EMH2603 [SANYO]
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device; N沟道和P沟道MOSFET的硅通用开关设备
| 型号： | EMH2603 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device |
| 文件： | 总7页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA0657
SANYO Sem iconductors
DATA S HEET
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
EMH2603
Features
• The EMH2603 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
ultrahigh-speed switching, thereby enabling high-density mounting.
• Nch: 2.5V drive.
• Pch: 1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
N-channel
30
P-channel
--20
Unit
V
V
DSS
GSS
V
±10
0.15
0.6
±10
--2
V
I
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
I
PW≤10µs, duty cycle≤1%
--8
A
DP
P
D
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
Mounted on a ceramic board (900mm2✕0.8mm)
0.6
1.1
W
W
°C
°C
P
1.2
T
Channel Temperature
Storage Temperature
Tch
150
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
30
V
µA
µA
V
(BR)DSS
D GS
I
V
V
V
V
=30V, V =0V
GS
1
DSS
GSS
DS
GS
DS
DS
I
=±8V, V =0V
DS
±10
V
(off)
GS
=10V, I =100µA
0.4
1.3
D
Forward Transfer Admittance
Marking : FC
yfs
=10V, I =80mA
0.13
0.22
S
D
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
's products or
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22107PE TI IM TC-00000506
No. A0657-1/7
EMH2603
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
3.7
R
DS
R
DS
R
DS
(on)1
(on)2
(on)3
I
I
I
=80mA, V =4V
2.9
Ω
Ω
D
D
D
GS
Static Drain-to-Source On-State Resistance
=40mA, V =2.5V
3.7
5.2
GS
=10mA, V =1.5V
GS
6.4
12.8
Ω
Input Capacitance
Ciss
V
V
V
=10V, f=1MHz
=10V, f=1MHz
=10V, f=1MHz
7.0
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
DS
DS
Output Capacitance
Coss
Crss
5.9
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
2.3
t (on)
d
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
19
t
r
65
Turn-OFF Delay Time
Fall Time
t (off)
d
155
120
1.58
0.26
0.31
0.87
t
f
Total Gate Charge
Qg
Qgs
Qgd
V
V
V
=10V, V =10V, I =150mA
GS
DS
DS
DS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
=10V, V =10V, I =150mA
GS
D
=10V, V =10V, I =150mA
GS
D
V
SD
I =150mA, V =0V
S
1.2
GS
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=--1mA, V =0V
--20
V
µA
µA
V
(BR)DSS
D
GS
=--20V, V =0V
I
V
V
V
V
--1
±10
--1.4
DSS
DS
GS
DS
DS
GS
I
=±8V, V =0V
DS
GSS
V
(off)
GS
=--10V, I =--1mA
--0.4
1.9
D
Forward Transfer Admittance
yfs
=--10V, I =--1A
3.2
115
165
260
420
73
S
D
R
(on)1
I
D
I
D
I
D
=--1A, V =--4V
GS
150
235
520
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
DS
DS
Static Drain-to-Source On-State Resistance
R
R
(on)2
(on)3
=--0.5A, V =--2.5V
GS
=--0.3A, V =--1.8V
GS
Input Capacitance
Ciss
V
V
V
=--10V, f=1MHz
DS
=--10V, f=1MHz
DS
=--10V, f=1MHz
DS
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
60
t (on)
d
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
11.8
33
t
r
Turn-OFF Delay Time
Fall Time
t (off)
d
48
t
43
f
Total Gate Charge
Qg
Qgs
Qgd
V
V
V
=--10V, V =--4V, I =--2A
GS
4.7
DS
DS
DS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
=--10V, V =--4V, I =--2A
GS
0.75
1.6
D
=--10V, V =--4V, I =--2A
GS
D
V
SD
I =--2A, V =0V
S GS
--0.83
--1.2
Package Dimensions
unit : mm (typ)
Electrical Connection
7045-005
8
7
6
5
0.2
0.125
1 : Source1
8
5
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain1
7 : Drain1
8 : Drain1
1
4
0.5
2.0
1
2
3
4
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain1
7 : Drain1
8 : Drain1
Top view
SANYO : EMH8
No. A0657-2/7
EMH2603
Switching Time Test Circuit
[N-channel]
[P-channel]
V
= --10V
DD
V
IN
V
=15V
DD
V
IN
0V
4V
0V
--4V
I
= --1A
D
I
=80mA
D
V
IN
V
R =10Ω
IN
L
R =187.5Ω
L
D
V
OUT
D
V
OUT
PW=10µs
D.C.≤1%
PW=10µs
D.C.≤1%
R
g
G
G
EMH2603
EMH2603
P. G
50Ω
S
P.G
50Ω
S
I
-- V
DS
[Nch]
I
-- V
[Pch]
D
D
DS
0.16
0.14
0.12
0.10
0.08
0.06
0.04
--2.0
--1.8
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
3.5V
4.0V
V
GS
=1.5V
0.02
0
V
= --1.5V
GS
--0.2
0
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0
