LC35W256EM-10W [SANYO]
256K (32K words x 8 bits) SRAM Control pins: OE and CE; 256K （ 32K字× 8位） SRAM控制引脚： OE和CE
| 型号： | LC35W256EM-10W |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | 256K (32K words x 8 bits) SRAM Control pins: OE and CE |
| 文件： | 总6页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENN6304
CMOS IC
LC35W256EM, ET-10W
256K (32K words × 8 bits) SRAM
Control pins: OE and CE
Overview
Package Dimensions
unit: mm
The LC35W256EM-10W and LC35W256ET-10W are
asynchronous silicon-gate CMOS SRAMs with a 32768-
word by 8-bit structure. These are full-CMOS devices
with 6 transistors per memory cell, and feature ultralow-
voltage operation, a low operating current drain, and an
ultralow standby current. Control inputs include OE for
fast memory access and CE for power saving and device
selection. This makes these devices optimal for systems
that require low power or battery backup, and makes
memory expansion easy. The ultralow standby current
allows these devices to be used with capacitor backup as
well.
3187A-SOP28D
[LC35W256EM-10W]
0.15
15
28
1
14
18.0
0.4
Features
1.27
• Supply voltage range: 2.7 to 3.6 V
• Access time: 100 ns (maximum)
• Standby current: 0.8 µA (Ta ≤ 60°C)
4.0 µA (Ta ≤ 70°C)
• Operating temperature: –10 to +70°C
• Data retention voltage: 2.0 to 3.6 V
SANYO: SOP28D
unit: mm
3221-TSOP28 (Type I)
[LC35W256ET-10W]
• All I/O levels: CMOS compatible (0.8 V , 0.2 V
)
CC
CC
• Input/output shared function pins, 3-state output pins
• No clock required (fully static circuits)
• Package
21
8
28-pin SOP (450 mil) plastic package:
LC35W256EM-10W
28-pin TSOP (8 × 13.4 mm) plastic package:
LC35W256ET-10W
1
22
28
7
0.55
0.2
0.125
8.1
SANYO: TSOP28 (Type I)
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12800RM (OT) No. 6304-1/6
LC35W256EM, ET10W
Pin Assignment (Top view)
SOP28
TSOP28
OE
22
23
24
25
26
27
28
1
2
3
4
5
21
20
19
18
17
16
15
14
13
12
11
10
9
A
10
A
A
1
2
28 V
14
12
CC
A
CE
I/O
11
A
9
27 WE
8
A
8
I/O
I/O
I/O
I/O
7
6
5
4
A
A
A
A
A
A
A
A
3
26 A
13
A
WE
7
6
5
4
3
2
1
0
13
4
25 A
24 A
23 A
8
V
A
A
CC
14
12
GND
5
9
I/O
3
A
A
A
A
A
I/O
2
7
6
5
4
3
6
11
I/O
1
A
0
7
22 OE
21 A
6
7
A
1
8
A
2
8
10
9
20 CE
LC35W256ET-10W
10
19 I/O
18 I/O
17 I/O
16 I/O
15 I/O
8
7
6
5
4
I/O 11
1
I/O 12
2
I/O 13
3
GND 14
LC35W256EM-10W
Block Diagram
A
A
A
A
6
7
8
9
V
CC
Memory cell array
A
10
11
12
13
14
512 × 512
GND
A
A
A
A
Column I/O
circuit
I/O
I/O
Output
data
buffer
1
8
Column decoder
Address buffer
A
A A A A A
1 2 3 4 5
0
CE
WE
OE
No. 6304-2/6
LC35W256EM, ET10W
Pin Functions
A0 to A14
WE
Address input
Read/write control input
Output enable input
Chip enable input
Data I/O
OE
CE
I/O1 to I/O8
VCC, GND
Power supply, ground
Function Table
Mode
CE
L
OE
L
WE
H
I/O
Supply current
Read cycle
Write cycle
Output disable
Unselected
Data output
ICCA
ICCA
ICCA
ICCS
L
X
L
Data input
L
H
H
High impedance
High impedance
H
X
X
Specifications
Absolute Maximum Ratings
Parameter
Maximum supply voltage
Input pin voltage
Symbol
Conditions
Ratings
Unit
V
VCC max
VIN
4.6
–0.3* to VCC + 0.3
–0.3 to VCC + 0.3
–10 to +70
V
I/O pin voltage
VI/O
V
Operating temperature
Storage temperature
Topr
Tstg
°C
°C
–55 to +125
Note: * The minimum value is –2.0 V for pulse widths under 30 ns.
I/O Capacitances at Ta = 25°C, f = 1 MHz
Ratings
Parameter
Symbol
Conditions
Unit
min
typ
max
10
10
I/O pin capacitance
Input pin capacitance
CI/O
CI
VI/O = 0 V
VIN = 0 V
6
6
pF
pF
Note: All units are not tested; only samples are tested.
DC Allowable Operating Ranges at Ta = –10 to +70°C, V = 2.7 to 3.6 V
CC
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
2.7
max
Supply voltage
Input voltage
VCC
VIH
VIL
3.0
3.6
VCC + 0.3
0.2VCC
V
V
V
0.8VCC
–0.3*
Note: * The minimum value is –2.0 V for pulse widths under 30 ns.
