EC3H03BA [SANYO]
VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications; VHF超高频的宽带低噪声放大器和振荡器的应用
| 型号： | EC3H03BA |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications |
| 文件： | 总5页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1068
SANYO Sem iconductors
DATA S HEET
NPN Epitaxial Planar Type Silicon Transistor
VHF to UHF Wide-Band Low-Noise
Amplifier and OSC Applications
EC3H03BA
Features
• Low noise : NF=1.1dB typ (f=1GHz).
• High gain :⏐S21e⏐2=12dB typ (f=1GHz).
• High cutoff frequency : f =7.5GHz typ.
T
• Ultraminiature (1006 size) and thin (0.5mm) leadless package .
• Halogen free compliance (UL94HB).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
V
V
20
12
CBO
CEO
EBO
V
2
V
I
100
150
150
mA
mW
°C
°C
C
Collector Dissipation
P
C
Junction Temperature
Storage Temperature
Tj
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
=10V, I =0A
Unit
min
max
1.0
10
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
I
I
V
V
V
V
V
V
V
V
μA
μA
CBO
CB
EB
CE
CE
CB
CB
CE
CE
E
=1V, I =0A
EBO
C
h
=5V, I =30mA
100
180
FE
C
Gain-Bandwitch Product
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
f
=5V, I =30mA
C
6
7.5
0.9
GHz
pF
T
Cob
Cre
=10V, f=1MHz
=10V, f=1MHz
1.4
2.0
0.65
12
pF
2
S21e
=5V, I =30mA, f=1GHz
10
dB
⏐
⏐
C
NF
=5V, I =7mA, f=1GHz
1.1
dB
C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
's products or
www.semiconductor-sanyo.com/network
52009AB MS IM TC-00001966 No. A1068-1/5
EC3H03BA
Package Dimensions
unit : mm (typ)
7039A-005
Type No. Indication (Top view)
Electrical Connection (Top view)
Polarity mark (Top)
C
Base
Collector
Emitter
*Electrodes : on the bottom
Polarity mark (Top)
Collector
Base
Emitter
I
-- V
I
-- V
CE
C
BE
C
50
40
30
20
100
80
60
40
20
10
0
0.05mA
I =0mA
B
0
0
2
10
0.2
0.4
0.6
0.8
1.0
1.2
IT01419
4
6
8
0
Base-to-Emitter Voltage, V
-- V
Collector-to-Emitter Voltage, V
-- V IT01418
BE
CE
No. A1068-2/5
EC3H03BA
h
FE
-- I
f
-- I
C
T
C
7
5
10
7
3
2
5
V
CE
=5V
100
2V
3
2
7
5
3
2
1.0
1.0
10
3
2
5
7
2
3
5
7
3
5
7
2
3
5
7
2
3
5
7
100
2
3
100
IT01421
10
1.0
10
Collector Current, I -- mA
IT01420
Collector Current, I -- mA
C
C
Cob -- V
Cre -- V
CB
CB
10
10
f=1MHz
f=1MHz
7
7
5
5
3
2
3
2
1.0
1.0
7
7
5
5
3
2
3
2
0.1
0.1
0.1
0.1
2
3
5
7
2
3
5
7
2
3
2
3
5
7
2
3
5
7
2
3
1.0
10
10
1.0
IT01422
IT01423
Collector-to-Base Voltage, V
-- V
Collector-to-Base Voltage, V
-- V
CB
CB
⏐S21e⏐2 -- I
NF -- I
C
C
16
14
12
10
8
10
8
f=1GHz
f=1GHz
6
4
6
4
2
0
2
0
2
3
5
7
7
7
2
3
5
2
3
5
7
2
3
5
7
10
100
IT01424
1.0
10
100
IT01425
1.0
Collector Current, I -- mA
Collector Current, I -- mA
C
C
P
-- Ta
C
160
150
140
120
100
80
60
40
20
0
0
20
40
160
ITR07925
60
80
100
120
140
Ambient Temperature, Ta -- °C
No. A1068-3/5
EC3H03BA
S Parameters (Common emitter)
V
V
V
=2V, I =1mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
--19.7
S
∠S21
165.8
153.5
129.9
113.2
99.4
S
∠S12
78.6
65.9
49.5
36.1
27.8
20.5
17.2
16.5
15.4
16.0
15.6
S
⏐
22
∠S22
--9.0
⏐
⏐
11
⏐
⏐
⏐
⏐
⏐
21
12
0.964
0.935
0.897
0.833
0.778
0.759
0.720
0.731
0.738
0.741
0.720
3.124
2.708
2.474
2.245
1.987
1.874
1.499
1.211
1.105
1.016
1.014
0.045
0.082
0.138
0.163
0.177
0.188
0.179
0.166
0.157
0.148
0.140
0.978
0.939
0.836
0.744
0.689
0.657
0.622
0.625
0.657
0.610
0.599
200
--39.7
--16.3
--27.7
--35.1
--39.9
--44.0
--48.2
--52.1
--55.1
--60.5
--64.9
400
--67.9
600
--93.6
800
--114.5
--127.0
--140.2
--146.4
--151.5
--156.8
