TFA107(I) [SANKEN]
Silicon Controlled Rectifier, 15.7A I(T)RMS, 700V V(DRM), 1 Element, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220F, FM20, SIP-3;
| 型号： | TFA107(I) |
| 厂家： | 
SANKEN ELECTRIC |
| 描述： | Silicon Controlled Rectifier, 15.7A I(T)RMS, 700V V(DRM), 1 Element, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220F, FM20, SIP-3 栅极 触发装置 可控硅整流器 局域网 |
| 文件： | 总12页 (文件大小：278K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TFA10x Series
Reverse Blocking Triode Thyristor
Features and Benefits
Description
▪ Exceptional reliability
This Sanken reverse blocking triode thyristor is designed for
AC power control, providing reliable, uniform switching for
half-cycle AC applications.
▪ Small fully-molded SIP package with heatsink mounting
for high thermal dissipation and long life
▪ Operating junction temperature to 150°C
▪ VDRM of 700 or 800 V
▪ 15.7 ARMS on-state current
▪ 7 mA typical gate trigger current
▪ Uniform switching
In comparison with other products on the market, the TFA10x
series provides increased isolation voltage (1800 VACRMS),
guaranteed for up to 1 minute. In addition, commutation
dv/dt is improved.
▪ UL Recognized Component (File No.: E118037) (suffix I)
Applications
Package: 3-pin SIP (TO-220F)
▪ Motor control for small tools
▪ Temperature control, light dimmers, electric blankets
▪ General use switching mode power supplies (SMPS)
Not to scale
Typical Applications
M
Single-phase motor control (for example, electric tool)
In-rush current control (for example, SMPS)
28105.04
TFA10x
Series
Reverse Blocking Triode Thyristor
Selection Guide
Part Number
VDRM
(V)
UL-Recognized
Component
Package
Packing
TFA107(I)
TFA107S
TFA108(I)
TFA108S
700
700
800
800
Yes
–
Yes
–
3-pin fully molded SIP with
heatsink mount
50 pieces per tube
Absolute Maximum Ratings
Characteristic
Symbol
Notes
Rating
700
Units
V
V
V
TFA107x
Peak Repetitive Off-State Voltage
VDRM
TJ = –40°C to 150°C, RGREF = 1 kΩ
800
TFA108x
Isolation Voltage
VISO
IT(AV)
AC RMS applied for 1 minute between lead and case
1800
50 Hz half cycle sine wave, Conduction angle (α) = 180°,
continuous operation, TC = 86°C
Average On-State Current
RMS On-State Current
10.0
A
IT(RMS)
15.7
176
A
A
f = 60 Hz
Surge On-State Current
I2t Value for Fusing
ITSM
Half cycle sine wave, single, non-repetitive
f = 50 Hz
160
128
A
I2t
Value for 50 Hz half cycle sine wave, 1 cycle, ITSM = 160 A
A2•s
IT = IT(RMS) × π, VD = VDRM × 0.5, f ≤ 60 Hz, tgw ≥ 10 μs, tgr ≤ 250
ns, igp ≥ 30 mA (refer to Gate Trigger Circuit diagram)
Critical Rising Rate of On-State Current
di/dt
50
A/μs
Peak Forward Gate Current
Peak Forward Gate Voltage
Peak Reverse Gate Current
Peak Gate Power Dissipation
Average Gate Power Dissipation
Junction Temperature
IFGM
VFGM
VRGM
PGM
f ≥ 50 Hz, duty cycle ≤ 10%
f ≥ 50 Hz, duty cycle ≤ 10%
f ≥ 50 Hz
2.0
10
A
V
5.0
V
f ≥ 50 Hz, duty cycle ≤ 10%
TJ < TJ(max)
5.0
W
W
ºC
ºC
PGM(AV)
TJ
0.5
–40 to 150
–40 to 150
Storage Temperature
T
stg
Thermal Characteristics May require derating at maximum conditions
Characteristic
Symbol
Test Conditions
Value
Units
Package Thermal Resistance
(Junction to Case)
RθJC
For AC
3.4
ºC/W
Pin-out Diagram
A
K
Terminal List Table
Number
Name
Function
1
2
3
A
K
G
Anode terminal
Cathode terminal
Gate control
G
All performance characteristics given are typical values for circuit or
system baseline design only and are at the nominal operating voltage and
an ambient temperature, TA, of 25°C, unless otherwise stated.
1
2 3
Allegro MicroSystems, Inc.
