ENA1291 [SANYO]
PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications; PNP外延平面硅晶体管大电流开关应用
| 型号： | ENA1291 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications |
| 文件： | 总4页 (文件大小：236K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1291
SANYO Sem iconductors
DATA S HEET
PNP Epitaxial Planar Silicon Transistor
MCH6123
High-Current Switching Applications
Applications
•
DC-DC converter, relay drivers, lamp drivers, motor drivers.
Features
•
•
•
•
•
•
Adoption of MBIT process.
High current capacitance.
Low collector-to-emitter saturation voltage.
High speed switching.
Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm).
High allowable power dissipation.
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
-50
-50
-50
-6
CBO
V
V
CES
V
V
CEO
V
V
EBO
I
C
-3
A
Collector Current (Pulse)
Base Current
I
-6
A
CP
I
B
-600
1
mA
W
Collector Dissipation
Junction Temperature
Storage Temperature
P
When mounted on ceramic substrate (600mm2 0.8mm)
×
C
Tj
150
C
C
°
°
Tstg
-55 to +150
Marking : AZ
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
www.semiconductor-sanyo.com/network
No. A1291-1/4
O0808EA TI IM TC-00001609
MCH6123
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
I
V
= -40V, I =0A
-1
-1
A
A
μ
CBO
CB E
I
V
= -4V, I =0A
μ
EBO
EB C
h
V
CE
= -2V, I = -100mA
200
560
FE
C
Gain-Bandwidth Product
Output Capacitance
f
V
= -10V, I = -500mA
390
24
MHz
pF
mV
mV
V
T
CE C
Cob
V
CB
= -10V, f=1MHz
V
(sat)1
(sat)2
(sat)
I
C
= -1A, I = -50mA
-115
-240
-0.88
-230
-650
-1.2
CE
B
Collector-to-Emitter Saturation Voltage
V
I = -2A, I = -100mA
C B
CE
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
V
I = -2A, I = -100mA
C B
BE
V
I
C
= -10 A, I =0A
-50
-50
-50
-6
V
μ
(BR)CBO
E
V
I
C
= -100 A, R
=
V
μ
0Ω
(BR)CES
BE
V
I
C
= -1mA, R =
BE
V
∞
(BR)CEO
V
I = -10 A, I =0A
E
V
μ
(BR)EBO
C
t
t
t
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
30
230
18
ns
on
Storage Time
ns
stg
f
Fall Time
ns
Package Dimensions
unit : mm (typ)
Switching Time Test Circuit
7022A-007
I
B1
PW=20μs
D.C.≤1%
OUTPUT
I
B2
2.0
0.15
INPUT
R
B
V
R
6
5
4
3
R
L
50Ω
0 to 0.02
+
+
100μF
470μF
1
2
V
BE
=5V
V
CC
= --25V
0.65
0.3
--10I 1=10I 2=I =--1A
B
B
C
1 : Collector
2 : Collector
3 : Base
4 : Emitter
5 : Collector
6 : Collector
1
2
5
3
4
SANYO : MCPH6
6
I
-- V
CE
I
-- V
BE
C
C
--2.0
--1.8
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--3.0
--2.5
--2.0
--1.5
--1.0
V
= --2V
CE
--2mA
--0.5
0
--0.2
0
I =0mA
B
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT04566
Collector-to-Emitter Voltage, V
CE
-- V IT04564
Base-to-Emitter Voltage, V -- V
BE
No. A1291-2/4
MCH6123
h
-- I
f
-- I
T C
FE
C
1000
1000
V
= --10V
V
= --2V
CE
CE
7
7
5
5
3
2
3
2
100
7
5
100
7
5
3
2
3
5
7
2
3
5
7
2
3
5
2
3
5
7
2
3
5
7
--1.0
2
3
5
--0.01
--0.1
--1.0
--0.01
--0.1
IT04568
Collector Current, I -- A
IT04570
Collector Current, I -- A
C
C
Cob -- V
CB
V
CE
(sat) -- I
C
100
5
f=1MHz
I
/ I =20
B
C
3
2
7
5
--1000
7
5
3
2
3
2
--100
7
5
3
2
10
--10
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
--10
--1.0
--10
--100
IT04572
--0.01
--0.1
--1.0
IT04574
Collector-to-Base Voltage, V
CB
-- V
Collector Current, I -- A
C
V
CE
(sat) -- I
V
BE
(sat) -- I
C
C
3
2
7
5
I
/ I =50
B
I
/ I =50
B
C
C
3
2
--1000
7
5
--1.0
3
2
7
5
--100
7
5
3
2
--10
--0.01
3
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
--0.1
--1.0
--10
--0.01
--0.1
--1.0
--10
IT04578
Collector Current, I -- A
Collector Current, I -- A
IT04576
C
C
A S O
P
-- Ta
C
--10
7
5
1.2
I
= --6A
<10μs
When mounted on ceramic substrate
CP
(600mm2
×
0.8mm)
I = --3A
C
1.0
0.8
0.6
0.4
3
2
--1.0
7
5
3
2
--0.1
7
5
0.2
0
3
2
Ta=25°C
Single pulse
When mounted on ceramic substrate (600mm2×0.8mm)
--0.01
--0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
0
20
40
60
80
100
120
140
160
--0.1
--1.0
--10
-- V IT13928
Collector-to-Emitter Voltage, V
Ambient Temperature, Ta -- °C
IT13929
CE
No. A1291-3/4
MCH6123
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
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adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
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In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be
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party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of October, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1291-4/4
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