FC114 [SANYO]
NPN Epitaxial Planar Silicon Composite Transistor Switching Applications; NPN外延平面硅晶体管复合开关应用
| 型号： | FC114 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | NPN Epitaxial Planar Silicon Composite Transistor Switching Applications |
| 文件： | 总2页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number:EN3082
FC114
NPN Epitaxial Planar Silicon Composite Transistor
Switching Applications
Features
Package Dimensions
unit:mm
· On-chip bias resistors (R =10kΩ, R =10kΩ)
1
2
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
2067
[FC114]
· The FC114 is formed with two chips, being equiva-
lent to the 2SC3398, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Electrical Connection
E1:Emitter1
B1:Base1
C2:Collerctor2
E2:Emitter2
B2:Base2
C1:Collerctor1
SANYO:CP6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
V
V
50
50
CBO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
V
V
CEO
V
10
V
EBO
I
100
200
200
300
150
mA
mA
mW
mW
˚C
C
Collector Current (Pulse)
Collector Dissipation
Total Dissipation
I
CP
P
C
P
T
1 unit
Junction Temperature
Storage Temperature
Tj
Tstg
–55 to+150
˚C
Electrical Characteristics at Ta = 25˚C
Ratings
typ
Parameter
Collector Cutoff Current
Symbol
Conditions
Unit
min
max
0.1
I
I
V
V
V
V
V
V
I
=40V, I =0
µA
µA
µA
CBO
CEO
CB
CE
EB
CE
CE
CB
E
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
=40V, I =0
B
=5V, I =0
C
=5V, I =10mA
C
=10V, I =5mA
C
0.5
I
170
250
360
EBO
h
50
FE
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
Input OFF-State Voltage
Input ON-State Voltage
Input Resistance
f
250
3.3
0.1
MHz
pF
V
T
Cob
=10V, f=1MHz
V
=10mA. I =0.5mA
B
=10µA, I =0
E
0.3
CE(sat)
C
V
V
I
50
50
V
(BR)CBO
(BR)CEO
C
C
I
=100µA, R =∞
V
BE
V
V
=5V, I =100µA
0.8
1.0
7.0
0.9
1.1
2.0
10
1.5
4.0
13
V
I(off)
CE
CE
C
V
V
=0.2V, I =10mA
C
V
I(on)
R
1
kΩ
Resistance Ratio
R /R
1.0
1.1
1
2
Note: The specifications shown above are for each individual transistor.
Marking:114
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/4139MO, TS No.3082-1/2
FC114
Sample Application Circuit
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.3082-2/2
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