ENN8179 [SANYO]
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications; N沟道和P沟道MOSFET的硅通用开关设备的应用
| 型号： | ENN8179 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications |
| 文件： | 总6页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENN8179
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
ECH8608
Features
• The ECH8608 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
ultrahigh-speed switching, thereby enabling high-density mounting.
• 2.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
N-channel
20
P-channel
--20
Unit
V
V
DSS
GSS
V
±10
6
±10
--4
V
I
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
I
PW≤10µs, duty cycle≤1%
40
--40
A
DP
P
D
Mounted on a ceramic board (900mm2✕0.8mm)1unit
Mounted on a ceramic board (900mm2✕0.8mm)
1.3
1.5
150
W
W
°C
°C
P
T
Channel Temperature
Storage Temperature
Tch
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0
20
V
µA
µA
V
(BR)DSS
D GS
I
V
V
V
V
=20V, V =0
GS
1
DSS
DS
GS
DS
DS
I
=±8V, V =0
DS
±10
GSS
V
(off)
GS
=10V, I =1mA
0.5
7
1.3
D
Forward Transfer Admittance
yfs
=10V, I =3A
10
22
S
D
R
(on)1
DS
I
D
I
D
=3A, V =4V
GS
30
44
mΩ
mΩ
pF
pF
pF
Static Drain-to-Source On-State Resistance
R
(on)2
DS
=1.5A, V =2.5V
GS
30
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : FA
Ciss
V
V
V
=10V, f=1MHz
DS
=10V, f=1MHz
DS
=10V, f=1MHz
DS
780
300
150
Coss
Crss
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Sem iconductor Com pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11205PE TS IM TB-00001088
No.8179-1/6
ECH8608
Continued from preceding page.
Ratings
typ
Parameter
Symbol
t (on)
Conditions
Unit
min
max
Turn-ON Delay Time
Rise Time
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
19
ns
ns
ns
ns
nC
nC
nC
V
d
t
r
134
90
Turn-OFF Delay Time
Fall Time
t (off)
d
t
94
f
Total Gate Charge
Qg
Qgs
Qgd
V
V
V
=10V, V =10V, I =6A
GS
23
DS
DS
DS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
=10V, V =10V, I =6A
GS
1.6
3.6
0.84
D
=10V, V =10V, I =6A
GS
D
V
SD
I =6A, V =0
S
1.2
GS
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=--1mA, V =0
--20
V
µA
µA
V
(BR)DSS
D
GS
=--20V, V =0
I
V
V
V
V
--1
±10
--1.3
DSS
DS
GS
DS
DS
GS
I
=±8V, V =0
DS
GSS
V
(off)
GS
=--10V, I =--1mA
--0.4
4.9
D
Forward Transfer Admittance
yfs
=--10V, I =--2A
7
37
S
D
R
(on)1
DS
I
D
I
D
=--2A, V =--4.5V
GS
54
87
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Static Drain-to-Source On-State Resistance
R
(on)2
DS
=--1A, V =--2.5V
GS
58
Input Capacitance
Ciss
V
V
V
=--10V, f=1MHz
DS
=--10V, f=1MHz
DS
=--10V, f=1MHz
DS
800
210
160
17
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
t (on)
d
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
t
r
197
88
Turn-OFF Delay Time
Fall Time
t (off)
d
t
128
21
f
Total Gate Charge
Qg
Qgs
Qgd
V
V
V
=--10V, V =--10V, I =--4A
GS
DS
DS
DS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
=--10V, V =--10V, I =--4A
GS
1.4
D
=--10V, V =--10V, I =--4A
3.2
GS
D
V
SD
I =--4A, V =0
S GS
--0.82
--1.2
Package Dimensions
unit : mm
Electrical Connection
2206B
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
8
7
6
5
0.3
0.15
8
5
1
4
0.65
1
2
3
4
Top view
2.9
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
No.8179-2/6
ECH8608
Switching Time Test Circuit
[N-channel]
[P-channel]
V
=10V
DD
V
= --10V
DD
V
V
IN
IN
4V
0V
0V
--4.5V
I
=3A
I = --4A
D
R =2.5Ω
L
D
V
V
IN
IN
R =3.3Ω
L
D
V
D
V
OUT
OUT
PW=10µs
D.C.≤1%
PW=10µs
D.C.≤1%
G
G
ECH8608
ECH8608
P.G
P.G
50Ω
50Ω
S
S
[Nch]
[Pch]
I
-- V
I
-- V
DS
D
DS
D
10
--5.0
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
