SMG3D60C [SANREX]
THYRISTOR(Through Hole/Non-isolated); 晶闸管（通孔/非隔离）
| 型号： | SMG3D60C |
| 厂家： | 
SANREX CORPORATION |
| 描述： | THYRISTOR(Through Hole/Non-isolated) |
| 文件： | 总3页 (文件大小：466K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
(
)
THYRISTOR Through Hole/Non-isolated
SMG3D60C
(
)
Sensitive Gate
Thyristor SMG3D60C is designed for full wave AC control applications.
TO-251
It can be used as an ON/OFF function or for phase control operation.
6.60ꢀ±0.20
5.34ꢀ±0.30
2.30ꢀ±0.10ꢀ
0.50ꢀ±0.10ꢀ
TC POINT
2
Typical Applications
2
●
Home Appliances : Electric Blankets, Starter for FL, other control applications
●
Industrial Use
: SMPS, Solenoid for Breakers, Motor Controls, Heater
Controls, other control applications
1
3
1.07
0.96ꢀ±0.20
0.76ꢀ±0.20
Features
0.50ꢀ±0.10
●
●
●
●
IT(AV)=3A
2
High Surge Current
Low Voltage Drop
Lead-Free Package
1 K
2 A
3 Gate
1
2
3
2.30ꢀ±0.20
2.30ꢀ±0.20
Unit：mm
Identifying Code：S3D6C
■Maximum Ratings
（Tj=25℃ unless otherwise specified）
Symbol
Item
Reference
Ratings
600
720
600
3
Unit
V
VRRM
VRSM
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S. On-State Current
Surge On-State Current
V
VDRM
IT（AV）
IT（RMS）
ITSM
V
A
Single phase, half wave, 180°, conduction, Tc＝108℃
Single phase, half wave, 180°, conduction, Tc＝108℃
50Hz/60Hz, 1／ cycle Peak value, non-repetitive
4.7
A
A
50 55
/
2
2
2
2
I t
I t
12.5
A S
GM
P
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
0.5
W
W
A
G（AV）
P
0.1
IFGM
VFGM
VRGM
Tj
0.3
6
V
Peak Gate Voltage（Forward）
Peak Gate Voltage（Reverse）
Operating Junction Temperature
Storage Temperature
6
V
－40～＋125
－40～＋150
0.39
℃
℃
g
Tstg
Mass
■Electrical Characteristics
Ratings
Symbol
Item
Reference
Unit
Min.
Typ.
Max.
1
IDRM
IRRM
VTM
IGT
Repetitive Peak Off-State Current
Repetitive Peak Reverse Current
Peak On-State Voltage
Gate Trigger Current
Gate Trigger Voltage
Non-Trigger Gate Voltage
Holding Current
mA
mA
V
Tj＝125℃, VD
＝
VDRM
,
RGK＝220
Ω
Ω
1
Tj＝125℃, VR
＝
VRRM, RGK＝220
1.5
200
0.8
IT＝9A
,
Inst. measurement
1
μA
V
VD＝6
V
, RL＝10Ω
VGT
VGD
IH
1
0.1
V
Tj＝125℃, VD
RGK＝220
Junction to case
＝
／VDRM
,
RGK＝220Ω
2
3.5
mA
Ω
（
）
Rth j-c
Thermal Resistance
3.8
℃ W
/
SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:semi@sanrex.com
SMG3D60C
100On-State Voltage（MAX）
Gate Characteristics
１０
VFGM（６V ）
Ｔｊ=２５℃
Ｔｊ=１２５℃
PGM（0.5W）
１０
PG（AV（）０.1W）
１
０.１
２５℃
１
VG（D ０.1V）
０.１
0.5
０.０１
０.０１
1
1.5
2
2.5
3
3.5
4
０.１
１
１０
１００
１０００
On-State Voltage（V）
Gate Curren（t mA）
Average On-State Current vs Allowable
130 Case Temperature（Single phase half wave）
Average On-State Current vs
5 Power Dissipation（Single phase half wave）
π
０
θ＝180゜
4.5
2π
θ＝150゜
θ＝120゜
θ＝90゜
θ＝60゜
125
θ
4
３
６
０゜
θ：Conduction Angle
3.5
120
115
110
105
100
3
2.5
2
θ＝30゜
1.5
1
π
０
2π
θ
θ＝180゜
θ＝30゜
θ＝60゜ θ＝90゜
θ＝150゜
θ＝120゜
３
６
０゜
0.5
０
θ：Conduction Angle
０
0.5
1
1.5
2
2.5
3
3.5
０
０. 5
1
1 . 5
2
2.5
3
3.5
Average On-State Curren（t A）
Average On-State Curren（t A）
Maximum Transient Thermal
Impedance Characteristics
Surge On-State Current Rating
（Non-Repetitive）
60
50
40
30
20
１０
60HZ
50HZ
10
０
１
０.０１
１
１０
１０0
０.１
１
１０
１００
Time（Cycles）
Time（Sec.）
IGT －Tj Change Rate（Typical）
1VGT －T（j Typical）
１０００
１００
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
１０
１
0.1
0
－５０
－２５
０
２５
５０
７５
１００ １２５
－５０
－２５
０
２５
５０
７５
１００
１２５
Junction Temp.（℃）
Junction Temp（. ℃）
SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:semi@sanrex.com
SMG3D60C
VD －Tj Change Rate（Typical）
150 VR －Tj Change Rate（Typical）
150
140
130
120
110
100
90
140
130
120
110
100
90
80
80
70
70
60
50
60
5－0
－
５０
－２５
０
２５
５０
７５
１００
１２５
５０
－２５
０
２５
５０
７５
１００
１２５
Junction Temp（. ℃）
Junction Temp（. ℃）
SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:semi@sanrex.com
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