CPH5905G-TL-E [SANYO]
High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifi er Applications; 高频放大器。 AM放大器。低频功率放大器的应用ER
| 型号： | CPH5905G-TL-E |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifi er Applications |
| 文件： | 总8页 (文件大小：534K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN7177B
SANYO Sem iconductors
DATA S HEET
TR : NPN Epitaxial Planar Silicon Transistor
FET : N-Channel Silicon Junction FET
CPH5905
High-Frequency Amplifier. AM Amplifier.
Low-Frequency Amplifier Applications
Features
•
Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting
efficiency greatly
•
•
The CPH5905 contains a 2SK3357-equivalent chip and a 2SC4639-equivalent chip in one package
Drain and emitter are shared
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Symbol
Conditions
Ratings
Unit
[FET]
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
V
15
--15
10
V
V
DSX
V
GDS
I
G
mA
mA
mW
Drain Current
I
D
50
Allowable Power Dissipation
[TR]
P
Mounted on a ceramic board (600mm2 0.8mm)
350
×
D
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
V
55
50
V
V
CBO
V
CEO
V
EBO
6
V
I
C
150
300
30
mA
mA
mA
mW
Collector Current (Pulse)
Base Current
I
CP
I
B
Collector Dissipation
[TR]
P
Mounted on a ceramic board (600mm2 0.8mm)
350
×
C
Total Power Dissipation
Junction Temperature
Storage Temperature
P
Mounted on a ceramic board (600mm2 0.8mm)
500
150
mW
×
T
Tj
C
C
°
°
Tstg
--55 to +150
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: CPH5
7017A-007
• JEITA, JEDEC
: SC-74A, SOT-25
• Minimum Packing Quantity : 3,000 pcs./reel
CPH5905G-TL-E
CPH5905H-TL-E
0.15
2.9
Packing Type : TL
Marking
5
4
3
2
0.05
TL
1
1 : Collector
2 : Gate
0.95
0.4
Electrical Connection
3 : Source
4 : Emitter/Drain
5 : Base
5
4
3
SANYO : CPH5
1
2
http://semicon.sanyo.com/en/network
60612 TKIM/62005AC MSIM TB-00001552/22802 TSIM TA-49
No.7177-1/8
CPH5905
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
[FET]
Gate-to-Drain Breakdown Voltage
Gate Cutoff Current
Cutoff Voltage
V
I
=--10 A, V =0V
--15
V
nA
V
μ
(BR)GDS
G
GS
I
V
=--10V, V =0V
--1.0
GSS
(off)
GS
DS
=5V, I =100
V
V
A
μ
--0.4
10.0*
24
--0.7
--1.5
GS
DS
D
Drain Current
I
V
=5V, V =0V
DS GS
32.0*
mA
mS
pF
pF
dB
DSS
yfs
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Noise Figure
V
=5V, V =0V, f=1kHz
GS
35
10.0
2.9
|
|
DS
Ciss
Crss
NF
V
=5V, V =0V, f=1kHz
GS
DS
V
=5V, V =0V, f=1kHzz
GS
DS
V
=5V, Rg=1k , I =1mA, f=1kHz
1.0
Ω
DS
D
[TR]
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
I
V
=35V, I =0A
0.1
0.1
A
A
μ
CBO
CB
V =4V, I =0A
EB
E
I
μ
EBO
C
h
V
CE
=6V, I =1mA
135
400
FE
C
Gain-Bandwidth Product
Output Capacitance
f
V
=6V, I =10mA
200
1.7
MHz
pF
mV
V
T
CE C
Cob
V
CB
=6V, f=1MHz
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
V
(sat)
(sat)
I
C
=50mA, I =5mA
0.08
0.8
0.4
CE
B
V
I
C
=50mA, I =5mA
1.0
BE
B
V
I
C
=10 A, I =0A
55
50
6
V
μ
(BR)CBO
E
V
I
C
=1mA, R
=
V
∞
(BR)CEO
BE
V
I =10 A, I =0A
E
V
μ
(BR)EBO
C
t
t
t
0.15
0.75
0.20
ns
on
Storage Time
See specified Test Circuit.
ns
stg
f
Fall Time
ns
: The CPH5905 is classified by I
as follows : (unit : mA)
*
DSS
Rank
G
H
I
10.0 to 20.0
16.0 to 32.0
DSS
The specifications shown above are for each individual FET or transistor.