9
8
7
6
5
4
3
2
1.5V
= --1.0V
V
GS
1
0
--0.5
0
V
=1.0V
GS
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source Voltage, V
-- V
Drain-to-Source Voltage, V -- V
DS
IT04385
IT04367
DS
[Nch]
[Pch]
I
-- V
I -- V
D
GS
D GS
10
9
--10
--9
--8
--7
--6
--5
--4
--3
--2
V
= --10V
V
=10V
DS
DS
8
7
6
5
4
3
2
1
0
--1
0
0
0.5
1.0
1.5
2.0
IT04386
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
Gate-to-Source Voltage, V
-- V
Gate-to-Source Voltage, V -- V
GS
IT04368
GS
No.8179-3/6
ECH8608
[Nch]
Ta=25°C
[Pch]
R
(on) -- V
R (on) -- V
DS GS
DS
GS
70
60
50
40
30
70
60
50
40
30
20
Ta=25°C
--2A
I = --1A
D
I =3A
D
1.5A
20
10
10
0
0
2
4
6
8
10
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
Gate-to-Source Voltage, V
-- V
Gate-to-Source Voltage, V
-- V
IT04387
IT04369
GS
GS
[Nch]
[Pch]
R
DS
(on) -- Ta
R
DS
(on) -- Ta
50
45
40
35
30
25
20
15
10
90
80
70
60
50
40
30
20
5
0
--50
--25
0
25
50
75
100
125
150
--60 --40 --20
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
IT04388
Ambient Temperature, Ta -- °C
IT04370
[Nch]
[Pch]
yfs -- I
yfs -- I
D
D
5
5
V
=10V
V
=
--10V
DS
DS
3
2
3
2
10
10
7
5
7
5
3
2
3
2
1.0
1.0
7
5
7
5
2
3
5
7
2
3
5
7
2
2
3
5
7
2
3
5
7
2
0.1
1.0
10
--0.1
--1.0
--10
Drain Current, I -- A
Drain Current, I -- A
IT04389
IT04371
D
D
[Nch]
=0
[Pch]
=0
I
-- V
I
-- V
F SD
F
SD
3
2
3
2
V
V
GS
GS
10
--10
7
7
5
5
3
2
3
2
1.0
--1.0
7
7
5
5
3
2
3
2
0.1
--0.1
7
7
5
5
3
2
3
2
0.01
--0.01
7
7
5
5
3
2
3
2
0.001
0.2
--0.001
--0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
Diode Forward Voltage, V
-- V
Diode Forward Voltage, V
-- V
IT04390
IT04372
SD
SD
No.8179-4/6
ECH8608
[Nch]
=10V
=4V
[Pch]
SW Time -- I
SW Time -- I
D
D
7
5
5
V
V
V
V
= --10V
= --4.5V
DD
GS
DD
GS
3
2
3
2
100
t
f
100
7
5
7
5
3
2
3
2
t (on)
d
t (on)
d
10
10
0.1
7
--0.1
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
1.0
10
--1.0
Drain Current, I -- A
Ciss, Coss, Crss -- V
Drain Current, I -- A
D
Ciss, Coss, Crss -- V
IT04391
IT04373
D
[Nch]
[Pch]
DS
DS
3
2
3
2
f=1MHz
f=1MHz
1000
1000
7
5
7
5
3
2
3
2
100
100
7
5
7
0
2
4
6
8
10
12
14
16
18
20
0
--2
--4
--6
--8
--10 --12 --14 --16 --18 --20
Drain-to-Source Voltage, V
-- V
Drain-to-Source Voltage, V -- V
DS
IT04392
IT04374
DS
[Nch]
[Pch]
V
-- Qg
V
-- Qg
GS
GS
10
9
--10
--9
--8
--7
--6
--5
--4
--3
--2
V
I =6A
D
=10V
V
= --10V
DS
DS
I = --4A
D
8
7
6
5
4
3
2
1
0
--1
0
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
20
22
Total Gate Charge, Qg -- nC
Total Gate Charge, Qg -- nC
IT04393
IT04375
[Pch]
[Nch]
A S O
A S O
100
7
5
--100
7
5
I
=40A
I
= --40A
<10µs
<10µs
DP
DP
3
2
3
2
10
7
5
--10
7
5
I =6A
D
I = --4A
D
3
2
3
2
1.0
7
5
--1.0
7
5
3
2
3
2
Operation in this
area is limited by R (on).
Operation in this
area is limited by R (on).
DS
DS
0.1
7
5
--0.1
7
5
Ta=25°C
Ta=25°C
3
2
3
2
Single pulse
Single pulse
Mounted on a ceramic board(900mm2✕0.8mm) 1unit
Mounted on a ceramic board(900mm2✕0.8mm) 1unit
0.01
0.01
--0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
2
3
5
7
2
3
5
7
2
3
5
7
--10
2
3
0.1
1.0
10
--0.01
--0.1
--1.0
Drain-to-Source Voltage, V
-- V
Drain-to-Source Voltage, V -- V
DS
IT04394
IT04376
DS
No.8179-5/6
ECH8608
P
-- Ta
D
1.8
1.6
1.5
1.4
1.3
1.2
1.0
0.8
0.6
0.4
0.2
0
Mounted on a ceramic board(900mm2✕0.8mm)
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT04377
Note on usage : Since the ECH8608 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2005. Specifications and information herein are subject
to change without notice.
PS No.8179-6/6
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