115 Northeast Cutoff
2
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
TFA10x
Series
Reverse Blocking Triode Thyristor
ELECTRICAL CHARACTERISTICS
Characteristics
Off-State Leakage Current
Reverse Leakage Current
On-State Voltage
Symbol
IDRM
IRRM
VTM
VGT
IGT
Test Conditions
VD = VDRM, TJ = 150°C, RGREF = 1 kꢀ
VD = VDRM, TJ = 150°C, RGREF = 1 kꢀ
ITM = 20 A, TC = 25°C
Min.
–
Typ.
–
Max.
2.0
2.0
1.35
1.0
15
Unit
mA
mA
V
–
–
–
–
Gate Trigger Voltage
Gate Trigger Current
Gate Non-trigger Voltage
Holding Current
VD = 6 V, RL = 10 ꢀ, TC = 25°C
VD = 6 V, RL = 10 ꢀ, TC = 25°C
VD = VDRM ×0.5, RGREF = 1 kꢀ, TJ = 125°C
RGREF = 1 kꢀ, TJ = 25°C
–
–
V
–
7
mA
V
VGD
IH
0.2
–
–
–
20
–
mA
Critical Rising Rate of
Off-State Voltage
VD = VDRM ×0.5, TJ = 125°C, RGREF = 1 kꢀ,
CGREF = 0.033 μF
dv/dt
–
300
–
V/μs
Test Circuit 1
Voltage-Current Characteristic
IF
ITM
A
K
VTM
(On state)
RGREF
VRRM
G
IH
VR
IDRM
VF
CGREF
IRRM
(Off state)
VTM
VDRM
Gate Trigger Current
IR
tgr
igp
tgw
Allegro MicroSystems, Inc.
115 Northeast Cutoff
3
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
TFA10x
Series
Reverse Blocking Triode Thyristor
Commutation Timing Diagrams
Q4
Supply VAC
Q
A
A = Conduction angle
VGT
VGATE
Q
ITSM
On-State
Currrent
Q
Allegro MicroSystems, Inc.
115 Northeast Cutoff
4
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
TFA10x
Series
Reverse Blocking Triode Thyristor
Performance Characteristics at TA = 25°C
200
180
160
140
120
100
80
100
10
1
TJ = 150°C
Surge On-State
Current versus
Quantity of
Cycles
Maximum On-State
Current versus
Maximum On-State
Voltage
TJ = 25°C
60
40
20
0
0
1
10
100
0.6
1.0
1.4
1.8
V
2.2
T (max) (V)
2.6
3.0
3.4
Quantity of Cycles
16
14
12
10
8
200
180
160
140
120
100
80
Half cycle sine wave
Half cycle sine wave
A = 180°
A = 120°
Maximum Allowable
Case Temperature
versus Average
A = 90°
A = 60°
Maximum Average
Power Dissipation
versus Average
On-State Current
A = 30°
On-State Current
6
A = 30°
A = 60°
A = 90°
60
A = 120°
A = 180°
4
40
2
20
0
0
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
IT(AV) (A)
IT(AV) (A)
2
100
10
IGM = 2 A
VGM = 10 V
PGM
= 5 W
Typical Gate
Trigger Voltage
versus
Junction Temperature
at VD = 6 V
Gate Voltage
versus
Gate Current
VGT (–40°C)
= 1.5 V
1
PG(AV)
= 0.5 W
VGT (25°C)
= 1 V
1
and RL = 10 Ω
IGT (–40°C)
= 30 mA
IGT (25°C) = 15 mA
VGD (125°C)= 0.2 V
0.1
0
10
100
1000
10 000
–60
–20
20
60
100
140
IG (mA)
TJ (°C)
100
10
1
100
R
= 10 kΩ
GREF
10
1
Typical Gate
Trigger Current
versus
Junction Temperature
at VD = 6 V
Typical
Holding Current
versus
Junction Temperature
at RGREF = 10 kΩ
and RL = 10 Ω
0.1
–60
0.1
–60
–20
20
60
100
140
–20
20
60
100
140
TJ (°C)
TJ (°C)
Allegro MicroSystems, Inc.
115 Northeast Cutoff
5
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
TFA10x
Series
Reverse Blocking Triode Thyristor
Transient Thermal Impedence versus Voltage Pulse Duration
For AC
10
1
0.1
1
10
100
1000
10 000
100 000
QT (ms)
Allegro MicroSystems, Inc.
