概述
规格参数
数据手册DZB10C 概述
1.0W Zener Diodes 1.0W稳压二极管 齐纳二极管
DZB10C 规格参数
| 是否Rohs认证： | 不符合 | 生命周期： | Obsolete |
| 包装说明： | PLASTIC, 1083, 2 PIN | 针数： | 2 |
| Reach Compliance Code： | unknown | ECCN代码： | EAR99 |
| HTS代码： | 8541.10.00.50 | 风险等级： | 5.92 |
| 外壳连接： | ISOLATED | 配置： | SINGLE |
| 二极管元件材料： | SILICON | 二极管类型： | ZENER DIODE |
| 最大动态阻抗： | 30 Ω | JESD-30 代码： | O-PALF-W2 |
| JESD-609代码： | e0 | 元件数量： | 1 |
| 端子数量： | 2 | 最高工作温度： | 150 °C |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | ROUND |
| 封装形式： | LONG FORM | 峰值回流温度（摄氏度）： | NOT SPECIFIED |
| 极性： | UNIDIRECTIONAL | 最大功率耗散： | 1 W |
| 认证状态： | Not Qualified | 标称参考电压： | 10 V |
| 子类别： | Voltage Reference Diodes | 表面贴装： | NO |
| 技术： | ZENER | 端子面层： | Tin/Lead (Sn/Pb) |
| 端子形式： | WIRE | 端子位置： | AXIAL |
| 处于峰值回流温度下的最长时间： | NOT SPECIFIED | 最大电压容差： | 5% |
| 工作测试电流： | 10 mA | Base Number Matches： | 1 |
DZB10C 数据手册
通过下载DZB10C数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Ordering number :EN653F
DZB6.2 to DZB30
Sillicon Diffused Junction Type
1.0W Zener Diodes
Features
Package Dimensions
unit:mm
· Plastic molded structure.
· Voltage regulator use.
· Power dissipation:P=1.0W.
1083
[DZB6.2 to DZB30]
· Zener voltage:V =6.2 to 30V
Z
C:Cathode
A:Anode
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
P
Conditions
Ratings
Unit
Power Dissipation
1.0
150
W
Junction Temperature
Storage Temperature
Tj
˚C
˚C
Tstg
–40 to +150
Electrical Characteristics at Ta = 25˚C
Type No.
Zener Characteristics
Forward Voltage Drop
Reverse Current
Zener Voltage
Dynamic
Resistance
Measured
Current
Measured
Current
[A]
Measured
Voltage
[V]
V
Z
V
I
R
F
[V]
[Ω]
I
[V]
[µA]
Z
[mA]
max
max
typ
6.2
6.8
7.5
8.2
9.1
10
min
5.60
max
6.80
max
60
60
30
30
30
30
30
30
30
30
30
DZB6.2U
6.8C
7.5C
8.2C
9.1C
10C
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
2
2
2
2
2
2
2
2
2
2
2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–10
–2.0
–3.0
–4.5
–4.9
–5.5
–6.0
–7.0
–8.0
–9.0
–10.0
–11.0
6.45
7.14
7.13
7.81
7.79
8.61
8.65
9.55
9.50
10.50
11.50
12.60
13.60
15.80
16.80
11C
11
10.50
11.40
12.40
14.30
15.20
12C
12
13C
13
15C
15
16C
16
18C
18
20
22
24
27
30
17.10
19.00
20.90
22.80
25.70
28.50
18.90
21.00
23.10
25.20
28.30
31.50
30
30
30
30
30
30
–10
–10
–10
–10
–10
–10
2
2
2
2
2
2
0.2
0.2
0.2
0.2
0.2
0.2
–10
–10
–10
–10
–10
–10
–13.0
–14.0
–16.0
–17.0
–19.0
–21.0
20C
22C
24C
27C
30C
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33098HA (KT)/13196GI/2089TA/1199MO/9205KI, TS No.653-1/2
DZB6.2 to 30
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of March, 1998. Specifications and information herein are subject to
change without notice.
PS No.653-2/2
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