0.2
0.4
0.6
0.8
1.0
Drain-to-Source Voltage, V
-- V
IT00029
Drain-to-Source Voltage, V
-- V
IT10538
DS
DS
I
-- V
[Nch]
I
-- V
[Pch]
D
GS
D
GS
0.30
0.25
0.20
0.15
0.10
--2.0
--1.8
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
V
= --10V
V
DS
=10V
DS
0.05
0
--0.2
0
0
0.5
1.0
1.5
2.0
2.5
3.0
IT00030
0
--0.5
--1.0
--1.5
--2.0
--2.5
IT10539
Gate-to-Source Voltage, V
-- V
Gate-to-Source Voltage, V
-- V
GS
GS
No. A0657-3/7
EMH2603
R
(on) -- V
GS
[Nch]
R
(on) -- V
GS
[Pch]
DS
DS
10
9
700
600
500
400
300
200
Ta=25°C
Ta=25°C
8
--0.5A
--1.0A
7
6
5
4
3
2
80mA
I = --0.3A
D
I =40mA
D
100
0
1
0
0
--2
--4
--6
--8
0
1
2
3
4
5
6
7
8
9
10
Gate-to-Source Voltage, V
-- V
Gate-to-Source Voltage, V
GS
-- V
IT10540
IT00031
GS
R
DS
(on) -- I
R
DS
(on) -- Ta
[Nch]
[Pch]
D
10
7
500
400
300
200
V
=4V
GS
5
Ta=75°C
25°C
3
2
--25°C
100
0
1.0
0.01
2
2
2
3
3
3
5
7
2
3
5
--60 --40 --20
0
20
40
60
80 100 120 140 160
0.1
Ambient Temperature, Ta -- °C
IT10541
Drain Current, I -- A
IT00032
D
R
(on) -- I
D
[Nch]
y
fs -- I
[Pch]
DS
D
10
10
V
= --10V
V
=2.5V
DS
GS
7
5
7
5
3
2
Ta=75°C
25°C
--25°C
1.0
3
2
7
5
3
2
1.0
0.01
0.1
--0.01
2
3
5
7
2
3
5
7
2
3
5 7
--10
5
7
2
3
5
--0.1
--1.0
0.1
Drain Current, I -- A
IT00033
Drain Current, I -- A
IT10542
(on) -D- I
D
R
[Nch]
I
-- V
[Pch]
DS
D
S
SD
100
--10
7
5
V
=1.5V
V
=0V
GS
GS
7
5
3
2
3
2
--1.0
7
5
10
3
2
Ta=75°C
--25°C
7
5
--0.1
7
5
3
2
25°C
3
2
1.0
0.001
--0.01
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
--1.1
5
7
2
3
5
0.01
Drain Current, I -- A
IT00034
Diode Forward Voltage, V
SD
-- V IT10543
D
No. A0657-4/7
EMH2603
R (on) -- Ta
DS
SW Time -- I
[Nch]
[Pch]
D
7
6
5
4
3
2
5
V
V
= --10V
= --4V
GS
DD
3
2
100
7
5
t
f
3
2
t (on)
d
10
7
5
1
0
3
2
3
5
7
2
3
5
7
--1.0
2
3
5
--60 --40 --20
0
20
40
60
80 100 120 140 160
--0.01
--0.1
Ambient Temperature, Ta -- °C
IT00035
IT10544
Drain Current, I -- A
D
Ciss, Coss, Crss -- V
DS
[Nch]
[Pch]
yfs -- I
D
1.0
1000
f=1MHz
V
DS
=10V
7
7
5
5
3
2
3
2
0.1
7
5
100
7
5
3
2
3
2
0.01
0.01
0
--5
--10
--15
--20
2
3
5
7
2
3
5
0.1
Drain Current, I -- A
IT00036
Drain-to-Source Voltage, V
-- V
IT10545
D
DS
I
-- V
SD
V
-- Qg
[Nch]
[Pch]
S
GS
1.0
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
V
=0V
GS
V
= --10V
DS
7
5
I
D
= --2A
3
2
0.1
7
5
3
2
--0.5
0
0.01
0.5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.6
0.7
0.8
0.9
1.0
1.1
1.2
Diode Forward Voltage, V
SD
-- V
IT00037
[Nch]
=15V
Total Gate Charge, Qg -- nC
IT10546
SW Time -- I
A S O
[Pch]
D
2
1000
V
V
I = --8A
DP
DD
PW≤10µs
--10
7
5
7
=4V
GS
5
3
2
I = --2A
D
3
2
t (off)
d
--1.0
7
5
t
f
100
3
2
7
5
t
r
Operation in this area
is limited by R (on).
--0.1
7
5
DS
3
2
t (on)
d
Ta=25°C
3
2
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
10
0.01
--0.01
2
3
5
7
2
2
3
5
7
2
3
5
7
2
3
5
7
--10
2
3
5
0.1
--0.01
--0.1
--1.0
Drain Current, I -- A
IT00038
Drain-to-Source Voltage, V
DS
-- V
IT11989
D
No. A0657-5/7
EMH2603
Ciss, Coss, Crss -- V
[Nch]
P
-- Ta
D
[Pch]
DS
100
1.4
f=1MHz
7
1.2
1.1
1.0
5
3
2
0.8
0.6
0.4
10
Ciss
7
5
Coss
3
2
0.2
0
1.0
0
20
40
60
80
100
120
140
160
0
2
4
6
8
10
12
14
16
18
20
Drain-to-Source Voltage, V
-- V
Ambient Temperature, Ta -- °C
IT00039
IT11991
DS
V
-- Qg
[Nch]
GS
10
V
=10V
=150mA
DS
9
8
7
6
5
4
3
2
I
D
1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Total Gate Charge, Qg -- nC
IT00040
A S O
[Nch]
1.0
7
I
=0.6A
DP
PW
≤10µs
5
3
2
100ms
I
=0.15A
D
0.1
7
Operation in this area
is limited by R (on).
5
DS
3
2
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
0.01
2
3
5
7
2
3
5
7
1.0
2
3
5
0.01
0.1
IT11988
Drain-to-Source Voltage, V
DS
-- V
P
-- Ta
[Nch]
D
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT11990
No. A0657-6/7
EMH2603
Note on usage : Since the EMH2603 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of February, 2007. Specifications and information herein are subject
to change without notice.
PS
No. A0657-7/7
相关型号：
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