CPH3247 [SANYO]
NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications; NPN外延平面硅晶体管大电流开关应用
| 型号： | CPH3247 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications |
| 文件： | 总4页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA0400
SANYO Sem iconductors
DATA S HEET
NPN Epitaxial Planar Silicon Transistor
CPH3247
High-Current Switching Applications
Applications
•
DC / DC converters, relay drivers, lamp drivers, motor drivers, inverters.
Features
•
•
•
Adoption of FBET, MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
• High-speed switching.
• Ultrasmall package permitting applied sets to be small and slim (mounting height: 0.9mm).
• High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
120
120
80
CBO
V
V
CES
CEO
EBO
V
V
V
6.5
2.5
4
V
I
A
C
Collector Current (Pulse)
Base Current
I
A
CP
I
B
500
0.9
150
mA
W
°C
°C
Collector Dissipation
P
Mounted on a ceramic board (600mm2✕0.8mm)
C
Junction Temperature
Storage Temperature
Tj
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Collector Cutoff Current
Symbol
Conditions
Unit
min
max
I
V
CB
V
EB
V
CE
V
CE
V
CB
=70V, I =0A
1
µA
µA
CBO
E
Emitter Cutoff Current
DC Current Gain
I
=4V, I =0A
1
EBO
C
h
FE
=5V, I =100mA
300
600
C
Gain-Bandwidth Product
Output Capacitance
Marking : DS
f
=10V, I =500mA
C
350
14
MHz
pF
T
Cob
=10V, f=1MHz
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82306 / 60506EA MS IM TB-00002342 No. A0400-1/4
CPH3247
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
135
V
V
(sat)1
(sat)2
I
I
I
I
I
I
=1A, I =50mA
90
mV
mV
V
CE
C
C
C
C
C
C
B
Collector-to-Emitter Saturation Voltage
=1A, I =100mA
80
120
1.2
CE
B
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
V
(sat)
=1A, I =100mA
0.84
BE
B
V
=10µA, I =0A
120
V
(BR)CBO
E
V
=100µA, R =0Ω
BE
120
80
V
(BR)CES
(BR)CEO
(BR)EBO
V
V
=1mA, R =∞
BE
V
I =10µA, I =0A
E
6.5
V
C
t
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
40
920
32
ns
ns
ns
on
t
Storage Time
stg
Fall Time
t
f
Package Dimensions
unit : mm
Switching Time Test Circuit
7015A-003
I
B1
PW=20µs
D.C.≤1%
OUTPUT
I
2.9
3
0.15
0.05
B2
V
10
R
INPUT
R
B
R
L
50Ω
+
+
100µF
470µF
1
2
0.95
1 : Base
0.4
V
= --5V
V
=40V
CC
BE
2 : Emitter
3 : Collector
10I = --10I =I =0.5A
B1 B2
C
SANYO : CPH3
I
-- V
I
-- V
C
CE
C
BE
2.0
1.6
1.2
0.8
2.0
V
=5V
CE
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.4
0
0.2
0
I =0mA
B
0
0.2
0.4
0.6
0.8
1.0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base-to-Emitter Voltage, V
BE
-- V
Collector-to-Emitter Voltage, V
CE
-- V IT11004
IT11005
No. A0400-2/4
CPH3247
h
FE
-- I
V (sat) -- I
CE C
C
1000
3
2
V =5V
CE
I / I =10
C B
7
25°C
--25°C
5
0.1
7
5
3
2
3
2
0.01
100
7
5
7
5
3
2
3
5
7
2
3
5
7
1.0
2
3
5
2
3
5
7
2
3
5
7
1.0
2
3
5
0.01
0.1
0.01
0.1
Collector Current, I -- A
IT11006
Collector Current, I -- A
IT11007
C
C
V
CE
(sat) -- I
V
BE
(sat) -- I
C
C
5
3
2
I
C
/ I =20
B
I
C
/ I =10
B
3
2
0.1
7
5
1.0
7
5
3
2
0.01
7
3
2
3
5
7
2
3
5
7
2
3
5
2
3
5
7
2
3
5
7
1.0
2
3
5
0.01
0.1
1.0
0.01
0.1
Collector Current, I -- A
IT11008
Collector Current, I -- A
IT11009
C
C
f
T
-- I
Cob -- V
C
CB
7
5
7
5
V =10V
CE
f=1MHz
3
2
3
2
100
10
7
5
7
5
3
3
0.1
2
0.01
2
3
5
7
2
3
5
7
2
3
2
3
5
7
2
3
5
7
2
3
5 7
0.1
1.0
1.0
10
100
IT11011
Collector Current, I -- A
C
Collector-to-Base Voltage, V -- V
CB
IT11010
P
-- Ta
A S O
C
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
7
5
I
=4A
<10µs
CP
3
2
I =2.5A
C
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
Ta=25°C
Single pulse
3
2
0.1
0
Mounted on a ceramic board (600mm2✕0.8mm)
0.001
0.1
2
3
5
7
2
3
5
7
2
3
5
7
0
20
40
60
80
100
120
140
160
1.0
10
100
IT11012
Collector-to-Emitter Voltage, V
CE
-- V
Ambient Temperature, Ta -- °C
IT11003
No. A0400-3/4
CPH3247
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
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This catalog provides information as of June, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0400-4/4
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