115 Northeast Cutoff
6
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
TFA10x
Series
Reverse Blocking Triode Thyristor
TO-220F Package Outline Drawing
4.2 ±0.2
2.8 ±0.2
10.0 ±0.2
0.5 ±0.1 × 45°
Ø3.3 ±0.2
Branding
Area
XXXXXXXX
XXXXX
2.6 ±0.1
2.2 ±0.2
1.35 ±0.15
1.35 ±0.15
+0.2
–0.1
0.45
+0.2
–0.1
0.85
View A
View B
2.54 ±0.1
Terminal dimension at lead tips
1
2
3
0.7 MAX
0.7 MAX
View A
View B
Gate burr: 0.3 mm (max.), mold flash may appear at opposite side
Terminal core material: Cu
Branding codes (exact appearance at manufacturer discretion):
1st line, type: FA10xx
Terminal treatment: Ni plating and Pb-free solder dip
Leadform: 600
2nd line, lot:
YM
Where: Y is the last digit of the year of manufacture
Package: TO-220F (FM20)
M is the month (1 to 9, O, N, D)
Dimensions in millimeters
Leadframe plating Pb-free. Device
meets RoHS requirements.
Allegro MicroSystems, Inc.
115 Northeast Cutoff
7
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
TFA10x
Series
Reverse Blocking Triode Thyristor
Packing Specification
Tube Packing
530
7
35
540
110
172
50 pieces per tube
25 tubes per layer
3 layers per carton
3750 pieces per outer carton
Dimensions in mm
Allegro MicroSystems, Inc.
115 Northeast Cutoff
8
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
TFA10x
Series
Reverse Blocking Triode Thyristor
Bulk Packing
165
430
175
36
405
123
200 pieces per tray
5 trays per inner carton
4 inner cartons per outer carton
4000 pieces maximum per outer carton
Dimensions in millimeters
Allegro MicroSystems, Inc.
115 Northeast Cutoff
9
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
TFA10x
Series
Reverse Blocking Triode Thyristor
WARNING —These devices are designed to be operated at lethal voltages and energy levels. Circuit designs
thatembodythesecomponentsmustconformwithapplicablesafetyrequirements. Precautionsmustbe
takentopreventaccidentalcontactwithpower-linepotentials. Donotconnectgroundedtestequipment.
The use of an isolation transformer is recommended during circuit development and breadboarding.
Because reliability can be affected adversely by improper storage
Heatsink Mounting Method
environments and handling methods, please observe the following
cautions.
Cautions for Storage
•
Torque When Tightening Mounting Screws. Thermal resistance
increases when tightening torque is low, and radiation effects are
decreased. When the torque is too high, the screw can strip, the
heatsink can be deformed, and distortion can arise in the product frame.
To avoid these problems, observe the recommended tightening torques
for this product package type 0.490 to 0.686 N•m (5 to 7 kgf•cm).
•
Ensure that storage conditions comply with the standard
temperature (5°C to 35°C) and the standard relative humidity
(around 40 to 75%); avoid storage locations that experience
extreme changes in temperature or humidity.
•
•
Avoid locations where dust or harmful gases are present and
avoid direct sunlight.
Reinspect for rust on leads and solderability of products that have
been stored for a long time.
•
Diameter of Heatsink Hole: < 4 mm. The deflection of the press mold
when making the hole may cause the case material to crack at the joint
with the heatsink. Please pay special attention for this effect.
Soldering
Cautions for Testing and Handling
When tests are carried out during inspection testing and other
standard test periods, protect the products from power surges
from the testing device, shorts between adjacent products, and
shorts to the heatsink.
•
When soldering the products, please be sure to minimize the
working time, within the following limits:
260±5°C 10 s
Remarks About Using Silicone Grease with a Heatsink
350±5°C 3 s
•
•
•
When silicone grease is used in mounting this product on a
heatsink, it shall be applied evenly and thinly. If more silicone
grease than required is applied, it may produce stress.
Coat the back surface of the product and both surfaces of the
insulating plate to improve heat transfer between the product and
the heatsink.
Volatile-type silicone greases may permeate the product and
produce cracks after long periods of time, resulting in reduced
heat radiation effect, and possibly shortening the lifetime of the
product.
Our recommended silicone greases for heat radiation purposes,
which will not cause any adverse effect on the product life, are
indicated below:
•
Soldering iron should be at a distance of at least 1.5 mm from the
body of the products
Electrostatic Discharge
•
When handling the products, operator must be grounded.
Grounded wrist straps worn should have at least 1 Mꢀ of
resistance to ground to prevent shock hazard.
•
•
•
Workbenches where the products are handled should be
grounded and be provided with conductive table and floor mats.
•
When using measuring equipment such as a curve tracer, the
equipment should be grounded.
When soldering the products, the head of soldering irons or the
solder bath must be grounded in other to prevent leak voltages
generated by them from being applied to the products.
Type
G746
Suppliers
Shin-Etsu Chemical Co., Ltd.
Momentive Performance Materials
Dow Corning Toray Silicone Co., Ltd.
