2SK4125 [SANYO]
N-Channel Silicon MOSFET General-Purpose Switching Device; N沟道MOSFET硅通用开关设备
| 型号： | 2SK4125 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | N-Channel Silicon MOSFET General-Purpose Switching Device |
| 文件： | 总5页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA0747
SANYO Sem iconductors
DATA S HEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
2SK4125
Features
• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
•
Adoption of high reliability HVP process.
•
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Symbol
Conditions
Ratings
Unit
V
V
600
±30
17
DSS
GSS
Gate-to-Source Voltage
Drain Current (DC)
V
V
I
A
D
Drain Current (Pulse)
I
PW≤10µs, duty cycle≤1%
52
A
DP
2.5
170
150
W
W
°C
°C
mJ
A
Allowable Power Dissipation
P
D
Tc=25°C (SANYO’s ideal heat dissipation condition)
Channel Temperature
Tch
Storage Temperature
Tstg
--55 to +150
86.5
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
E
AS
I
17
AV
*1 V =99V, L=500µH, I =17A
DD
AV
*2 L≤500µH, single pulse
Marking : K4125
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
's products or
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51607QB TI IM TC-00000701 No. A0747-1/5
2SK4125
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
600
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=10mA, V =0V
V
µA
nA
V
(BR)DSS
D
GS
=480V, V =0V
I
V
V
V
V
100
DSS
DS
GS
DS
DS
GS
I
=±30V, V =0V
DS
±100
GSS
V
(off)
GS
=10V, I =1mA
3
5
D
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
yfs
=10V, I =8.5A
4.5
9
S
D
R
DS
(on)
I
=7A, V =10V
0.47
1200
220
50
0.61
Ω
D GS
Ciss
Coss
Crss
V
V
V
=30V, f=1MHz
=30V, f=1MHz
=30V, f=1MHz
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
DS
DS
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
t (on)
d
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
26.5
82
Rise Time
t
r
Turn-OFF Delay Time
t (off)
d
145
52
Fall Time
t
f
Total Gate Charge
Qg
Qgs
Qgd
V
V
V
=200V, V =10V, I =17A
GS
46
DS
DS
DS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
=200V, V =10V, I =17A
GS
8.3
D
=200V, V =10V, I =17A
GS
26.7
1.0
D
V
SD
I =17A, V =0V
GS
1.3
S
Package Dimensions
unit : mm (typ)
7503-004
4.8
15.6
14.0
3.2
2.0
1.6
1.0
2.0
0.6
1
2
3
1 : Gate
0.6
2 : Drain
3 : Source
5.45
5.45
SANYO : TO-3PB
Switching Time Test Circuit
Avalanche Resistance Test Circuit
V
V
=200V
IN
DD
L
10V
0V
≥50Ω
RG
I
=8.5A
D
V
R =23.5Ω
IN
L
D
V
OUT
2SK4125
PW=10µs
D.C.≤0.5%
10V
0V
V
50Ω
DD
G
2SK4125
P. G
S
R
=50Ω
GS
No. A0747-2/5
2SK4125
I
-- V
I
-- V
D
DS
D
GS
40
35
30
25
20
15
10
35
30
25
20
15
10
V =20V
DS
Tc=25°C
Tc= --25°C
25°C
75°C
6V
5
0
5
0
V
=5V
GS
0
5
10
15
20
25
30
IT11753
0
2
4
6
8
10
12
14
16
18
20
Drain-to-Source Voltage, V
-- V
Gate-to-Source Voltage, V -- V
GS
IT11754
DS
R
(on) -- V
R
(on) -- Tc
DS
GS
DS
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.4
1.2
1.0
0.8
0.6
0.4
I =7A
D
Tc=75°C
25°C
--25°C
0.2
0
0.2
0
3
5
7
9
11
13
15
IT11755
--50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, V
-- V
Case Temperature, Tc -- °C
IT11756
GS
yfs -- I
D
I
-- V
S
SD
3
2
5
V =10V
DS
V =0V
GS
3
2
10
7
10
7
5
3
2
5
1.0
7
5
3
2
3
2
0.1
7
5
1.0
7
3
2
5
3
0.1
0.01
0.2
2
3
5
7
2
3
5
7
2
3
5
0.4
0.6
0.8
1.0
1.2
1.4
IT11758
1.0
10
Drain Current, I -- A
IT11757
Diode Forward Voltage, V
SD
-- V
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
1000
10000
f=1MHz
V
=200V
=10V
7
5
DD
7
V
GS
5
3
2
3
2
Ciss
1000
7
5
100
3
2
7
5
100
7
5
t (on)
d
3
2
3
2
10
0.1
10
0
5
10
15
20
25
30
35
40
45
50
2
3
5
7
2
3
5
7
2
3
5
1.0
10
Drain Current, I -- A
IT11760
IT11759
Drain-to-Source Voltage, V
-- V
D
DS
No. A0747-3/5
2SK4125
V
-- Qg
A S O
GS
10
9
100
7
5
V
=200V
=17A
I
=52A
PW≤10µs
DS
DP
I
D
3
2
8
I
=17A
D
7
10
7
5
6
5
3
2
4
Operation in
this area is
1.0
7
5
3
limited by R (on).
DS
2
3
2
1
0
Tc=25°C
Single pulse
0.1
0.1
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
1000
IT12239
0
0
0
10
20
30
40
50
IT12416
1.0
10
100
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, V -- V
DS
P
-- Ta
P
-- Tc
D
D
200
3.0
2.5
2.0
1.5
1.0
180
170
160
140
120
100
80
60
40
0.5
0
20
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
IT12240
IT12241
Ambient Temperature, Ta -- °C
Case Temperature, Tc -- °C
E
-- Ta
AS
120
100
80
60
40
20
0
25
50
75
100
125
150
175
IT10478
Ambient Temperature, Ta -- °C
No. A0747-4/5
2SK4125
Note on usage : Since the 2SK4125 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of May, 2007. Specifications and information herein are subject
to change without notice.
PS
No. A0747-5/5
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