No. 6304-3/6
LC35W256EM, ET10W
DC Electrical Characteristics at Ta = –10 to +70°C, V = 2.7 to 3.6 V
CC
Ratings
typ
Parameter
Input leakage current
Symbol
ILI
Conditions
Unit
µA
min
–1.0
max
+1.0
VIN = 0 to VCC
VCE = VIH or VOE = VIH or VWE = VIL
I/O = 0 to VCC
Output leakage current
Output high-level voltage
ILO
–1.0
+1.0
µA
V
VOH1
VOH2
VOL1
VOL2
ICCA2
IOH1 = –2.0 mA
V
V
– 0.4
– 0.1
V
V
CC
IOH2 = –100 µA
CC
IOL1 = 2.0 mA
0.4
0.4
1.2
18
V
Output low-level voltage
Operating current drain
IOL2 = 100 µA
V
VCE = VIL, II/O = 0 mA, VIN = VIH or VIL
mA
mA
mA
µA
µA
µA
mA
CMOS inputs
min cycle
15
1.5
VCE = VIL, VIN = VIH or VIL
II/O = 0 mA, DUTY 100 %
ICCA3
1 µs cycle
Ta ≤ 25°C
Ta ≤ 60°C
Ta ≤ 70°C
2.5
0.01
V
V
CE ≥ VCC – 0.2 V,
VCC – 0.2 V/
0.2 V inputs
Standby mode
current drain
ICCS1
0.8
4.0
0.4
IN = 0 to VCC
ICCS2
VCE = VIH, VIN = 0 to VCC
CMOS inputs
Note: * Reference values when VCC = 3 V and Ta = 25°C.
AC Electrical Characteristics at Ta = –10 to +70°C, V = 2.7 to 3.6 V
CC
AC test conditions
Input pulse voltage levels: 0.2 V to 0.8 V
CC
CC
Input rise and fall times: 5 ns
Input and output timing levels: 1/2 V
CC
Output load: 30 pF (including the jig capacitance)
Read Cycle
Parameter
Symbol
tRC
min
100
max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Read cycle time
Address access time
CE access time
tAA
100
tCA
100
50
OE access time
tOA
Output hold time
tOH
10
10
5
CE output enable time
OE output enable time
CE output disable time
OE output disable time
tCOE
tOOE
tCOD
tOOD
35
30
Write Cycle
Parameter
Symbol
tWC
min
max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write cycle time
100
0
Address setup time
Write pulse width
CE setup time
tAS
tWP
80
90
0
tCW
Write recovery time
CE write recovery time
Data setup time
tWR
tWR1
tDS
0
50
0
Data hold time
tDH
CE data hold time
WE output enable time
WE output disable time
tDH1
tWOE
tWOD
0
5
35
No. 6304-4/6
LC35W256EM, ET10W
Timing Charts
1
[Read cycle] *
t
RC
A
A
0 to 14
t
t
OH
AA
t
CA
CE
OE
t
t
t
COD
OOD
COE
t
OA
t
OOE
5
*
Output data valid
D
1 to 8
OUT
6
[Write cycle 1] (WE write) *
t
WC
A
A
0 to 14
4
t
*
CW
CE
3
t
*
t
t
WP
WR
AS
WE
t
t
WOE
WOD
5
*
*7
D
1to 8
OUT
t
t
DH
DS
D
1 to 8
Data in stable
*2
*2
IN
6
[Write cycle 2] (CE write) *
t
WC
A
A
0 to 14
4
*
t
t
CW
AS
CE
t
WR1
3
t
*
WP
WE
High impedance
5
*
D
1to 8
OUT
t
t
DH1
DS
D
1 to 8
Data in stable
IN
No. 6304-5/6
LC35W256EM, ET-10W
Notes:1. WE must be held at the high level during the read cycle.
2. Do not apply reverse phase signals to the DOUT pins when those pins are in the output state.
3. The time tWP is the period when both CE and WE are low. It is defined as the time from the fall of WE to the rise of CE or WE, whichever occurs
first.
4. The time tCW is the period when both CE and WE are low. It is defined as the time from the fall of CE to the rise of CE or WE, whichever occurs first.
5. The DOUT pins will be in the high-impedance state if any one of the following is held: OE is at the high level, CE is at the high level, or WE is at the
low level.
6. The OE pin must be either held high or held low during the write cycle.
7. DOUT has the same phase as the write data during this write cycle.
Data Retention Characteristics at Ta = –10 to +70°C
Parameter
Data retention supply voltage
Chip enable setup time
Symbol
VDR
Conditions
min
2.0
max
3.6
Unit
V
V
CE ≥ VCC – 0.2 V
tCDR
tR
0
ns
ns
Chip enable hold time
tRC*
Note: * tRC: Read cycle time
Data Retention Waveforms (CE control)
Data retention mode
t
t
R
CDR
V
CC
2.7 V
V
IH
V
DR
V
CE
V
≥ V
– 0.2 V
CC
CE
GND
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products (including technical data, services) described or contained
herein are controlled under any of applicable local export control laws and regulations, such products must
not be exported without obtaining the export license from the authorities concerned in accordance with the
above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification”
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of Januarly, 2000. Specifications and information herein are subject
to change without notice.
PS No. 6304-6/6
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