Switching Time Test Circuit
I
B1
PC=20μs
D.C.≤1%
OUTPUT
I
B2
1kΩ
INPUT
R
2kΩ
L
V
R
50Ω
+
+
220μF
470μF
V
= --5V
V
=20V
CC
BE
10I = --10I =I =10mA
B1 B2
C
Ordering Information
Device
CPH5905G-TL-E
CPH5905H-TL-E
Package
CPH5
Shipping
memo
3,000pcs./reel
3,000pcs./reel
Pb Free
CPH5
No.7177-2/8
CPH5905
I
D
-- V
I
D
-- V
DS
[FET]
[FET]
DS
20
16
12
8
20
16
12
8
4
0
4
0
0
0.4
0.8
1.2
1.6
2.0
2.4
0
2
4
6
8
10
12
Drain-to-Source Voltage, V
-- V ITR02749
[FET]
Drain-to-Source Voltage, V
DS
-- V
ITR02750
DS
I
D
-- V
I -- V
D GS
[FET]
GS
22
20
18
16
14
12
10
8
16
14
12
V
=5V
V
=5V
DS
DS
I
=15mA
DSS
10
8
6
6
4
2
0
4
2
0
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0.2
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0.2
IT04224
Gate-to-Source Voltage, V
-- V
ITR02752
Gate-to-Source Voltage, V
-- V
GS
GS
| yfs | -- I
[FET]
[FET]
| yfs | -- I
D
DSS
7
100
V
V
=5V
DS
V
=5V
DS
=0V
GS
5 f=1kHz
7
5
f=1kHz
3
2
3
2
10
7
5
3
2
10
3
5
7
2
3
5
7
2
3
5
7
2
3
5
1.0
10
10
Drain Current, I -- mA
Drain Current, I -- mA
DSS
IT04225
[FET]
IT04226
D
[FET]
=0V
V
(off) -- I
Ciss -- V
GS
DSS
DS
3
2
3
2
V
=5V
V
DS
I =100μA
GS
f=1MHz
D
10
1.0
7
5
7
5
3
3
7
2
3
5
7
2
3
5
7
2
3
10
1.0
10
Drain Current, I
DSS
-- mA
IT04227
IT04228
Drain-to-Source Voltage, V
-- V
DS
No.7177-3/8
CPH5905
NF -- f
[FET]
=0V
f=1MHz
[FET]
=5V
I =1mA
Crss -- V
DS
10
10
8
V
V
DS
DS
D
7
Rg=1kΩ
5
6
3
2
4
1.0
2
0
7
5
7
2
3
5
7
2
3
2
3
5 7
2
3
5 7
2
3
5 7
2
3
5 7
100
1.0
10
0.01
0.1
1.0
10
IT04229
ITR02758
Drain-to-Source Voltage, V
-- V
Frequency, f -- kHz
DS
NF -- Rg
[FET]
P
-- Ta
[FET]
D
10
8
400
350
300
250
200
150
100
V
=5V
I =1mA
DS
D
f=1kHz
6
4
2
0
50
0
2
3
5 7
2
3
5 7
2
3
5 7
2
3
5 7
1000
0
20
40
60
80
100
120
140
160
0.1
1.0
10
100
ITR02759
IT09866
Ambient Temperature, Ta -- °C
Signal Source Resistance, Rg -- kΩ
I
-- V
[TR]
I -- V
C CE
[TR]
C
CE
50
12
10
8
45
40
35
30
25
20
15
10
30μA
6
25μA
μA
100
20μA
4
15μA
10μA
5μA
50μA
2
0
5
0
I =0μA
I =0μA
B
B
40
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
5
10
15
20
25
30
35
45
50
Collector-to-Emitter Voltage, V
-- V
V
Collector-to-Emitter Voltage, V
-- V ITR10376
[TR]
ITR10377
CE
CE
I
C
-- V
BE
h
-- I
C
[TR]
FE
2
160
140
120
100
80
=6V
CE
V
=6V
CE
1000
7
5
Ta=75°C
3
2
25°C
60
40
--25°C
100
7
20
0
5
3
2
3
5
2
3
5
2
3
5
2
3
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1.0
10
100
ITR10379
Collector Current, I -- mA
Base-to-Emitter Voltage, V
BE
-- V ITR10378
C
No.7177-4/8
CPH5905
f
-- I
[TR]
=6V
Cib -- V
[TR]
T
C
EB
7
5
5
V
f=1MHz
CE
3
2
3
2
10
7
5
100
7
5
3
2
3
2
1.0
2
3
5
7
2
3
5
7
2
5
7
2
3
5
7
1.0
10
100
1.0
10
ITR10380
Emitter-to-Base Voltage, V
-- V ITR10381
[TR]
Collector Current, I -- mA
C
EB
Cob -- V
CB
[TR]
V
(sat) -- I
CE C
3
2
5
f=1MHz
I
/ I =10
B
C
3
2
1.0
7
5
10
7
5
3
2
3
2
0.1
7
5
1.0
3
2
7
5
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
1.0
10
100
1.0
10
100
Collector-to-Base Voltage, V
-- V
Collector Current, I -- mA
ITR10382
ITR10383
CB
C
V
(sat) -- I
[TR]
P -- Ta
C
[TR]
BE
C
10
400
I
/ I =10
B
C
7
5
350
300
250
200
150
100
3
2
1.0
7
5
50
0
3
0
20
40
60
80
100
120
140
160
2
3
5
7
2
3
5
7
2
1.0
10
100
IT09867
ITR10384
Ambient Temperature, Ta -- °C
Collector Current, I -- mA
C
No.7177-5/8
CPH5905
Embossed Taping Specification
CPH5905G-TL-E, CPH5905H-TL-E
No.7177-6/8
CPH5905
Outline Drawing
Land Pattern Example
CPH5905G-TL-E, CPH5905H-TL-E
Mass (g) Unit
Unit: mm
0.02
mm
* For reference
0.6
0.95
0.95
No.7177-7/8
CPH5905
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
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different from current conditions on the usage of automotive device, communication device, office equipment,
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prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
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otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of June, 2012. Specifications and information herein are subject
to change without notice.
PS No.7177-8/8
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