TF361S [SANKEN]
TO-220F 3A Thyristor; TO- 220F 3A晶闸管
| 型号： | TF361S |
| 厂家： | 
SANKEN ELECTRIC |
| 描述： | TO-220F 3A Thyristor |
| 文件： | 总1页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TO-220F 3A Thyristor
TF321S, TF341S, TF361S
■Features
●Repetitive peak off-state voltage: VDRM=200, 400, 600V
External Dimensions
±0.2
4.2
2.8
±0.2
±0.2
(Unit: mm)
10.0
φ
3.3
C0.5
●Average on-state current: IT(AV)=3A
●Gate trigger current: IGT=15mA max
a
b
●Isolation voltage: VISO=1500V(50Hz Sine wave, RMS)
±0.15
1.35
±0.15
1.35
0.85
+0.2
–0.1
+0.2
–0.1
±0.2
2.54
2.54 0.45
2.4
±0.2
2.2
(1). Cathode(K)
(2). Anode(A)
(3). Gate(G)
a. Part Number
b. Lot Number
(1) (2) (3)
Weight: Approx. 2.1g
■Absolute Maximum Ratings
Ratings
Parameter
Symbol
Unit
Conditions
TF321S TF341S TF361S
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Non-repetitive peak reverse voltage
Average on-state current
RMS on-state current
VDRM
VRRM
VDSM
VRSM
IT(AV)
IT (RMS)
ITSM
200
200
300
300
400
600
600
700
700
V
V
400
Tj=–40 to +125°C, RGK=1kΩ
500
V
500
V
3.0
A
50Hz Half-cycle sinewave, Continuous current, Tc=93°C
50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C
4.7
A
Surge on-state current
60
2.0
A
Peak forward gate current
Peak forward gate voltage
Peak reverse gate voltage
Peak gate power loss
IFGM
A
f
50Hz, duty 10%
VFGM
VRGM
PGM
10
V
5.0
V
f
f
50Hz
5.0
W
W
°C
°C
V
50Hz, duty 10%
Average gate power loss
Junction temperature
PG(AV)
Tj
0.5
–40 to +125
–40 to +125
1500
Storage temperature
Tstg
VISO
Isolation voltage
50Hz Sine wave, RMS, Terminal to Case, 1 min.
■Electrical Characteristics
Ratings
typ
Parameter
Symbol
Unit
Conditions
min
max
2.0
2.0
1.4
1.5
15
mA
mA
V
Off-state current
IDRM
IRRM
VTM
VGT
IGT
Tj=125°C, VD=VDRM(VRRM), RGK=1kΩ
TC=25°C, ITM=5A
Reverse current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
0.7
3.0
V
VD=6V, RL=10Ω, TC=25°C
mA
V
VGD
IH
0.1
VD=1/2×VDRM, Tj=125°C, RGK=1kΩ
RGK=1kΩ, Tj=25°C
5.0
50
30
mA
V/µS
µS
Critical rate-of-rise of off-state voltage
Turn-off time
dv/dt
tq
VD=1/2×VDRM, Tj=125°C, RGK=1kΩ, CGK=0.033µF
Tc=25°C
Junction to case
Thermal resistance
Rth
5.0
°C/W
8
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