6HP04MH [SANYO]

P-Channel Silicon MOSFET General-Purpose Switching Device; P沟道MOSFET硅通用开关设备
6HP04MH
型号: 6HP04MH
厂家: SANYO SEMICON DEVICE    SANYO SEMICON DEVICE
描述:

P-Channel Silicon MOSFET General-Purpose Switching Device
P沟道MOSFET硅通用开关设备

开关 通用开关
文件: 总4页 (文件大小:37K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Ordering number : ENA0368  
SANYO Sem iconductors  
DATA S HEET  
P-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
6HP04MH  
Features  
4V drive.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
--60  
±20  
DSS  
GSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
I
--120  
--480  
0.6  
mA  
mA  
W
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
PW10µs, duty cycle1%  
Mounted on a ceramic board (900mm20.8mm)  
DP  
P
D
Tch  
150  
°C  
°C  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
--60  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=--1mA, V =0V  
V
µA  
µA  
V
(BR)DSS  
D GS  
I
V
V
V
V
=--60V, V =0V  
GS  
--1  
±10  
--2.6  
DSS  
DS  
GS  
DS  
DS  
I
=±16V, V =0V  
DS  
GSS  
V (off)  
GS  
=--10V, I =--100µA  
--1.2  
100  
D
Forward Transfer Admittance  
yfs  
=--10V, I =--60mA  
180  
5.1  
mS  
D
R
DS  
(on)1  
I
D
I
D
=--60mA, V =--10V  
GS  
6.6  
9.6  
Static Drain-to-Source On-State Resistance  
R
DS  
(on)2  
=--30mA, V =--4V  
GS  
6.8  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
Ciss  
V
V
V
=--20V, f=1MHz  
=--20V, f=1MHz  
=--20V, f=1MHz  
13.5  
3.4  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
DS  
DS  
DS  
Coss  
Crss  
1.3  
t (on)  
d
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
36.5  
38.0  
455  
160  
t
r
Turn-OFF Delay Time  
Fall Time  
t (off)  
d
t
f
Marking : QB  
Continued on next page.  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
70306 / 51506PE MS IM TB-00002267  
No. A0368-1/4  
6HP04MH  
Continued from preceding page.  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Total Gate Charge  
Qg  
Qgs  
Qgd  
V
V
V
=--30V, V =--10V, I =--120mA  
1.6  
nC  
nC  
nC  
V
DS  
DS  
DS  
GS  
D
Gate-to-Source Charge  
Gate-to-Drain “Miller” Charge  
Diode Forward Voltage  
=--30V, V =--10V, I =--120mA  
0.4  
0.16  
GS  
D
=--30V, V =--10V, I =--120mA  
GS  
D
V
SD  
I =--120mA, V =0V  
S GS  
--0.85  
--1.2  
Package Dimensions  
unit : mm  
Switching Time Test Circuit  
7019A-003  
V
= --30V  
DD  
V
IN  
0V  
--10V  
0.15  
2.0  
3
I
= --60mA  
D
V
IN  
R =500Ω  
L
0 to 0.02  
D
V
OUT  
PW=10µs  
D.C.1%  
R
g
1
2
G
0.65  
0.3  
6HP04MH  
P. G  
50Ω  
S
1 : Gate  
2 : Source  
3 : Drain  
R =5kΩ  
g
SANYO : MCPH3  
I
-- V  
I
-- V  
D GS  
D
DS  
--120  
--100  
--80  
--120  
--100  
--80  
V
= --10V  
DS  
--60  
--60  
--40  
--40  
--20  
0
--20  
0
0
--0.2  
--0.4  
--0.6  
--0.8  
--1.0  
IT10865  
0
--0.5  
--1.0  
--1.5  
--2.0  
--2.5  
--3.0  
Gate-to-Source Voltage, V -- V  
IT10866  
GS  
--3.5  
Drain-to-Source Voltage, V  
-- V  
DS  
R
DS  
(on) -- V  
R
DS  
(on) -- Ta  
GS  
14  
12  
10  
8
14  
12  
10  
8
Ta=25°C  
--60mA  
6
6
I = --30mA  
D
4
4
2
0
2
0
0
--2  
--4  
--6  
--8  
--10 --12 --14 --16 --18 --20  
IT10867  
--60 --40 --20  
0
20  
40  
60  
80 100 120 140 160  
Gate-to-Source Voltage, V  
GS  
-- V  
Ambient Temperature, Ta -- °C  
IT10868  
No. A0368-2/4  
6HP04MH  
yfs -- I  
I
-- V  
SD  
D
S
7
5
--1000  
7
V
=0V  
V
= --10V  
GS  
DS  
5
3
2
3
2
--100  
7
5
3
2
100  
--10  
7
5
7
5
3
2
3
2
--1.0  
7
5
3
2
10  
--1.0  
--0.1  
--0.2  
2
3
5
7
2
3
5
7
2
3
5 7  
--0.4  
--0.6  
--0.8  
--1.0  
--1.2  
--1.4  
IT10870  
--10  
--100  
Drain Current, I -- mA  
IT10869  
Diode Forward Voltage, V -- V  
SD  
D
SW Time -- I  
Ciss, Coss, Crss -- V  
D
DS  
1000  
3
2
V
V
= --30V  
= --10V  
f=1MHz  
DD  
GS  
7
5
Ciss  
10  
3
2
7
5
t
f
100  
3
2
7
5
t
d(on)  
3
1.0  
2
7
2
3
5
7
2
3
5
7
0
--5  
--10  
--15  
--20  
--25  
--30  
IT10872  
--0.01  
--0.1  
Drain Current, I -- A  
IT10871  
Drain-to-Source Voltage, V  
-- V  
D
DS  
A S O  
V
-- Qg  
GS  
--10  
7
5
I
= --480mA  
V
= --30V  
PW10µs  
DP  
DS  
--9  
--8  
--7  
--6  
--5  
--4  
--3  
--2  
I = --120mA  
D
3
2
I = --120mA  
D
--0.1  
7
5
Operation in this area  
is limited by R (on).  
3
2
DS  
Ta=25°C  
Single pulse  
Mounted on a ceramic board (900mm20.8mm)  
--1  
0
--0.01  
--0.1  
2
3
5
7
2
3
5
7
2
3
5 7  
--100  
IT10874  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
--1.0  
--10  
Total Gate Charge, Qg -- nC  
IT10873  
Drain-to-Source Voltage, V  
DS  
-- V  
P
-- Ta  
D
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature, Ta -- °C  
IT10875  
No. A0368-3/4  
6HP04MH  
Note on usage : Since the 6HP04MH is a MOSFET product, please avoid using this device in the vicinity  
of highly charged objects.  
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state,  
and are not guarantees of the performance, characteristics, and functions of the described products  
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be  
evaluated in an independent device, the customer should always evaluate and test devices mounted  
in the customer's products or equipment.  
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any  
and all semiconductor products fail with some probability. It is possible that these probabilistic failures  
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or  
fire, or that could cause damage to other property. When designing equipment, adopt safety measures  
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to  
protective circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO Semiconductor products (including technical data,services) described  
or contained herein are controlled under any of applicable local export control laws and regulations, such  
products must not be exported without obtaining the export license from the authorities concerned in  
accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic  
or mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"  
for the SANYO Semiconductor product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not  
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate  
and reliable, but no guarantees are made or implied regarding its use or any infringements of  
intellectual property rights or other rights of third parties.  
This catalog provides information as of May, 2006. Specifications and information herein are subject  
to change without notice.  
PS No. A0368-4/4  

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