CPH6434 [SANYO]
N-Channel Silicon MOSFET General-Purpose Switching Device; N沟道MOSFET硅通用开关设备
| 型号： | CPH6434 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | N-Channel Silicon MOSFET General-Purpose Switching Device |
| 文件： | 总4页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA0443
SANYO Sem iconductors
DATA S HEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
CPH6434
Features
• Ultrahigh-speed switching.
• 1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Symbol
Conditions
Ratings
Unit
V
V
V
30
±10
6
DSS
Gate-to-Source Voltage
Drain Current (DC)
V
GSS
I
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
PW≤10µs, duty cycle≤1%
24
A
DP
P
Mounted on a ceramic board (900mm2✕0.8mm)
1.6
150
W
°C
°C
D
Tch
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
30
V
µA
µA
V
(BR)DSS
D GS
I
V
V
V
V
=30V, V =0V
GS
1
±10
1.3
DSS
GSS
DS
GS
DS
DS
I
=±8V, V =0V
DS
V
(off)
GS
=10V, I =1mA
0.4
4.4
D
Forward Transfer Admittance
yfs
=10V, I =3A
7.4
31
S
D
R
(on)1
DS
(on)2
DS
(on)3
DS
I
D
I
D
I
D
=3A, V =4V
GS
41
57
90
mΩ
mΩ
mΩ
pF
pF
pF
ns
Static Drain-to-Source On-State Resistance
R
R
=1.5A, V =2.5V
GS
40
=0.3A, V =1.8V
GS
55
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Ciss
V
V
V
=10V, f=1MHz
DS
=10V, f=1MHz
DS
=10V, f=1MHz
DS
790
125
110
16.5
78
Coss
Crss
t (on)
d
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
t
r
ns
Turn-OFF Delay Time
Fall Time
t (off)
d
77
ns
t
f
125
ns
Marking : ZL
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82306 / 62006PE MS IM TB-00002101 No. A0443-1/4
CPH6434
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Total Gate Charge
Qg
Qgs
Qgd
V
V
V
=10V, V =4V, I =6A
7.0
nC
nC
nC
V
DS
DS
DS
GS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
=10V, V =4V, I =6A
1.8
GS
D
=10V, V =4V, I =6A
GS
1.9
D
V
SD
I =6A, V =0V
S
0.86
1.2
GS
Package Dimensions
unit : mm
Switching Time Test Circuit
7018A-003
V
=15V
V
DD
D
IN
4V
0V
2.9
0.15
0.05
I
=3A
D
V
IN
6
5
4
3
R =5Ω
L
V
OUT
PW=10µs
D.C.≤1%
G
1
2
0.95
1 : Drain
2 : Drain
3 : Gate
0.4
CPH6434
P. G
50Ω
S
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
I
-- V
I
-- V
D GS
D
DS
10
6
5
4
3
2
V
DS
=10V
9
8
7
6
5
4
3
2
V
=1.5V
GS
1
0
1
0
0
0.2
0.4
0.6
0.8
1.0
0
0.5
1.0
1.5
2.0
2.5
IT11181
Drain-to-Source Voltage, V
-- V
Gate-to-Source Voltage, V -- V
GS
IT11180
DS
R
(on) -- V
R (on) -- Ta
DS
DS
GS
100
80
140
120
100
80
Ta=25°C
1.5A
3.0A
I =0.3A
60
D
60
40
40
20
0
20
0
0
2
4
6
10
IT11241
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
GS
-- V
Ambient Temperature, Ta -- °C
IT11183
No. A0443-2/4
CPH6434
y
fs -- I
I
-- V
SD
D
S
10
7
5
3
2
V
=10V
V
=0V
DS
GS
3
2
10
7
5
1.0
7
5
3
2
3
2
1.0
7
5
0.1
7
5
3
2
3
2
0.1
0.01
0.01
2
3
5
7
2
3
5
7
2
3
5 7
10
0
0.2
0.4
0.6
0.8
1.0
1.2
IT11185
0.1
1.0
Drain Current, I -- A
IT11184
Diode Forward Voltage, V -- V
SD
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
3
2
5
f=1MHz
V
=15V
=4V
DD
V
GS
3
2
1000
7
5
100
7
5
3
2
3
2
t (on)
d
100
7
5
10
0.1
2
3
5
7
2
3
5
7
0
5
10
15
20
25
30
1.0
10
Drain Current, I -- A
IT11186
Drain-to-Source Voltage, V
-- V
IT11187
D
DS
V
GS
-- Qg
A S O
4.0
3.5
3.0
2.5
2.0
1.5
1.0
5
I
=24A
V
=10V
=6A
≤10µs
DP
DS
3
2
I
D
10
7
5
I
D
=6A
3
2
1.0
7
5
Operation in this area
is limited by R (on).
3
2
DS
0.1
7
5
Ta=25°C
3
2
0.5
0
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm)
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
0
1
2
3
4
5
6
7
0.01
0.1
1.0
10
Total Gate Charge, Qg -- nC
IT11188
Drain-to-Source Voltage, V
-- V
IT11189
DS
P
D
-- Ta
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT11190
No. A0443-3/4
CPH6434
Note on usage : Since the CPH6434 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
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or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of June, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0443-4/4
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