STA415A [SANKEN]
Power Transistor Array; 功率晶体管阵列
| 型号： | STA415A |
| 厂家： | 
SANKEN ELECTRIC |
| 描述： | Power Transistor Array |
| 文件： | 总1页 (文件大小：28K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistor Array STA415A
Absolute Maximum Ratings
Electrical Characteristics
External Dimensions STA4 (LF412)
(Ta =25ºC)
(Ta =25ºC)
Symbol
Ratings
35±5
Unit
V
Symbol
Test Conditions
Ratings
10max
2.7max
31 to 41
400min
0.2max
0.5max
2.5max
800±120
2.0±0.4
50min
Unit
µA
mA
V
CBO
CB
25.25±0.2
I
V
=
30V
6V
V
CBO
V
=
V
CEO
36±5
I
EBO
V
EB
b
I
C
= 25mA
V
EBO
6
V
V
CEO
a
I
C
h
V
=
4V, I
C
=
=
0.7A
5mA
2 (pulse 3
30
*
)
A
FE
CE
I
B
mA
W
W
ºC
ºC
I
C
=
0.5A, I
B
V
V
V
CE (sat)
4 (Ta
=
=
25ºC)
25ºC)
I
=
1A,
I
= 5mA
2A
C
B
P
T
(2.54)
1.0±0.25
0.5±0.15
18 (Tc
V
FEC
I
=
V
FEC
0±0.3
9 • 2.54=22.86±0.05
0±0.3
Tj
150
–55 to +150
R
R
Ω
B
kΩ
mJ
Tstg
BE
C1.5±0.5
Es/b
L = 10mH, single pulse
*
PW 1ms, Duty 25%
1
E
2
B
3
C
4
B
5
C
6
B
7
C
8
B
9
C
10
E
Typical Switching Characteristics
V
(V)
R
(Ω)
I
(A)
V
(V)
V
(V)
I
I
t
t
t
f
(µs)
CC
L
C
BB1
BB2
B1
B2
on
stg
a) Type No.
b) Lot No.
(mA) (mA)
(µs)
(µs)
12
12
1
10
–5
5
0
1.0
8.5
2.5
(Unit: mm)
VCE (sat)— IC Temperature Characteristics
3
VCE (sat)— IB Temperature Characteristics
■
■
IC — VCE Characteristics (typ.)
3
■
(IC = 0.5A)
0.5
8mA
5mA
IC/ IB
=
100
2
1
2
1
0
3mA
2mA
T
=
125ºC
75ºC
25ºC
a
T
a
=
125ºC
75ºC
0.25
25ºC
–40ºC
IB
=
1mA
–40ºC
0
0
1
10
100
400
0
0.5
1
5
0
1
2
3
4
5
6
IB (mA)
IC (A)
VCE (V)
hFE — IC Temperature Characteristics
j-a — t Characteristics
20
■
t
t
t — IC Characteristics (typ.)
f
■
■
on• stg•
(VCE
=
4V)
3000
50
VCC
IB
–IB
=
12V
5mA
0A
Single pulse
=
t
stg
10
5
=
10
5
1000
500
t
f
t
on
T
a
=
125ºC
75ºC
1
0.5
25ºC
100
50
–40ºC
1
0.1
0
0.5
1.0
1.5
2.0
1
10
100
1000
0.01
0.1
0.5
1
4
Ic (A)
t (ms)
IC (A)
Safe Operating Area (single pulse)
PT — Ta Derating
20
■
■
Equivalent Circuit Diagram
(per element)
5
3
5
7
9
1
10
RB
4
6
8
2
1
0.5
RBE
10
Without heatsink
natural air cooling
0.1
0
1
5
10
50
0
50
100
150
VCE (V)
Ta (ºC)
64
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