ENA1000 [SANYO]
N-Channel Silicon MOSFET General-Purpose Switching Device Applications; N沟道MOSFET硅通用开关设备的应用
| 型号： | ENA1000 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 文件： | 总4页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1000
SANYO Sem iconductors
DATA S HEET
N-Channel Silicon MOSFET
MCH3475
General-Purpose Switching Device
Applications
Features
•
Ultrahigh-speed switching.
•
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
30
±20
1.8
7.2
DSS
GSS
V
V
I
D
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2✕0.8mm)
A
DP
P
0.8
W
°C
°C
D
Tch
150
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
D GS
30
V
µA
µA
V
(BR)DSS
I
V
V
V
V
=30V, V =0V
GS
1
DSS
DS
GS
DS
DS
I
=±16V, V =0V
DS
±10
GSS
V
(off)
GS
=10V, I =1mA
1.2
2.6
D
Forward Transfer Admittance
yfs
⏐
=10V, I =0.9A
0.66
1.1
135
230
88
S
⏐
D
R
(on)1
I
I
=0.9A, V =10V
GS
180
330
mΩ
mΩ
pF
pF
pF
DS
D
D
Static Drain-to-Source On-State Resistance
R
(on)2
=0.5A, V =4V
GS
DS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : FG
Ciss
V
V
V
=10V, f=1MHz
DS
=10V, f=1MHz
DS
=10V, f=1MHz
DS
Coss
Crss
19
11
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
's products or
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1207PE TI IM TC-00001029 No. A1000-1/4
MCH3475
Continued from preceding page.
Ratings
typ
Parameter
Symbol
t (on)
Conditions
Unit
min
max
Turn-ON Delay Time
Rise Time
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
3.4
ns
ns
ns
ns
nC
nC
nC
V
d
t
r
3.6
10.5
4.0
Turn-OFF Delay Time
Fall Time
t (off)
d
t
f
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qg
V
V
V
=10V, V =10V, I =1.8A
GS
2.0
DS
DS
DS
D
Qgs
Qgd
=10V, V =10V, I =1.8A
GS
0.33
0.29
0.86
D
=10V, V =10V, I =1.8A
GS
D
V
I =1.8A, V =0V
1.2
SD
S
GS
Package Dimensions
unit : mm (typ)
Switching Time Test Circuit
7019A-003
V =15V
DD
V
IN
10V
0V
0.15
2.0
I
=0.9A
3
D
V
IN
R =16.7Ω
L
0 to 0.02
D
V
OUT
PW=10µs
D.C.≤1%
1
2
G
0.65
0.3
MCH3475
P.G
50Ω
S
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
I
-- V
I
-- V
GS
D
DS
D
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V =10V
DS
3.0V
=2.5V
0.9
0.2
0
0.2
0
V
GS
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Drain-to-Source Voltage, V
-- V
IT13107
Gate-to-Source Voltage, V
-- V
IT13108
DS
GS
No. A1000-2/4
MCH3475
R
(on) -- V
R
DS
(on) -- Ta
DS
GS
390
360
330
300
270
240
210
180
150
390
360
330
300
270
240
210
180
150
120
Ta=25°
C
I =0.5A
D
0.9A
120
90
90
60
0
2
4
6
8
10
12
14
16
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
-- V
Ambient Temperature, Ta -- °C
IT13109
IT13110
GS
⏐y
fs⏐ -- I
I
-- V
S SD
D
3
2
3
2
V =10V
DS
V =0V
GS
1.0
7
5
1.0
7
5
3
2
3
2
0.1
7
5
0.1
7
5
3
2
0.01
7
5
3
2
3
2
0.01
7
0.001
0.2
2
3
5
7
2
3
5
7
2
3
5 7
1.0
0.4
0.6
0.8
1.0
1.2
IT13112
0.001
0.01
0.1
Drain Current, I -- A
D
Diode Forward Voltage, V -- V
SD
IT13111
Ciss, Coss, Crss -- V
SW Time -- I
DS
D
5
3
2
V
V
=15V
DD
f=1MHz
=10V
GS
3
2
Ciss
100
7
5
10
7
5
3
2
t (on)
d
3
2
10
7
5
1.0
0.1
2
3
5
7
2
3
5
0
5
10
15
20
25
30
IT13114
1.0
Drain Current, I -- A
IT13113
Drain-to-Source Voltage, V
-- V
D
DS
V
-- Qg
A S O
GS
2
10
9
V
=10V
DS
10
7
I =7.2A
DP
PW≤10µs
I =1.8A
D
5
8
3
2
I =1.8A
D
7
1.0
6
7
5
5
3
2
4
3
0.1
Operation in this
area is limited by R (on).
7
5
DS
2
Ta=25°C
3
2
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm)
1
0
0.01
0.1
2
3
5
7
2
3
5
7
2
3
5
7
10
2
3
5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1
1.0
Total Gate Charge, Qg -- nC
IT13115
Drain-to-Source Voltage, V
DS
-- V
IT13116
No. A1000-3/4
MCH3475
P
-- Ta
D
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT13117
Note on usage : Since the MCH3475 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
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intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of December, 2007. Specifications and information herein are subject
to change without notice.
PS No. A1000-4/4
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