EC4402C [SANYO]
Small Signal Switch and Interface Applications; 小信号开关和接口应用
| 型号： | EC4402C |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | Small Signal Switch and Interface Applications |
| 文件： | 总5页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN7037A
SANYO Sem iconductors
DATA S HEET
N-Channel Silicon MOSFET
Small Signal Switch and Interface
Applications
EC4402C
Features
• Low ON-resistance.
• Ultrahigh-speed switching.
• 2.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
50
±10
0.1
DSS
GSS
V
V
I
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
PW≤10µs, duty cycle≤1%
0.4
A
DP
P
0.15
150
W
°C
°C
D
Tch
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Unit
Parameter
Symbol
Conditions
=1mA, V =0V
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
50
V
µA
µA
V
(BR)DSS
D
GS
I
V
V
V
V
=50V, V =0V
GS
1
DSS
GSS
DS
GS
DS
DS
I
=±8V, V =0V
DS
±10
V (off)
GS
=10V, I =100µA
0.4
1.3
D
Forward Transfer Admittance
yfs
=10V, I =50mA
0.13
0.18
S
D
R
(on)1
DS
(on)2
DS
(on)3
DS
I
D
I
D
I
D
=50mA, V =4V
GS
6
7.1
10
7.8
9.9
20
Ω
Static Drain-to-Source On-State Resistance
R
R
=30mA, V =2.5V
GS
Ω
=10mA, V =1.5V
GS
Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Ciss
V
V
V
=10V, f=1MHz
=10V, f=1MHz
=10V, f=1MHz
6.6
4.7
1.7
18
pF
pF
pF
ns
ns
ns
ns
DS
DS
DS
Coss
Crss
t (on)
d
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
t
r
42
Turn-OFF Delay Time
Fall Time
t (off)
d
190
105
t
f
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71206 / 42006PE MS IM TB-00002219 / 81001 TS IM TA-3332
No.7037-1/5
EC4402C
Continued from preceding page.
Ratings
typ
Unit
Parameter
Symbol
Conditions
=10V, V =10V, I =100mA
min
max
Total Gate Charge
Qg
Qgs
Qgd
V
V
V
1.57
nC
nC
nC
V
DS
DS
DS
GS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
=10V, V =10V, I =100mA
GS
0.20
0.32
0.9
D
=10V, V =10V, I =100mA
GS
D
V
SD
I =100mA, V =0V
GS
1.2
S
Package Dimensions
unit : mm
Type No. Indication
7036-001
Top View
0.8
U
3
2
4
1
Top view
Polarity Discriminating Mark
0.5
0.2
1 : Gate
1
4
2
2 : Source
3 : Drain
4 : Drain
3
SANYO : ECSP1008-4
Bottom View
Electrical Connection
Switching Time Test Circuit
Polarity mark (Top)
Gate
V
=25V
DD
V
IN
4V
0V
I
=50mA
D
Drain
R =500Ω
L
Source
V
D
V
OUT
IN
PW=10µs
D.C.≤1%
*Electrodes : on the bottom
Top view
G
Polarity mark (Top)
P. G
50Ω
Drain
EC4402C
S
Gate
Source
No.7037-2/5
EC4402C
I
-- V
I
D
-- V
GS
D
DS
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.20
0.18
0.16
0.14
V =10V
DS
3.5V
4.0V
V =1.5V
GS
0.12
0.10
0.08
0.06
0.04
0.02
0.01
0
0.02
0
0
0.2
0.4
0.6
0.8
1.0
IT00054
0
0.5
1.0
1.5
2.0
2.5
3.0
Drain-to-Source Voltage, V
-- V
Gate-to-Source Voltage, V -- V
GS
IT00055
DS
R
DS
(on) -- V
R
DS
(on) -- I
GS
D
100
12
V =4V
GS
Ta=25°C
7
5
11
10
9
3
2
8
7
6
5
4
50mA
10
I =30mA
D
Ta=75°C
7
5
25°C
--25°C
3
2
3
2
1.0
2
2
2
3
5
7
2
3
0
1
2
3
4
5
6
7
8
9
10
0.01
0.1
Gate-to-Source Voltage, V
GS
-- V
IT00056
Drain Current, I -- A
R
IT00057
D
R
(on) -- I
(on) -- I
DS
D
DS
D
100
100
V
=2.5V
V
=1.5V
GS
GS
7
5
7
5
3
2
3
2
Ta=75°C
25°C
Ta=75°C
10
10
--25°C
25°C
--25°C
7
5
7
5
3
2
3
2
1.0
1.0
0.001
2
3
5
7
2
3
3
5
7
2
3
0.01
0.1
0.01
IT00058
Drain Current, I -- A
IT00059
Drain Current, I -- A
D
D
R
(on) -- Ta
yfs -- I
DS
D
14
1.0
V
=10V
DS
7
5
12
10
8
3
2
0.1
6
4
7
5
3
2
2
0
0.01
0.01
3
5
7
2
3
--60 --40 --20
0
20
40
60
80 100 120 140 160
0.1
Ambient Temperature, Ta -- °C
Drain Current, I -- A
D
IT00060
IT00061
No.7037-3/5
EC4402C
I
-- V
SW Time -- I
D
S
SD
3
2
1000
V
=25V
DD
V
=0V
GS
7
V
=4V
GS
5
3
2
t (off)
d
0.1
7
5
t
f
100
7
5
t
r
3
2
3
2
t (on)
d
0.01
0.5
10
0.01
2
3
5
7
0.6
0.7
0.8
0.9
1.0
1.1
IT00062
0.1
IT00063
Diode Forward Voltage, V
SD
-- V
Drain Current, I -- A
D
Ciss, Coss, Crss -- V
V
GS
-- Qg
DS
10
100
f=1MHz
V
=10V
DS
7
9
8
7
I =100mA
D
5
3
2
6
5
4
3
2
10
Ciss
7
5
Coss
3
2
1
0
Crss
1.0
0
5
10
15
20
25
30
35
40
45
50
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Drain-to-Source Voltage, V
-- V
IT00064
Total Gate Charge, Qg -- nC
IT00065
DS
P
D
-- Ta
0.20
0.15
0.10
0.05
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT00236
No.7037-4/5
EC4402C
This catalog provides information as of April, 2006. Specifications and information herein are subject
to change without notice.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
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and all semiconductor products fail with some probability. It is possible that these probabilistic failures
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so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
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In the event that any or all SANYO Semiconductor products (including technical data,services) described
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or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of April, 2006. Specifications and information herein are subject
to change without notice.
PS No.7037-5/5
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