FC134
更新时间：2024-09-18 02:15:38
品牌：SANYO
描述：NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)
概述
数据手册FC134 概述
NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) NPN外延平面硅晶体管复合开关应用（与偏置电阻）
FC134 数据手册
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PDF下载Ordering number:EN3288
FC134
NPN Epitaxial Planar Silicon Composite Transistor
Switching Applications
(with Bias Resistance)
Features
Package Dimensions
unit:mm
· On-chip bias resistances (R1=10kΩ, R2=47kΩ)).
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
2066
[FC134]
· The FC134 is formed with two chips, being equiva-
lent to the 2SC4047, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Electrical Connection
C1:Collector 1
C2:Collector 2
B2:Base 2
C1:Collector 1
C2:Collector 2
B2:Base 2
EC:Emitter Common
B1:Base 1
EC:Emitter Common
B1:Base 1
SANYO:CP5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
V
50
50
V
V
CBO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
V
CEO
V
6
V
EBO
I
100
200
200
300
150
mA
mA
mW
mW
˚C
C
Peak Collector Current
Collector Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
I
CP
P
C
P
T
Tj
1 unit
Tstg
–55 to +150
˚C
Electrical Characteristics at Ta = 25˚C
Ratings
typ
Parameter
Symbol
Conditons
Unit
min
max
0.1
Collector Cutoff Current
I
I
V
V
V
V
V
V
I
=40V, I =0
µA
µA
µA
CBO
CEO
CB
CB
EB
CE
CE
CB
E
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
=40V, I =0
E
=5V, I =0
C
=5V, I =5mA
C
=10V, I =5mA
C
0.5
I
67
88
125
EBO
h
70
FE
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
Input OFF-State Voltage
Input ON-State Voltage
Input Resistance
f
250
3.3
0.1
MHz
pF
V
T
Cob
=10V, f=1MHz
V
=10mA, I =0.5mA
B
=10µA, I =0
E
0.3
CE(sat)
C
V
V
I
I
50
50
V
(BR)CBO
C
C
=100µA, R =∞
V
(BR)CEO
BE
V
V
=5V, I =100µA
0.5
0.7
1.0
0.9
2.0
V
I(off)
CE
CE
C
V
V
=0.2V, I =5mA
C
0.7
V
I(on)
R1
7
10
13
kΩ
Resistance Ratio
R1/R2
0.193
0.213
0.234
Note:The specifications shown above are for each individual transistor.
Marking:134
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/2190MO, TS No.3288-1/2
FC134
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.3288-2/2
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