LV5106FN [SANYO]
Bi-CMOS IC For cell phone system Power supply; BI -CMOS IC，用于手机系统电源
| 型号： | LV5106FN |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | Bi-CMOS IC For cell phone system Power supply |
| 文件： | 总6页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN8931
Bi-CMOS IC
For cell phone system
LV5106FN
Power supply
Overview
The LV5106FN is a power supply for a cell phone system that integrates four series regulators, two de-writers, and an LED
driver (with 5V output) on a single chip.
Functions
• REG×4 (CMOS output)
• DET circuit (one for REG1, one for VBAT (with reset output)
• Thermal shutdown circuit (150°C)
• Three-color LED driver (charge pump 5V output incorporated)
• FRONT LED driver
• Mic bias output
Features
• Low power consumption
4μA when REG4 and VBATDET operate
30μA when REG1, REG2, REG3, and REG4 + DET1 and VBATDET operate
VBAT : 3.2V to 4.5V, 5V constant output with a load of 80mA
Three independent colors, 128-step PWM intensity control
• Built-in charge pump circuit
• Built-in 3-color LED drive circuit
Specifications
Maximum Ratings at Ta = 25°C
Parameter
Maximum supply voltage
Allowable power dissipation
Operating temperature
Storage temperature
Symbol
Conditions
Ratings
Unit
V
V
max
7
CC
Pd max
Ta ≤ 75°C *Mounted on a board.
440
mW
°C
Topr
Tstg
-30 to +75
-40 to +125
°C
∗ Mounted on a 50.0mm×50.0mm×0.8mm, glass epoxy board.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
61307 TI PC B8-6923 No.8931-1/6
LV5106FN
Operating Conditions at Ta = 25°C
Parameter
Supply voltage 1
Supply voltage 2
Symbol
Conditions
Ratings
Unit
V
VBAT
29, 33pin
3pin
3.2 to 4.5
3.2 to 5.9
VBATCP
V
Electrical Characteristics Ta = 25°C, VBAT = 3.6V, VCHARGE = 0V, unless otherwise specified.
Ratings
Parameter
Symbol
Conditions
Unit
min
typ
max
Analog :
Current dissipation
Current dissipation 1
I
1
REG4, VBATDET : ON
4
10
μA
CC
REG1, 2, 3, charge punp, DET1 : OFF no-load
VBAT = 3.2V to 4.2V
Current dissipation 2
Current dissipation 3
Current dissipation 4
Current dissipation 5
Current dissipation 6
I
I
I
I
I
2
3
4
5
6
REG1, 2, 4, DET1, VBATDET : ON
REG3, charge pump : OFF no load
REG3, 4, VBATDET : ON
25
20
30
15
5
35
28
42
21
8
μA
μA
μA
μA
mA
CC
CC
CC
CC
CC
REG1, 2, DET1, charge pump : OFF no load
REG1, 2, 3, 4, DET1, VBATDET : ON
charge pump : OFF no load
REG1, 2, 3, 4, DET1, VBATDET : ON
charge pump : OFF no load ECO : L
REG1, 2, 3, 4, charge pump, DET1, VBATDET :
ON no load
REG1
Output voltage 1
Output voltage 2
Output voltage 3
V
1
I
I
= 30mA, ECO = H
= 30mA, ECO = L
2.74
2.8
2.8
15
2.86
2.89
35
V
V
O
O
O
V
1E
2.71
0
O
ΔV
1
(I = 30mA, REG1 output voltage at ECO = H) -
O
(I = 10mA, REG1 output voltage at I = 10 mA
mV
O
O
O
O
and ECO = L)
Output voltage 4
ΔV
2
I
= 30mA
-35
35
mV
O
(charge-pump on-time REG1 output voltage) –
(charge-pump off-time REG1 output voltage)
Drop out voltage
Load regulation
Line regulation
VDR1
ΔV
VBAT = 2.7V, I = 30mA
O
0.04
10
0.06
50
V
mV
1
I
= 1 to 150mA
O
OLO
ΔV
1
VBAT = 3.3 to 4.5V, I = 1mA
10
60
mV
OLN
ΔV 1/ΔTj
O
Output voltage temperature
coefficient
Ta = -25 to 75°C, I = 30mA
100
ppm/°C
O
O
Ripple rejection
V
1
VBAT = 3.6V, I = 30mA, VRR = -20dBV,
O
65
75
dB
R
f
= 1kHz
RR
Output noise voltage
REG2
V
1
I
= 30mA, 20Hz < f < 20kHz
μVrms
ON
O
Output voltage 1
Output voltage 2
Drop out voltage
Load regulation
Line regulation
V
2
I
I
= 30mA, ECO = H
= 30mA, ECO = L
2.55
2.53
2.6
2.6
0.06
10
2.65
2.67
0.12
100
60
V
V
O
O
O
V
2E
O
VDR1
ΔV
VBAT = 2.5V, I = 30mA
V
O
2
I
= 1 to 100mA
O
mV
mV
ppm/°C
OLO
ΔV
2
VBAT = 3.3 to 4.5V, I = 1mA
10
OLN
ΔV 2/ΔTj
O
Output voltage temperature
coefficient
Ta = -25 to 75°C, I = 30mA
100
O
O
Ripple rejection
V
2
VBAT = 3.6V, I = 30mA, VRR = -20dBV,
O
65
75
dB
R
f
= 1kHz
RR
= 30mA, 20Hz < f < 20kHz
O
Output noise voltage
V
2
I
μVrms
ON
Continued on next page.
