SMG04C60 [SANREX]
THYRISTOR; 晶闸管
| 型号： | SMG04C60 |
| 厂家： | 
SANREX CORPORATION |
| 描述： | THYRISTOR |
| 文件： | 总2页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
THYRISTOR
SMG04C60
Thyristor SMG04C60 is designed for full wave AC, DC control
TO92
applications. It can be used as an ON/OFF function or for phase control operation.
5.0±0.2
4.0±0.2
Typical Applications
●
Home Appliances : Electric Blankets, Starter for FL
●
Industrial Use
: SMPS, Solenoid for Breakers, Motor Controls, Heater Controls
2.3±0.2
3
2
1
Features
●
●
●
IT(AV)=0.4A
High Surge Current
Low Voltage Drop
+0.2
+0.2
0.45-0.1
0.45-0.1
1 Gate
2 A
3 K
1
2
3
+0.6
+0.6
2.50-0.2
2.50-0.2
Unit：mm
Identifying Code：
S04C6
■Maximum Ratings
（Tj=25℃ unless otherwise specified）
Symbol
Item
Reference
Ratings
600
Unit
V
VRRM
VRSM
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S. On-State Current
Surge On-State Current
720
V
VDRM
IT（AV）
IT（RMS）
ITSM
600
V
0.4
A
Single phase, half wave, 180°, conduction, Ta＝55℃
Single phase, half wave, 180°, conduction, Ta＝55℃
50/60Hz, 1／ cycle Peak value, non-repetitive
0.63
A
A
9.1 10
/
2
2
2
2
I t
I t
0.4
A S
GM
P
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
0.5
W
W
A
G（AV）
P
0.1
IFGM
VFGM
VRGM
Tj
0.3
6
6
V
Peak Gate Voltage（Forward）
Peak Gate Voltage（Reverse）
Operating Junction Temperature
Storage Temperature
V
－40～＋125
－40～＋125
0.2
℃
℃
g
Tstg
Mass
■Electrical Characteristics
Ratings
Symbol
Item
Reference
Unit
Min.
Typ.
Max.
0.5
IDRM
IRRM
VTM
IGT
Repetitive Peak Off-State Current
Repetitive Peak Reverse Current
Peak On-State Voltage
Gate Trigger Current
Gate Trigger Voltage
Non-Trigger Gate Voltage
Holding Current
mA
mA
V
Tj＝125℃, VD
＝
VDRM
VRRM
,
RGK＝1k
Ω
Ω
0.5
Tj＝125℃, VR
＝
,
RGK＝1k
1.2
IT＝1.2
VD＝6
A
,
, Inst. measurement
100
0.8
μA
V
V
RL＝100Ω
VGT
VGD
IH
1
0.2
V
Tj＝125℃, VD
＝
／VDRM
,
RGK＝1kΩ
2
300
μA
（
）
Rth j-a
Thermal Resistance
Junction to ambient
150
℃ W
/
SMG04C60
Gate Characteristics
On-State Voltage（MAX）
Ｔｊ=２５℃
１０
１０
Peak Gate Voltage（６V ）
１
１
２５℃
Non-Trigger Gate Voltage (0.2V)
０.１
０.０１
０.１
０
０.１
１
１０
１００
１０００
０.５
１
１.５
２
２.５
３
Gate Curren（t mA）
On-State Voltage（V）
Average On-State Current vs Power
Dissipation（Single phase half wave）
Average On-State Current vs Ambient
Temperature（Single phase half wave）
０.５
０.４
０.３
０.２
１３０
１２０
１１０
１００
９０
θ
＝
１８０゜
π
０
2π
θ
＝
１２０゜
θ
３
６
０゜
θ
＝
９０゜
θ：Conduction Angle
θ
＝
６０゜
θ
＝
３０゜
８０
７０
π
０
2π
θ
３
６０
０.１
０
６０゜
θ
＝
３０゜
θ
＝
６０゜
θ
＝
９０゜
θ
＝
１２０゜
θ
＝
１８０゜
θ
：Conduction Angle
５０
４０
０
０
０.０５ ０.１ ０.１５ ０.２ ０.２５ ０.３ ０.３５ ０.４ ０.４５
０.０５ ０.１ ０.１５ ０.２ ０.２５ ０.３ ０.３５ ０.４ ０.４５
Average On-State Curren（t A）
Average On-State Curren（t A）
Surge On-State Current Rating
Maximum Transient Thermal
Impedance Characteristics
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ（Non-Repetitive）
１２
１０００
１００
１０
１０
８
６０H Z
５０H Z
６
４
２
０
１
０.００１
１
１０
Time（Cycles）
１００
０.０１
０.１
１
１０
１００
１０００
Time（sec.）
IGT －T［j Change Rate］（Typical）
VGT －T（j Typical）
１０００
１００
１０
１
０.９
０.８
０.７
０.６
０.５
０.４
０.３
０.２
０.１
０
４０
－
４０
－２０
０
２０ ４０ ６０ ８０ １００ １２０ １４０
－
－２０
０
２０ ４０ ６０ ８０ １００ １２０ １４０
Junction Temp（. ℃）
Junction Temp（. ℃）
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