DCA010_06 [SANYO]
Very High-Speed Switching Diode; 超高速开关二极管
| 型号： | DCA010_06 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | Very High-Speed Switching Diode |
| 文件： | 总3页 (文件大小：30K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN1892B
SANYO Sem iconductors
DATA S HEET
Silicon Epitaxial Planar Type (Anode Common)
DCA010
Very High-Speed Switching Diode
Features
Package Dimensions
unit : mm
1117B
•
Ideally suited for use in hybrid ICs because
of very small-sized package.
• Fast switching speed.
• Small interterminal capacitance.
[DCA010]
0.4
0.16
3
Electrical Connection
0 to 0.1
Anode
3
0.95
0.95
2
1
1 : Cathode
2 : Cathode
3 : Anode
1.9
2.9
1
2
(Top view)
SANYO : CP
Cathode
Cathode
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Peak Reverse Voltage
Symbol
Conditions
Ratings
Unit
V
V
85
RM
Reverse Voltage
V
R
80
V
Peak Forward Current
I
Unit rating
Total rating
Unit rating
Total rating
Unit rating
Total rating
300
mA
mA
mA
mA
A
FM
450
Average Rectified Current
I
O
100
150
Surge Current (1µs)
I
4
FSM
6
200
A
Allowable Power Dissipation
Junction Temperature
Storage Temperature
P
Tj
mW
°C
°C
125
Tstg
--55 to +125
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N0106 / 12000 GI IM / 2019MO, TS No.1892-1/3
DCA010
Electrical Characteristics at Ta=25°C
Parameter
Forward Voltage
Symbol
Conditions
min
typ
0.61
0.74
max
Unit
V
V
V
V
I =1mA
F
I =10mA
F
I =100mA
F
F1
F2
F3
R1
V
1.20
V
Reverse Current
I
I
V
R
V
R
V
R
=30V
0.1
0.5
4.0
4.0
µA
µA
pF
ns
=80V
R2
C
Interterminal Capacitance
Reverse Recovery Time
=0, f=1MHz
t
rr
I =10mA, V =6V, R =50Ω, I =0.1Irp
F
R
L
rr
Marking : W5
Reverse Recovery Time Test Circuit
0.01µF
DUT
0.1Irp
I =10mA
F
0
2kΩ
50Ω
50Ω
Irp
--6V
50ns
t
rr
I -- V
F
I
-- V
R R
F
3
10
10
5
5
2
2
2
10
1.0
5
2
5
10
2
5
--1
10
2
5
2
1.0
5
--2
2
--1
10
10
5
2
5
2
--3
--2
10
10
0
0.2
0.4
0.6
0.8
1.0
1.2
0
20
40
60
80
100
Forward Voltage, V -- V
IT02033
Reverse Voltage, V -- V
R
IT02034
F
C -- V
t
-- I
R
rr
F
100
3.0
2.5
2.0
1.5
1.0
f=1MHz
7
5
3
2
10
7
5
3
2
0.5
0
1.0
7
5
2
3
5
2
3
5
2
3
5
2
3
5
2
3
5
2
3
5
2
0.1
1.0
10
100
0.1
1.0
10
100
Forward Current, I -- mA
Reverse Voltage, V -- V
R
IT02035
IT02036
F
No.1892-2/3
DCA010
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of Feburuary, 1999. Specifications and information herein are subject
to change without notice.
PSNo.1892-3/3
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