LB11980H [SANYO]
Monolithic Digital IC For VCR Capstan Three-Phase Brushless Motor Driver; 单片数字IC，用于VCR绞盘三相无刷电机驱动器
| 型号： | LB11980H |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | Monolithic Digital IC For VCR Capstan Three-Phase Brushless Motor Driver |
| 文件： | 总11页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN8798
Monolithic Digital IC
For VCR Capstan
LB11980H
Three-Phase Brushless Motor Driver
Overview
LB11980H is a 3-phase brushless motor driver optimal for driving the VCR capstan motors.
Features
• 3-Phase full-wave current-linear drive system.
• Torque ripple correction circuit built-in.(correction factor variable)
• Current limiter circuit built in.
• Output stage upper/lower over-saturation prevention circuit built in. (No external capacitor required)
• FG amplifier built in.
• Thermal shutdown circuit built in.
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Conditions
Ratings
Unit
V
Maximum supply voltage
V
max
7
25
CC
VS max
V
Maximum output current
I
max
1.3
A
O
Allowable power dissipation
Pd max
Mounted on a specified board *
Independent IC
1.81
0.77
W
W
°C
°C
Operating temperature
Storage temperature
Topr
Tstg
-20 to +75
-55 to +150
* Mounted on a specified board: 114mm×71.1mm×1.6mm, glass epoxy board
Allowable Operating Range at Ta = 25°C
Parameter
Supply voltage
Symbol
VS
Conditions
Ratings
Unit
5 to 24
4.5 to 5.5
V
V
V
CC
Hall input amplitude
GSENSE input range
VHALL
Between hall inputs
With respect to the control system ground
±30 to ±80
mVo-p
V
VGSENSE
-0.20 to +0.20
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
D2706 MS IM B8-5775 No.8798-1/11
LB11980H
Electrical Characteristics at Ta = 25°C, V
= 5V, VS = 15V
CC
Ratings
typ
Parameter
Symbol
Conditions
Unit
mA
min
max
18
V
supply current
I
12
R
= ∞, VCTL = 0, VLIM = 0V (Quiescent)
= 500mA, Rf = 0.5Ω, sink+source
O
VCTL = VLIM = 5V (With saturation prevention)
= 1.0A, Rf = 0.5Ω, sink+source
CC
CC
L
Output
Output saturation voltage
V
V
I
sat1
sat2
I
2.1
2.6
2.6
3.5
1.0
V
V
O
I
O
O
VCTL = VLIM = 5V (With saturation prevention)
Output leakage current
FR
leak
mA
O
FR pin input threshold voltage
FR pin input input bias current
Control
VFSR
1.0
1.25
150
2
V
Ib (FSR)
VFR = 3V
100
200
µA
CTL pin input Input bias current
CTL pin input motor current
CTL pin control start voltage
Ib (CTL)
Imctl
VCTL = 5V
VCTL = 0V
1.5
3
5
µA
mA
V
VCTL (ST)
Rf = 0.5Ω, VLIM = 5V, I ≥ 10mA
2.25
0.86
2.50
1.06
2.75
O
Hall input logic fixed (U, V, W = H, H, L)
CTL pin control Gm
Gm (CTL)
Rf = 0.5Ω, ∆I = 200mA
1.26
A/V
O
Hall input logic fixed (U, V, W = H, H, L)
Current limit
LIM pin input current
LIM pin motor current
LIM current limit offset voltage
Ilim
VLIM = 3V
VLIM = 0V
1.5
3
5
µA
mA
V
Imlim
Voff (LIM)
Rf = 0.5Ω, VCTL = 5V, I ≥ 10mA
1.0
1.25
0.71
1.5
O
Hall input logic fixed (U, V, W = H, H, L)
LIM pin control Gm
Gm (lim)
Rf = 0.5Ω, VCTL = 5V
0.59
0.83
+6
A/V
mV
Hall input logic fixed (U, V, W = H, H, L)
Hall amplifier
Hall amplifier input offset voltage
VOFF
(HALL)
-6
Hall amplifier input bias current
Ib (HALL)
1.0
3.0
3.3
µA
Hall amplifier common-mode
VCM (HALL)
1.3
V
input voltage
TRC
Torque ripple correction ratio
TRC
For the high and low peaks in the Rf waveform when
13
%
V
I
= 200mA
O
(Rf = 0.5Ω, ADJ-OPEN) Note.2
ADJ pin voltage
VADJ
2.37
2.50
2.63
+8
FG Amplifier
FG amplifier input offset voltage
FG amplifier input bias current
VOFF (FG)
Ib (FG)
-8
mV
nA
V
-100
FG amplifier output saturation
voltage
V
sat (FG)
Sink side; With internal pull-up resistance load
For open loop at f = 10kHz
0.5
0.6
O
FG amplifier voltage gain
VG (FG)
41.5
0.5
44.5
47.5
4.0
dB
V
FG amplifier common-mode input
voltage
VCM (FG)
Schmitt amplifier
Duty ratio
DUTY
Under specified conditions (RF = 39kΩ) Note 3
49.0
4.8
50
51.0
%
V
Upper side output saturation voltage
Lower side output saturation voltage
Hysteresis width
Vsatu (SH)
Vsatd (SH)
Vhys
I
I
= -20µA
= 100µA
O
O
0.2
60
V
32
46
mV
kΩ
FGS output pin pull-up resistance
Saturation
RFGout
4.7
Saturation prevention circuit
lower set voltage
TSD
V
sat
Voltage between each OUT and Rf with
I = 10mA, Rf = 0.5Ω, VCTL = VLIM = 5V
O
0.175
0.25
180
0.325
V
O
(DET)
TSD operating temperature
T-TSD
(Design target) Note.1
°C
Note 1. No measurements are made on the parameters with Note (Design target).
