DTA1E [SANYO]
1.0A Bidirectional Thyristor; 1.0A的双向晶闸管
| 型号： | DTA1E |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | 1.0A Bidirectional Thyristor |
| 文件： | 总3页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN2283B
Silicon Planar Type
DTA1
1.0A Bidirectional Thyristor
Features
• Low AC power control use.
• Peak OFF-state voltage : 200 to 400V
• RMS ON-state current : 1A
• TO-92 package.
Absolute Maximum Ratings at Ta=25°C
DTA1C
200
DTA1E
400
unit
V
Repetitive Peak
V
DRM
T(RMS)
TSM
OFF-StateVoltage
RMS ON-State Current
I
I
Tc=74°C, single-phase
full-wave
Peak 1 cycle, 50Hz
1ms≤t≤10ms
→
1.0
A
Surge ON-State Current
Amperes Squared-Seconds
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
→
→
→
→
→
→
→
8
0.32
1
0.1
±0.5
A
A2s
W
W
A
∫ i2T·dt
P
P
I
f≥50Hz, duty≤10%
GM
G(AV)
GM
f≥50Hz, duty≤10%
f≥50Hz, duty≤10%
Peak Gate Voltage
V
GM
±6
125
–40 to +125
0.2
V
Junction Temperature
Strage Temperature
Tj
Tstg
°C
°C
g
Weght
→
Electrical Characteristics at Ta=25°C
min
typ
max
10
unit
µA
Repetitive Peak
I
Tj=25°C, V =V
D DRM
DRM
OFF-State Current
Peak ON-State Voltage
Holding Current
Gate Trigger Current* (I)
V
I
=1.5A
1.5
10
5
V
mA
mA
mA
mA
mA
V
V
V
V
V
TM
TM
D
I
I
I
I
I
V =12V, gate open
V =12V, R =20Ω
D L
V =12V, R =20Ω
V =12V, R =20Ω
V =12V, R =20Ω
V =12V, R =20Ω
V =12V, R =20Ω
V =12V, R =20Ω
H
GT
GT
GT
GT
(II)
(III)
(IV)
5
D
D
D
L
L
L
10
2
5
2
2
–
2
Gate Trigger Voltage* (I)
V
GT
V
GT
V
GT
V
GT
V
GD
D L
(II)
(III)
(IV)
D
D
D
L
L
L
V =12V, R =20Ω
Tc=125°C, V =V
Between junction and case, AC
Gate Nontrigger Voltage
Thermal Resistance
0.2
–
40
D
DRM
Rth(j-c)
°C/W
Package Dimensions 1192B
(unit : mm)
* : The gate trigger mode is shown below.
Trigger mode
T2
+
T1
–
G
+
–
I
II
+
–
III
IV
–
+
+
–
–
+
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
O0797GI/3089MO, TS No.2283-1/3
DTA1
ON-State Voltage, V
T
–
V
Number of Cycles at 50Hz, n
RMS ON-State Current, I (RMS)
T
– A
Gate Current, I
–
V
G
RMS ON-State Current, I (RMS)
T
– A
RMS ON-State Current, I (RMS)
– A
T
Case Temperature, Tc
– °C
Case Temperature, Tc
– °C
No.2283-2/3
DTA1
Case Temperature, Tc
– °C
Time, t
– s
Pulse Trigger Characteristic
Gate Trigger Pulse Width, t
– µs
w
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property lose.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of October, 1997. Specifications and information herein are subject
to change without notice.
No.2283-3/3
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