•
The products should always be stored and transported in our
shipping containers or conductive containers, or be wrapped in
aluminum foil.
YG6260
SC102
Allegro MicroSystems, Inc.
115 Northeast Cutoff
10
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
TFA10x
Series
Reverse Blocking Triode Thyristor
The products described herein are manufactured in Japan by Sanken Electric Co., Ltd. for sale by Allegro MicroSystems, Inc.
Sanken and Allegro reserve the right to make, from time to time, such departures from the detail specifications as may be required to permit im-
provements in the performance, reliability, or manufacturability of its products. Therefore, the user is cautioned to verify that the information in this
publication is current before placing any order.
When using the products described herein, the applicability and suitability of such products for the intended purpose shall be reviewed at the users
responsibility.
Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at
a certain rate is inevitable.
Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems
against any possible injury, death, fires or damages to society due to device failure or malfunction.
Sanken products listed in this publication are designed and intended for use as components in general-purpose electronic equipment or apparatus
(home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Their use in any application requiring radiation
hardness assurance (e.g., aerospace equipment) is not supported.
When considering the use of Sanken products in applications where higher reliability is required (transportation equipment and its control systems
or equipment, fire- or burglar-alarm systems, various safety devices, etc.), contact a company sales representative to discuss and obtain written con-
firmation of your specifications.
The use of Sanken products without the written consent of Sanken in applications where extremely high reliability is required (aerospace equip-
ment, nuclear power-control stations, life-support systems, etc.) is strictly prohibited.
The information included herein is believed to be accurate and reliable. Application and operation examples described in this publication are given
for reference only and Sanken and Allegro assume no responsibility for any infringement of industrial property rights, intellectual property rights, or
any other rights of Sanken or Allegro or any third party that may result from its use.
Anti radioactive ray design is not considered for the products listed herein.
Copyright © 2008-2009 Allegro MicroSystems, Inc.
This datasheet is based on Sanken datasheet SSE-24051
Allegro MicroSystems, Inc.
115 Northeast Cutoff
11
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
TFA10x
Series
Reverse Blocking Triode Thyristor
Worldwide Contacts
Asia-Pacific
China
Singapore
Sanken Electric Singapore Pte. Ltd.
150 Beach Road, #14-03 The Gateway West
Singapore 189720
Sanken Electric Hong Kong Co., Ltd.
Suite 1026, Ocean Centre
Canton Road, Tsimshatsui
Tel: 65-6291-4755, Fax: 65-6297-1744
Kowloon, Hong Kong
Tel: 852-2735-5262, Fax: 852-2735-5494
Europe
Sanken Power Systems (UK) Limited
Pencoed Technology Park
Pencoed, Bridgend CF35 5HY, United Kingdom
Tel: 44-1656-869-100, Fax: 44-1656-869-162
Sanken Electric (Shanghai) Co., Ltd.
Room 3202, Maxdo Centre
Xingyi Road 8, Changning District
Shanghai, China
Tel: 86-21-5208-1177, Fax: 86-21-5208-1757
North America
United States
Taiwan Sanken Electric Co., Ltd.
Room 1801, 18th Floor
88 Jung Shiau East Road, Sec. 2
Taipei 100, Taiwan R.O.C.
Tel: 886-2-2356-8161, Fax: 886-2-2356-8261
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01606, U.S.A.
Tel: 1-508-853-5000, Fax: 1-508-853-7895
Japan
Sanken Electric Co., Ltd.
Overseas Sales Headquarters
Metropolitan Plaza Building
1-11-1 Nishi-Ikebukuro, Toshima-ku
Tokyo 171-0021, Japan
Allegro MicroSystems, Inc.
14 Hughes Street, Suite B105
Irvine, California 92618, U.S.A.
Tel: 1-949-460-2003, Fax: 1-949-460-7837
Tel: 81-3-3986-6164, Fax: 81-3-3986-8637
Korea
Sanken Electric Korea Co., Ltd.
Samsung Life Yeouido Building 16F
23-10, Yeouido-Dong, Yeongdeungpo-gu
Seoul 150-734, Korea
Tel: 82-2-714-3700, Fax: 82-2-3272-2145
Allegro MicroSystems, Inc.
115 Northeast Cutoff
12
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
相关型号：
TFA108(I)
Silicon Controlled Rectifier, 15.7A I(T)RMS, 10000mA I(T), 800V V(DRM), 1 Element, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220F, FM20, SIP-3
ALLEGRO
TFA108S
Silicon Controlled Rectifier, 15.7A I(T)RMS, 10000mA I(T), 800V V(DRM), 1 Element, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220F, FM20, SIP-3
ALLEGRO
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