No.8798-2/11
LB11980H
Note 2. The torque ripple compensation ratio is determined as follows from the Rf voltage waveform.
Vp
Vb
V
III
IV
VI
II
I
Each hall logic setting
GND level
2* (Vp - Vb)
Vp + Vb
Correnction ratio =
100* (%)
Note 3. Apply the sine wave of 1kHz, 20mVP-P under conditions with a sample circuit installed externally as shown
above.
Package Dimensions
unit : mm (typ)
3233B
15.2
(6.2)
28
15
1
14
0.8
0.25
(0.8)
2.0
0.3
2.7
SANYO : HSOP28H(375mil)
Pd max - Ta
2.0
1.8
Mounted on a specified board
(114mm×71.1mm×1.6mm
1.81
glass epoxy)
1.6
1.4
1.2
1.09
0.46
Independent IC
1.0 0.77
0.8
0.6
0.4
0.2
0
-20
0
20 25
40
60
75 80
100
ILB01492
Ambient temperature, Ta - °C
No.8798-3/11
LB11980H
Pin Assignment
W
1
2
3
4
5
6
7
28
27
V
OUT
OUT
NC
U
OUT
NC
RF
26 NC
25 NC
24 RF
23 ADJ
22 VS
GSENSE
FR
GND
FRAME GND
FRAME GND
LB11980H
FG
-
8
9
21
V
CC
IN
FG
+
20 HW-
19 HW+
18 HV-
17 HV+
16 HU-
15 HU+
IN
FG
OUT
10
FGS 11
CTL 12
LIM 13
FC 14
Top view
No.8798-4/11
LB11980H
Block Diagram
Output stage
12
FC
VS
U
+
IN
U
V
U-OUT
U
V
U
-
IN
Logarithmic
inverse
V
+
IN
V-OUT
transformation
V
-
IN
W-OUT
W
W
+
IN
Rf (PWR)
W
W
-
Upper saturation
prevention control
IN
gm
Rf (SENSE)
gm
Drive distribution circuit &
lower saturation
prevention control
Differential distribution and
torque ripple correction block
ADJ
Control amplifier
CTL
Feedback amplifier
Approx.1/2V
CC
LIMREF
GSENSE
LIM
FR
Forward/
reverse
selection
FG amplifier
FG
FG
+
-
IN
TSD
IN
FG
OUT
GND
FGS
Reference
voltage
V
CC
Bandgap 1.25V
No.8798-5/11
LB11980H
Truth Table and Control Function
Hall input
Source → Sink
FR
U
H
V
H
W
L
V → W
W → V
U → W
W → U
U → V
V → U
W → V
V → W
W → U
U → W
V → U
U → V
H
1
2
3
4
5
6
L
H
H
H
L
L
L
L
L
H
H
L
H
L
H
L
H
L
H
H
H
L
H
L
L
L
Note: “H” in the FR column represents a voltage of 2.75V or more. “L” represents a voltage of 2.25V or less.
(At V = 5V)
CC
Note: “H” under the Hall Input columns represents a state in which “+” has a potential which is higher by 0.01V or
more than that of the “-” phase inputs. Conversely “L” represents a state in which “+” has a potential which is
lower by 0.01V or more than that of the “-” phase inputs.
Note: Since a 180° energized system is used as a drive system, other phases than the sink and source are not OFF.
[Control Function & Current Limiter Function]
Control characteristics VLIM = 5V
Current limiter characteristics VCTL = 5V
1OUT
1OUT
Gm = 1.06A/Vtyp
2.50Vtyp
Slope = 0.71A/Vtyp
VLIM
VCTL
0
2
3
4
5
0
1
2
3
4
1
1.25Vtyp
No.8798-6/11
LB11980H
Pin Functions
Pin name
Pin no
Functions
FR
6
Forward/reverse select pin.
This pin voltage determines forward/reverse. (Vth = 1.25V TYP at V
= 5V)
CC
GND
7
8
GND for others than the output transistor.
Minimum potential of output transistor is at Rf pin.
FG (-)
IN
Input pin for the FG amplifier to be used with inverted input.
A feedback resistor is connected between this pin and FG OUT.
