1
0.1
4.0
3.0
2.0
1
=
t / T 1/ 3
=
t / T 1/2
60ºC
27ºC
0.1
=
T
a
125ºC
100ºC
60ºC
0.01
0.001
0.01
1.0
0
27ºC
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
60
5
10
70
80
90
100
110 120
130
Case Temperature Tc (°C)
Forward Voltage VF (V)
Reverse Voltage VR (V)
Overcurrent Cycles
SPB-G34S
VF—IF Characteristics (Typical)
VR—IR Characteristics (Typical)
IFMS Rating
Tc —IF(AV) Derating
VR=40V
D.C.
3.0
100
50
40
30
20
10
0
30
10
2.5
2.0
1.5
=
20ms
T
a
125ºC
100ºC
10
1
1
0.1
=
t / T 1/6
=
t / T 1/ 3
60ºC
=
1.0
0.5
0
T
a
125ºC
100ºC
60ºC
=
t / T 1/2
0.1
0.01
0.001
28ºC
30
28ºC
Sinewave
0.01
0.005
0
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
40
50
60
5
10
95
100 105 110
115 120
125
Case Temperature Tc (°C)
Forward Voltage VF (V)
Reverse Voltage VR (V)
Overcurrent Cycles
2.3±0.4
5.4
4.1
External Dimensions Fig.
(Unit: mm)
A
6.5±0.4
5.4±0.4
Fig.
B
0.55 ±0.1
10.2
4.44
1.3
2.9
Flammability:
UL94V-0 or Equivalent
➀
➁
4.9
➂
1.27
1.2
0 to 0.25
Type No.
Polarity
Lot No.
➀
➁
➂
2.59
1.15±0.1
0.8±0.1
0.8±0.1
0.86
2.29±0.5
2.29±0.5
1
2
(Common to backside of case)
3
Anode
0.55 ±0.1
0.76
2.54
1 Chip
Center-tap
N.C
Cathode
0.4
2.54
1.5 max
Anode
Cathode (Common) Anode
1
2
3
86
SPB-G54S
VF—IF Characteristics (Typical)
VR —IR Characteristics (Typical)
IFMS Rating
Tc —IF(AV) Derating
V
R
=40V
5.0
4.0
3.0
2.0
1.0
0
500
100
30
10
60
50
40
30
20
D.C.
20ms
=
T
a
125ºC
100ºC
=
t / T 1/6
10
1
1
0.1
=
t / T 1/ 3
60ºC
=
T
a
125ºC
100ºC
60ºC
0.1
=
t / T 1/2
0.01
0.001
28ºC
30
10
0
Sinewave
28ºC
0.01
0.005
0
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
40
50
60
1
5
10
50
70
80
90
100
110 120
130
150
130
Case Temperature Tc (°C)
Forward Voltage VF (V)
Reverse Voltage VR (V)
Overcurrent Cycles
MPE-24H
IFMS Rating
Tc —IF(AV) Derating
15
100
80
60
40
20
0
t / T 1/2
=
20ms
D.C.
Sinewave
10
=
t / T 1/ 3
=
t / T 5/6
5
0
Tj=150ºC
VR=40V
t
T
100
110
120
130
140
1
5
10
50
Overcurrent Cycles
Case Temperature Tc (°C)
SPB-G56S
VF—IF Characteristics (Typical)
VR —IR Characteristics (Typical)
IFMS Rating
Tc —IF(AV) Derating
V
=60V
R
6.0
50
10
20
10
60
50
40
30
20
D.C.
=
T
a
125ºC
5.0
20ms
100ºC
1
4.0
3.0
2.0
1.0
0
1
=
t / T 1/6
60ºC
23ºC
0.1
0.1
0.01
=
t / T 1/ 3
=
T
a
125ºC
100ºC
60ºC
=
0.01
t / T 1/2
10
0
23ºC
Sinewave
0.001
0.001
1
5
10
50
70
80
90
100
110 120
0
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
50
60
70
Case Temperature Tc (°C)
Forward Voltage VF (V)
Reverse Voltage VR (V)
87
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