SMG5C60 [SANREX]
THYRISTOR(Throgh Hole/Non-isolated); 晶闸管（ Throgh孔/非隔离）
| 型号： | SMG5C60 |
| 厂家： | 
SANREX CORPORATION |
| 描述： | THYRISTOR(Throgh Hole/Non-isolated) |
| 文件： | 总3页 (文件大小：464K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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)
THYRISTOR Through Hole/Non-isolated
SMG5C60
Thyristor SMG5C60 is designed for full wave AC control applications.
TO-220AB
It can be used as an ON/OFF function or for phase control operation.
＋ 0.2
－ 0.1
4.5
10.10＋－ 0.4184
2
1.27 ±0.12
Typical Applications
●
Home Appliances : Electric Blankets, Starter for FL, other control applications
2
1
●
Industrial Use
: SMPS, Solenoid for Breakers, Motor Controls, Heater
Controls, other control applications
3
2.48 ±0.45
＋ 0.15
Features
●
●
●
●
IT(AV)=5A
1.27 ±0.13
2
High Surge Current
Low Voltage Drop
Lead-Free Package
0.85 ±0.1
0.45
－ 0.1
1 K
2 A
3 Gate
2.54
2.54
1
2
3
Unit：mm
Identifying Code：S5C6
■Maximum Ratings
（Tj=25℃ unless otherwise specified）
Symbol
Item
Reference
Ratings
600
720
600
5
Unit
V
VRRM
VRSM
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S. On-State Current
Surge On-State Current
V
VDRM
IT（AV）
IT（RMS）
ITSM
V
A
Single phase, half wave, 180°, conduction, Tc＝103℃
Single phase, half wave, 180°, conduction, Tc＝103℃
50Hz/60Hz, 1／ cycle Peak value, non-repetitive
7.8
A
A
80 88
/
2
2
2
2
I t
I t
32
A S
GM
P
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
5
W
W
A
G（AV）
P
0.5
IFGM
VFGM
VRGM
Tj
2
6
10
V
Peak Gate Voltage（Forward）
Peak Gate Voltage（Reverse）
Operating Junction Temperature
Storage Temperature
V
－40～＋125
－40～＋150
2
℃
℃
g
Tstg
Mass
■Electrical Characteristics
Ratings
Symbol
Item
Reference
Unit
Min.
Typ.
Max.
2
IDRM
IRRM
VTM
IGT
Repetitive Peak Off-State Current
Repetitive Peak Reverse Current
Peak On-State Voltage
Gate Trigger Current
Gate Trigger Voltage
Non-Trigger Gate Voltage
Holding Current
mA
mA
V
Tj＝125℃, VD
＝
VDRM
2
Tj＝125℃, VR
＝
VRRM
1.5
10
1.4
IT＝15
VD＝6
Tj＝125℃, VD
A, Inst. measurement
mA
V
V, RL＝10Ω
VGT
VGD
IH
1
0.2
V
＝
／VDRM
2
15
mA
（
）
Rth j-c
Thermal Resistance
Junction to case
3
℃ W
/
SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:semi@sanrex.com
SMG5C60
On-State Voltage Maxꢀ
Gate Characteristics
１００
１０
Ｔｊ=２５℃
Ｔｊ=１２５℃
VFGM（６V ）
PGM（５W ）
PG（AV（）０.５W ）
１０
１
２５℃
VG（D ０.２V ）
１
０.５
０.１
１
１
１.５
２
２.５
３
１０
１００
Gate Curren（t mA）
１０００
１００００
On-State Voltage（V）
Average On-State Current vs Power
Dissipation（Single phase half wave）
Average On-State Current vs Ambient
Temperature（Single phase half wave）
８
７
６
５
４
３
２
１３０
１２５
１２０
１１５
１１０
１０５
１００
θ
＝
１８０゜
π
０
2π
θ
３
θ
＝
１２０゜
６０゜
θ
：Conduction Angle
θ
＝
９０゜
θ
＝
６０゜
θ
＝
３０゜
π
０
2π
θ
３
θ
＝
３０゜
θ
＝
６０゜
θ
＝
９０゜ θ
＝
１２０゜
θ
＝
１８０゜
６
０゜
θ
：Conduction Angle
１
０
９５
９０
０
１
２
３
４
５
６
０
１
２
３
４
５
６
Average On-State Curren（t A）
Average On-State Curren（t A）
Maximum Transient Thermal
Impedance Characteristics
Surge On-State Current Rating（Non-Repetitive）
１００
９０
８０
７０
６０
５０
４０
３０
２０
１０
６０H z
５０H z
１０
０
１
０.０１
１
１０
１００
０.１
１
１０
１００
Time（Cycles）
Time（Sec.）
IGT －T［j Change Rate］（Typical）
VGT －T（j Typical）
１０００
１００
１０
１
０.９
０.８
０.７
０.６
０.５
０.４
０.３
０.２
０.１
０
５０
－
５０
－２５
０
２５
５０
７５
１００ １２５
－
－２５
０
２５
５０
７５
１００ １２５
Junction Temp（. ℃）
Junction Temp（. ℃）
SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:semi@sanrex.com
SMG5C60
VR －Tj Change Rate（Typical）
150 VD －Tj Change Rate（Typical）
150
140
130
120
110
100
90
140
130
120
110
100
90
80
80
70
70
60
60
50
50
－
５０
－２５
０
２５
５０
７５
１００
１２５
－
５０
－２５
０
２５
５０
７５
１００
１２５
Junction Temp（. ℃）
Junction Temp（. ℃）
SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:semi@sanrex.com
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