--164.1
1000
1200
1400
1600
1800
2000
88.7
80.2
71.9
65.2
59.4
54.3
=2V, I =5mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
--40.4
S
∠S21
153.7
134.6
111.9
99.0
89.9
83.2
77.3
72.1
67.5
63.1
58.7
S
∠S12
70.0
55.1
41.8
39.5
40.2
41.0
42.9
45.8
47.9
50.0
52.6
S
⏐ ⏐
22
∠S22
--22.6
--39.0
--55.2
--61.2
--65.8
--69.9
--73.4
--76.1
--78.2
--79.7
--82.2
⏐
⏐
11
⏐
⏐
⏐
⏐
21
12
0.838
0.773
0.668
0.630
0.609
0.600
0.593
0.590
0.583
0.578
0.576
13.956
11.300
7.451
5.422
4.241
3.447
2.923
2.558
2.297
2.053
1.861
0.038
0.063
0.087
0.094
0.103
0.110
0.119
0.127
0.135
0.145
0.155
0.905
0.747
0.521
0.406
0.334
0.294
0.268
0.255
0.253
0.259
0.254
200
--70.4
400
--112.8
--133.8
--147.0
--155.3
--162.1
--167.1
--172.2
--175.8
--179.7
600
800
1000
1200
1400
1600
1800
2000
=2V, I =20mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
--80.4
S
∠S21
135.0
114.6
98.0
89.8
83.8
78.9
74.5
70.6
66.8
63.4
59.6
S
∠S12
58.2
48.7
52.8
57.1
60.9
62.6
63.7
64.5
64.0
63.8
63.8
S
⏐
22
∠S22
--46.8
⏐
⏐
11
⏐
⏐
⏐
⏐
⏐
21
12
0.618
0.574
0.558
0.554
0.552
0.549
0.545
0.546
0.544
0.541
0.541
28.462
18.357
10.129
6.930
5.257
4.252
3.595
3.104
2.742
2.470
2.241
0.029
0.039
0.053
0.066
0.081
0.098
0.115
0.129
0.147
0.162
0.178
0.705
0.461
0.273
0.203
0.170
0.156
0.148
0.142
0.140
0.140
0.133
200
--119.9
--149.5
--161.5
--168.7
--173.6
--177.4
179.4
--69.0
400
--89.1
600
--99.8
800
--108.1
--113.9
--117.2
--121.2
--123.8
--126.9
--128.1
1000
1200
1400
1600
1800
2000
176.5
173.9
171.5
No. A1068-4/5
EC3H03BA
S Parameters (Common emitter)
V
=5V, I =3mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
--27.4
S
∠S21
161.3
145.5
122.5
107.6
97.3
S
∠S12
74.5
62.3
46.8
38.9
37.7
35.8
37.1
36.7
41.4
44.5
51.1
S
⏐
22
∠S22
--12.6
--21.8
--34.9
--39.9
--43.1
--46.2
--47.0
--49.0
--51.6
--54.6
--57.2
⏐
⏐
⏐
⏐
⏐
⏐
⏐
11
21
12
0.907
0.857
0.737
0.682
0.650
0.638
0.628
0.612
0.597
0.595
0.599
9.110
8.122
6.152
4.800
3.718
3.112
2.749
2.487
2.161
1.930
1.679
0.032
0.057
0.085
0.096
0.100
0.104
0.109
0.112
0.115
0.118
0.125
0.956
0.881
0.698
0.588
0.516
0.458
0.458
0.453
0.450
0.437
0.424
200
--51.5
400
--91.8
600
--114.8
--130.1
--140.2
--148.2
--156.0
--163.0
--167.0
--171.1
800
1000
1200
1400
1600
1800
2000
89.3
81.8
75.8
70.6
65.7
60.7
V
=5V, I =10mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
--49.5
S
∠S21
148.6
128.2
107.1
96.4
88.8
83.1
78.1
73.6
69.5
65.7
61.7
S
∠S12
67.7
53.2
49.0
50.6
53.2
55.2
58.2
60.6
61.5
62.4
63.4
S
⏐
22
∠S22
--25.8
--40.9
--52.3
--54.4
--55.6
--56.7
--57.7
--59.4
--60.3
--62.8
--63.9
⏐
⏐
⏐
⏐
⏐
⏐
⏐
11
21
12
0.751
0.660
0.572
0.543
0.530
0.525
0.518
0.515
0.514
0.509
0.511
22.017
16.702
10.313
7.243
5.571
4.531
3.831
3.312
2.943
2.636
2.387
0.027
0.042
0.056
0.066
0.077
0.088
0.098
0.110
0.122
0.135
0.148
0.860
0.664
0.437
0.342
0.289
0.259
0.244
0.235
0.232
0.234
0.230
200
--84.6
400
--123.4
--142.1
--153.3
--160.2
--166.2
--170.5
--174.4
--177.2
179.6
600
800
1000
1200
1400
1600
1800
2000
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
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product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
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intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of May, 2009. Specifications and information herein are subject
to change without notice.
PS No. A1068-5/5
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