ENA1117 [SANYO]
Bi-CMOS LSI For camera sensor Power supply for charge pump; BI -CMOS LSI对于相机传感器电源的电荷泵
| 型号： | ENA1117 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | Bi-CMOS LSI For camera sensor Power supply for charge pump |
| 文件： | 总6页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1117
Bi-CMOS LSI
For camera sensor
LV5710V
Power supply for charge pump
Overview
The LV5710V is power supply for charge pump for camera sensor.
Functions
• Regulating the 5V input by boosting it three-fold with the charge pump to the specified voltage.
• Output voltage variable with external resistor.
• Soft start function incorporated, which reduces the rush current at start of charge pump.
• Timer-latch type short-circuit protective function incorporated.
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Maximum supply voltage
Allowable power dissipation
Operating temperature
Storage temperature
Symbol
Conditions
Ratings
Unit
V
V
max
6.0
0.55
DD
Pd max
with specified substrate *
W
Topr
Tstg
-20 to +80
-40 to +125
°C
°C
* : Specified substrate : 114.3mm×76.1mm×1.6mm, glass epoxy board
Allowable Operating Ratings at Ta = 25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
5.5
Supply voltage
V
4.5
1.5
V
V
V
DD
Input “H” voltage
Input “L” voltage
V
H
EN pin
EN pin
V
IN
DD
V
L
-0.1
0.4
IN
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
31908 MS PC 20080226-S00011 No.A1117-1/6
LV5710V
Electrical Characteristics at Ta = 25°C, V
= 5V, I
= 30mA, S0 = L, S1 = L, Unless otherwise specified
DD
OUT
Ratings
typ
Parameter
Circuit current drain
Symbol
Conditions
Unit
min
max
I
I
1
2
EN = L
1
18
30
μA
mA
mA
V
DD
EN = H No load
12
DD
Output load current
Reference voltage
I
ave
At V
= 12V setting
OUT
O
VREF
V
= 4.5 to 5.5V
1.285
1.279
-50
1.305
1.325
1.331
50
DD
Ta = -20°C to +80°C, Design value
After capacitive discharge
V
Output voltage at OFF
V
0
mV
ms
OFF
Protective circuit masking time
Tmask
Masking time from detection of short-circuit
to IC OFF
18
33
Short-circuit protective current
Short-circuit protective voltage
SS end time
I
35
50
65
92.5
10
mA
%
lim
V
82.5
87.5
lim
T
Time from EN = H to regulator SS OFF
Ta = -20°C to +80°C Design value
Load 1mA → 30mA
ms
SSEND
RO load regulation
Input pin current
ΔRO
30
40
40
50
1
mV
μA
Iin
Pins EN
30
S0 and S1 pins
CP+regulator
No load
μA
Power efficiency
Rush current
Peff
Irush
f clk
70
%
300
2.3
mA
MHz
Oscillation frequency
1.4
1.8
Package Dimensions
unit : mm (typ)
3178B
Pd max -- Ta
0.8
Mounted on a substrate : 114.3×76.1×1.6mm3
glass epoxy
5.2
16
9
0.6
0.55
0.4
0.25
0.2
0
1
8
0.65
0.15
(0.33)
0.22
–
20
0
20
40
60
80
100
Ambient temperature, Ta – °C
SANYO : SSOP16(225mil)
No.A1117-2/6
LV5710V
Pin Assignment
C2P
C1P
1
2
3
4
5
6
7
8
16 NC
15 CPO
14 RO
13 FB
12 EN
PV
DD
C2M
C1M
PGND
SGND
S0
11
10
9
SV
S1
DD
TEST
Top view
Pin Function
Pin No.
Name
Function
1
2
C2P
Boost capacitor connection pin (charge transfer side)
Boost capacitor connection pin (charge transfer side)
C1P
3
PV
DD
Power system V pin
DD
4
C2M
C1M
PGND
SGND
S0
Boost capacitor connection pin (driver side)
Boost capacitor connection pin (driver side)
Power GND pin for the charge pump
Small signal system GND pin
5
6
7
8
Charge pump frequency changeover pin
Test pin (open or short-circuited to GND)
Charge pump frequency changeover pin
9
TEST
S1
10
11
12
13
14
15
16
SV
DD
Small signal system V pin
DD
EN
FB
System enable pin (Hi active)
Regulator FB pin
RO
CPO
NC
Regulator output pin
Boost voltage output (3V
)
DD
No.A1117-3/6
LV5710V
Block Diagram
RO
FB
PV
DD
1μF
4.7μF
PGND
vref
CPO
1μF
SV
DD
bandgap
voltage
Timing
Control
Step-Up
Circuit
1μF
reference
C2P
C1P
SGND
S0
2bit MUX
Divider
0.22μF
S1
C1M
C2M
2MHz
OSC
EN
active
Sequence Control Block
Equivalent Circuit Diagram
PV
M1
M2
M3
C2P
DD
+3V
IN
V
= 4.5V to
5.5V
IN
C1P
CPO
Vref
+
-
+
-
+
2V
V
IN
IN
3V
VOUT
IN
-
RO
FB
C1M
CLK
C2M
No.A1117-4/6
LV5710V
Output Voltage Setting Method
The output voltage of IC-incorporated LDO can be determined as follows :
R1+R2
R2
VH =
× VREF
For example, to set the output voltage to 12V, set the resistance
Value to R1 = 1070kΩ/R2 = 130kΩ.
CPO
RO
R1
FB
R2
VREF = 1.3V
Short-circuit Protective Operation
The RO output pin has the short-circuit protective function.
The over-current detector circuit outputs the detection signal when the output current of 50mA (typ) or more flows or
when the output voltage drops below 87.5% (typ). When this detection signal is output continuously for 18ms (typ) or
more, IC determines that there is over-current and stops the output. To reset from the stop state, set the EN pin to “L”,
then set the EN pin to “H” again.
CPO
RO
Output voltage
detection comparator
FB
-
+
0.875
× VREF
Short-circuit
+
-
detection signal
Output current
detection comparator
VREF
Equivalent circuit of the over-current detection circuit
Selecting the Frequency
According to the logic of S0 and S1, the charge pump operation frequency can be changed.
In the case of light load, the reactive power can be reduced by decreasing the operating frequency.
S0
L
S1
L
CP operating frequency
1MHz
H
L
L
500kHz
H
H
250kHz
H
125kHz
No.A1117-5/6
LV5710V
Startup sequence
Set EN = H after setting
Stop with EN = L or for over-
current protection
Never allow V
to decrease below
DD
4.5V till EN = L is established
V
= 4.5V or more
DD
V
DD
EN
Charge pump
output CPO
Regulator
output RO
Frequency selection
Frequency selection
Do not allow the signal to change
Do not allow the signal to change
Frequency selection
Frequency selection
Do not allow the signal to change
Do not allow the signal to change
Frequency selection
Frequency selection
S0
S1
* CP clock 1MHz
* CP clock 500kHz
* CP clock 250kHz
* CP clock 125kHz
* IC internal signal
Start at 1MHz
Steady operation
Start at 1MHz
Steady operation
SS end
10ms (max)
SS end
10ms (max)
EN Pin and V
DD
The sequence operation is made at startup. However, startup is not made when the internal circuit has not been reset.
To reset the internal circuit, keep the EN pin to “L” till V becomes 4.5V or more.
DD
and EN pin cannot be short-circuited for this purpose.
Note that V
DD
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted
in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
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and all semiconductor products fail with some probability. It is possible that these probabilistic failures
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so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
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This catalog provides information as of March, 2008. Specifications and information herein are subject
to change without notice.
PS No.A1117-6/6
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