No.8931-2/6
LV5106FN
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
REG3
Output voltage 1
Output voltage 2
Drop out voltage
Load regulation
Line regulation
V
3
I
I
= 30mA, ECO = H
2.45
2.43
2.5
2.5
0.06
10
2.55
V
V
O
O
O
V
3E
= 30mA, ECO = L
2.57
0.12
50
O
VDR3
ΔV
VBAT = 2.4V, I = 30mA
V
O
3
I
= 1 to 50mA
O
mV
mV
ppm/°C
OLO
ΔV
3
VBAT = 3.3 to 4.5V, I = 1mA
10
60
OLN
ΔV 3/ΔTj
O
Output voltage temperature
coefficient
Ta = -25 to 75°C, I = 30mA
100
O
O
Ripple rejection
V
3
VBAT = 3.6V, I = 30mA, VRR = -20dBV,
O
65
75
dB
R
f
= 1kHz
RR
Output noise voltage
REG4
V
3
I
= 30mA, 20Hz < f < 20kHz
μVrms
ON
O
Output voltage
Drop out voltage
Load regulation
Line regulation
V
4
I
= 30mA
2.91
3
0.06
10
3.09
0.12
50
V
V
O
O
VDR3
ΔV
VBAT = 2.9V, I = 30mA
O
4
I
= 1 to 50mA
O
mV
OLO
ΔV
4
VBAT = 3.3 to 4.5V, I = 1mA
10
60
mV
OLN
ΔV 4/ΔTj
O
Output voltage temperature
coefficient
Ta = -25 to 75°C, I = 30mA
100
ppm/°C
O
O
Ripple rejection
V
4
VBAT = 3.6V, I = 30mA, VRR = -20dBV,
O
55
75
dB
R
f
= 1kHz
RR
= 30mA, 20Hz < f < 20kHz
O
Output noise voltage
DET1
V
4
I
μVrms
ON
Detection voltage
Hysteresis width
VD1
ΔV
H→L
2.45
75
2.5
125
100
2.55
175
V
1
mV
H
Detection voltage temperature
coefficient
ΔVD1/ΔTj
Ta = -25 to 75°C
ppm/°C
VBATDET
Detection voltage
VDB
H→L
3.04
93
3.1
155
1.8
3.16
217
2.2
V
mV
Hysteresis width
ΔVHB
Output pull-up resistance
RPDETB
ΔVDB/ΔTj
1.4
MΩ
Detection voltage temperature
coefficient
Ta = -25 to 75°C
100
ppm/°C
Charge pump
Output voltage 1
Oscillation frequency
Output ripple
VCPO1
CPOSC
VRCP
η
VBAT = 3.2 to 5.9V, Load current 80mA
4.8
0.7
5
1
5.2
1.3
V
MHz
mVp-p
%
VBAT = 3.6, Load current 80mA
VBAT = 3.2, Load current 80mA
200
72
Efficiency
LED driver
LEDR output voltage
LEDG output voltage
LEDB output voltage
LEDF output voltage
LEDR OFF leak
LEDG OFF leak
LEDB OFF leak
LEDF OFF leak
Mic bias
VLR
VLG
VLB
VLF
ILR
I
I
I
I
= 40mA
= 40mA
= 40mA
= 40mA
0
0
0
0
0.1
0.1
0.1
0.15
0
0.2
0.2
0.2
0.3
1
V
V
O
O
O
O
V
V
μA
μA
μA
μA
ILG
ILB
0
1
0
1
ILF
0
1
Output ON resistance
OFF leakage current
Output voltage (GP_0, 1)
Output H level
RMO
ILM
I
= 10mA
10
0
Ω
O
1
μA
V
I
I
= 1mA
= 1mA
REG10
-0.3
0
REG10
0.3
V
V
OH
O
O
Output L level
V
OL
Continued on next page.
