5HP01SP [SANYO]
5HP01SP;
| 型号： | 5HP01SP |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | 5HP01SP |
| 文件： | 总4页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENN6683
P-Channel Silicon MOSFET
5HP01S
UltrahighSpeedSwitching
Applications
Features
Package Dimensions
unit : mm
•
Low ON-resistance .
• Ultrahigh-speed switching.
• 4V drive.
2192
[5HP01S]
0.75
0.6
0.3
3
0 to 0.1
1
2
0.2
0.1
0.5 0.5
1.6
1 : Gate
2 : Source
3 : Drain
Specifications
SANYO : SMCP
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source V oltage
Gate-to-Source V oltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
DSS
-50
±20
V
V
V
GSS
I
-0.07
-0.28
0.15
150
A
D
Drain Current (Pulse)
I
PW≤10µs, dutycycle ≤1%
A
DP
AllowablePowerDissipation
Channel Temperature
Storage Temperature
P
W
°C
°C
D
Tch
Tstg
-55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
--50
max
Drain-to-SourceBreakdownV oltage
Zero-Gate V oltage Drain Current
Gate-to-Sourse Leakage Current
Cutoff Voltage
V
I
=-1mA, V
=0
V
µA
µA
V
(BR)DSS
D
GS
=-50V, V
I
V
V
V
V
=0
-10
DSS
GSS
DS
GS
DS
DS
GS
=±16V, V =0
I
±10
DS
=-10V, I =-100µA
V
(off)
--1
50
--2.5
GS
D
Forward Transfer Admittance
| yfs |
=--10V, I =--40mA
70
17
23
mS
Ω
D
R
DS
(on)1
I
D
=-40mA, V
=-10V
= -4V
22
32
GS
GS
Static Drain-to-Source On-State Resistance
R
DS
(on)2
I =-20mA, V
D
Ω
Continued on ne xt page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Sem iconductor Com pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12201 TS IM TA-3123 No.6683-1/4
5HP01S
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
InputCapacitance
OutputCapacitance
Reverse TransferCapacitance
Turn-ON Delay Time
Rise Time
Ciss
Coss
Crss
V
V
V
=-10V, f=1MHz
=-10V, f=1MHz
=-10V, f=1MHz
6.2
pF
pF
pF
ns
DS
DS
DS
4.0
1.3
t (on)
d
Seespecified TestCircuit
Seespecified TestCircuit
Seespecified TestCircuit
Seespecified TestCircuit
13
t
r
10
ns
Turn-OFF Delay Time
Fall Time
t (off)
d
100
150
1.32
0.17
0.34
-0.85
ns
t
f
ns
Total Gate Charge
Qg
Qgs
Qgd
V
V
V
=-10V, V
DS
=-10V, V
DS
=-10V, V
DS
=-10V, I =-70mA
nC
nC
nC
V
GS
GS
GS
D
Gate-to-Source Charge
Gate-to-Drain“Miller”Charge
Diode Forward V oltage
Marking : XC
=-10V, I =-70mA
D
=-10V, I =-70mA
D
V
SD
I
S
=-70mA, V =0
GS
-1.2
Switching Time Test Circuit
V
= --25V
DD
V
IN
0V
--10V
I
= --40mA
L
D
V
R =625Ω
IN
PW=10µs
D.C.≤1%
D
V
OUT
G
5HP01S
P. G
50Ω
S
I
-- V
I
-- V
D GS
D
DS
--0.14
--0.12
--0.10
--0.08
--0.06
--0.04
--0.07
--0.06
--0.05
--0.04
--0.03
--0.02
V
= --10V
DS
--3.0V
--0.02
0
--0.01
0
V
= --2.5V
GS
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
0
--1
--2
--3
--4
--5
--6
IT00104
Drain-to-Source Voltage, V
-- V
Gate-to-Source Voltage, V
GS
-- V
IT00103
DS
R
DS
(on) -- V
R (on) -- I
DS D
GS
100
7
50
45
40
Ta=25°C
V
= --10V
GS
5
35
30
25
20
3
2
--40mA
Ta=75°C
25°C
I = --20mA
D
15
10
--25°C
10
2
3
5
7
2
3
--2
--3
--4
--5
--6
--7
--8
--9
--10
--0.01
--0.1
Gate-to-Source Voltage, V
GS
-- V
IT00105
Drain Current, I -- A
IT00106
D
No.6683-2/4
5HP01S
R
DS
(on) -- I
R
DS
(on) -- Ta
D
1000
40
35
30
25
20
V
= --4V
GS
7
5
3
2
100
7
5
15
10
Ta=75°C
25°C
3
2
5
0
10
--0.01
2
3
5
7
2
3
--60 --40 --20
0
20
40
60
80 100 120 140 160
--0.1
IT00107
Ambient Temperature, Ta -- °C
IT00108
Drain Current, I -- A
D
y
fs -- I
I
-- V
F SD
D
1.0
3
2
V
= 0
V
= --10V
GS
DS
7
5
3
2
--0.1
7
5
0.1
7
5
25°C
3
2
3
2
0.01
--0.01
--0.01
--0.5
2
3
5
7
2
3
--0.6
--0.7
--0.8
--0.9
--1.0
--1.1
--1.2
--0.1
IT00109
Diode Forward Voltage, V
-- V
IT00110
Drain Current, I -- A
D
SW Time -- I
Ciss, Coss, CrssSD-- V
D
DS
100
1000
f=1MHz
V
V
= --25V
= --10V
7
5
7
5
DD
GS
t
3
2
3
2
f
100
7
5
10
7
5
t (off)
d
Ciss
Coss
3
2
3
2
t (on)
d
Crss
10
7
5
1.0
7
5
t
r
3
2
3
2
1.0
--0.01
0.1
2
3
5
7
0
--5
--10 --15 --20 --25 --30 --35 --40 --45 --50
--0.1
IT00111
Drain-to-Source Voltage, V
-- V
DS
IT00112
Drain Current, I -- A
D
V
-- Qg
P
-- Ta
D
GS
--10
0.20
0.15
0.10
V
= --10V
DS
--9
--8
--7
I = --0.07A
D
--6
--5
--4
--3
--2
0.05
0
--1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
120
140
160
IT00113
IT02381
Total Gate Charge, Qg -- nC
Ambient Temperature, Ta -- °C
No.6683-3/4
5HP01S
Note on usa ge : Since the 5HP01S is designed f or high-speed s witching applica tions, please a void using
this device in the vicinity of highl y charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2001. Specifications and information herein are subject
to change without notice.
PS No.6683-4/4
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