ATP202 [SANYO]
N-Channel Silicon MOSFET General-Purpose Switching Device Applications; N沟道MOSFET硅通用开关设备的应用
| 型号： | ATP202 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 文件： | 总4页 (文件大小：256K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1318
SANYO Sem iconductors
DATA S HEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
ATP203
Features
•
Low ON-resistance.
•
Large current.
•
Slim package.
•
4.5V drive.
•
Halogen free compliance.
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
30
±20
75
DSS
V
V
GSS
I
A
D
Drain Current (PW 10 s)
I
PW 10 s, duty cycle 1%
225
50
A
≤
μ
≤
μ
≤
DP
Allowable Power Dissipation
Channel Temperature
P
Tc=25 C
W
°
D
Tch
150
C
C
°
Storage Temperature
Tstg
--55 to +150
°
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
E
52
38
mJ
A
AS
I
AV
Note : 1 V =10V, L=50 H, I =38A
*
μ
DD
2 L 50 H, Single pulse
AV
*
≤
μ
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
V
I
=1mA, V =0V
D GS
30
V
(BR)DSS
I
I
V
=30V, V =0V
GS
1
μA
μA
DSS
DS
V
=±16V, V =0V
GS DS
±10
GSS
Marking : ATP203
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
www.semiconductor-sanyo.com/network
No. A1318-1/4
91708PA TI IM TC-00001570
ATP203
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
=10V, I =1mA
Unit
min
1.2
13
max
2.6
Cutoff Voltage
V
(off)
GS
V
V
V
S
DS
D
Forward Transfer Admittance
| yfs |
=10V, I =38A
22
DS
D
R
R
(on)1
(on)2
I
I
=38A, V =10V
GS
6.3
9.5
8.2
mΩ
mΩ
pF
pF
pF
ns
DS
D
D
Static Drain-to-Source On-State Resistance
=19A, V =4.5V
GS
13.5
DS
Input Capacitance
Ciss
V
=10V, f=1MHz
=10V, f=1MHz
=10V, f=1MHz
2750
450
265
24
DS
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
DS
V
DS
t
t
t
t
(on)
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
d
r
420
130
75
ns
Turn-OFF Delay Time
Fall Time
(off)
ns
d
f
ns
Total Gate Charge
Qg
V
=15V, V =10V, I =75A
GS
44
nC
nC
nC
V
DS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
DS
=15V, V =10V, I =75A
GS
14
D
V
DS
=15V, V =10V, I =75A
GS
5.6
D
V
SD
I =75A, V =0V
S GS
1.02
1.2
Package Dimensions
unit : mm (typ)
7057-001
1.5
6.5
4.6
2.6
0.4
0.4
4
2
0.55
1
3
0.8
0.6
1 : Gate
2 : Drain
0.4
2.3
2.3
3 : Source
4 : Drain
SANYO : ATPAK
Switching Time Test Circuit
V
IN
V =15V
DD
10V
0V
I
=38A
D
V
IN
R =0.39Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
ATP203
P. G
50Ω
S
No. A1318-2/4
ATP203
I
-- V
DS
I
-- V
D
D GS
75
70
65
60
55
50
45
40
35
30
25
20
15
10
100
90
80
70
60
50
40
30
20
V
DS
=10V
Tc=25°C
V
=3.5
V
GS
10
0
5
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Drain-to-Source Voltage, V
-- V
IT14000
Gate-to-Source Voltage, V -- V
GS
IT14001
DS
R
(on) -- V
R
(on) -- Tc
DS
GS
DS
25
20
15
10
25
20
15
10
Tc=25°C
Single pulse
Single pulse
I
=19A
D
38A
5
0
5
0
0
2
4
6
8
10
12
14
16
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
-- V
Case Temperature, Tc -- °C
IT14003
IT14002
GS
| yfs | -- I
I
-- V
D
S SD
7
5
100
7
5
V
=0V
V
=10V
GS
DS
Single pulse
3
2
3
2
10
7
5
3
2
10
7
1.0
7
5
3
2
5
3
2
0.1
7
5
3
2
1.0
7
0.01
7
5
3
2
5
0.001
3
0.1
2
3
5
7
2
3
5
7
2
3
5
7
0
0.2
0.4
0.6
0.8
1.0
1.2
IT14005
1.0
10
100
IT14004
Diode Forward Voltage, V
SD
-- V
Drain Current, I -- A
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
7
5
1000
f=1MHz
V
V
=20V
=10V
DD
GS
7
5
3
2
3
2
1000
7
5
100
t
f
7
5
3
2
3
2
t (on)
d
100
7
10
0.1
0
5
10
15
20
25
30
IT14007
2
3
5
7
2
3
5
7
2
3
5
7
1.0
10
100
IT14006
Drain Current, I -- A
Drain-to-Source Voltage, V
DS
-- V
D
No. A1318-3/4
ATP203
A S O
V
GS
-- Qg
5
10
9
V
=15V
I
=225A
DS
=75A
3
2
PW≤10μs
DP
I
D
I =75A
D
100
7
5
8
7
3
2
6
10
7
5
5
Operation in this area
4
3
2
is limited by R (on).
DS
3
1.0
7
5
2
3
2
Tc=25°C
Single pulse
1
0
0.1
0
5
10
15
20
25
30
35
40
45
2
3
5
7
2
3
5
7
2
3
5
7
0.1
1.0
10
Total Gate Charge, Qg -- nC
IT14008
Drain-to-Source Voltage, V
-- V
IT14009
DS
P
-- Tc
E
-- Ta
D
AS
120
100
80
60
50
40
30
20
60
40
10
0
20
0
0
25
50
75
100
125
150
175
IT14011
0
20
40
60
80
100
120
140
160
Case Temperature, Tc -- °C
IT14010
Ambient Temperature, Ta -- °C
Note on usage : Since the ATP203 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
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otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of September, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1318-4/4
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