FG (+)
IN
9
Non-inverted input pin for the FG amplifier to be used as differential input.
No bias is applied internally.
FG-OUT
CTL
10
12
13
FG amplifier output pin.
Resistive load provided internally.
Speed control pin. Control is performed by means of constant current drive which is applied by current feedback from Rf.
Gm = 1.06A/VTYP at Rf = 0.5Ω
LIM
Current limiter function control pin.
This pin voltage is capable of varying the output current linearly.
Slope = 0.71A/VTYP at Rf = 0.5Ω
FC
14
Speed control loop’s frequency characteristics correction pin.
U
+, U
-
IN
-
15, 16
17, 18
19, 20
U-phase Hall device input pin; logic “H” presents IN+>IN-
V-phase Hall device input pin; logic “H” presents IN+>IN-
W-phase Hall device input pin; logic “H” presents IN+>IN-
IN
IN
IN
V
+, V
IN
W
+, W -
IN
V
21
Power supply pin for supplying power to all circuits expect output section in IC; this voltage must be stabilized so as to
eliminate ripple and noise.
CC
VS
22
23
Power supply pin for supplying power to output section in IC.
ADJ
Pin to be used to adjust the torque ripple correction factor externally.
When adjusting the correction factor, apply voltage externally to the ADJ pin through a low impedance.
Increasing the applied voltage decreases the correction factor; lowering the applied voltage increases the correction
factor.
The rate of change, when left open, ranges approximately from 0 to 2 times.
(Approximately V /2 is set internally and the input impedance is approximately 5kΩ.)
CC
Rf (PWR)
Rf (SNS)
24
4
Output current detection pins. Current feedback is provided to the control blocks by connecting Rf between the pins and
GND. The operation of the lower over-saturation prevention circuit and torque ripple correction circuit depends on the pin
voltage. In particular, since the oversaturation prevention level is set by the pin voltage, decreasing the Rf value
extermely may cause the lower over-saturation prevention to work less efficiently in the large current region. The PWR
pin and SENSE pin must be connected.
FGS
11
FG Schmidt amp output pin, that is pulled up with 4.7kΩ.
U
27
28
1
U-phase output pin.
OUT
V
V-phase output pin. (Built-in spark killer diode)
W-phase output pin.
OUT
W
OUT
GSENSE
5
GND sensing pin.
By connecting this pin to GND in the vicinity of the Rf resistor side of the Rf included motor GND wiring, the influence
that the GND common impedance exerts on Rf can be excluded. (Must not be left open.)
No.8798-7/11
LB11980H
Each Input/Output Equivalent Circuit
Pin No.
Pin name
Input/Output equivalent circuit
15
16
17
18
19
20
U
(+)
(-)
IN
U
IN
V
(+)
(-)
IN
V
IN
Each (+) input
Each (-) input
W
(+)
(-)
IN
W
IN
200Ω
200Ω
27
28
1
U
V
OUT
VS
OUT
V
CC
W
OUT
VS
22
24
4
Rf (POWER)
Rf (SENSE)
Each OUT
Lower oversaturation prevention
circuit block
V
CC
200Ω
200Ω
Rf (SENSE)
Rf (POWER)
12
13
CTL
LIM
V
V
V
CC
CC
CC
CTL
200Ω
200Ω
LIM
200Ω
6
FR
V
V
V
CC
V
CC
CC
CC
23
ADJ
FR
ADJ
200Ω
6kΩ
500Ω
6kΩ
Continued on next page.
No.8798-8/11
LB11980H
Continued from preceding page.
Pin No.
Pin name
Input/output equivalent circuit
FG (-)
IN
FG (+)
IN
8
9
V
CC
FG (-)
IN
FG (+)
IN
300Ω
FG
10
14
OUT
FC
V
CC
V
V
CC
CC
FG
OUT
300Ω
FC
11
FGS
V
V
V
CC
CC
CC
FGS
300Ω
No.8798-9/11
LB11980H
Sample Application Circuit
1
2
3
4
5
6
7
W
V
U
28
27
OUT
OUT
NC
OUT
NC
NC 26
NC 25
RF 24
ADJ 23
VS 22
RF
GSENSE
FR
15V
GND
FRAME GND FRAME GND
V
CC
1µF
MR
8
9
FG
FG
-
V
21
CC
5V
IN
+
IN
HW- 20
HW+ 19
HV- 18
HV+ 17
HU- 16
HU+ 15
10 FG
OUT
FGS pulse output
11 FGS
12 CTL
13 LIM
14 FC
Torque instruction voltage supply pin
Current limiter setting voltage supply pin
HSOP28H
Top view
Note) The constant shown in this example is only for reference and does not guarantee the characteristics.
Connect a capacitor between power supply and GND and between Hall inputs as required.
No.8798-10/11
LB11980H
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted
in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual
property rights or other rights of third parties.
This catalog provides information as of December, 2006. Specifications and information herein are subject
to change without notice.
PS No.8798-11/11
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