No.8931-3/6
LV5106FN
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Input voltage 1 (SDATA, SEN, SCLK)
H level
V
1
1
Input H level
Input L level
REG10
×0.8
0
REG10
V
V
INH
L level
V
REG10
INL
×0.2
Input voltage 2 (T_CNT, TCXOCNT, ECO, REG3CTL, REG12CTL, PWRON, RTCINT, MSSELO, MSSELOC, KEYSENSE4, HWRESET)
H level
V
2
Input H level
REG40
×0.8
0
REG40
V
V
INH
L level
V
2
Input L level
REG40
INL
×0.2
Input voltage 3 (RESOUT_N)
H level
V
3
Input H level
Input L level
REG40
×0.8
0
REG40
V
V
INH
L level
V
3
REG40
INL
×0.2
Input voltage 4 (CHG_G)
H level
V
4
4
Input H level
Input L level
REG40
×0.8
0
6
V
V
INH
L level
V
REG40
INL
×0.2
Input voltage 5 (Vcharge)
H level
V
5
Input H level
Input L level
4.4
0
6
V
V
INH
L level
V
5
3.6
INL
Input voltage 6 (VBATBK)
H level
V
6
6
Input H level
Input L level
REG40
×0.8
0
VBAT
V
V
INH
L level
V
REG40
INL
×0.2
Serial bus :
Serial transfer timing
Cycle time
tcy1
ts0
SCLK clock cycle
300
150
150
150
150
150
150
1
ns
ns
ns
ns
ns
ns
ns
μs
Data setup time 1
Data setup time 2
Data hold time 1
Data hold time 2
Pulse width 1
SDEN setup time for rise of SCLK
SDATA setup time for rise of SCLK
SDEN hold time for fall of SCLK
SDATA hold time for rise of SCLK
SCLK L-period pulse width
SCLK H-period pulse width
SDEN L-period pulse width
ts1
th0
th1
tw1L
tw1H
tw2L
Pulse width 2
Pulse width 3
Package Dimensions
unit : mm (typ)
3272
Top View
Bottom View
7.2
7.0
0.4
0.3
36
25
24
13
37
48
5.0
1
12
4 - Do Not Connect
(0.75)
0.5
0.2
Side View
SANYO : VQFN48(7X7)
No.8931-4/6
LV5106FN
Serial transfer timing conditions
50%
SDEN
th0
ts0
tw2L
SCLK
50%
tw1L
tw1H
th1
ts1
tcy1
A7 A6 A5 A4 A3 A2 A1 A0 D15 D14 D13
D3 D2 D1 D0
A7
SDATA
Address
Data
Data length
: 24bit
Clock frequency
: 3MHz or les
"SDATA" is taken in at fall of "SDEN" when "SCLK" of 24 clock is entered during H period of "SDEN."
(Note) "SDATA" is not taken in when "SCLK" is 23 clock or less during H period of "SDEN."
When "SCLOCK" exceeds 25 clock, "SDATA" is taken in at the 24th clock, and subsequent "SDATA" is
ignored.
Block Diagram
36 35 34 33 32 31 30 29 28 27 26 25
1MΩ
PWRON
RTCINT
RREF
RESETL
CD
0.1μF
TCXOCNT
37
38
39
40
41
42
43
44
45
46
47
48
24
23
22
21
20
19
18
17
16
15
14
13
Seril
REG
3
REG
4
REG
1
REG
2
REG12CTL
REG3CTL
REG12CTL
0.1μF
P_CNT
BG
REG12CTL
VBAT
VBAT
DET1
0.1μF
T_CNT
GNDR
1.8MΩ
VBATDET
XXμF
TEST2
TT
BGR
MSSELO
VBATBK
CHG_G
XXμF
MSSELOC
XXμF
KEYSENSE4
GP_1
GP_0
OSC
Counter
RESOUT_N
HWRESET
VCHARGE
CHARGE
PUMP
SCLK
SEN
Serial
CTL
1
2
3
4
5
6
7
8
9
10 11 12
0.22μF
4.7μF
1μF
Top view
No.8931-5/6
LV5106FN
Power Control Block Diagram
REG4O
PWRON
P_CNT
1000kΩ
REG4O
REG4O
MSSELO
RTCINT
1000kΩ
REG4O
MSSELOC
T_CNT
REG4O
REG4O
10kΩ
REG4O
REG4O
10kΩ
REG4O
REG4O
KEYSENSE4
RESOUT_N
2000kΩ
REG4O
REG4O
HWRESET
VCHARGE
CHG(G)
100kΩ
REG4O REG4O
2kΩ 120kΩ
10kΩ
100kΩ
REG4O
REG4O
REG4O
VBATBK
VBAT
1000kΩ
REG4O
TT
TCXOCNT
1000kΩ
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of June, 2007. Specifications and information herein are subject
to change without notice.
PS No.8931-6/6
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